Abstract: Since a mask check wafer can utilize a different process than a production wafer, a high-contrast illumination setting with lower pupil fill ratio (PFR) that leads to a reduction of the productivity of the scanner can be utilized. By selecting a high-contrast illumination setting, which is different than that used on a production wafer, an improved ratio of particle printability to stochastic defects can be achieved. In combination, or instead higher dose resist can be utilized. This allows longer exposure of the wafer, such that the impact of photon shot noise is reduced, also resulting in an improved ratio of particle printability to stochastic defects. As a result, the particle printability can be enhanced further without leading to an excessive amount of stochastic defects. Because of this, the number of sites, and therefore the throughput, of a charged particle inspection and analysis can be significantly improved.

Abstract: Apparatuses, systems, and methods for grouping a plurality of patterns extracted from image data are disclosed. In some embodiments, the method for grouping the patterns comprises receiving the image data including the plurality of patterns that represent features to be formed on a portion of a wafer. The method also comprises separating the plurality of patterns after Fourier Transform into multiple sets of patterns. The method further comprises performing, to a respective set of patterns, a hierarchical clustering to obtain a plurality of subsets of patterns by recursively evaluating features related to similarity between patterns within the respective set of patterns.

Abstract: Disclosed is a method of determining a substrate deformation metric relating to at least one substrate, the substrate deformation metric describing deformation across the at least one substrate. The method comprises obtaining alignment data relating to measurement of a plurality of structures on said substrate using a plurality of illumination conditions; and determining substrate deformation metric values for the substrate deformation metric which minimizes the number of basis vectors which are required to expand dispersion due to structure deformation of said plurality of structures.

Abstract: Disclosed herein is a method of reducing a sample charging effect in a scanning electron microscope (SEM) image, the method comprising: obtaining a first SEM image of a target feature on a sample from a first electron beam scan in a first scanning direction; obtaining a second SEM image of the target feature on the sample from a second electron beam scan in a second scanning direction different from the first scanning direction; aligning the first SEM image and the second SEM image; and generating an output image based a combination of the first SEM image and the second SEM image.

Abstract: An improved method of defect classification is disclosed. An improve method comprises obtaining an inspection image, obtaining layout data associated with the image, obtaining a probability map derived from the layout data, wherein the probability map identifies a probability of a first type of defect occurring in a region of the layout data, identifying a defect in the inspection image occurring at a first location, and classifying the defect based on the probability map and the first location.

Abstract: A laser beam metrology system (500) configured to co-operate with a laser beam system that is configured to sequentially direct a first laser beam pulse and a second laser beam pulse (430) to a target along two independent optical paths, the laser beam metrology system comprising a beam steering device (470) and a detection system (510). A laser beam system comprising the laser beam metrology system and a EUV source is also described.

Abstract: A target for determining a performance parameter of a lithographic process, the target comprising a first sub-target formed by at least two overlapping gratings, wherein the underlying grating of the first sub-target has a first pitch and the top lying grating of the first sub-target has a second pitch, at least a second sub-target formed by at least two overlapping gratings, wherein the underlying grating of the second sub-target has a third pitch and the top lying grating of the second sub-target has a fourth pitch.

Abstract: An optical apparatus is disclosed, the apparatus comprising an optical element having a reflective surface for reflecting incident radiation in a beam path, and at least one sensor configured to sense radiation corresponding to a temperature of a respective portion of a backside surface of the optical element. Also disclosed is a method of controlling a temperature of a reflective surface of an optical element in a lithographic apparatus.

Abstract: A method includes determining optical aberrations of an optical system, identifying an illumination profile that compensates for the optical aberrations of the optical system, and curing a layer of optical cement of an optical device using a modulated energy beam to achieve the identified illumination profile.

Abstract: A monolithic optical element for generating broadband radiation upon receiving input radiation at an input end of the optical element is disclosed, the optical element including: a hollow core region for guiding the input radiation along a longitudinal axis of the optical element towards an output end of the optical element; a cladding region surrounding the core region along the longitudinal axis and including transversally arranged micro-structures configured to provide non-linear optical behavior to the optical element causing the generation of the broadband radiation; and a supporting region surrounding the cladding region along the longitudinal axis of at least part of the optical element, wherein the supporting region has a transversal dimension which is sufficiently large to render the at least part of the optical element substantially rigid.

Abstract: A method provides the steps of receiving an image from a metrology tool, determining individual units of said image and discriminating the units which provide accurate metrology values. The images are obtained by measuring the metrology target at multiple wavelengths. The discrimination between the units, when these units are pixels in said image, is based on calculating a degree of similarity between said units.

Abstract: A fluid handling system for wetting a substrate irradiated by radiation. The fluid handling system include a first device to confine a first liquid to a first space between the first device and the substrate. The first device includes a first liquid supply member to provide the first liquid to the first space and an extraction member to remove liquid. The fluid handling system further includes a second device including a second liquid supply member to provide a second liquid to a second space between the second device and the substrate, wherein there is a gap on the surface of the substrate between the first and second liquids. The fluid handling system is configured to provide the second liquid to the second space without removing any liquid from the second space to form a liquid layer, and is configured to provide the first and second liquids on the substrate simultaneously.

Abstract: Disclosed is a method for determining a process correction for at least a first process of a lithographic process, comprising at least the first process performed on at least a first substrate using at least a first apparatus and a second process performed on at least said first substrate using at least a second apparatus, where a correction actuation capability of the first apparatus differs from the second apparatus, comprising: obtaining metrology data relating to said first substrate; modeling said metrology data using a first model, the model being related to said first apparatus; and controlling said first process based on the modeled metrology data; the modeling step and/or an additional processing step comprises distributing a penalty in a performance parameter across said first process and said second process such that the distributed penalties in the performance parameter are within their respective specifications of the performance parameter.

Abstract: There is described a connection assembly (24) for a high-pressure liquid metal supply system used in an EUV light source comprising a monolithic block, wherein the monolithic block includes: at least one connection (21) for connecting to a reservoir (18,19) configured to hold liquid metal: interior passages (25) configured to fluidly connect the at least one connection with at least two liquid metal outlets/inlets (22, 23): at least two freeze valves (15,16,17) configured to block a passage by solidifying liquid metal therein. Also described is a liquid metal storage assembly including such a connection assembly, a lithography apparatus including such a liquid metal storage assembly or such a connection assembly, as well as the use of such assemblies or apparatus in a lithographic apparatus or method.

Abstract: A tool for assessing a hole property of one or more holes in a component of a lithographic apparatus, the tool including: an assessment substrate; a fluid supply configured to supply a jet of fluid from each of the one or more holes to a first surface of the assessment substrate, wherein the fluid is supplied at a fluid temperature such that the one or more jets of fluid cause local temperature variations in at least part of the assessment substrate; and an infrared sensor configured to sense a temperature distribution of the assessment substrate in dependence on the local temperature variations.

Abstract: A two-dimensional diffraction grating for a phase-stepping measurement system for determining an aberration map for a projection system comprises a substrate provided with a square array of through-apertures, wherein the diffraction grating is self-supporting. It will be appreciated that for a substrate provided with a square array of through-apertures to be self-supporting at least some substrate material is provided between each through-aperture and the adjacent through apertures. A method of designing a two-dimensional diffraction grating for a phase-stepping measurement system for determining an aberration map for a projection system comprises: selecting a general geometry for the two-dimensional diffraction grating, the general geometry having at least one parameter; and selecting values for the least one parameter that result in a grating efficiency map for the two-dimensional diffraction grating so as to control the contributions to a first harmonic of a phase stepping signal.

Abstract: A method for determining a layout of mark positions across a patterning device or substrate, the method including: obtaining a model configured to model data associated with measurements performed on the patterning device or substrate at one or more mark positions; obtaining an initial mark layout including initial mark positions; reducing the initial mark layout by removal of one or more mark positions to obtain a plurality of reduced mark layouts, each reduced mark layout obtained by removal of a different mark position from the initial mark layout; determining a model uncertainty metric associated with usage of the model for each reduced mark layout out of the plurality of reduced mark layouts; and selecting one or more reduced mark layouts based on its associated model uncertainty metric.

Abstract: A laser focusing system (330) for use in an EUV radiation source is described, the laser focusing system comprising: •—a first curved mirror (330.1) configured to receive a laser beam from a beam delivery system (320) and generate a first reflected laser beam (316); •—a second curved mirror (330.2) configured to receive the first reflected laser beam (316) and generate a second reflected laser beam (317), wherein the laser focusing system (330) is configured to focus the second reflected laser beam (317) to a target location (340) in a vessel (350) of the EUV radiation source (360).

Abstract: A vessel (16) for an EUV radiation source, the vessel comprising a first opening (30) for accessing an interior (32) of the vessel, a first access member (34) configured to allow or prevent access to the interior of the vessel through the first opening, a second opening (36) for accessing the interior of the vessel, the second opening being arranged in the first access member and a second access member (38) arranged on the first access member and configured to allow or prevent access to the interior of the vessel through the second opening.

Abstract: A method of evaluating a patterning process, the method including: obtaining the result of a first measurement of a first metrology target; obtaining the result of a second measurement of a second metrology target, the second metrology target having a structural difference from the first metrology target that generates a sensitivity difference and/or an offset, of a process parameter of the patterning process between the first and second metrology targets; and determining a value pertaining to the patterning process based on the results of the first and second measurements.