Patents Assigned to Applied Materials
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Patent number: 11487139Abstract: Embodiments of metasurfaces having nanostructures with desired geometric profiles and configurations are provided in the present disclosure. In one embodiment, a metasurface includes a nanostructure formed on a substrate, wherein the nanostructure is cuboidal or cylindrical in shape. In another embodiment, a metasurface includes a plurality of nanostructures on a substrate, wherein each of the nanostructures has a gap greater than 35 nm spaced apart from each other. In yet another embodiment, a metasurface includes a plurality of nanostructures on a substrate, wherein the nanostructures are fabricated from at least one of TiO2, silicon nitride, or amorphous silicon, or GaN or aluminum zinc oxide or any material with refractive index greater than 1.8, and absorption coefficient smaller than 0.001, the substrate is transparent with absorption coefficient smaller than 0.001.Type: GrantFiled: October 14, 2019Date of Patent: November 1, 2022Assignee: Applied Materials, Inc.Inventors: Tapashree Roy, Wayne McMillan, Rutger Meyer Timmerman Thijssen
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Patent number: 11487848Abstract: The subject matter of this specification can be implemented in, among other things, a method, system, and/or device to receive current metrology data for an operation on a current sample in a fabrication process. The metrology data includes a current value for a parameter at each of one or more locations on the current sample. The method includes obtaining a reference rate of change of the parameter value of the parameter for each of the one or more locations. The method further includes determining a current rate of change of the parameter value for each of the one or more locations. The current rate of change is associated with the current sample. The method further includes comparing the current rate of change of the parameter value to the reference rate of change of the parameter value and identifying an instance of abnormality of the fabrication process based on the comparison.Type: GrantFiled: January 29, 2021Date of Patent: November 1, 2022Assignee: Applied Materials, Inc.Inventors: Selim Nahas, Joseph James Dox, Vishali Ragam, Eric J. Warren, Shijing Wang, Charles Largo, Christopher Reeves, Randy Raynaldo Corral
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Publication number: 20220344275Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.Type: ApplicationFiled: July 6, 2022Publication date: October 27, 2022Applicant: Applied Materials, Inc.Inventors: Wenjing Xu, Feng Chen, Tae Hong Ha, Xianmin Tang, Lu Chen, Zhiyuan Wu
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Publication number: 20220344172Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of ruthenium, and the contacting may produce ruthenium tetroxide. The methods may include vaporizing the ruthenium tetroxide from a surface of the exposed region of ruthenium. An amount of oxidized ruthenium may remain. The methods may include contacting the oxidized ruthenium with a hydrogen-containing precursor. The methods may include removing the oxidized ruthenium.Type: ApplicationFiled: April 26, 2021Publication date: October 27, 2022Applicant: Applied Materials, Inc.Inventors: Baiwei Wang, Xiaolin C. Chen, Rohan Puligoru Reddy, Oliver Jan, Zhenjiang Cui, Anchuan Wang
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Publication number: 20220344134Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, a process kit for a substrate support includes: an upper edge ring made of quartz and having an upper surface and a lower surface, wherein the upper surface is substantially planar and the lower surface includes a stepped lower surface to define a radially outermost portion and a radially innermost portion of the upper edge ring.Type: ApplicationFiled: July 11, 2022Publication date: October 27, 2022Applicant: Applied Materials, Inc.Inventors: Muhannad MUSTAFA, Muhammad M. RASHEED, Yu LEI, Avgerinos V. GELATOS, Vikash BANTHIA, Victor H. CALDERON, Shi Wei TOH, Yung-Hsin LEE, Anindita SEN
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Publication number: 20220341034Abstract: Exemplary deposition methods may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the boron-containing precursor. The dopant-containing precursor may include a metal. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a doped-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The doped-boron material may include greater than or about 80 at. % of boron in the doped-boron material.Type: ApplicationFiled: April 26, 2021Publication date: October 27, 2022Applicant: Applied Materials, Inc.Inventors: Aykut Aydin, Rui Cheng, Karthik Janakiraman
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Publication number: 20220344171Abstract: Embodiments herein are directed to localized stress modulation by implanting a first side of a substrate to reduce in-plane distortion along a second side of the substrate. In some embodiments, a method may include providing a substrate, the substrate comprising a first main side opposite a second main side, wherein a plurality of features are disposed on the first main side, performing a metrology scan to the first main side to determine an amount of distortion to the substrate due to the formation of the plurality of features, and depositing a stress compensation film along the second main side of the substrate, wherein a stress and a thickness of the stress compensation film is determined based on the amount of distortion to the substrate. The method may further include directing ions to the stress compensation film in an ion implant procedure.Type: ApplicationFiled: August 6, 2021Publication date: October 27, 2022Applicant: Applied Materials, Inc.Inventors: Sony Varghese, Pradeep Subrahmanyan, Dennis Rodier, Kyuha Shim
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Publication number: 20220341029Abstract: Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.Type: ApplicationFiled: July 11, 2022Publication date: October 27, 2022Applicant: Applied Materials, Inc.Inventors: Alexander Jansen, Keith A. Miller, Prashanth Kothnur, Martin Riker, David Gunther, Emily Schooley
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Publication number: 20220343960Abstract: A sense amplifier reference is generated with the same memory cell columns as data cells in order to match signal paths between the data and reference signals. Each row of data memory cells may have a corresponding set of reference cells, which greatly reduces the number of data cells supported by a reference, and in turn reduces the impact of process variations. A memory array may include data columns, a first reference column in the memory array configured to provide a logic 0 reference signal, and a second reference column in the memory array configured to provide a logic 1 reference signal. A circuit is configured to combine at least the logic 0 reference signal and the logic 1 reference signal to generate a reference signal for a sense amplifier to identify the data signal provided from the data columns.Type: ApplicationFiled: April 23, 2021Publication date: October 27, 2022Applicant: Applied Materials, Inc.Inventor: Frank Tzen-Wen Guo
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Publication number: 20220344282Abstract: Provided are methods of reducing the stress of a semiconductor wafer. A wafer map of a free-standing wafer is created using metrology tools. The wafer map is then converted into a power spectral density (PSD) using a spatial frequency scale. The fundamental component of bow is then compensated with a uniform film, e.g., silicon nitride (SiN), deposited on the back side of the wafer.Type: ApplicationFiled: April 27, 2022Publication date: October 27, 2022Applicant: Applied Materials, Inc.Inventors: Pradeep K. Subrahmanyan, Sean S. Kang, Sony Varghese
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Publication number: 20220344453Abstract: Methods may include providing a device structure including a well formed in an epitaxial layer, and forming a plurality of shielding layers in the device structure, wherein at least one shielding layer is formed between a pair of adjacent sacrificial gates of a plurality of sacrificial gates. The method may further include forming a contact over the at least one shielding layer, forming a fill layer over the contact, and forming a plurality of trenches into the device structure, wherein at least one trench of the plurality of trenches is formed between a pair of adjacent shielding layers of the plurality of shielding layers, and wherein the at least one trench of the plurality of trenches is defined in part by a sidewall of the fill layer. The method may further include forming a gate structure within the at least one trench of the plurality of trenches.Type: ApplicationFiled: April 23, 2021Publication date: October 27, 2022Applicant: Applied Materials, Inc.Inventors: Qintao Zhang, Samphy Hong, Jason Appell, David J. Lee
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Publication number: 20220343975Abstract: Methods and architectures for refreshing memory elements in a memory array may initialize a reference array that stores each of the possible values stored in the memory element. The values in the memory array and the reference array will drift in parallel over time. To perform a refresh, the drifted values may be read from the reference array and mapped to the original values that were stored when the reference array was initialized. Next, each value may be read from the memory array and matched with a corresponding value from the reference array. The known original value stored in the reference array can then be used to refresh the corresponding memory element in the memory array.Type: ApplicationFiled: April 23, 2021Publication date: October 27, 2022Applicant: Applied Materials, Inc.Inventor: Christophe J. Chevallier
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Patent number: 11479855Abstract: Apparatus and methods to process one or more wafers are described. A processing chamber comprises a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature, a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature, and a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station. When a wafer is on the support surfaces, a temperature skew of less than about 0.5° C. is developed upon moving the wafer between the stations in about 0.5 seconds.Type: GrantFiled: August 25, 2020Date of Patent: October 25, 2022Assignee: Applied Materials, Inc.Inventors: Joseph AuBuchon, Sanjeev Baluja, Dhritiman Subha Kashyap, Jared Ahmad Lee, Tejas Ulavi, Michael Rice
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Patent number: 11482432Abstract: Methods of processing a semiconductor substrate and apparatus to process semiconductor substrates are described. The methods and apparatus described enable the repetitive cyclic low temperature application of a chemistry and high temperature treatment step to a substrate.Type: GrantFiled: June 17, 2020Date of Patent: October 25, 2022Assignee: Applied Materials, Inc.Inventor: Errol Antonio C. Sanchez
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Patent number: 11479859Abstract: Gas distribution assemblies and process chamber comprising gas distribution assemblies are described. The gas distribution assembly includes a gas distribution plate, a lid and a primary O-ring. The primary O-ring is positioned between a purge channel of a first contact surface of the gas distribution plate and a second contact surface. Methods of sealing a process chamber using the disclosed gas distribution assemblies are described.Type: GrantFiled: April 9, 2020Date of Patent: October 25, 2022Assignee: Applied Materials, Inc.Inventors: Muhannad Mustafa, Muhammad M. Rasheed
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Patent number: 11480712Abstract: Embodiments described herein relate to nanostructured trans-reflective filters having sub-wavelength dimensions. In one embodiment, the trans-reflective filter includes a film stack that transmits a filtered light within a range of wavelengths and reflects light not within the first range of wavelengths. The film stack includes a first metal film disposed on a substrate having a first thickness, a first dielectric film disposed on the first metal film having a second thickness, a second metal film disposed on the first dielectric film having a third thickness, and a second dielectric film disposed on the second metal film having a fourth thickness.Type: GrantFiled: March 25, 2021Date of Patent: October 25, 2022Assignee: Applied Materials, Inc.Inventors: Tapashree Roy, Rutger Meyer Timmerman Thijssen, Robert Jan Visser
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Patent number: 11480865Abstract: Apparatus and methods for improving flatness of extreme ultraviolet (EUV) mask blanks are disclosed. The apparatus and methods may utilize one or more of heating the backside and/or the front side of the EUV mask blank and a cooling system. Interfacial layers of the EUV mask blank are selectively heated, resulting in improved flatness of the EUV mask blanks.Type: GrantFiled: December 14, 2020Date of Patent: October 25, 2022Assignee: Applied Materials, Inc.Inventors: Vibhu Jindal, Sanjay Bhat, Wen Xiao, Vinodh Ramachandran
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Patent number: 11482397Abstract: An ion source is provided. The ion source may include an ion source chamber, and a cathode disposed in the ion source chamber and configured to emit electrons to generate a plasma within the ion source chamber, the cathode comprising a refractory metal, wherein the refractory metal comprises a macrocrystalline structure.Type: GrantFiled: June 3, 2021Date of Patent: October 25, 2022Assignee: Applied Materials, Inc.Inventors: Craig Richard Chaney, Frank Sinclair, Daniel R. Tieger
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Patent number: 11480866Abstract: Apparatus and methods to improve centroid wavelength uniformity of EUV mask blanks are disclosed. The apparatus and methods may utilize one or more of heating the backside and/or the front side of the EUV mask blank. Selected regions and sub regions of the EUV mask blank are selectively heated, resulting in improved centroid wavelength uniformity of EUV mask blanks.Type: GrantFiled: December 15, 2020Date of Patent: October 25, 2022Assignee: Applied Materials, Inc.Inventors: Herng Yau Yoong, Wen Xiao, Ribhu Gautam, Sanjay Bhat, Vibhu Jindal
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Patent number: 11482444Abstract: Implementations described herein provide a substrate support assembly. The substrate support assembly has a first ceramic plate having a workpiece supporting surface and a bottom surface. The first ceramic plate has a plurality of secondary heaters each forming a plurality of micro zones. The substrate support assembly has a second ceramic plate having an upper surface and a lower surface. A first metal bonding layer is disposed between the bottom surface of the first ceramic plate and the upper surface of the second ceramic plate. A third ceramic plate has a top portion and a bottom portion. The third ceramic plate has primary heaters. A second metal bonding layer is disposed between the lower surface of the second ceramic plate and the top portion of the third ceramic plate.Type: GrantFiled: March 31, 2020Date of Patent: October 25, 2022Assignee: Applied Materials, Inc.Inventor: Vijay D. Parkhe
