Abstract: A method for void free filling with in-situ doped amorphous silicon of a deep trench structure is provided in which a first fill is carried out in at a temperature, pressure and dopant to silane ratio such that film deposition occurs from the bottom of the trench upwards. By way of this first fill, step coverages well in excess 100% are achieved. In the second fill step, deposition is carried out under changed conditions so as to reduce the impact of dopant on deposition rate, whereby trench fill is completed at a deposition rate which exceeds the deposition rate of the first fill. In an application of this method to the formation of deep trench capacitor structures, the intermediate steps further including the capping of the void free filled trench with a thick layer of amorphous silicon, planarization of the wafer thereafter, followed by a thermal anneal to re-distribute the dopant within the filled trench. Thereafter, additional steps can be performed to complete the formation of the capacitor structure.
Abstract: An amplifier circuit having an amplifier chain comprising an input port and output port with a plurality of interconnected gain stages positioned in between. The output of one interconnected gain stage provides an input to the next stage within the amplifier chain. The output port coupled to the plurality of interconnected gain stages such that the amplifier circuit output is generated from any one or more of the interconnected gain stages.
Abstract: A method of forming semiconductor junctions in a semiconductor material of a workpiece includes ion implanting dopant impurities in selected regions of the semiconductor material, introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and optically annealing the workpiece so as to activate dopant impurities in the semiconductor material.
Type:
Grant
Filed:
May 17, 2005
Date of Patent:
September 19, 2006
Assignee:
Applied Materials, Inc.
Inventors:
Kartik Ramaswamy, Hiroji Hanawa, Biagio Gallo, Kenneth S. Collins, Kai Ma, Vijay Parihar, Dean Jennings, Abhilash J. Mayur, Amir Al-Bayati, Andrew Nguyen
Abstract: A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then laser annealing the substrate is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs electromagnetic radiation emitted by the laser and anneals a top surface layer of the substrate.
Type:
Grant
Filed:
October 3, 2003
Date of Patent:
September 19, 2006
Assignee:
Applied Materials, Inc.
Inventors:
Luc Van Autryve, Chris D. Bencher, Dean Jennings, Haifan Liang, Abhilash J. Mayur, Mark Yam, Wendy H. Yeh, Richard A. Brough
Abstract: A method of annealing a metal layer on a substrate in a chamber is provided. The method comprises positioning a substrate with a metal layer thereon in a chamber, removing atmospheric gases from the chamber, providing process gas to the chamber, and annealing the metal layer at a temperature greater than about 80 degrees Celsius. Also provided is a method of forming a feature on a substrate. The method comprises depositing a dielectric layer on the substrate, forming at least one opening within the dielectric layer, depositing a metal layer in the opening, positioning the substrate in an annealing chamber, removing atmospheric gases from the annealing chamber, providing process gas to the annealing chamber, and annealing the metal layer at temperature greater than about 80 degrees Celsius.
Abstract: A method and system for generating flashes on a substrate. The method includes receiving one or more figures of a pattern to be printed on the substrate and decomposing each figure into at least four substantially rectangular shapes. The four substantially rectangular shapes are separated by at least one horizontal boundary and at least one vertical boundary. The method further includes generating a flash for each substantially rectangular shape such that each edge of each figure is an image of the same aperture.
Abstract: A method is described for decreasing the critical dimensions of integrated circuit features in which a first masking layer (101) is deposited, patterned and opened in the manner of typical feature etching, and a second masking layer (201) is deposited thereon prior to etching the underlying insulator. The second masking layer is advantageously coated in a substantially conformal manner. Opening the second masking layer while leaving material of the second layer on the sidewalls of the first masking layer as spacers leads to reduction of the feature critical dimension in the underlying insulator. Ashable masking materials, including amorphous carbon and organic materials are removable without CMP, thereby reducing costs. Favorable results are also obtained utilizing more than one masking layer (101, 301) underlying the topmost masking layer (302) from which the spacers are formed. Embodiments are also described in which slope etching replaces the addition of a separate spacer layer.
Type:
Grant
Filed:
May 22, 2002
Date of Patent:
September 12, 2006
Assignee:
Applied Materials, Inc.
Inventors:
Hongching Shan, Kenny L. Doan, Jingbao Liu, Michael S. Barnes, Hong D. Nguyen, Christopher Dennis Bencher, Christopher S. Ngai, Wendy H. Yeh, Eda Tuncel, Claes H. Bjorkman
Abstract: A system and method for distributing gas to a substrate in a dry etch chamber make use of different flow channels to distribute the gas to different portions of a substrate. A first flow channel can be oriented to distribute gas to an inner portion of the substrate. A second flow channel can be oriented to distribute gas to an outer portion of the substrate. With different flow channels, the system and method enable separate control of gas distribution for different portions of the substrate. In particular, the flow channels allow separate control of gas flow rate, concentration, and flow time for different areas of the substrate. In this manner, gas distribution can be selectively controlled to compensate for different etch rates across the substrate surface. Also, gas distribution can be controlled as a function of etch rate patterns exhibited by different etch gasses used in successive process steps.
Abstract: A method of patterning a layer of magnetic material to form isolated magnetic regions. The method forms a mask on a film stack comprising a layer of magnetic material such that the protected and unprotected regions are defined. The unprotected regions are etched in a high temperature environment to form isolated magnetic regions.
Type:
Grant
Filed:
January 6, 2003
Date of Patent:
September 12, 2006
Assignee:
Applied Materials, Inc.
Inventors:
Xiaoyi Chen, Chentsau Ying, Padmapani C. Nallan, Ajay Kumar
Abstract: The invention generally provides methods and compositions for planarizing a substrate surface having underlying dielectric materials. Aspects of the invention provide compositions and methods using a combination of low polishing pressures, polishing compositions, various polishing speeds, selective polishing pads, and selective polishing temperatures, for removing barrier materials by a chemical mechanical polishing technique with minimal residues and minimal seam damage. Aspects of the invention are achieved by employing a strategic multi-step process including sequential CMP at low polishing pressure to remove the deposited barrier materials.
Abstract: An end station for an ion implanter has a vacuum chamber which receives an ion beam. A wafer holder is mounted at the distal end of a scanning arm which has its proximal end attached to the chamber wall. The scanning arm has at least two rotary joints providing articulation of the arm to permit movement of the wafer holder in two orthogonal scan directions in a scan plane transverse to the beam path through the vacuum chamber. A scanning arm driver moves the substrate holder in the scan plane in a desired two-dimensional scan pattern relative to the beam path.
Type:
Grant
Filed:
June 20, 2003
Date of Patent:
September 12, 2006
Assignee:
Applied Materials, Inc.
Inventors:
Richard Naylor-Smith, Simon Frederick Dillon, Richard Cooke
Abstract: A robotic positioning system that cooperates with a sensing system to correct robot motion is provided. The sensing system is decoupled from the sensors used conventionally to control the robot's motion, thereby providing repeatable detection of the robot's true position. In one embodiment, the positioning system includes a robot, a controller, a motor sensor and a decoupled sensor. The robot has at least one motor for manipulating a linkage controlling the displacement of a substrate support coupled thereto. The motor sensor is provides the controller with motor actuation information utilized to move the substrate support. The decoupled sensor provides information indicative of the true position the substrate support that may be utilized to correct the robot's motion.
Type:
Grant
Filed:
October 29, 2003
Date of Patent:
September 12, 2006
Assignee:
Applied Materials, Inc.
Inventors:
Pyongwon Yim, Satish Sundar, Vinay Shah, Mario David Silvetti, Douglas Kitajima, Venkatesh Babu, Visweswaren Sivaramakrishnan, Indrajit Lahiri, Surinder Bedi
Abstract: Provided herein is a substrate processing system, which comprises a cassette load station; a load lock chamber; a centrally located transfer chamber; and one or more process chambers located about the periphery of the transfer chamber. The load lock chamber comprises double dual slot load locks constructed at same location. Such system may be used for processing substrates for semiconductor manufacturing.
Abstract: A method for calibrating operational parameters of a charged particle beam device comprises generating a plurality of distinct spots on a specimen, each spot being generated in response to adjusted operational parameters of the charged particle beam device, and registering said respective operational parameters.
Abstract: Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an organosilicon compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen.
Type:
Grant
Filed:
July 11, 2002
Date of Patent:
September 12, 2006
Assignee:
Applied Materials
Inventors:
Bok Hoen Kim, Sudha Rathi, Sang H. Ahn, Christopher D. Bencher, Yuxiang May Wang, Hichem M'Saad, Mario D. Silvetti
Abstract: A chemical mechanical polishing apparatus has a rotatable platen, a polishing sheet that is wider than the substrate extending between two reels, a drive mechanism to advance the polishing sheet, and a chucking mechanism to intermittently secure the polishing sheet to the platen. The platen can have a platen base that is adaptable to receive either a circular platen top or a rectangular platen top.
Type:
Grant
Filed:
May 3, 2004
Date of Patent:
September 12, 2006
Assignee:
Applied Materials, Inc.
Inventors:
Manoocher Birang, Sandra L. Rosenberg, legal representative, Sasson Somekh, John M White, Lawrence M. Rosenberg, deceased
Abstract: An alignment device is provided that includes (1) a first pusher adapted to contact an edge of a substrate supported on a stage and to laterally translate along a first path; (2) a second pusher adapted to contact the substrate edge and to laterally translate along a second path that is at an angle to and intersects the first path; (3) a frame, to which the first and second pushers are movably coupled, adapted to maintain the first and second pushers at an elevation of the substrate edge; (4) a first biasing element coupled between the first pusher and the frame and adapted to bias the first pusher against the substrate edge; and (5) a second biasing element coupled between the second pusher and the frame and adapted to bias the second pusher against the substrate edge independent of the biasing of the first pusher. Other aspects are provided.
Abstract: A process for treating a copper or copper alloy substrate surface with a composition and corrosion inhibitor solution to minimize defect formation and surface corrosion, the method including applying a composition including one or more chelating agents, a pH adjusting agent to produce a pH between about 3 and about 11, and deionized water, and then applying a corrosion inhibitor solution. The composition may further comprise a reducing agent and/or corrosion inhibitor. The method may further comprise applying the corrosion inhibitor solution prior to treating the substrate surface with the composition.
Type:
Grant
Filed:
November 29, 2000
Date of Patent:
September 12, 2006
Assignee:
Applied Materials Inc.
Inventors:
Ramin Emami, Shijian Li, Sen-Hou Ko, Fred C. Redeker, Madhavi Chandrachood
Abstract: Method and apparatus for abating F2 from by-products generated during cleaning of a processing chamber. F2 abatement is efficiently performed by directly injecting H2 in line with a foreline exiting the processing chamber. A tube which is highly resistant to oxidation and corrosive gases, even at high temperature, is connected in line with the foreline as part of the exhaust line of the processing chamber. A cooling jacket may be provided for cooling the tube, since the reaction between F2 and H2 is exothermic. A pressure monitoring arrangement may also be employed to insure that pressure within a hydrogen line, that feeds the injection of H2 into the tube, does not exceed a predetermined pressure value.
Type:
Application
Filed:
April 21, 2006
Publication date:
September 7, 2006
Applicant:
Applied Materials, Inc.
Inventors:
Himanshu Pokharna, Phong Le, Srinivas Nemani
Abstract: Techniques of the present invention are directed to distribution of deposition gases onto a substrate. In one embodiment, a gas distributor for use in a processing chamber is provided. The gas distributor includes a body having a gas deflecting surface and a gas distributor face. The gas deflecting surface defines a cleaning gas pathway. The gas distributor face is disposed on an opposite side of the body from the gas deflecting surface and faces toward a substrate support member. The gas distributor face includes a raised step and at least one set of apertures through the raised step. The at least one set of apertures are adapted to distribute a deposition gas over a substrate positioned on the substrate support member.
Type:
Application
Filed:
March 7, 2005
Publication date:
September 7, 2006
Applicant:
Applied Materials, Inc.
Inventors:
Lawrence Lei, Siqing Lu, Steven Gianoulakis, Won Bang, David Sun, Yen-Kun Victor Wang