Abstract: The present application relates to a test circuit, comprising: M test units, each test unit having a first terminal and a second terminal, a first terminal of each test unit being connected to a power wire, a second terminal of each test unit being connected to a ground wire, M being a positive integer; each test unit comprises a TDDB test component, a switch, and a control circuit; the TDDB test component has a first equivalent resistance before being broken down, the TDDB test component has a second equivalent resistance after being broken down, and the first equivalent resistance is greater than the second equivalent resistance.

Abstract: A storage system includes: a memory, configured to write or read a plurality of pieces of data during a read-write operation, the plurality of pieces of data being divided into M bytes, and each byte having N pieces of data; and an encoding circuit, configured to in the encoding stage, generate X first check codes based on the two or more pieces of data in each byte, generate Y second check codes based on all data of two or more bytes of the M bytes in the encoding stage, and generate a third check code based on the plurality of pieces of data, the X first check codes and the Y second check codes. The first check codes, the second check codes and the third check code are used to determine an error state of the plurality of pieces of data.

Abstract: Embodiments of the present application provide a method and an apparatus for adjusting metal wiring density. By detecting metal wiring density in each of metal density detection windows in a target layout, a region in which the metal wiring density is greater than a preset density threshold can be quickly positioned in the target layout, thereby improving the layout correction efficiency; then a power fill mesh in a target metal density detection window in which the metal wiring density is greater than the preset density threshold is cropped multiple times, until the metal wiring density in each of the metal density detection windows is less than or equal to the preset density threshold, such that sufficient power fill meshes are retained in the target layout while the metal wiring density of the target layout is less than or equal to the preset density threshold.

Abstract: A semiconductor structure has a first area, a second area and a third area. The second area is arranged between the first area and the third area. The semiconductor structure includes: a substrate; a shallow trench isolation structure arranged in the substrate and configured to isolate the substrate into a plurality of active areas, in which the active areas in the first area form a semiconductor device; a dielectric layer arranged on the substrate; a through hole structure arranged in the third area and penetrating through the dielectric layer and the substrate; and a stress buffer structure arranged in the second area and including a first buffer doped area, in which the first buffer doped area is arranged in the active areas and formed by doping the active areas with a first buffer impurity.

Abstract: A semiconductor structure is provided, including: a substrate and a dielectric layer arranged on the substrate; a conductive plug, wherein a first part of the conductive plug is arranged in the substrate, and a second part of the conductive plug is arranged in the dielectric layer; and an isolation ring structure at least surrounding the second part of the conductive plug.

Abstract: Embodiments of the present disclosure provide a patterning method and a semiconductor structure. The method includes: providing a substrate, wherein the substrate includes adjacent storage regions and peripheral circuit regions; forming, on the substrate, a pattern transfer layer, the pattern transfer layer having a plurality of first hard masks, wherein the first hard masks extend along a first direction and are spaced apart from each other; forming a barrier layer on the pattern transfer layer; forming, on the barrier layer, a plurality of second hard masks, the plurality of second hard masks extending along a second direction, wherein the second hard masks are spaced apart from each other, and the second hard masks are located in the storage regions and second hard masks close to the peripheral circuit regions have structural defects.

Abstract: A semiconductor structure includes a substrate, a bit line, and a first isolation layer. A groove is set in the substrate. A bottom end of the bit line is set in the groove. The first isolation layer is at least partially set on a sidewall of the bit line, and the first isolation layer is in direct contact with the bit line.

Abstract: The present application relates to the technical field of semiconductor manufacturing equipment, and provides a dust collection device. The dust collection device includes: an air inlet channel, a dust settling channel extending along a preset path, an airflow rotation channel surrounding the settling channel, an air outlet channel and a collection chamber, where one end of the airflow rotation channel is communicated with the dust settling channel, and the other end of the airflow rotation channel is communicated with the air outlet channel; an upstream end of the dust settling channel is communicated with the air inlet channel, and a downstream end of the dust settling channel is communicated with the collection chamber; and the height of the dust settling channel gradually decreases in an extension direction of the preset path.

Abstract: A base die is configured to receive first data and first encoded data in a writing phase, perform first error checking and correction processing, wherein the first encoded data is obtained by performing a first error correction code encoding processing on the first data, and transmit second data to a memory die in the writing phase, wherein the second data includes a first data after the first error checking and correction processing; the base die is further configured to receive the second data from the memory die in a reading phase, perform second error correction code encoding processing on the second data to generate second encoded data, and transmit third data in the reading phase, wherein the third data includes the second encoded data and the first data after the first error checking and correction processing.

Abstract: Embodiments of the application disclose a check tool and a check method for a Design Rule Check (DRC) rule deck of an integrated circuit layout. The check tool (100) for the DRC rule deck of the integrated circuit layout includes: an intelligent database creation engine (110), configured to generate a test case database; an intelligent arrangement engine (120), configured to generate a standard integrated circuit layout (150) according to the test case database; and an intelligent detection and analysis engine (130), configured to detect and analyze a target DRC rule deck (140) of the integrated circuit layout according to the standard integrated circuit layout (150).

Abstract: A redundant circuit assigning method includes: executing a first test item to obtain first test data including position data of fail bits acquired during execution of the first test item; determining a first redundant circuit assigning result according to the first test data, where the first redundant circuit assigning result includes a number of assigned local redundant circuits and their corresponding position data; executing a second test item to obtain second test data including position data of fail bits acquired during execution of the second test item; and determining a second redundant circuit assigning result according to the first test data and the second test data, when the fail bits acquired during the execution of the second test item include one or more fail bits beyond a repair range of the assigned local redundant circuits and assigned global redundant circuits and when assignable local redundant circuits have been assigned.

Abstract: The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first chip and a second chip. A first conductive connection wire of the first chip is connected to a first conductive contact pad, and a second conductive connection wire of the second chip is connected to a second conductive contact pad. In addition, the first conductive contact pad includes a first conductor group and a second conductor group, and the second conductive contact pad includes a third conductor group and a fourth conductor group.

Abstract: A measurement device and method for a semiconductor structure are provided. The measurement device for the semiconductor structure includes a bearing platform, a clamping mechanism, and an image acquisition system. The clamping mechanism is installed on the bearing platform and includes a clamp disposed along a vertical direction. The clamp is configured to clamp the semiconductor structure such that the semiconductor structure is clamped with a to-be-measured surface facing a side. The image acquisition system is disposed by a side of the clamping mechanism, and is configured to acquire a three-dimensional morphology of the semiconductor structure from the side.

Abstract: A semiconductor structure includes: a substrate; an insulating region located in the substrate; a first conductor located above the insulating region and configured to collect charges; a second conductor at least partially located above the insulating region and configured to induce the charges of the first conductor; and a dielectric layer located between the first conductor and the second conductor to electrically insulate the first conductor from the second conductor.

Abstract: Provided are a data presentation system, method and device, and a computer-readable storage medium. The data presentation system includes: a data collection device configured to collect multiple service system data each from a respective data source and store the service system data in a database; a data parsing device configured to obtain the multiple service system data from the database, and parse each service system data through a respective data model to obtain a data block corresponding to the respective data source; a request responding device configured to: in response to a data request sent by a client, obtain the data block matching the data request as a demanded data block; and a data sending device configured to send the demanded data block to the client to enable a display interface of the client to display the demanded data block.

Abstract: A method for manufacturing a semiconductor structure includes: a first mask layer is formed on a dielectric layer, in which a first etching hole extending along a first direction parallel to the dielectric layer is formed in the first mask layer; a side of the first mask layer away from the dielectric layer is planarized; a second mask layer is formed on the first mask layer, in which a second etching hole extending along a second direction parallel to the dielectric layer is formed in the second mask layer, the first etching hole and the second etching hole constitute an etching hole; and the dielectric layer is etched along the etching hole to form the capacitor hole.

Abstract: The present disclosure relates to the technical field of semiconductors, and provides a method and an apparatus for determining an address mapping relationship, and a storage medium. The method for determining an address mapping relationship includes: obtaining a mapping relationship table between preset addresses and DRAM physical addresses under a preset condition; and analyzing values of bit addresses in the DRAM physical address according to a first preset rule, to determine an attribute of each bit address in the DRAM physical address, where the attribute is used for representing an address field of the DRAM physical address.

Abstract: A semiconductor structure includes a substrate and a medium layer located on a first face of the substrate, the substrate has a plurality of first metal layers therein, the medium layer has a magnetic core therein, an orthographic projection of the magnetic core on the first face has a closed ring pattern, the first metal layer has a first end and a second end opposite to each other, an orthographic projection of the first end on the first face is located within a region surrounded by the closed ring pattern.

Abstract: A repair system and a repair method for a semiconductor structure, a storage medium, and an electronic device are provided. The semiconductor structure includes a main memory area and a redundant memory area. The repair system of the present disclosure includes a test circuit, a control circuit, and a repair circuit. The test circuit is configured to perform defect detection on the main memory area to determine a failed cell of the main memory area and position information of the failed cell. The control circuit is connected to the test circuit, and is configured to store the position information of the failed cell and generate a repair signal according to the position information. The repair circuit is connected to the control circuit, and is configured to receive the repair signal and perform a repair operation on the failed cell through the redundant memory area.

Abstract: Provided is a formation method of a semiconductor structure, including: providing a substrate having a first region and a second region, a plurality of discrete through holes being formed in the substrate, an arrangement density of the through holes in the first region being greater than that in the second region; forming a sacrificial layer filling the through holes; etching some thickness of the substrate around the sacrificial layer to form openings, the openings surrounding the sacrificial layer, a depth of the opening being less than a depth of the through hole in a direction perpendicular to a surface of the substrate; and removing the sacrificial layer, the openings communicating with the corresponding through holes to form trenches.