Abstract: The present invention relates to a method for providing a copper seed layer on top of a barrier layer wherein said seed layer is deposited onto said barrier layer from an aqueous electroless copper plating bath comprising a water-soluble source for Cu(II) ions, a reducing agent for Cu(II) ions, at least one complexing agent for Cu(II) ions and at least one source for hydroxide ions selected from the group consisting of RbOH, CsOH and mixtures thereof. The resulting copper seed layer has a homogeneous thickness distribution and a smooth outer surface which are both desired properties.

Abstract: In a substrate like a printed circuit board comprising an insulator and a copper layer laminated on part of the insulator, said insulator outer surface and said copper layer outer surface are simultaneously subjected to a process (1) comprising treatment with an alkali metal hydroxide solution, a process (2) comprising treatment with an alkaline aqueous solution containing an aliphatic amine, a process (3) comprising treatment with an alkaline aqueous solution having a permanganate concentration of 0.3 to 3.5 wt % and a pH of 8 to 11, a process (4) comprising treatment with an acidic microemulsion aqueous solution containing a thiophene compound and an alkali metal salt of polystyrenesulphonic acid, and a process (5) comprising copper electroplating, which are implemented sequentially.

Abstract: The method for copper electroplating according to the present invention comprises an aqueous acidic copper plating bath containing a leveler additive which forms copper trenches having a cross-sectional round shape under direct current plating conditions, and at least one reverse current pulse cycle consisting of one forward current pulse and one reverse current pulse wherein the fraction of the reverse charge to the forward charge applied to the substrate in said at least one current pulse cycle ranges between 0.1 to 5%. The method is particularly suitable for simultaneously filling blind micro vias and plating trenches with a rectangular cross-sectional shape.

Abstract: The present invention relates to an activation composition for activation of silicon substrates, which is an aqueous solution comprising a source of palladium ions, a source of fluoride ions and at least two aromatic acids. The present invention further relates to a method for its use and optionally for subsequent metallization of such treated substrates. The method can be employed in semiconductor and solar cell manufacturing.

Abstract: The present invention relates to aqueous acidic plating baths for copper and copper alloy deposition in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises at least one source of copper ions, at least one acid and at least one guanidine compound. The plating bath is particularly useful for plating recessed structures with copper and build-up of copper pillar bump structures.

Abstract: A desmear module for a horizontal galvanic or wet-chemical process line for metal, in particular copper, deposition on a substrate to be treated for a removal of precipitates comprising a desmear container connectable to a desmear unit, a pump and at least a first liquid connection element for connecting said pump with the desmear unit, wherein said pump is in conjunction with said desmear unit by said at least first liquid connection element; and wherein a treatment liquid level is provided inside the desmear module, which is above an intake area of the pump; wherein the desmear module further comprises at least a first liquid area, at least an adjacent second liquid area comprising the intake area of the pump, and at least a first separating element arranged between said at least first liquid area and said at least second liquid area.

Abstract: A method is provided for metallization of substrates providing a high adhesion of the deposited metal to the substrate material and thereby forming a durable bond. The method applies novel adhesion promoting agents comprising nanometer-sized particles prior to metallization. The particles have at least one attachment group bearing a functional chemical group suitable for binding to the substrate.

Abstract: The present invention relates to additives which may be employed in electroless metal and metal alloy plating baths and a process for use of said plating baths. Such additives reduce the plating rate and increase the stability of electroless plating baths and therefore, such electroless plating baths are particularly suitable for the deposition of said metal or metal alloys into recessed structures such as trenches and vias in printed circuit boards, IC substrates and semiconductor substrates. The electroless plating baths are further useful for metallization of display applications.

Abstract: The present invention discloses a process for electroless plating of a metal or metal alloy onto copper features of an electronic device such as a printed circuit board which suppresses undesired skip plating and extraneous plating. The process comprises the steps i) providing such a substrate, ii) activating of the copper features with noble metal ions; iii) removing excessive noble metal ions or precipitates formed thereof with an aqueous pre-treatment composition comprising an acid, a source for halide ions and an additive selected from the group consisting of thiourea, thiourea derivatives and polymers comprising thiourea groups, and iv) electroless plating of a metal or metal alloy layer.

Abstract: The present invention relates to an activation composition for activation of silicon substrates, which is an aqueous solution comprising a source of palladium ions, a source of fluoride ions and at least two aromatic acids. The present invention further relates to a method for its use and optionally for subsequent metallization of such treated substrates. The method can be employed in semiconductor and solar cell manufacturing.

Abstract: Method for electroplating a metal onto a flat substrate P. Surfaces are electrically polarized for metal deposition by feeding thereto at least one first and second forward-reverse pulse current sequences. The first forward-reverse pulse current sequence includes a first forward pulse generating a first cathodic current during a first forward pulse duration tf1 and having a first forward pulse peak current if1, and a first reverse pulse generating a first anodic current during a first reverse pulse duration tr1 and having a first reverse pulse peak current ir1, the second forward-reverse pulse current sequence including a second forward pulse generating a second cathodic current during a second forward pulse duration tf2 and having a second forward pulse peak current if2, and a second reverse pulse generating a second anodic current during a second reverse pulse duration tr2, the second reverse pulse having a second reverse pulse peak current ir2.

Abstract: The present invention relates to aqueous plating bath compositions and methods for deposition of nickel and nickel alloys utilizing mixtures of stabilizing agents comprising ions of group IIIA metals and iodine containing, inorganic compounds in order to enhance bath stability.

Abstract: For improving the current transfer during the electrolytic metallization of workpieces, a method is proposed: (a) providing a metal depositing apparatus 17, in which the workpiece, at least one anode 40, 41 and a metal deposition electrolyte AE are arranged and which has a device for electric current generation 60 and at least one current feeding device 31 with in each case at least one electrical contact element 34, 35 for making electrical contact with the workpiece; (b) bringing the at least one electrical contact element 34, 35 into contact with the workpiece; and (c) feeding electric current to the workpiece via the at least one electrical contact element 34, 35 in order that the deposition metal deposits on the workpiece. Before method step (b), in a further method step (d), deposition metal is deposited on the at least one electrical contact element 34, 35.

Abstract: The present invention discloses a method for electroless plating of a metal or metal alloy onto a metal or a metal alloy structure comprising a metal such as molybdenum or titanium and alloys containing such metals. The method comprises the steps of activation, treatment in an aqueous solution comprising at least one nitrogen-containing compound or a hydroxy carboxylic acid and electroless plating of a metal or metal alloy.

Abstract: Disclosed is a chemical compound useful in a galvanic nickel or nickel alloy electroplating bath for depositing a semi-bright nickel or bright nickel alloy coating characterized in that the chemical compound has general formula IA: in which in general formula IA, R3 and R4?-CH2CH3 or R3 and R4 taken together with the N atom form a pyrrolidine ring or a morpholine ring.

Abstract: An aqueous plating bath for the electroless deposition of iron boron alloy coatings, characterized in that it comprises at least one iron ion source, at least one boron based reducing agent, at least one complexing agent, at least one pH buffer and at least one base wherein its pH value is 11 or higher and the molar ratio of the boron based reducing agents in relation to the iron ions in the aqueous plating bath is at least 6:1. Also, a process for the use of said aqueous plating bath is disclosed. The aqueous plating bath according to the invention shows good stability and plating rate and yields glossy and homogeneous iron boron alloy coatings on various substrates. It is an advantage of the plating bath that it does not require any sacrificial anodes.

Abstract: The present invention relates to a plating bath composition and a method for depositing a palladium layer by electroless plating onto a substrate. The aqueous acidic plating bath according to the present invention comprises a source for palladium ions, a reducing agent, a nitrogenated complexing agent for palladium ions and a water-soluble stabilizing agent selected from the group consisting of aromatic compounds comprising at least two residues wherein at least one residue is a hydrophilic residue and at least one residue has a negative mesomeric effect. The plating bath has an increased stability against undesired decomposition while maintaining a sufficient plating rate.

Abstract: Embodiments of the present invention relate generally to methods of treating metal surfaces to enhance adhesion or binding to substrates, and devices formed thereby. In some embodiments of the present invention, methods of achieving improved bonding strength without roughening the topography of a metal surface are provided. The metal surface obtained by this method provides strong bonding to resin layers. The bonding interface between the treated metal and the resin layer exhibits resistance to heat, moisture, and chemicals involved in post-lamination process steps, and therefore can suitably be used in the production of PCB's. Methods according to some embodiments of the present invention are especially useful in the fabrication of high density multilayer PCB's, in particular for PCB's having circuits with line/spacing of equal to and less than 10 microns.

Abstract: The present invention is related to a galvanic nickel or nickel alloy electroplating bath for depositing a semi-bright nickel or nickel alloy coating characterized in that the electroplating bath comprises at least one compound having the general formula (I) wherein R1=C1-C18 hydrocarbon moiety substituted with a SO3? group, C1-C18 hydrocarbon moiety substituted with a carboxylic group or C1-C18 hydrocarbon moiety substituted with at least an aromatic and/or a heteroaromatic group; R2=NR3R4 moiety, OR5 moiety, or cyclic NR6 moiety, wherein R3, R4, R5=hydrogen or C1-C18 hydrocarbon moiety or C1-C18 hydrocarbon moiety substituted with at least an aromatic and/or a heteroaromatic group, wherein R3, R4 and R5 are identical or different; R6=C3-C8 hydrocarbon moiety or C3-C8 hydrocarbon moiety, wherein at least one carbon atom is substituted by a heteroatom; and n=1-3.