Abstract: A method and apparatus to measure a target (e.g., an alignment mark (e.g., on a substrate)) is disclosed. Relative movement between the target and a measurement spot of a measurement system in a “fly-in” direction (e.g., movement of the target towards the measurement spot) is performed so that a first measurement for the target can be made. Thereafter, relative movement between the target and the measurement spot is made in an opposite “fly-in” direction so that a second measurement for the target can be made. By combining (e.g., averaging) these two measurements, an error is cancelled out, and higher accuracy in the measurement may be achieved.

Abstract: Methods and systems are described for cleaning a support such as a clamp of a chuck that holds a patterning device or a wafer in a lithographic apparatus. The method includes loading a electrostatic cleaning substrate into a lithographic apparatus. The electrostatic cleaning substrate includes at least one electrode. The method further includes bringing the electrostatic cleaning substrate near to the clamping surface to be cleaned and connecting the electrode to a voltage source. Particles present on the support are then transferred to the electrostatic cleaning substrate.

Abstract: An optical assembly and a method of making an optical assembly in which additive manufacturing techniques are used to form a support structure either directly on an optical element or on a carrier that is subsequently bonded to an optical element.

Abstract: Disclosed is a metrology sensor apparatus comprising: an illumination system operable to illuminate a metrology mark in on a substrate with illumination radiation; an optical collection system configured to collect scattered radiation, following scattering of the illumination radiation by the metrology mark; and a wavelength dependent spatial filter for spatially filtering the scattered radiation, the wavelength dependent spatial filter having a spatial profile dependent on the wavelength of the scattered radiation. The wavelength dependent spatial filter may comprise a dichroic filter operable to substantially transmit scattered radiation within a first wavelength range and substantially block scattered radiation within a second wavelength range and at least one second filter operable to substantially block scattered radiation at least within the first wavelength range and the second wavelength range.

Abstract: A method including illuminating a product test substrate with radiation from a component, wherein the product test substrate does not have a device pattern etched therein and yields a non-zero sensitivity when illuminated, the non-zero sensitivity representing a change in an optical response characteristic of the product test substrate with respect to a change in a characteristic of the radiation; measuring at least a part of the radiation redirected by the product test substrate to determine a parameter value; and taking an action with respect to the component based on the parameter value.

Abstract: A method of dislodging contamination from a part of an apparatus used in a patterning process, the method including: providing a cleaning substrate into contact with the part of the apparatus while the part is attached to the apparatus, the cleaning substrate comprising a material configured to chemically react with the contamination; and dislodging contamination on the part of the apparatus by chemical reaction between the material and the contamination.

Abstract: A substrate provided with an anti-reflective coating where the anti-reflective coating is made up of a layer of nanostructures. The nanostructures may be formed by depositing a material such as SiO2 and then using a process such as reactive ion etching in conjunction with an inductively coupled plasma source. Other aspects of the fabrication process are also disclosed.

Abstract: A mask assembly suitable for use in a lithographic process, the mask assembly comprising a patterning device; and a pellicle frame configured to support a pellicle and mounted on the patterning device with a mount; wherein the mount is configured to suspend the pellicle frame relative to the patterning device such that there is a gap between the pellicle frame and the patterning device; and wherein the mount provides a releasably engageable attachment between the patterning device and the pellicle frame.

Abstract: A positioning system for positioning an object. The positioning system includes a stage, a balance mass and an actuator system. The stage is for holding the object. The actuator system is arranged to drive the stage in a first direction while driving the balance mass in a second direction opposite to the first direction. The stage is moveable in the first direction in a movement range. When the stage is moving in the first direction and is at an end of the movement range, the positioning system is arranged to collide the stage frontally into the balance mass.

Abstract: An alignment sensor apparatus includes an illumination system, a first optical system, a second optical system, a detector system, and a processor. The illumination system is configured to transmit an illumination beam along an illumination path. The first optical system is configured to transmit the illumination beam toward a diffraction target on a substrate. The second optical system includes a first polarizing optic configured to separate and transmit an irradiance distribution. The detector system is configured to measure a center of gravity of the diffraction target based on the irradiance distribution outputted from a first polarization branch and a second polarization branch. The processor is configured to measure a shift in the center of gravity of the diffraction target caused by an asymmetry variation in the diffraction target and determine a sensor response function of the alignment sensor apparatus based on the center of gravity shift.

Abstract: A system includes a radiation source, first and second phased arrays, and a detector. The first and second phased arrays include optical elements, a plurality of ports, waveguides, and phase modulators. The optical elements radiate radiation waves. The waveguides guide radiation from a port of the plurality of ports to the optical elements. Phase modulators adjust phases of the radiation waves. One or both of the first and second phased arrays form a first beam and/or a second beam of radiation directed toward a target structure based on the port coupled to the radiation source. The detector receives radiation scattered by the target structure and generates a measurement signal based on the received radiation.

Abstract: A lithography system comprises an illumination system configured to produce abeam of radiation, a support configured to support a patterning device configured to impart a pattern on the beam, a projection system configured to project the patterned beam onto a substrate, and an alignment system comprising an illuminator. The illuminator comprises an optical fiber, an optical fiber protector (714), an optical fiber support (700) comprising a first support arm assembly configured to support the optical fiber protector, an optical system, and an optical system support comprising a second support arm assembly configured to support the optical system.

Abstract: A method of applying a measurement correction includes calculating a first correction value based on a first coefficient and the measurement; calculating a second correction value based on a second coefficient, greater than the first coefficient, and the measurement; and calculating a third correction value based on a third coefficient, greater than the second coefficient, and the measurement. The method also includes applying the third correction value to the measurement if a difference between the first correction value and the third correction value is above a first threshold value; applying the second correction value to the measurement if a difference between the first correction value and the second correction value is above a second threshold value; and applying the first correction value to the measurement if the difference between the first correction value and the second correction value is below or equal to the second threshold value.

Abstract: Methods and systems are described for reducing particles in the vicinity of an electrostatic chuck (300) in which a cleaning reticle or substrate (320) is secured to the chuck, the cleaning reticle or substrate having surfaces partially devoid of conductive material so that an electric field from the chuck can pass through to a volume adjacent the substrate to draw particles (360) in the volume to the surface of the substrate. Voltage supplied to the chuck may have an alternating polarity to enhance the attraction of particles to the surface.

Abstract: A method including: subsequent to a first device lithographic step of a device patterning process, measuring a degraded metrology mark on an object and/or a device pattern feature associated with the degraded metrology mark, the degraded metrology mark arising at least in part from the first device lithographic step on the object; and prior to a second device lithographic step of the device patterning process on the object, creating a replacement metrology mark, for use in the patterning process in place of the degraded metrology mark, on the object.

Abstract: A lithographic apparatus is provided. The lithographic apparatus includes a reticle and an electrostatic clamp configured to releasably hold the reticle. The electrostatic clamp includes a first substrate having opposing first and second surfaces, a plurality of burls located on the first surface and configured to contact the reticle, a second substrate having opposing first and second surfaces. The first surface of the second substrate is coupled to the second surface of the first substrate. A plurality of cooling elements are located between the first surface of the second substrate and the second surface of the first substrate. The cooling elements are configured to cause electrons to travel from the second surface of the first substrate to the first surface of the second substrate. Each cooling element is substantially aligned with a respective burl.

Abstract: A lithographic cluster includes a track unit and a lithographic apparatus. The lithographic apparatus includes an alignment sensor and at least one controller. The track unit is configured to process a first lot and a second lot. The lithographic apparatus is operatively coupled to the track unit. The alignment sensor is configured to measure an alignment of at least one alignment mark type of a calibration wafer. At least one controller is configured to determine a correction set for calibrating the lithographic apparatus based on the measured alignment of the at least one alignment mark type and apply first and second weight corrections to the correction set for processing the first and second lots, respectively, such that overlay drifts or jumps during processing the first and second lots are mitigated.

Abstract: A system for and method of processing a wafer in which a scan signal is analyzed locally to extract information about alignment, overlay, mark quality, wafer quality, and the like.

Abstract: An inspection apparatus, including: an objective configured to receive diffracted radiation from a metrology target having positive and negative diffraction order radiation; an optical element configured to separate the diffracted radiation into portions separately corresponding to each of a plurality of different values or types of one or more radiation characteristics and separately corresponding to the positive and negative diffraction orders; and a detector system configured to separately and simultaneously measure the portions.

Abstract: An alignment system configured to be substantially insensitive to thermal variations in its system during alignment measurements. The alignment system includes a sensor system, a support structure, a sensing element, a position measurement system, and an athermal interface between the sensing element and the support structure. The sensor system is configured to determine a position of an alignment mark on a substrate and the support structure is configured to support the sensor system. The sensing element is configured to detect an unintentional displacement of the support structure and the position measurement system is configured to measure the unintentional displacement relative to a reference element based on the detected unintentional displacement. The athermal interface is configured to prevent detection of temperature induced displacement of the support structure by the sensing element.