Abstract: A computer implemented method for diagnosing a system includes: receiving a causal graph, the causal graph defining (i) a plurality of nodes each representing a module of a plurality of modules of a system, wherein each module is characterized by one or more signals; and (ii) edges connected between the nodes, the edges representing propagation of performance between modules; generating a reasoning tool by augmenting the causal graph with diagnostics knowledge based on historically determined relations between performance, statistical and causal characteristics of at least one module out of the plurality of modules; obtaining a health metric of the at least one module, wherein the health metric is associated with the one or more signals associated with the at least one module; and using the health metric as an input to the reasoning tool to identify a module that is the most likely cause of the behavior.

Abstract: An assembly for receiving a pump radiation to interact with a gas medium at an interaction space to generate an emitted radiation. The assembly comprising: an object with a hollow core, wherein the hollow core has an elongated volume through the object, wherein the interaction space is located inside the hollow core, and a heat conductive structure that connects at multiple locations of an outside wall of the object for transferring heat generated at the interaction space away from the object.

Abstract: An inspection system includes a projection system including a radiation source configured to transmit an illumination beam along an illumination path and an aperture stop configured to select a portion of the illumination beam. The inspection system also includes an aperture stop that selects a portion of the illumination beam and an optical system that transmits the selected portion of the illumination beam towards an object and transmit a signal beam scattered from the object. The inspection system also includes a detector that detects the signal beam.

Abstract: The present invention relates to an optical isolator for a seed laser, comprising: an acousto-optic modulator crystal configured to manipulate laser light incident thereto, and at least one cooling system configured to regulate a temperature of the crystal, said cooling system comprising: a cooling element including one or more channels for a fluidic cooling medium, a heat transfer assembly arranged between the crystal and the cooling element to transfer heat from the crystal to the cooling element, wherein the heat transfer assembly includes an active heat transfer element.

Abstract: A detector assembly for use in a charged particle device for an assessment tool to detect signal particles emitted by a sample in response to a charged particle beam, the detector assembly including: a scintillator element configured to generate photons on interaction with signal particles above a first energy threshold; a charge based element configured to detect signal particles below a second energy threshold, wherein the charge based element is positioned so that at least some of the signal particles above a first energy threshold pass through the charged based element to the scintillator element.

Abstract: Methods and systems for determining information about a target structure are disclosed. In one arrangement, a value of an asymmetry indicator for the target structure is obtained. The value of the asymmetry indicator represents an amount of an overlay independent asymmetry in the target structure. An error in an initial overlay measurement performed on the target structure at a previous time is estimated. The estimation is performed using the obtained value of the asymmetry indicator and a relationship between values of the asymmetry indicator and overlay measurement errors caused at least partially by overlay independent asymmetries. An overlay in the target structure is determined using the initial overlay measurement and the estimated error.

Abstract: A resist composition for use in the fabrication of integrated circuits, the use of a resist composition, and a lithographic method utilizing a resist composition, wherein the resist composition includes an alkyltin-oxo cage having a counterion selected from tetrakis(pentafluorophenyl) borate, tetrakis[3,5-bis(trifluoromethyl)phenyl]borate, tetrakis[3,5-bis(tert-butyl)phenyl]borate, or tetrakis[(3,5-bis(1,1,1,3,3,3-hexafluoro-2-methoxypropan-2-yl)phenyl)phenyl]borate. A lithographic method including: providing a resist composition including an alkyltin-oxo cage having a counterion selected from the above borate groups; exposing the resist composition to a patterned radiation beam or an electron beam to form a pattern in the resist composition; and developing the exposed resist composition to form a circuit pattern.

Abstract: A method of producing photonic crystal fibers (PCFs) is disclosed, the method includes: 1) obtaining an intermediate PCF having an initial outer fiber diameter of less than 1 mm; and 2) elongating the intermediate PCF so as to controllably reduce at least one dimension of the intermediate PCF.

Abstract: Disclosed is a method for performing a measurement of an exposed pattern in photoresist on a substrate and an associated metrology device. The method comprises imparting a beam of measurement radiation on said exposed pattern over a measurement area of a size which prevents or mitigates photoresist damage from the measurement radiation; capturing scattered radiation comprising said measurement radiation subsequent to it having been scattered from said exposed pattern and detecting the scattered radiation on at least one detector. A value for a parameter of interest is determined from the scattered radiation.

Abstract: The present application discloses detector assembly for a charged particle assessment apparatus, the detector assembly comprising a plurality of electrode elements, each electrode element having a major surface configured to be exposed to signal particles emitted from a sample, wherein between adjacent electrode elements is a recess that is recessed relative to the major surfaces of the electrode elements, and wherein at least one of the electrode elements is a detection element configured to detect signal particles and the recess extends laterally behind the detection element. Charged particle assessment devices and apparatus, and corresponding methods are also provided.

Abstract: To monitor semiconductor manufacturing process variation, contours of identical pattern features are determined based on SEM images, and the contours are aggregated and statistically analyzed to determine the variation of the feature. Some of the contours are outliers, and the aggregation and averaging of the contours “hides” these outliers. The present disclosure describes filtering certain outlier contours before they are aggregated and statistically analyzed. The filtering can be performed at multiple levels, such as based on individual points on the contours in the set of inspection contours, or based on overall geometrical shapes of the contours in the set of inspection contours.

Abstract: Systems, apparatuses, and methods are provided for correcting the detected positions of alignment marks disposed on a substrate and aligning the substrate using the corrected data to accurately expose patterns on the substrate. An example method can include receiving a measurement signal including a combined intensity signal corresponding to first and second diffracted light beams diffracted from first and second alignment targets having different orientations. The example method can further include fitting the combined intensity signal using templates to determine weight values and determining, based on the templates and weight values, first and second intensity sub-signals corresponding to the first and second diffracted light beams. The method can further include determining first and second intensity imbalance signals based on the first and second intensity sub-signals and determining a set of corrections to the measurement signal based on the first and second intensity imbalance signals.

Abstract: A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burls to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.

Abstract: Disclosed is a method for modeling alignment data over a substrate area relating to a substrate being exposed in a lithographic process. The method comprises obtaining alignment data relating to said substrate and separating the alignment data into systematic component which is relatively stable between different substrates and a non-systematic component which is not relatively stable between different substrates. The systematic component and the non-systematic component are individually modeled and a process correction for the substrate determined based on the modeled systematic component and modeled non-systematic component.

Abstract: A method and apparatus for cleaning vacuum ultraviolet (VUV) optics (e.g., one or more mirrors of a VUV) of a substrate inspection system is disclosed. The cleaning system ionizes or disassociates hydrogen gas in a VUV optics environment to generate hydrogen radicals (e.g., H*) or ions (e.g., H+, H2+, H3+, which remove water or hydrocarbons from the surface of the one or more mirrors. The one or more VUV mirrors may include a reflective material, such as aluminum. The one or more VUV mirrors may have a protective coating to protect the reflective material from any detrimental reaction to the hydrogen radicals or ions. The protective coating may include a noble metal.

Abstract: A substrate holder for a lithographic apparatus has a planarization layer provided on a surface thereof. The planarization layer provides a smooth surface for the formation of an electronic component such as a thin film electronic component. The planarization layer may be provided in multiple sub layers. The planarization layer may smooth over roughness caused by removal of material from a blank to form burls on the substrate holder.

Abstract: A method for predicting yield relating to a process of manufacturing semiconductor devices on a substrate, the method including: obtaining a trained first model which translates modeled parameters into a yield parameter, the modeled parameters including: a) a geometrical parameter associated with one or more selected from: a geometric characteristic, dimension or position of a device element manufactured by the process and b) a trained free parameter; obtaining process parameter data including data regarding a process parameter characterizing the process; converting the process parameter data into values of the geometrical parameter; and predicting the yield parameter using the trained first model and the values of the geometrical parameter.

Abstract: A method of determining offsets between a plurality of data sets, each data set representing a sampling area of a pattern formed on a sample, wherein each sampling area derives from a predetermined portion of a mask pattern, the method comprising: detecting a fingerprint of the mask pattern in noise of the data sets; and determining offsets based on the fingerprint of the mask pattern.

Abstract: Described herein is a method of determining assist features for a mask pattern. The method includes obtaining (i) a target pattern comprising a plurality of target features, wherein each of the plurality of target features comprises a plurality of target edges, and (ii) a trained sequence-to-sequence machine leaning (ML) model (e.g., long short term memory, Gated Recurrent Units, etc.) configured to determine sub-resolution assist features (SRAFs) for the target pattern. For a target edge of the plurality of target edges, geometric information (e.g., length, width, distances between features, etc.) of a subset of target features surrounding the target edge is determined. Using the geometric information as input, the ML model generates SRAFs to be placed around the target edge.

Abstract: Disclosed is a method of measuring a target on a substrate using a metrology tool comprising an illumination source operable to emit an illumination beam for illuminating the target and a metrology sensor for collecting the scattered radiation having been scattered by the target. The method comprises calculating a target angle based on cell dimensions of a unit cell of said target in a first direction and a second direction orthogonal to said first direction; and order numbers of a selected pair of complementary diffraction orders in said first direction and second direction. At least one pair of measurement acquisitions is performed at a first target orientation and a second target orientation with respect to the illumination beam, wherein said target angle for at least one of said at least one pair of measurement acquisitions is an oblique angle.