Abstract: A process chamber 1 for PECVD (Plasma Enhanced Chemical Vapor Deposition) coating of a substrate includes an electrode, which is integrated in a contact frame, which is firmly connected to the recipient. A movable carrier in the process chamber carries at least one substrate. The carrier is transported by means of a driven roller positioner into the process chamber or out of the process chamber along a transport route defined by the movement. As soon as the carrier inside the recipient has reached a certain position, the lower roller positioner is uncoupled from carrier by lowering by means of a lifting device. In this regard, the carrier detaches itself from the upper roller positioner. Then, the carrier is accepted by a transfer device (not shown) and brought from the transport position laterally into a treatment position in contact with the contact frame. In this way, reliable contact is produced between the electrode and a counter-electrode provided in carrier.

Abstract: Tools and methods for in-situ characterizing of a surface of a polishing pad are described. A characterization tool is integrated with polishing tool so that the polishing pad can be monitored in-situ. The characterization tool and the polishing pad can be rotated or moved so that any portion of the polishing pad can be tested.

Abstract: Methods and apparatus for correcting defects, such as rounded corners and line end shortening, in patterns formed via lithography are provided. Such defects are compensated for “post-rasterization” by manipulating the grayscale values of pixel maps.

Abstract: In a first aspect, a first method is provided repositioning support provided by an end effector. The first method includes the steps of (1) employing the end effector to support a substrate carrier by a bottom of the substrate carrier; (2) transferring the substrate carrier from the end effector to an intermediate support location, wherein the intermediate support location supports the substrate carrier by a bottom of the substrate carrier; (3) repositioning the end effector proximate an overhead transfer flange of the substrate carrier; (4) employing the end effector to support the substrate carrier by the overhead transfer flange of the substrate carrier; and (5) transferring the substrate carrier from the intermediate support location. Numerous other aspects are provided.

Abstract: A method for determining a polishing endpoint includes obtaining spectra from different zones on a substrate during different times in a polishing sequence, matching the spectra with indexes in a library and using the indexes to determining a polishing rate for each of the different zones from the indexes. An adjusted polishing rate can be determined for one of the zones, which causes the substrate to have a desired profile when the polishing end time is reached.

Abstract: Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of the processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.

Abstract: A system for performing PVD of metallic nitride(s) is disclosed. The improved performance is provided by a method of increasing the partial pressures of nitrogen or other active gases near the wafer surface through initial introduction of the argon or other neutral gases alone into an ionized metal plasma PVD chamber through an upper gas inlet at or near the target, initiating the plasma in the presence of argon or other neutral gases alone, after which nitrogen or other active gases are introduced into the chamber through a lower gas inlet at or near the wafer surface to increase deposition rates and lower electrical resistivity of the deposited metallic layer. An apparatus for carrying out the invention includes a source of argon near the target surface and a source of nitrogen integral to the substrate support thereby delivering nitrogen near the substrate surface.

Abstract: In a first aspect, a programmable transfer device is provided for transferring conductive pieces to electrode pads of a target substrate. The programmable transfer device includes (1) a transfer substrate; and (2) a plurality of individually addressable electrodes formed on the transfer substrate. Each electrode is adapted to selectively attract and hold a conductive piece during transfer of the conductive piece to an electrode pad of a target substrate. Numerous other aspects are provided.

Abstract: A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.

Abstract: A non-axisymmetric electromagnet coil used in plasma processing in which at least one electromagnet coil is not symmetric with the central axis of the plasma processing chamber with which it is used but is symmetric with an axis offset from the central axis. When placed radially outside of an RF coil, it may reduce the azimuthal asymmetry in the plasma produced by the RF coil. Axisymmetric magnet arrays may include additional axisymmetric electromagnet coils. One axisymmetric coil is advantageously placed radially inside of the non-axisymmetric coil to carry opposed currents. The multiple electromagnet coils may be embedded in a molded encapsulant having a central bore about a central axis providing the axisymmetry of the coils.

Abstract: Methods and apparatus for spectrum-based endpointing. An endpointing method includes selecting two or more reference spectra. Each reference spectrum is a spectrum of white light reflected from a film of interest on a first substrate and has a thickness greater than a target thickness. The reference spectra is selected for particular spectra-based endpoint determination logic so that the target thickness is achieved when endpoint is called by applying the particular spectra-based endpoint logic. The method includes obtaining two or more current spectra. Each current spectrum is a spectrum of white light reflected from a film of interest on a second substrate when the film of interest is being subjected to a polishing step and has a current thickness that is greater than the target thickness. The method includes determining, for the second substrate, when an endpoint of the polishing step has been achieved.

Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer.

Abstract: A method of noble metal layer formation for high aspect ratio interconnect features is described. The noble metal layer is formed using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a noble metal-containing precursor and a reducing gas on a substrate structure. The adsorbed noble metal-containing precursor reacts with the adsorbed reducing gas to form the noble metal layer on the substrate. Suitable noble metals may include, for example, palladium (Pd), platinum (Pt) cobalt (Co), nickel (Ni) and rhodium (Rh).

Abstract: A magnetron sputter source for a sputter-coating installation includes a cathode and a target assigned to the cathode or formed as the cathode. The target provides coating and/or treatment material for the coating and/or treatment of a substrate. Furthermore, the magnetron sputtering source has means for generating a coating plasma and a magnet arrangement for generating a magnetic field for the purpose of influencing the coating plasma such that a plasma channel is generated above a partial section of a surface of the target. The magnet arrangement and the surface of the target are arranged such that they can be moved relative to each other, and the plasma channel is traversable above the surface of the target. The magnetron sputtering source is adjustable such that, when the plasma channel moves over the surface of the target, a duration of exposure of the surface to the plasma is reduced by an increase in a relative velocity (v, v+u) between the magnet arrangement and the target.

Abstract: Described herein is a method of removing an organic-containing material from an exposed surface of a large substrate (at least 0.25 m2). The substrate may comprise an electronic device. The exposed surface is treated with a stripping solution comprising ozone (O3) in a solvent, where the solvent comprises acetic anhydride. The stripping solvent used to form the stripping solution may comprise a mixture of acetic anhydride with a co-solvent selected from the group consisting of a carbonate containing 2-4 carbon atoms, ethylene glycol diacetate, and combinations thereof. In some instances, the stripping solution may contain only acetic anhydride and ozone, where the ozone concentration is typically about 300 ppm or greater.

Abstract: In one embodiment, an apparatus for performing an atomic layer deposition process is provided which includes a chamber body having a substrate support, a lid assembly attached to the chamber body, and delivery sub-assemblies coupled to the lid assembly and configured to deliver process gases into a centralized expanding conduit, which extends through the lid assembly and expands radially outward. The first gas delivery sub-assembly contains an annular mixing channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular mixing channel is adapted to deliver a first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. A first gas inlet may be coupled to the annular mixing channel and positioned to provide the first process gas to the annular mixing channel. The second gas delivery sub-assembly contains a second gas inlet in fluid communication to the centralized expanding conduit.

Abstract: A method and system are presented for use in imaging broadband light. A plurality of substantially narrowband light components of the broadband light are passed through an array of spectral imaging modules. Each of the spectral imaging modules is configured for imaging light of a respective substantially narrow spectral band with minimal aberrations. This technique provides for producing an image with minimal aberrations over the entire spectral range of the broadband light.

Abstract: A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.

Abstract: Embodiments of the invention provide methods for forming a material on a substrate which includes exposing a plurality of substrates within a batch process chamber to a first oxidizing gas during a pretreatment process, exposing the substrates sequentially to a precursor and a second oxidizing gas during an ALD cycle and repeating the ALD cycle to form a material on the substrates. In a preferred example, a hafnium precursor is used during the ALD process to form a hafnium-containing material, such as hafnium oxide. In one example, the first and second oxidizing gases are the same oxidizing gases. In a preferred example, the first and second oxidizing gases are different oxidizing gases, such that the pretreatment process contains ozone and the ALD process contains water vapor.

Abstract: A assembly for a chemical mechanical polishing apparatus includes a carrier head and a polishing liquid delivery ring. The carrier head has a substrate receiving surface and a retaining ring surrounding the substrate receiving surface. The polishing liquid delivery ring is coupled to the carrier head and surrounds the retaining ring. The polishing liquid delivery ring includes a reservoir to hold a liquid and an outlet in fluid communication with the reservoir and positioned to dispense the liquid to a location on a polishing surface outside the retaining ring.