Abstract: Embodiments of the present application provide a semiconductor structure and its formation method. The method includes: the substrate being provided with a groove, a sidewall of the groove including a first sub-sidewall and a second sub-sidewall that extend upwards from a bottom of the groove sub-sidewall; blowing a first precursor to a surface of the substrate, so that the first precursor is attached to a top surface of the substrate and the second sub-sidewall; blowing a second precursor to the surface of the substrate, so that the second precursor reacts with the first precursor to form a dielectric layer; alternately blowing the first precursor and the second precursor to the surface of the substrate to form a plurality of dielectric layers until a top opening of the groove is blocked, a region enclosed by the first sub-sidewall, the dielectric layer and the bottom of the groove forming a void.

Abstract: Method for manufacturing a semiconductor device includes: forming a first area and a second area of a peripheral area on a substrate; forming a first lamination structure in the first area, and forming a second lamination structure in an array area and the second area; performing thermal treatment on the substrate so that atoms in a work function layer are diffused into a second dielectric layer, and an interface interaction occurs between the second dielectric layer and a first dielectric layer; removing the first lamination structure to the second dielectric layer, and removing the second lamination structure to the second dielectric layer; forming a fourth barrier layer and a second conductive layer, a content ratio of metallic element to non-metallic element in a first barrier layer being less than a content ratio of metallic element to non-metallic element in a second barrier layer and a third barrier layer.

Abstract: The present disclosure relates to the technical field of wafer cleaning, and in particular to a wafer cleaning device and a wafer cleaning system. The wafer cleaning device includes a liquid inlet pipe, a first liquid discharge pipe, a first valve and a liquid supply device, wherein the liquid inlet pipe has an inlet terminal and an outlet terminal; a wall of the liquid inlet pipe is protruded outward to form a protrusion, the protrusion having a cavity; one terminal of the first liquid discharge pipe is communicated with the cavity, while the other terminal thereof is communicated with a container; the first valve is arranged on the liquid inlet pipe and located between the protrusion and the outlet terminal; and, the liquid supply device is communicated with the inlet terminal of the liquid inlet pipe to import cleaning solution into the liquid inlet pipe.

Abstract: An integrated circuit structure includes a first bank group and a second bank group sharing one set of data read and write drive circuits, and the set of data read and write drive circuits includes: a read control module that is connected to a read data bus, a first read and write data bus, and a second read and write data bus, and is configured to read data of the first bank group onto the read data bus, and to read data of the second bank group onto the read data bus; and a write control module that is connected to a write data bus, the first read and write data bus, and the second read and write data bus, and is configured to write data of the write data bus into the first bank group, and to write data of the write data bus into the second bank group.

Abstract: A signal processing circuit includes a first signal latch circuit, a second signal latch circuit, and a decoder. The first signal latch circuit receives a command address signal and is driven by an even clock; the second signal latch circuit receives the command address signal and is driven by an odd clock; and the decoder is connected to the first signal latch circuit and the second signal latch circuit, and outputs a control signal. Both the even clock and the odd clock have a frequency equal to that of a reference clock, and both the even clock and the odd clock have a rising edge aligned with a rising edge of the reference clock.

Abstract: The present disclosure provides a counter circuit and a memory. The counter circuit includes: a counting circuit configured to output a count value when the count value exceeds a predetermined threshold; a decoding circuit coupled to the counting circuit, and configured to decode the count value to obtain decoding information corresponding to the count value, where the decoding information represents a numerical interval in which the count value is located; and a comparison circuit coupled to the decoding circuit, and configured to compare the decoding information with historical maximum decoding information and latch and output current maximum decoding information.

Abstract: The repair circuit is disposed in a memory including a normal memory area and a redundant memory area including a target repair unit immediately adjacent to the normal memory area, and the repair circuit being configured to control the target repair unit to repair an abnormal memory cell in the normal memory area. The repair circuit includes: a first control circuit, configured to receive signals at a target number of bits from low to high in a row address, process the received signals to obtain a control result, and output the control result, where the target number is associated with a number of Word Lines in the target repair unit; and a repair determination circuitry, connected to an output terminal of the first control circuit, and configured to receive the control result and output, in combination with the control result, a repair signal indicating whether to perform a repair operation.

Abstract: A semiconductor-machine automatic leveling apparatus includes an inclination adjusting gear, a motor, a driving gear, an inclination acquisition mechanism and a controller. The inclination adjusting gear is configured to drive one side of a tabletop of a wafer transfer machine to move up and down. The driving gear is mounted on a rotation shaft of the motor and engaged with the inclination adjusting gear. The inclination acquisition mechanism is configured to acquire inclination information of the tabletop of the wafer transfer machine and electrically connected to the controller. The controller is electrically connected to the motor and configured to control the motor to operate according to the inclination information.

Abstract: A drive circuit includes: an input stage configured to receive a first input signal and a second input signal, and to output a first output signal and a common-mode output signal, where the first input signal and the second input signal are complementary signals; an output stage configured to receive the first output signal, and to output a second output signal; and a duty cycle adjusting subcircuit configured to determine the first output signal and the common-mode output signal or a signal obtained by inverting the common-mode output signal as a control signal, and to adjust a duty cycle of the second output signal. The drive circuit determines the common-mode output signal or the signal obtained by inverting the common-mode output signal as the control signal of the duty cycle adjusting subcircuit, and adjusts the duty cycle of the second output signal to tend to a preset value.

Abstract: A data error correction circuit and a data transmission circuit are disclosed. The data error correction circuit includes: a decoding circuit having an input terminal connected to a data bus, and configured to receive first data and a check code of the first data and output an error correction code of the first data based on the check code; and an error correction latch module having a first input terminal connected to the data bus and a second input terminal connected to an output terminal of the decoding circuit, and configured to latch the first data corresponding to the error correction code and generate and output second data according to the error correction code and the corresponding first data.

Abstract: A manufacturing method of a memory includes: providing a substrate and a bit line contact layer; forming a dummy bit line structure on top of the bit line contact layer; forming a spacer layer on the sidewall of both the dummy bit line structure and the bit line contact layer; forming a dielectric layer on the sidewall of the spacer layer; forming a sacrificial layer filling the area between adjacent dummy bit line structures, wherein the sacrificial layer covers the sidewall of the dielectric layer; after the sacrificial layer is formed, removing the dummy bit line structure; forming a bit line conductive portion which fills the hole and covers the bit line contact layer; and, after the bit line conductive portion is formed, removing the spacer layer.

Abstract: A semiconductor structure includes: a first substrate, with a first opening being provided on a surface of first substrate; and a first bonding structure positioned in the first opening. The first bonding structure includes a first metal layer and a second metal layer with a melting point lower than that of the first metal layer. The first metal layer includes a first surface in contact with a bottom surface of the first opening and a second surface opposite to the first surface, the second surface is provided with a first groove, an area, not occupied by the first metal layer and the first groove, of the first opening constitutes a second groove, the second metal layer is formed in the first groove and the second groove, and a surface, exposed from the second groove, of the second metal layer constitutes a bonding surface of the first bonding structure.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The method includes: providing a substrate; forming, on the substrate, a first mask layer having a plurality of strip-shaped first patterns arranged in parallel; forming, on the first mask layer, a second mask layer having a plurality of strip-shaped second patterns arranged in parallel; forming, on the second mask layer, a third mask layer having a plurality of strip-shaped third patterns arranged in parallel, the second patterns overlap with the third patterns, and the second patterns and the third patterns are configured to sever the first patterns at predetermined positions; and performing layer-by-layer etching, using the first mask layer, the second mask layer, and the third mask layer as masks to transfer the first patterns, the second patterns, and the third patterns to the substrate to form an array of discrete active areas.

Abstract: A command decoder circuit, a memory, and an electronic device are provided. The circuit includes a first decoder unit, configured to perform decoding for a first command signal based on a dynamic clock signal; a second decoder unit, configured to perform decoding for a second command signal based on the dynamic clock signal; and the clock gate, configured to generate the dynamic clock signal after a chip select signal of the first decoder unit indicates that decoding to be started for the first command signal and before the second decoder unit has performed decoding for the second command signal, and cut off the dynamic clock signal before the chip select signal of the first decoder unit indicates that the decoding to be started for the first command signal or after the second decoder unit has performed decoding for the second command signal.

Abstract: The present application relates to a semiconductor structure and its forming method. The semiconductor structure comprises a substrate; a first transistor that includes a first channel disposed within the substrate, and a first end disposed at surface of the substrate, the first end being adapted to connect with a first-type storage cell; a second transistor that includes a second channel disposed within the substrate, and a second end disposed at surface of the substrate, the second end being adapted to connect with a second-type storage cell, the second channel having a length greater than length of the first channel. The present application enables fabrication techniques of the first transistor and the second transistor compatible. Moreover, the present application is conducive to enhancing integration density of the storage cells of the first transistor and/or the second transistor in the memory lays foundation for enlarging the fields of application of the memory.

Abstract: There are provided a method for testing failure of a memory, an apparatus for testing failure of a memory, a computer-readable storage medium, and an electronic device. The method for testing failure of a memory includes: writing preset storage data into a storage array of the memory (S310); raising a bit line voltage, and controlling a part of word lines of the storage array to enter a test mode (S320); exiting the test mode after waiting for preset time (S330); turning off sense amplifiers corresponding to a preset part of bit lines, and reading data from a remaining part of the bit lines (S340); comparing the data read from the remaining part of the bit lines with the preset storage data to obtain a comparison result (S350); and determining a failure state of the memory according to the comparison result (S360).

Abstract: A control circuit is provided, including a random module and an output module. A first input terminal of the random module receives a refresh count signal, a second input terminal receives random data, and a control terminal is connected to an output terminal of the output module. The random module processes the refresh count signal and the random data based on a row hammer refresh (RHR) signal output by the output module to obtain and output a random signal. A first input terminal of the output module receives the refresh count signal, a second input terminal is connected to an output terminal of the random module. The output module generates and outputs the RHR signal according to the random signal and the refresh count signal.

Abstract: A test program generation method, a test program generation device, a computer readable storage medium, and an electronic equipment are disclosed. The test program generation method includes: acquiring a configuration information of the memory and a test logic for the memory; determining at least one type of test program components from a preset test program component library according to the test logic; and acquiring a test program according to the configuration information by combining a plurality of test program components. Types of the plurality of test program components are included in the determined at least one type of test program components. The test program generation method not only meets different test requirements and matches different test conditions, but also avoids coding errors and improve the efficiency and accuracy in generating a memory test program.

Abstract: The present application provides a semiconductor structure and a preparation method thereof, including: a substrate; a trench; a bit line contact structure; a bit line structure; a bit line protection structure, the bit line protection structure including a top dielectric layer and a sidewall structure, the top dielectric layer is located on the bit line structure and forms a laminated structure together with the bit line structure; the sidewall structure covers part of sidewalls of the laminated structure on the substrate, the sidewall structure has a first air gap; an isolation pattern structure, the isolation pattern structure has a second air gap, the isolation pattern structure extends along a second direction, the second direction intersects with the first direction, to form capacitance contact hole between the adjacent bit line protection structures and the adjacent isolation pattern structures.

Abstract: A method for forming a semiconductor structure includes providing a semiconductor substrate, which at least includes discrete conducting layers in the semiconductor substrate; forming discretely arranged supporting structures on the semiconductor substrate, capacitor openings being included between the supporting structures; forming lower electrodes on sidewalls of the supporting structures, the lower electrodes being electrically connected with the conducting layers; forming a capacitor dielectric layer covering tops of the supporting structures, sidewalls of the lower electrodes, and bottoms of the capacitor openings; and forming an upper electrode covering the capacitor dielectric layer, to form capacitor structures.