Abstract: An electron beam pattern generator comprises a laser beam generator to generate a laser beam. A photocathode receives the laser beam and generates one or more electron beams. The photocathode comprises cesium halide material, such as for example, cesium bromide or iodide. The cesium halide material may have a decreased workfunction that allows efficient operation at a wavelength of the laser beam of at least about 200 nm. Electron optics are provided to focus the electron beams onto a substrate that is supported on a substrate support.

Abstract: A method of a single wafer wet/dry cleaning apparatus comprising: a transfer chamber having a wafer handler contained therein; a first single wafer wet cleaning chamber directly coupled to the transfer chamber; and a first single wafer ashing chamber directly coupled to the transfer chamber.

Abstract: A substrate processing apparatus has a process chamber and an effluent treatment reactor. The process chamber has a substrate support, a process gas supply, a gas energizer, and an exhaust conduit. The effluent treatment reactor has an effluent inlet to receive effluent from the exhaust conduit of the process chamber, a plasma cell having one or more electrodes electrically connected to a voltage source adapted to electrically bias the electrodes to couple energy to effluent received in the plasma cell, a scrubbing cell coaxially exterior to the plasma cell, the scrubbing cell having a scrubbing fluid inlet to introduce scrubbing fluid into effluent in the scrubbing cell and a scrubbing fluid outlet, and an effluent outlet to release the treated effluent.

Abstract: A method of operating a track lithography tool. The track lithography tool is adapted to process a plurality of substrates according to a recipe, the recipe including a plurality of process steps and a plurality of transfer steps. The method includes determining a process time associated with a time critical process and determining an initial sending rate for the track lithography tool. The method also includes transferring at least one of a plurality of wafers into the track lithography tool at the initial sending rate and monitoring a variation in the process time associated with the time critical process. The method further includes increasing the duration of at least one of the plurality of process steps, wherein the duration of the at least one of the plurality of process steps is increased by an amount equal to the variation in the process time associated with the time critical process.

Abstract: Temperature of a processed workpiece may be regulated by flowing a thermal control fluid from a thermal source to a thermal drain, in a direction substantially normal to the plane occupied by the workpiece. This flow orientation ensures that any resulting temperature gradient in the thermal control fluid is also positioned substantially normal to the substrate, thereby avoiding processing variation in different areas of the workpiece attributable to an in-plane gradient. The thermal control fluid may be flowed from a common source to a plurality of pixel-like regions proximate to the workpiece, in order to ensure uniform temperature control. Use of such pixel-like regions promotes scalability of the temperature control apparatus.

Abstract: A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.

Abstract: Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.

Abstract: A method and apparatus for obtaining in-situ data of a substrate in a semiconductor substrate processing chamber is provided. The apparatus includes an optics assembly for acquiring data regarding a substrate and an actuator assembly adapted to laterally move the optics assembly in two dimensions relative to the substrate.

Abstract: A break-away mounting system for a continuous-motion, high-speed position conveyor system is disclosed. A support cradle may be suspended from a conveyor belt such that the support cradle maintains a fixed position and orientation relative to at least one point on the conveyor belt without inducing appreciable stress on the conveyor belt, the support cradle, or the coupling between the conveyor belt and the support cradle. The mount may include a leading rotatable bearing attached to the support cradle which may releasably engage a first key attached to the conveyor belt, the rotatable bearing adapted to accommodate rotational forces applied to the support cradle by the conveyor belt. The mount may also include a slide bearing attached to the support cradle which may releasably engage a second key attached to the conveyor belt, the slide bearing adapted to accommodate longitudinal forces applied to the support cradle by the conveyor belt.

Abstract: An alignment tool, method and system are provided for aligning a cassette handler to a robot blade in a workpiece handling system, in which the tool comprises a frame or fixture adapted to be supported by the cassette handler support surface, in which the frame has one or more distance sensors positioned to measure the distance of a workpiece or robot blade from the sensor or a predetermined reference point or surface. In a preferred embodiment, the frame emulates a workpiece cassette and the distance sensors provide a numerical output of the distance to the workpiece. As explained in greater detail below, these distance measurements facilitate accurately leveling and aligning the cassette handler support surface relative to a workpiece supported by the robot blade such that when the frame is replaced by an actual workpiece cassette, the workpiece cassette will also be level and aligned with respect to the robot blade and the workpiece held by the blade.

Abstract: Methods deposit a film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. Flows of first precursor deposition gases are provided to the substrate processing chamber. A first high-density plasma is formed from the flows of first deposition gases to deposit a first portion of the film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components until after the gap has closed. A sufficient part of the first portion of the film is etched back to reopen the gap. Flows of second precursor deposition gases are provided to the substrate processing chamber. A second high-density plasma is formed from the flows of second precursor deposition gases to deposit a second portion of the film over the substrate and within the reopened gap with a second deposition process that has simultaneous deposition and sputtering components.

Abstract: An electron-optical arrangement provides a primary beam path for a beam of primary electrons and a secondary beam path for secondary electrons. The electron-optical arrangement includes a magnet arrangement having first, second and third magnetic field regions. The first magnetic field region is traversed by the primary beam path and the secondary beam path. The second magnetic field region is arranged in the primary beam path upstream of the first magnetic field region and is not traversed by the secondary beam path. The first and second magnetic field regions deflect the primary beam path in substantially opposite directions. The third magnetic field region is arranged in the secondary beam path downstream of the first magnetic field region and is not traversed by the first beam path. The first and third magnetic field regions deflect the secondary beam path in a substantially same direction.

Abstract: A chemical mechanical polishing apparatus and method can use an eddy current monitoring system and an optical monitoring system. Signals from the monitoring systems can be combined on an output line and extracted by a computer. The eddy current monitoring system or the optical monitoring system can be used to determine the substrate edge. A focusing optic can be used to improve the accuracy of the optical monitoring system in detecting the edge of the substrate.

Abstract: The carrier head has a base and a substrate backing structure for holding a substrate against a polishing surface during polishing. The substrate backing structure is connected to the base and includes an external surface that contacts a backside of the substrate during polishing. The substrate backing structure also includes a resistive heating system to distribute heat over an area of the external surface and at least one thermally conductive membrane. The external surface is a first surface of the at least one thermally conductive membrane, and the resistive heating system is integrated within one of the at least one thermally conductive membrane.

Abstract: Gas is introduced prior to a flooding process of a vacuum chamber of a vacuum installation, into coverings of elements, which coverings can be ventilated such that solid bodies are blown out of said coverings thereby preventing a penetration of said solid bodies into the coverings.

Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.

Abstract: A method and apparatus for transferring a substrate is provided. In one embodiment, an apparatus for transferring a substrate includes at least one end effector. A disk is rotatably coupled to the end effector. The disk is adapted to rotate the substrate relative to the end effector. The end effector may additionally include a sensor coupled thereto. The sensor is adapted to detect an indicia of orientation of the substrate supported by the end effector. In another embodiment, a method for transferring a substrate includes rotating the substrate disposed on an end effector and detecting an indicia of orientation of the substrate.

Abstract: A method for controlling liquid delivery in a processing chamber. The method includes generating an analog input (AI) signal proportional to a process variable and calculating an analog output (AO) signal based on a setpoint and a deadband. The setpoint is a target value of the process variable and the deadband is an allowable tolerance around the setpoint that determines when the control logic is activated to control the process variable. The method further includes transmitting the AO signal to a control device and adjusting the process variable proportional to the value of the AO signal.

Abstract: The invention relates to a drive mechanism for a vacuum treatment apparatus by which substrate holders can be transported around an axis (A—A) from an entrance airlock to an exit airlock. A stationary supporting column (1) is disposed in the center and on it a rotatory drive chamber (6) is borne which has control rods (9) for a rotation and a radial displacement of the substrate holders. In the rotatory drive chamber (6), a motor (4) and rotatory displacement drives for the control rods (9) are arranged on the supporting column (1), the control rods being in active connection each with a corresponding substrate holder.

Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.