Abstract: The present disclosure provides methods and systems for correcting the shooting of images from a spatial light modulator (SLM) to a substrate, when cross-scan vibrations, including sub-pixel cross-scan vibrations, are present. The methods and systems include shifting a mask pattern on an SLM rotated relative to the in-scan direction of travel on a substrate, shifting along an axis of the SLM to correct for cross-scan vibrations, and either delaying, or accelerating, the shooting of the mask pattern onto the substrate.

Abstract: Method of forming low-k films with reduced dielectric constant, reduced CHx content, and increased hardness are described. A siloxane film is on a substrate surface using a siloxane precursor comprising O—Si—O bonds and cured using ultraviolet light.

Abstract: A system may include a first semiconductor processing station configured to deposit a material on a first semiconductor wafer, a second semiconductor processing station configured perform measurements indicative of a thickness of the material after the material has been deposited on the first semiconductor wafer, and a controller. The controller may be configured to receive the measurements from the second station; provide an input based on the measurements to a trained model that is configured to generate an output that adjusts an operating parameter of the first station such that the thickness of the material is closer to a target thickness; and causing the first station to deposit the material on a second wafer using the operating parameter as adjusted by the output.

Abstract: Embodiments of the present disclosure generally relate to optical device fabrication. In particular, embodiments described herein relate to a method of forming a plurality of optical devices. In one embodiment, a method includes dicing a plurality of optical device lenses from a substrate, disposing the plurality of optical device lenses on a carrier, and performing at least one process on the plurality of optical device lenses to form a plurality of optical devices, each optical device having a plurality of optical device structures.

Abstract: A method of depositing nitride films is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing nitride films which utilizes separate reaction and nitridation plasmas. In some embodiments, the nitride films have improved growth per cycle (GPC) relative to films deposited by thermal processes or plasma processes with only a single plasma exposure. In some embodiments, the nitride films have improved film quality relative to films deposited by thermal processes or plasma processes with only a single plasma exposure.

Abstract: A magnetic levitation system for transporting a carrier is described. The magnetic levitation system includes a base defining a transportation track, a carrier movable relative to the base along the transportation track, and a plurality of active magnetic bearings provided at the base and configured to face a guided structure of the carrier. The guided structure includes a first guided zone and a second guided zone configured to interact with the plurality of active magnetic bearings and a recessed zone. The recessed zone is arranged between the first guided zone and the second guided zone in a transport direction of the carrier and is recessed with respect to the first guided zone and the second guided zone.

Abstract: Embodiments described herein relate to sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. The device includes a plurality of sub-pixels, each sub-pixel of the plurality of sub-pixels defined by adjacent pixel-defining layer (PDL) structures with inorganic overhang structures disposed on the PDL structures, each sub-pixel having an anode, organic light-emitting diode (OLED) material disposed on the anode, and a cathode disposed on the OLED material. The device is made by a process including the steps of: depositing the OLED material and the cathode by evaporation deposition, and depositing an encapsulation layer disposed over the cathode.

Abstract: Embodiments described herein relate to a device comprising a substrate, a pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality overhang structures. Each overhang structure is defined by a top structure extending laterally past a body structure. Each body structure is disposed over an upper surface of each PDL structure. Overhang structures define a plurality of sub-pixels including a first sub-pixel and a second sub-pixel. Each sub-pixel includes an anode, an organic light-emitting diode (OLED) material, a cathode, and an encapsulation layer. The OLED materials are disposed over the first anode and extends under the overhang structures. The cathodes are disposed over the OLED materials and under the overhang structures. The encapsulation layers are disposed over the first cathode. The first encapsulation layer has a first thickness and the second encapsulation layer has a second thickness different from the first thickness.

Abstract: Exemplary methods of semiconductor processing may include delivering a deposition precursor into a processing region of a semiconductor processing chamber. The methods may include depositing a layer of material on a substrate housed in the processing region of the semiconductor processing chamber. The processing region may be maintained at a first pressure during the deposition. The methods may include extending a baffle within the processing region. The baffle may modify a flow path within the processing region. The methods may include forming a plasma of a treatment or etch precursor within the processing region of the semiconductor processing chamber. The processing region may be maintained at a second pressure during the forming. The methods may include treating the layer of material deposited on the substrate with plasma effluents of the treatment precursor. The processes may be cycled any number of times.

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap. The SAM has a general formula I to XIX, wherein R, R?, R1, R2, R3, R4, and R5 are independently selected from hydrogen (H), alkyl, alkene, alkyne, and aryl, n is from 1 to 20, m is from 1 to 20, x is from 1 to 2, and y is from 1 to 2. A barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

Abstract: Embodiments of the present disclosure are related to directed to a pressure seal for a process chamber. The pressure seal comprises a bottom portion, a compressible middle portion on the bottom portion, and a top portion on the compressible middle portion. The disclosed pressure seal is configured to reduce pumping time of a process region in an interior volume of a processing chamber compared to a process chamber that does not include a pressure seal. Processing chambers including the disclosed pressure seal are configured to process a semiconductor substrate at high temperatures, such as a temperature of greater than or equal to 350° C. Methods of sealing a processing chamber using the disclosed pressure seal are also described.

Abstract: A method of determining a depth of a hole milled into a first region of a sample, comprising: positioning the sample in a processing chamber having a charged particle beam column; milling a hole in the first region of the sample using a charged particle beam generated by the charged particle beam column; identifying a first registration mark at an upper level of the milled hole; identifying a second registration mark at a lower level of the milled hole; taking a first set of images at a first tilt angle, the first set of images including a first image taken with a field of view that captures the first registration mark but not the second registration mark, and a second image taken with a field of view that captures the second registration mark but not the first registration mark; taking a second set of images at a second tilt angle, different than the first tilt angle, the second set of images including a third image taken with a field of view that captures the first registration mark but not the second regis

Abstract: The present technology includes monolithic electroplating seals, such as electroplating seals formed utilizing additive manufacturing. Seals include an external seal member and an internal seal member. The external seal member includes an inner annular radius, an outer annular radius, and an external seal member body defined between an exterior surface and an interior surface opposite the exterior surface. The exterior surface is formed from at least one polymer layer having a porosity of less than or about 10 vol. % and the external seal member body includes a filler. The internal seal member is formed integrally with and extends along at least a portion of the interior surface of the external seal member from the inner annular radius towards the outer annular radius. The internal seal member includes a deformable thermoplastic elastomer.

Abstract: An apparatus may include an electrodynamic mass analysis (EDMA) assembly disposed downstream from the convergent ion beam assembly. The EDMA assembly may include a first stage, comprising a first upper electrode, disposed above a beam axis, and a first lower electrode, disposed below the beam axis, opposite the first upper electrode. The EDMA assembly may also include a second stage, disposed downstream of the first stage and comprising a second upper electrode, disposed above the beam axis, and a second lower electrode, disposed below the beam axis. The EDMA assembly may further include a deflection assembly, disposed between the first stage and the second stage, the deflection assembly comprising a blocker, disposed along the beam axis, an upper deflection electrode, disposed on a first side of the blocker, and a lower deflection electrode, disposed on a second side of the blocker.

Abstract: The present technology includes methods and systems for improving substrate processing. Methods and systems include disposing a substrate on a pedestal that includes a plurality of heating zones each with an independent heater, processing the substrate according to an initial substrate processing recipe that includes an initial pedestal temperature, collecting initial substrate feedback of one or more substrate properties and providing the data as a first input to a substrate control algorithm. Methods include generating a substrate model based upon one or more modeling tests of the substrate, providing the generated substrate model as a second input to the substrate control algorithm, controlling the heater power or heater temperature to achieve a targeted substrate property in one or more substrate regions. Methods include where the correction is calculated and performed by a processor running the substrate control algorithm based upon the first input and the second input.

Abstract: The present technology includes vertical cell dynamic random-access memory (DRAM) array access transistors with improved hole distribution. The arrays include a plurality of bit lines arranged in a first horizontal direction and a plurality of word lines arranged in a second horizontal direction. The arrays include a plurality of channels extending in a vertical direction orthogonal to the first direction and the second horizontal direction, such that the plurality of bit lines intersect with a source/drain region of the plurality of channels, and the plurality of word lines intersect with gate regions of the plurality of channels. In addition, arrays include a p-doped bridge extending between a first channel of the plurality of channels and a second channel of the plurality of channels, where the first channel is spaced apart from the second channel in a row extending in the second horizontal direction.

Abstract: An apparatus, including an electrodynamic mass analysis (EDMA) assembly. The EDMA assembly may include a first upper electrode, disposed above a beam axis; and a first lower electrode, disposed below the beam axis, opposite the first upper electrode, the EDMA assembly arranged to receive a first RF voltage signal at a first frequency. The apparatus may include a deflection assembly, disposed downstream to the EDMA assembly, the deflection assembly comprising a blocker, disposed along the beam axis. The apparatus may include an energy spread reducer (ESR), disposed downstream to the deflection assembly, the energy spread reducer arranged to receive a second RF voltage signal at a second frequency, twice the first frequency. The ESR may include an upper ESR electrode, disposed above the beam axis; and a lower ESR electrode, disposed below the beam axis.

Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

Abstract: Embodiments disclosed herein include a diagnostic substrate, comprising a baseplate, and a first plurality of image sensors on the baseplate, where the first plurality of image sensors are oriented horizontal to the baseplate. In an embodiment, the diagnostic substrate further comprises a second plurality of image sensors on the baseplate, where the second plurality of image sensors are oriented at a non-orthogonal angle to the baseplate. In an embodiment, the diagnostic substrate further comprises a printed circuit board (PCB) on the baseplate, and a controller on the baseplate, where the controller is communicatively coupled to the first plurality of image sensors and the second plurality of image sensors by the PCB. In an embodiment, the diagnostic substrate further comprises a diffuser lid over the baseplate, the PCB, and the controller.