Abstract: A substrate restraining system comprising: a substrate table and a plurality of circumferentially arranged restrainers each comprising a spring, wherein the spring has a proximal end and a distal end, wherein the distal end of the spring is radially displacable, and wherein a base of the proximal end of the spring is fixed to the substrate table at a fixing location.

Abstract: Provided are light sources and methods of controlling them, and devices and methods for use in measurement applications, particularly in metrology, for example in a lithographic apparatus. The methods and devices provide mechanisms for detection and/or correction of variations in the light source, in particular stochastic variations. Feedback or feedforward approaches can be used for the correction of the source and/or the metrology outputs. An exemplary method of controlling the spectral output of a light source which emits a time-varying spectrum of light includes the steps of: determining at least one characteristic of the spectrum of light emitted from the light source; and using said determined characteristic to control the spectral output.

Abstract: A method for projecting a charged particle multi-beam toward a sample comprises manipulating respective sub-beams of a charged particle multi-beam using a control lens array comprising a plurality of control lenses for the respective sub-beams; controlling the control lens array to manipulate the sub-beams such that the sub-beams are shaped by respective apertures of a beam shaping aperture array such that less than a threshold current of charged particles of each sub-beam passes through the respective apertures of the beam shaping aperture array, down-beam of the control lens array, comprising a plurality of apertures for the respective sub-beams; and controlling the control lens array to manipulate the sub-beams such that at least the threshold current of at least a proportion of the sub-beams passes through the respective apertures of the beam shaping aperture array.

Abstract: Disclosed herein is a non-transitory computer readable medium that has stored therein a computer program, wherein the computer program comprises code that, when executed by a computer system, instructs the computer system to perform a method for generating synthetic distorted images, the method comprising: obtaining an input set that comprises a plurality of distorted images; determining, using a model, distortion modes of the distorted images in the input set; generating a plurality of different combinations of the distortion modes; generating, for each one of the plurality of combinations of the distortion modes, a synthetic distorted image in dependence on the combination; and including each of the synthetic distorted images in an output set.

Abstract: A method includes detecting data associated with a patterning device and/or a lithographic apparatus, performing an action from a plurality of actions when a determination not to proceed is made, and performing the action on the patterning device and/or a lithographic apparatus.

Abstract: Methods and apparatus for characterizing a semiconductor manufacturing process performed on a substrate. First data is obtained associated with fingerprint data of the substrate measured after a first processing step. Second data is obtained associated with fingerprint data of the substrate measured after a second processing step. A statistical model is used to decompose the first and second data into a first class of fingerprint components mutually correlating between the first and second data and a second class of fingerprint components not mutually correlating between the first and second data. At least one of the first class fingerprint of components and the second class of fingerprint components are used to characterize the semiconductor manufacturing process.

Abstract: Disclosed is a method for measuring alignment on an alignment mark, and associated apparatuses. The method comprises illuminating the alignment mark with illumination comprising at least one wavelength; capturing the scattered radiation scattered from the alignment mark as a result of said illumination step, and determining at least one position value for said alignment mark from an angularly resolved representation of said scattered radiation, wherein said alignment mark, or a feature thereof, is smaller than said at least one wavelength in at least one dimension of a substrate plane.

Abstract: Disclosed is a pupil shaping arrangement for obtaining a defined pupil intensity profile for a metrology illumination beam configured for use in a metrology application. The pupil shaping arrangement comprises an engineered diffuser (ED) having a defined far-field profile configured to impose said defined pupil intensity profile on said metrology illumination beam. The pupil shaping arrangement may further comprise a multimode fiber (MMF) and be configured to reduce spatial coherence of coherent radiation.

Abstract: Systems and methods of enhancing imaging resolution by reducing crosstalk between detection elements of a secondary charged-particle detector in a multi-beam apparatus are disclosed. The multi-beam apparatus may comprise an electro-optical system for projecting a plurality of secondary charged-particle beams from a sample onto a charged-particle detector. The electro-optical system may include a first pre-limit aperture plate comprising a first aperture configured to block peripheral charged-particles of the plurality of secondary charged-particle beams, and a beam-limit aperture array comprising a second aperture configured to trim the plurality of secondary charged-particle beams. The charged-particle detector may include a plurality of detection elements, wherein a detection element of the plurality of detection elements is associated with a corresponding trimmed beam of the plurality of secondary charged-particle beams.

Abstract: A metrology method relating to measurement of a structure on a substrate, the structure being subject to one or more asymmetric deviation. The method includes obtaining at least one intensity asymmetry value relating to the one or more asymmetric deviations, wherein the at least one intensity asymmetry value includes a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by the structure; determining at least one phase offset value corresponding to the one or more asymmetric deviations based on the at least one intensity asymmetry value; and determining one or more measurement corrections for the one or more asymmetric deviations from the at least one phase offset value.

Abstract: A method of, and associated apparatuses for, performing a position measurement on an alignment mark including at least a first periodic structure having a direction of periodicity along a first direction. The method includes obtaining signal data relating to the position measurement and fitting the signal data to determine a position value. The fitting uses one of a modulation fit or a background envelope periodic fit.

Abstract: Disclosed is a method for performing a measurement of an exposed pattern in photoresist on a substrate and an associated metrology device. The method comprises imparting a beam of measurement radiation on said exposed pattern over a measurement area of a size which prevents or mitigates photoresist damage from the measurement radiation; capturing scattered radiation comprising said measurement radiation subsequent to it having been scattered from said exposed pattern and detecting the scattered radiation on at least one detector. A value for a parameter of interest is determined from the scattered radiation.

Abstract: The present disclosure describes an image forming element having a semiconductor chip with micro-electro-mechanical-system (MEMS) devices and voltage generators, each voltage generator being configured to generate a voltage used by one or more of the MEMS devices. A floating ground may be used to add a voltage to the voltage generated by the voltage generators. The semiconductor chip may include electrical connections, where each voltage generator is configured to provide the voltage to the one or more MEMS devices through the electrical connections. The MEMS devices may define a boundary in the semiconductor chip within which the MEMS devices, the voltage generators, and the electrical connections are located. Each MEMS device may generate an electrostatic field to manipulate an electron beamlet of a multi-beam charged particle microscope. The MEMS devices may be organized into groups based on a distance to a reference location (e.g., optical axis) in the semiconductor chip.

Abstract: A fluid handling system that includes a liquid confinement structure configured to confine immersion liquid to a space between at least a part of the liquid confinement structure and a surface of a substrate. The fluid handling system also includes a mechanism configured to vibrate a vibration component in contact with the immersion liquid.

Abstract: A method of determining a parameter of a lithographic apparatus, wherein the method includes providing first height variation data of a first substrate, providing first performance data of a first substrate, and determining a model based on the first height variation data and the first performance data. The method further includes obtaining second height variation data of a second substrate, inputting the second height variation data to the model, and determining second performance data of the second substrate by running the model. Based on the second performance data, the method determines a parameter of the apparatus.

Abstract: A substrate support for supporting a substrate. The substrate support includes a main body, a clamping device and a dither device. The main body includes a support surface for supporting the substrate. The clamping device is arranged to provide the clamping force to clamp the substrate on the support surface. The dither device is configured to dither the clamping force. The dither device may be configured to dither the clamping force while the substrate is being loaded onto the support surface.

Abstract: Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.

Abstract: Disclosed is an object table for holding an object, comprising: an electrostatic clamp arranged to clamp the object on the object table; a neutralizer arranged to neutralize a residual charge of the electrostatic clamp; a control unit arranged to control the neutralizer, wherein the residual charge is an electrostatic charge present on the electrostatic clamp when no voltage is applied to the electrostatic clamp.

Abstract: Disclosed is a method of metrology such as alignment metrology. The method comprises obtaining pupil plane measurement dataset at a pupil plane relating to scattered radiation resultant from a measurement of a structure. The method comprises determining a measurement value or correction therefor using the pupil plane measurement dataset and a sensor term relating to sensor optics used to perform said measurement.

Abstract: A method of obtaining focus and dose data that requires no special marks and that uses images of in-die features is described. A focus/dose matrix wafer is created. Dimensions such as critical dimension (CD), CD uniformity (CDU), edge placement error (EPE), etc., at in-die locations are measured using a charged particle inspection system having a large field of view. Machine learning or regression methods are used to determine a relationship between focus and dose and the measured data. The same dimensions can then be measured on a production wafer and the relationship can be utilized to determine the focus and dose for the production wafer.