Abstract: A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burls to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.

Abstract: A lithographic apparatus comprises a substrate table for accommodating a substrate; a projection system for imaging a pattern onto the substrate, and a metrology system for measuring a position of the substrate table with respect to the projection system. The metrology system comprises a metrology frame connected to the projection system, a grid positioned stationary with respect to the metrology frame, and an encoder connected to the substrate table and facing the grid for measuring the position of the substrate table relative to the grid. The metrology frame has a surface oriented towards the substrate table, and the surface has been configured, e.g., by writing or etching, so as to form the grid.

Abstract: In an immersion lithographic apparatus, a final element is disclosed having, on a surface nearest the substrate, a layer bonded to the surface and having an edge barrier, of the same material as the layer, extending from the layer away from the substrate to shield the final element from a liquid. In an embodiment, the final element is attached to the apparatus via the layer and/or edge barrier, which may be made of a material with a coefficient of thermal expansion lower than the coefficient of thermal expansion of the final element.

Abstract: Techniques for forming a target and for producing extreme ultraviolet light include releasing an initial target material toward a target location, the target material including a material that emits extreme ultraviolet (EUV) light when converted to plasma; directing a first amplified light beam toward the initial target material, the first amplified light beam having an energy sufficient to form a collection of pieces of target material from the initial target material, each of the pieces being smaller than the initial target material and being spatially distributed throughout a hemisphere shaped volume; and directing a second amplified light beam toward the collection of pieces to convert the pieces of target material to plasma that emits EUV light.

Abstract: A lithographic apparatus is disclosed that is arranged to project a pattern from a patterning device onto a substrate, the lithographic apparatus has a substrate table configured to hold a substrate. The substrate table includes a conditioning system configured to hold a conditioning fluid and to condition the substrate table. The conditioning system includes a pressure damper that is in fluid communication with the conditioning system and is arranged to dampen a pressure variation in the conditioning system.

Abstract: A method for controlling a multi-stage system includes a stator extending parallel to a first direction; a first and second stage that are moveable relative to the stator; the stages being provided with a magnet system to generate a magnetic field, and the stator being provided with coils to interact with the magnetic fields to position the stages relative to the stator, the method including: determining the position of the stages; selecting a first and a second subset of coils that are capable of having a non-negligible interaction with the magnetic field of respectively the first and the second stage; activating the coils of both subsets, wherein activating the coils includes determining the coils that are part of both subsets; and excluding a coil that is part of both subsets from activating.

Abstract: An immersion lithography apparatus comprises a temperature controller configured to adjust a temperature of a projection system, a substrate and a liquid towards a common target temperature. Controlling the temperature of these elements and reducing temperature gradients may improve imaging consistency and general lithographic performance. Measures to control the temperature may include controlling the immersion liquid flow rate and liquid temperature, for example, via a feedback circuit.

Abstract: An apparatus and method for cleaning a contaminated surface of a lithographic apparatus are provided. A liquid confinement structure comprises at least two openings used to supply and extract liquid to a gap below the structure. The direction of flow between the openings can be switched. Liquid may be supplied to the gap radially outward of an opening adapted for dual flow. Supply and extraction lines to respectively supply liquid to and extract liquid from the liquid confinement structure have an inner surface that is resistant to corrosion by an organic liquid. A corrosive cleaning fluid can be used to clean photo resist contamination.

Abstract: A vacuum system for extracting a stream of a multi-phase fluid from a photo-lithography tool comprises a pumping arrangement for drawing the fluid from the tool, and an extraction tank located upstream from the pumping arrangement for separating the fluid drawn from the tool into gas and liquid phases. The pumping arrangement comprises a first pump for extracting gas from the tank, and a second pump for extracting liquid from the tank. In order to minimize any pressure fluctuations transmitted from the vacuum system back to the fluid within the tool, a pressure control system maintains a substantially constant pressure in the tank by regulating the amounts of liquid and gas within the tank.

Abstract: The present invention relates to lithographic apparatuses and processes, and more particularly to multiple patterning lithography for printing target patterns beyond the limits of resolution of the lithographic apparatus. A method of splitting a pattern to be imaged onto a substrate via a lithographic process into a plurality of sub-patterns is disclosed, wherein the method comprises a splitting step being configured to be aware of requirements of a co-optimization between at least one of the sub-patterns and an optical setting of the lithography apparatus used for the lithographic process. Device characteristic optimization techniques, including intelligent pattern selection based on diffraction signature analysis, may be integrated into the multiple patterning process flow.

Abstract: An actuator system is disclosed having a first actuator (XP1) and a second actuator (XP2) configured to control a relative position of optical components of a lithographic apparatus. The first actuator (XP1) is configured to provide a displacement, parallel to an actuation direction, between a mounting point of a first component of the lithographic apparatus and a second component of the lithographic apparatus. The second actuator (XP2) is configured to provide a displacement parallel to the actuation direction between a reference mass (M1) associated with the second actuator (XP2) and the mounting point of the first component of the lithographic apparatus. The second actuator (XP2) may be driven such that the displacement between the second actuator (XP2) and the reference mass (M1) increases the apparent stiffness of the first actuator (XP1).

Abstract: A method of determining an overlay error. Measuring an overlay target having process-induced asymmetry. Constructing a model of the target. Modifying the model, e.g., by moving one of the structures to compensate for the asymmetry. Calculating an asymmetry-induced overlay error using the modified model. Determining an overlay error in a production target by subtracting the asymmetry-induced overlay error from a measured overlay error. In one example, the model is modified by varying asymmetry p(n?), p(n?) and the calculating an asymmetry-induced overlay error is repeated for a plurality of scatterometer measurement recipes and the step of determining an overlay error in a production target uses the calculated asymmetry-induced overlay errors to select an optimum scatterometer measurement recipe used to measure the production target.

Abstract: A substrate holder for use in a lithographic apparatus. The substrate holder comprises a main body, a plurality of burls and a heater and/or a temperature sensor. The main body has a surface. The plurality of burls project from the surface and have end surfaces to support a substrate. The heater and/or temperature sensor is provided on the main body surface. The substrate holder is configured such that when a substrate is supported on the end surfaces, a thermal conductance between the heater and/or temperature sensor and the substrate is greater than a thermal conductance between the heater and/or temperature sensor and the main body surface.

Abstract: A lithographic apparatus is disclosed that includes a support constructed to support a patterning device, the patterning device being capable of imparting a radiation beam with a pattern in its cross-section to form a patterned radiation beam and a substrate table constructed to hold a substrate. Further, the lithographic apparatus includes a projection system configured to project the patterned radiation beam onto a target portion of the substrate, the projection system being mounted to a reference element of the lithographic apparatus by a resilient mount to reduce a transfer of high frequency vibration from the reference element to the projection system and a control system to counteract a position error of the substrate table and the support relative to the projection system.

Abstract: A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process is disclosed. The method includes defining an initial H-mask and an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask and vertical critical features in the V-mask; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask.

Abstract: In a first aspect, a method of fabricating an EUV light source mirror is disclosed which may comprise the acts/steps of providing a plurality of discrete substrates; coating each substrate with a respective multilayer coating; securing the coated substrates in an arrangement wherein each coated substrate is oriented to a common focal point; and thereafter polishing at least one of the multilayer coatings. In another aspect, an optic for use with EUV light is disclosed which may comprise a substrate; a smoothing layer selected from the group of materials consisting of Si, C, Si3N4, B4C, SiC and Cr, the smoothing layer material being deposited using highly energetic deposition conditions and a multilayer dielectric coating. In another aspect, a corrosion resistant, multilayer coating for an EUV mirror may comprise alternating layers of Si and a compound material having nitrogen and a 5th period transition metal.

Abstract: A method for manufacturing a device includes providing a substrate, the substrate including a plurality of exposure fields, each exposure field including one or more target portions and at least one mark structure, the mark structure being arranged as positional mark for the exposure field; scanning and measuring the mark of each exposure field to obtain alignment information for the respective exposure field; determining an absolute position of each exposure field from the alignment information for the respective exposure field; determining a relative position of each exposure field with respect to at least one other exposure field by use of additional information on the relative parameters of the exposure field and the at least one other exposure field relative to each other; and combining the absolute positions and the determined relative positions into improved absolute positions for each of the plurality of exposure fields.

Abstract: A method of calibrating an inspection apparatus. Obtaining a surface level measurements (LS) at respective level sensing locations LS(x,y). Determining focus settings (LPA, LPB) for exposure field regions (EFA, EFB) in accordance with surface level measurements (LSA, LSB) having level sensing locations corresponding to the respective exposure field region. Exposing exposure field regions (EFA, EFB) with focus offsets (FO1, FO2) defined with reference to the respective focus settings (LPA, LPB) to produce target patterns at respective target locations. Obtaining focus-dependent property measurements, such as Critical Dimension (CD) and/or side wall angle (SWA) of the target patterns measured using the inspection apparatus; and calibrating the inspection apparatus using the focus-dependent property measurements (CD/SWA) and the respective focus offsets (FO1, FO2). The calibration uses surface level measurements (e.g., LSB(3)) having a level sensing location (e.g.

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced (2506) defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used (2508) to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked (2510) to at least partially recompose the measurement results according to the sample plan.

Abstract: A system and method are used to form features on a substrate. The system and method include using a first array including individually controllable elements that selectively pattern a beam of radiation, a second array including sets of lenses and apertures stops that form an image from a respective one of the individually controllable elements in a first plane, a third array including lenses that form an image from a respective one of the second array in a second plane, and a substrate table that holds a substrate in the second plane, such that the substrate receives the image from the respective one of the second array. A same spacing is formed between elements in the first, second, and third arrays.