Abstract: A radiation source includes a fuel supply, a collector, a debris mitigation system, and a temperature control system. The fuel supply device supplies fuel. The excitation device excites the fuel into a plasma. The collector collects radiation emitted by the plasma and directs the radiation to a beam exit. The debris mitigation system collects debris generated by the plasma and has a first component having a first conduit passing therethrough and a second component having a second conduit passing therethrough. The temperature control system increases or decreases temperatures of the first component and the second component by selectively heating or cooling a thermal transfer fluid circulating through the respective conduit. The temperature control system cools the first component to a first temperature that is below the melting point of the fuel and heats the second component to a second temperature that is above the melting point of the fuel.

Abstract: Disclosed is a phase modulator apparatus comprises at least a first phase modulator for modulating input radiation, and a metrology device comprising such a phase modulator apparatus. The first phase modulator comprises a first moving grating in at least an operational state for diffracting the input radiation and Doppler shifting the frequency of the diffracted radiation; and a first compensatory grating element comprising a pitch configured to compensate for wavelength dependent dispersion of at least one diffraction order of said diffracted radiation.

Abstract: Disclosed herein is an apparatus comprising: a source configured to emit charged particles, an optical system and a stage; wherein the stage is configured to support a sample thereon and configured to move the sample by a first distance in a first direction; wherein the optical system is configured to form probe spots on the sample with the charged particles; wherein the optical system is configured to move the probe spots by the first distance in the first direction and by a second distance in a second direction, simultaneously, while the stage moves the sample by the first distance in the first direction; wherein the optical system is configured to move the probe spots by the first distance less a width of one of the probe spots in an opposite direction of the first direction, after the stage moves the sample by the first distance in the first direction.

Abstract: Disclosed is a wavefront sensor for measuring a tilt of a wavefront at an array of locations across a beam of radiation, wherein said wavefront sensor comprises a film, for example of Zirconium, having an indent array comprising an indent at each of said array of locations, such that each indent of the indent array is operable to perform focusing of said radiation. Also disclosed is a radiation source and inspection apparatus comprising such a wavefront sensor.

Abstract: Disclosed herein is an apparatus comprising: a source of charged particles configured to emit a beam of charged particles along a primary beam axis of the apparatus; a condenser lens configured to cause the beam to concentrate around the primary beam axis; an aperture; a first multi-pole lens; a second multi-pole lens; wherein the first multi-pole lens is downstream with respect to the condenser lens and upstream with respect to the second multi-pole lens; wherein the second multi-pole lens is downstream with respect to the first multi-pole lens and upstream with respect to the aperture.

Abstract: Methods and apparatus for forming a patterned layer of carbon are disclosed. In one arrangement, a selected portion of a surface of a solid structure is irradiated with extreme ultraviolet radiation in the presence of a carbon-containing precursor. The radiation interacts with the solid structure in the selected portion to cause formation of a layer of carbon in the selected portion from the carbon-containing precursor. The layer of carbon is formed in a pattern defined by the selected portion.

Abstract: An objective lens for forming an image of an object. The objective lens includes, sequentially from an image side to an object side, a first lens group having negative refractive power, and a second lens group having positive refractive power.

Abstract: Disclosed herein is an electron-optical device, a lens assembly and an electron-optical column. The electron-optical device comprises an array substrate and an adjoining substrate and is configured to provide a potential difference between the substrates. An array of apertures is defined in each of the substrates for the path of electron beamlets. The array substrate has a thickness which is stepped so that the array substrate is thinner in the region corresponding to the array of apertures than another region of the array substrate.

Abstract: Systems and methods of observing a sample in a multi-beam apparatus are disclosed. The multi-beam apparatus may include an electron source configured to generate a primary electron beam, a pre-current limiting aperture array comprising a plurality of apertures and configured to form a plurality of beamlets from the primary electron beam, each of the plurality of beamlets having an associated beam current, a condenser lens configured to collimate each of the plurality of beamlets, a beam-limiting unit configured to modify the associated beam current of each of the plurality of beamlets, and a sector magnet unit configured to direct each of the plurality of beamlets to form a crossover within or at least near an objective lens that is configured to focus each of the plurality of beamlets onto a surface of the sample and to form a plurality of probe spots thereon.

Abstract: A system (400) includes an illumination system (402), a detector (404), and a comparator (406). The illumination system includes a radiation source (408) and a spatial light modulator (410). The radiation source generates a beam of radiation (442). The spatial light modulator directs the beam toward a surface (436) of an object (428) and adjusts a spatial intensity distribution of the beam at the surface. The detector receives radiation (444) scattered at the surface and by a structure (434) near the surface. The detector generates a detection signal based on the received radiation. The comparator receives the detection signal, generates a first image based on the detection signal, and distinguishes between a spurious signal and a signal corresponding to a presence of a foreign particle on the surface based on the first image and the adjusted spatial intensity distribution.

Abstract: An improved particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including a thermal conditioning station for preconditioning a temperature of a wafer is disclosed. The charged particle beam apparatus may scan the wafer to measure one or more characteristics of the structures on the wafer and analyze the one or more characteristics. The charged particle beam apparatus may further determine a temperature characteristic of the wafer based on the analysis of the one or more characteristics of the structure and adjust the thermal conditioning station based on the temperature characteristic.

Abstract: Disclosed herein is an apparatus comprising: a first electrically conductive layer; a second electrically conductive layer; a plurality of optics element s between the first electrically conductive layer and the second electrically conductive layer, wherein the plurality of optics elements are configured to influence a plurality of beams of charged particles; a third electrically conductive layer between the first electrically conductive layer and the second electrically conductive layer; and an electrically insulating layer physically connected to the optics elements, wherein the electrically insulating layer is configured to electrically insulate the optics elements from the first electrically conductive layer, and the second electrically conductive layer.

Abstract: An alignment apparatus includes an illumination system configured to direct one or more illumination beams towards an alignment target and receive the diffracted beams from the alignment target. The alignment apparatus also includes a self-referencing Interferometer configured to generate two diffraction sub-beams, wherein the two diffraction sub-beams are orthogonally polarized, rotated 180 degrees with respect to each other around an alignment axis, and spatially overlapped. The alignment apparatus further includes a beam analyzer configured to generate interference between the overlapped components of the diffraction sub-beams and produce two orthogonally polarized optical branches, and a detection system configured to determine a position of the alignment target based on light intensity measurement of the optical branches, wherein the measured light intensity is temporally modulated by a phase modulator.

Abstract: Disclosed is a wavefront sensor for measuring a wavefront of a radiation. The wavefront sensor comprises a mask comprising a pattern located in path of the radiation to interact with the radiation. The radiation impinging on the mask forms a radiation detection pattern on a radiation detector subsequent to the mask, and the pattern of the mask is designed at least partly based on a requirement of the radiation detection pattern.

Abstract: A system includes an illumination system, an optical element, a switching element and a detector. The illumination system includes a broadband light source that generates a beam of radiation. The dispersive optical element receives the beam of radiation and generates a plurality of light beams having a narrower bandwidth than the broadband light source. The optical switch receives the plurality of light beams and transmits each one of the plurality of light beams to a respective one of a plurality of alignment sensor of a sensor array. The detector receives radiation returning from the sensor array and to generate a measurement signal based on the received radiation.

Abstract: A charged particle beam apparatus includes a beamlet forming unit configured to form and scan an array of beamlets on a sample. A first portion of the array of beamlets is focused onto a focus plane, and a second portion of the array of beamlets has at least one beamlet with a defocusing level with respect to the focus plane. The charged particle beam apparatus also includes a detector configured to detect an image of the sample formed by the array of beamlets, and a processor configured to estimate a level of separation between the focus plane and the sample based on the detected image and then reduce the level of separation based on the estimated level.

Abstract: A charged particle beam detector may include a circuit with a storage cell configured to receive a signal representing an output of a sensing element; a storage cell multiplexer configured to selectively transmit the signal representing the output of the sensing element to the storage cell; a threshold detector configured to compare the signal representing the output of the sensing element to a threshold; and a converter configured to perform signal processing on a signal transmitted from the storage cell.

Abstract: The invention relates to an exposure apparatus and a method for projecting a charged particle beam onto a target. The exposure apparatus comprises a charged particle optical arrangement comprising a charged particle source for generating a charged particle beam and a charged particle blocking element and/or a current limiting element for blocking at least a part of a charged particle beam from a charged particle source. The charged particle blocking element and the current limiting element comprise a substantially flat substrate provided with an absorbing layer comprising Boron, Carbon or Beryllium. The substrate further preferably comprises one or more apertures for transmitting charged particles. The absorbing layer is arranged spaced apart from the at least one aperture.

Abstract: Systems and methods of observing a sample using a charged-particle beam apparatus in voltage contrast mode are disclosed. The charged-particle beam apparatus comprises a charged-particle source, an optical source, a charged-particle detector configured to detect charged particles, and a controller having circuitry configured to apply a first signal to cause the optical source to generate the optical pulse, apply a second signal to the charged-particle detector to detect the second plurality of charged particles, and adjust a time delay between the first and the second signals. In some embodiments, the controller having circuitry may be further configured to acquire a plurality of images of a structure, to determine an electrical characteristic of the structure based on the rate of gray level variation of the plurality of images of the structure, and to simulate, using a model, a physical characteristic of the structure based on the determined electrical characteristic.

Abstract: The invention relates to a substrate handling and exposure arrangement comprising a plurality of lithography apparatus, a clamp preparation unit for clamping a wafer on a wafer support structure, a wafer track, wherein the clamp preparation unit is configured for accepting a wafer from the wafer track, and an additional wafer track for transferring the clamp towards the plurality of lithography apparatus.