Patents Assigned to Applied Material
  • Patent number: 7087536
    Abstract: A silicon oxide film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A liquid Si—C—O—H precursor is vaporized. A flow of the vaporized liquid Si—C—O—H precursor is provided to the substrate processing chamber. A gaseous oxidizer is also flowed to the substrate processing chamber. A deposition plasma is generated inductively from the precursor and the oxidizer in the substrate processing chamber, and the silicon oxide film is deposited over the substrate and within the gap with the deposition plasma.
    Type: Grant
    Filed: September 1, 2004
    Date of Patent: August 8, 2006
    Assignee: Applied Materials
    Inventors: Srinivas D. Nemani, Young S. Lee
  • Patent number: 7086933
    Abstract: A method and apparatus for delivering a polishing fluid to a chemical mechanical polishing surface is provided. In one embodiment, an apparatus for delivering a polishing fluid to a chemical mechanical polishing surface includes an arm having a plurality of holes formed in the arm for retaining a plurality of polishing fluid delivery tubes. Each of the tubes are disposed through one of the holes and coupled to the arm. The number of holes exceeds the number of tubes, thereby allowing the distribution of polishing fluid to a polishing surface and correspondingly the local polishing rates across a diameter of a substrate being polished to be controlled.
    Type: Grant
    Filed: April 22, 2002
    Date of Patent: August 8, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Lidia Vereen, Peter N. Skarpelos, Brian J. Downum, Patrick Williams, Terry Kin-Ting Ko, Christopher Heung-Gyun Lee, Kenneth Reese Reynolds, John Hearne, Daniel Hachnochi
  • Patent number: 7087179
    Abstract: In one aspect, the invention provides methods and apparatus for forming optical devices on large area substrates. The large area substrates are preferably made of quartz, silica or fused silica. The large area substrates enable larger optical devices to be formed on a single die. In another aspect, the invention provides methods and apparatus for forming integrated optical devices on large area substrates, such as quartz, silica or fused silica substrates. In another aspect, the invention provides methods and apparatus for forming optical devices using damascene techniques on large area substrates or silicon substrates. In another aspect, methods for forming optical devices by bonding an upper cladding layer on a lower cladding and a core is provided.
    Type: Grant
    Filed: December 11, 2000
    Date of Patent: August 8, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Cecilia Y. Mak, John M. White, Kam S. Law, Dan Maydan
  • Patent number: 7087497
    Abstract: A low-thermal-budget gapfill process is provided for filling a gap formed between two adjacent raised features on a strained-silicon substrate as part of a shallow-trench-isolation process. An electrically insulating liner is deposited using atomic-layer deposition and polysilicon is deposited over the electrically insulating liner, with both stages being conducted at temperatures below 700° C.
    Type: Grant
    Filed: March 4, 2004
    Date of Patent: August 8, 2006
    Assignee: Applied Materials
    Inventors: Zheng Yuan, Reza Arghavani, Ellie Y Yieh, Shankar Venkataraman
  • Patent number: 7086638
    Abstract: In one embodiment, a slit valve is provided that is adapted to seal an opening and that includes a valve housing having a first wall, a first opening formed in the first wall, a second wall and a second opening formed in the second wall. The slit valve also includes a closure member having a sealing portion adapted to contact the second wall and seal the second opening, and a bracing member moveable relative to the sealing portion and adapted to contact the first wall. The slit valve further includes at least one actuating mechanism adapted to (1) move the sealing portion toward the second wall and into contact with the second wall; and (2) move the bracing member away from the sealing portion and into contact with the first wall so as to brace the sealing portion against the second wall. Numerous other aspects are provided.
    Type: Grant
    Filed: May 12, 2004
    Date of Patent: August 8, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Shinichi Kurita, Ke Ling Lee, Wendell T Blonigan
  • Patent number: 7087144
    Abstract: A contact assembly for supporting a substrate in an electrochemical plating system, wherein that contact assembly includes a contact ring and a thrust plate assembly. The contact ring includes an annular ring member having an upper surface and a lower surface, an annular bump member positioned on the upper surface, and a plurality of flexible and conductive substrate contact fingers extending radially inward from the lower surface. The thrust plate includes an annular plate member sized to be received within the annular ring member, and a seal member extending radially outward from the plate member, the seal member being configured to engage the annular bump member for form a fluid seal therewith.
    Type: Grant
    Filed: January 31, 2003
    Date of Patent: August 8, 2006
    Assignee: Applied Materials, Inc.
    Inventor: Harald Herchen
  • Patent number: 7087913
    Abstract: Provided is an ion implanter having a deceleration lens assembly comprising a plurality of electrodes in which one or more of the apertures of the deceleration electrodes are shaped in a manner which can improve performance of the ion implanter. In one embodiment, an electrode aperture is generally elliptical in shape and conforms generally to the shape of the beam passing through the aperture. In another aspect, an axis segment extends 40% of the length of the aperture from the aperture center to an intermediate point at the end of the segment. The average width of the aperture measured at each point from the center to the intermediate point is substantially less than the maximum width of the aperture.
    Type: Grant
    Filed: October 29, 2003
    Date of Patent: August 8, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Richard David Goldberg, David George Armour, Christopher Burgess, Adrian J. Murrell
  • Patent number: 7089134
    Abstract: One embodiment of the present invention is a method for analyzing gas flow in a gas transmission unit of a gas panel that includes: (a) monitoring a measure of gas flow output from a mass flow controller included in the gas transmission unit; (b) monitoring a measure of gas pressure output from a pressure regulator included in the gas transmission unit; and (c) analyzing the measure of gas flow and the measure of gas pressure to determine whether gas flow is stable in the gas transmission unit.
    Type: Grant
    Filed: January 17, 2003
    Date of Patent: August 8, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Philip R. Barros, Raul A. Martin, Russell T. Norman, Chris Melcer
  • Patent number: 7086929
    Abstract: A chemical mechanical polishing apparatus includes two optical systems which are used serially to determine polishing endpoints. The first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. The second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.
    Type: Grant
    Filed: July 8, 2003
    Date of Patent: August 8, 2006
    Assignee: Applied Materials
    Inventors: Andreas Norbert Wiswesser, Walter Schoenleber
  • Publication number: 20060171653
    Abstract: According to one embodiment of the invention, a method of modifying a mechanical, physical and/or electrical property of a dielectric layer comprises exposing the dielectric layer to a first dose of electron beam radiation at a first energy level; and thereafter, exposing the dielectric layer to a second dose of electron beam radiation at a second energy level that is different from the first energy level.
    Type: Application
    Filed: February 1, 2005
    Publication date: August 3, 2006
    Applicant: Applied Materials, Inc.
    Inventors: Alexandros Demos, Li-Qun Xia, Tzu-Fang Huang, Wen Zhu
  • Patent number: 7085616
    Abstract: A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
    Type: Grant
    Filed: July 27, 2001
    Date of Patent: August 1, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Barry L. Chin, Alfred W. Mak, Lawrence Chung-Lai Lei, Ming Xi, Hua Chung, Ken Kaung Lai, Jeong Soo Byun
  • Patent number: 7083702
    Abstract: An apparatus for providing a return current path for RF current between a chamber wall and a substrate support is provided comprising a low impedance flexible curtain having a first end and a second end, the first end adapted to be electrically connected to the chamber wall and the second end adapted to be connected to the substrate support, wherein the curtain further comprises at least one fold in the curtain material, located an axial distance between the first end and the second end, and at least one perforation cut into the curtain proximate the second end.
    Type: Grant
    Filed: June 12, 2003
    Date of Patent: August 1, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Wendell Blonigan, Ernst Keller, Carl Sorensen
  • Patent number: 7085622
    Abstract: Generally a method and apparatus for viewing images within a processing system is provided. In one embodiment, an apparatus includes a plate having a camera, transmitter and battery coupled thereto. The plate is adapted to be transported about a semiconductor processing system by a substrate transfer robot thereby allowing images within the system to be viewed remotely from the system. The viewed images may be used for system inspection and calibration of robot position, among other uses.
    Type: Grant
    Filed: April 19, 2002
    Date of Patent: August 1, 2006
    Assignee: Applied Material, Inc.
    Inventors: Iraj Sadighi, Jeff Hudgens, Michael Rice, Gary Wyka
  • Patent number: 7084064
    Abstract: A method and apparatus for electrochemically processing metal and barrier materials is provided. In one embodiment, a method for electrochemically processing a substrate includes the steps of establishing an electrically-conductive path through an electrolyte between an exposed layer of barrier material on the substrate and an electrode, pressing the substrate against a processing pad assembly with a force less than about 2 psi, providing motion between the substrate and pad assembly in contact therewith and electrochemically removing a portion of the exposed layer during a first electrochemical processing step in a barrier processing station.
    Type: Grant
    Filed: September 14, 2004
    Date of Patent: August 1, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Feng Q. Liu, Liang-Yuh Chen, Stan D. Tsai, Yongqi Hu
  • Publication number: 20060166515
    Abstract: A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.
    Type: Application
    Filed: March 24, 2006
    Publication date: July 27, 2006
    Applicant: Applied Materials, Inc.
    Inventors: M. Karim, DongQing Li, Jeong Byun, Thanh Pham
  • Publication number: 20060167583
    Abstract: A method and apparatus for positioning a substrate in a substrate processing chamber. The method includes placing the substrate on a substrate transfer blade, moving the substrate transfer blade to a first position located in a transfer chamber, and capturing at least one image that includes at least a portion of the substrate transfer blade and at least a portion of the substrate. The method also includes processing the image to determine a position of a predetermined portion of the substrate transfer blade and a position of predetermined portion of the substrate. The method further includes determining an offset between the position of the predetermined portion of the substrate transfer blade and the position of the predetermined portion of the substrate, and moving the substrate transfer blade to a second position located in the substrate processing chamber, wherein the second position is adjusted to account for the offset.
    Type: Application
    Filed: January 22, 2005
    Publication date: July 27, 2006
    Applicant: Applied Materials, Inc.
    Inventor: Satish Sundar
  • Patent number: 7081042
    Abstract: Techniques for removing a substrate from a polishing pad are described. A substrate is pulled away from the polishing pad such that the edges of the substrate are pulled away from the polishing pad before the center of the substrate is pulled from the polishing pad.
    Type: Grant
    Filed: December 2, 2004
    Date of Patent: July 25, 2006
    Assignee: Applied Materials
    Inventors: Hung Chih Chen, Steven M. Zuniga, Tsz-Sin Siu
  • Patent number: 7081414
    Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.
    Type: Grant
    Filed: May 23, 2003
    Date of Patent: July 25, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh N Pham, Farhad K Moghadam, Zhuang Li, Padmanabhan Krishnaraj
  • Patent number: 7080528
    Abstract: Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.
    Type: Grant
    Filed: October 23, 2002
    Date of Patent: July 25, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Hichem M'Saad, Anchuan Wang, Sang Ahn
  • Patent number: 7082345
    Abstract: The invention relates to a method, system and computer program useful for producing a product, such as a microelectronic device, for example in an assembly line, where the production facility includes parallel production of assembly lines of products on identically configured chambers, tools and/or modules. Control is provided between such chambers. Behaviors of a batch of wafers (or of each wafer) are collected as the first batch (or each wafer) is processed by one of the identically configured chambers in one assembly line to produce the microelectronic device. The information relating to the behavior is shared with a controller of another one (or more) of the identically configured chambers, process tools and/or modules, to provide an adjustment of the process tool and thereby to produce a second batch (or next wafer) which is substantially identical, within tolerance, to the first batch (or wafer).
    Type: Grant
    Filed: June 18, 2002
    Date of Patent: July 25, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Arulkumar P. Shanmugasundram, Helen Armer, Alexander T. Schwarm