Abstract: Embodiments provide a write operation circuit, a semiconductor memory, and a write operation method. The write operation circuit includes: a data determination module that determines whether to flip the current input data according to the previous depending on the number of changed data bits between the previous input data and the current input data of the semiconductor memory so as to generate a flip flag data and an intermediate data; a data buffer module that is used to determine an initial state of a global bus according to an enable signal and the intermediate data; and a data receiving module that receives the global bus data on the global bus, and receives the flip flag data through the flip flag signal line, and that is used to decode the global bus data according to the flip flag data, and write the decoded data into a memory block of the semiconductor.

Abstract: A circuit for detecting an anti-fuse memory cell state includes a current providing module connected to a first node and used to provide constant current; an anti-fuse memory cell array connected to the first node and including at least one bit line, the at least one bit line is connected to a plurality of anti-fuse memory cells and the first node; and a comparator, a first input end of the comparator is connected to the first node and a second input end of the comparator is connected to a first reference voltage, and used to detect a storage state of an anti-fuse memory cell to be tested in the anti-fuse memory cell array.

Abstract: A manufacturing method for memory includes providing a substrate; forming a first isolation layer on the substrate; forming a first mask layer on the first isolation layer; forming a second isolation layer on the first mask layer and part of the first isolation layer; forming a second mask layer on the second isolation layer; removing part of the second mask layer and part of the second isolation layer; removing the first mask layer and the remaining second mask layer; forming a third mask layer on the first isolation layer and the remaining second isolation layer; removing part of the third mask layer; and etching the remaining part of the second isolation layer and the first isolation layer below the second isolation layer, by taking the remaining third mask layer as a mask.

Abstract: A method for manufacturing a semiconductor device includes the following operations. A substrate is provided. Bit lines extending in a first direction are formed on the substrate. A first dielectric layer is formed on the bit lines. The first dielectric layer is etched from top to bottom to form channel holes in the first dielectric layer, in which the channel holes expose the bit lines. A channel layer is formed in each channel hole, in which the channel layer includes a first source/drain area, a channel area and a second source/drain area which are arranged from bottom to top, the first source/drain area is electrically connected to a respective one bit line. Word lines extending in a second direction are formed in the first dielectric layer.

Abstract: A method for checking a Design for Test (DFT) circuit includes: transmitting a control signal to the DFT circuit to determine test mode signals output by the DFT circuit, with the DFT circuit being configured to sequentially select multiple address latches according to the control signal to output the test mode signals; analyzing the test mode signals to determine whether the multiple address latches in the DFT circuit have an error; and outputting a simulation result report.

Abstract: Embodiments relate to a clock counter, a method for clock counting, and a storage apparatus. The clock counter includes a clock frequency-dividing circuit, a plurality of counting circuits, and an adding circuit. The clock frequency-dividing circuit receives a clock signal and divide a frequency of the clock signal to output a plurality of frequency-divided clock signals, sum of number of pulses of the plurality of frequency-divided clock signals being equal to number of pulses of the clock signal. The plurality of counting circuits are connected to the clock frequency-dividing circuit, each of the plurality of counting circuits being configured to respectively count pulses for each of the plurality of frequency-divided clock signals and generate an initial count value. The adding circuit is connected to the plurality of counting circuits, and adds up the initial count values of the plurality of counting circuits to generate a target count value.

Abstract: A test method includes: providing an initialization command to a ZQ calibration module such that the resistance value of a termination resistor is a first extreme value; providing a ZQ calibration command to the ZQ calibration module such that the resistance value of the termination resistor increases or decreases to a second extreme value from the first extreme value, one of the first extreme value and the second extreme value being a maximum value while the other one being a minimum value; acquiring a first time node, the first time node being a transmitting time for the ZQ calibration command; acquiring a second time node; and acquiring the ZQ calibration time based on the second time node and the first time node.

Abstract: Embodiment relates to a data transmission circuit. In the circuit, an encoding circuit is configured to generate check code data according to first data on a first data line; a comparison circuit is configured to compare the first data with second data on a second data line to output a comparison result indicating whether number of different bits between the first data and the second data exceeds a preset threshold; a buffer circuit is configured to transmit the first data or opposite data of the first data to the second data line according to the comparison result; the buffer circuit is also configured to transmit the check code data to the second data line; a first read-write conversion subcircuit is configured to transmit the first data or the opposite data of the first data transmitted to the second data line to a third data line according to the comparison result.

Abstract: Embodiments provide a data processing circuit and a device. The circuit includes: a first bank group 301 and a second bank group 302, a write circuit 303 including one write input buffer circuit 3031, and a write circuit 304 including one write input buffer circuit 3041. The two write circuits 303 and 304 are configured to: receive stored data from a same write bus 306 by means of the write input buffer circuits 3031 and 3041 respectively, write the stored data into the first bank group 301 by means of a first read-write bus 307, and write the stored data into the second bank group 302 by means of a second read-write bus 308. Frequencies of control signals employed by the two write input buffer circuits 3031 and 3041 both are half of a clock frequency configured for writing the stored data by the write bus 306.

Abstract: A circuit for controlling calibration includes a process circuit, an off-chip calibration circuit and a mode switching circuit. The process circuit is configured to perform, in a first test mode, a process corner test on the memory to obtain a test result signal, the test result signal being used for determining a process corner parameter. The off-chip calibration circuit is configured to receive and store a first calibration code sent by a controller, the first calibration code being determined by the controller according to a current environment parameter of the memory and the process corner parameter.

Abstract: A signal control circuit includes: a generating circuit configured to accumulate execution times of an activation operation and output a block signal in response to an accumulated value being greater than or equal to a first preset value; and a logic circuit configured to receive an activation operation signal and the block signal, block outputting of the activation operation signal in response to receiving the block signal, and output the activation operation signal in response to not receiving the block signal.

Abstract: A memory array detection circuit includes: a memory array including multiple memory cells; a write circuit, connected to the memory array and configured to write same initial data into each memory cell of the memory array; a read circuit, connected to the memory array and configured read the data stored in each memory cell of the memory array; and a data compression circuit, connected to the read circuit and configured to: compare the data read from the multiple memory cells, and detect whether the memory array is defective according to whether the read data are identical.

Abstract: A calibration control circuit includes an off-chip calibration circuit, an on-chip calibration circuit and a mode switching circuit. The off-chip calibration circuit is configured to receive and store a first calibration code sent by a user. The on-chip calibration circuit is configured to receive an enable signal and perform a ZQ self-calibration process on the memory to obtain a second calibration code adapted to a current environmental parameter when the enable signal is in an active state. The mode switching circuit is configured to receive a calibration mode signal, the first calibration code and the second calibration code, and determine the first calibration code as a ZQ calibration code when the calibration mode signal indicates an off-chip calibration mode, or, determine the second calibration code as the ZQ calibration code when the calibration mode signal indicates an on-chip calibration mode.

Abstract: In a control method for overlay accuracy, whether a similar layer of a present layer exists is determined first, where both the present layer and the similar layer are aligned relative to a same reference layer, and overlay accuracy requirements of both the present layer and the similar layer are relative to the reference layer; if so, an overlay error compensation value of a present batch of wafers at the present layer is determined according to an overlay error value of the present batch of wafers at the similar layer and/or an overlay error value of a previous batch of wafers at the similar layer; and a photoetching process is performed on the present layer of the present batch of wafers by means of the overlay error compensation value of the present batch of wafers at the present layer.

Abstract: A lead-free glass paste, a chip resistor and a method for producing the same are provided. The lead-free glass paste includes 6-7 parts by mass of borosilicate oil, 12-21 parts by mass of aluminum oxide powder, 2-3 parts by mass of glass fiber powder, and 0.1-0.5 parts by mass of a curing agent.

Abstract: A circuit and method for detecting crack damage of a die are provided. The circuit comprises: a test circuit located within a seal ring of the die for outputting a pulse detection signal; a crack detection loop arranged outside a guard ring of an internal processing circuit of the die, having an input end connected to an output end of the test circuit and an output end connected to an output pin of the die; and a relay driving unit arranged between the input end and output end for increasing a capability of transmission of the pulse detection signal, wherein the seal ring surrounds the whole die; in a test mode, the test circuit outputs the pulse detection signal to the crack detection loop, and a test machine determines whether the die is damaged by a crack by reading a signal on the output pin of the die.

Abstract: A memory includes: a substrate, having a plurality of active regions arranged in an array and a plurality of word lines extending in a first direction, the active regions being inclined at a preset angle to the word lines, the active region having at least one access transistor; a plurality of bit lines, extending in a second direction perpendicular to the first direction; magnetic tunnel junctions, one end of the magnetic tunnel junction is electrically connected to one of bit lines and another end of the magnetic tunnel junction is electrically connected to two access transistors, the two access transistors electrically connected to the magnetic tunnel junction being located in two adjacent active regions, respectively.

Abstract: Embodiments provide a write operation circuit, a semiconductor memory, and a write operation method. The write operation circuit includes a serial-to-parallel conversion circuit, a data buffer, a DBI decoder, and a precharge module. The serial-to-parallel conversion circuit performs serial-to-parallel conversion on first DBI data of a DBI port to generate second DBI data for transmission via a DBI signal line and generates input data of the data buffer according to the second DBI data and input data of a DQ port. The data buffer determines, according to the input data of the data buffer, whether to invert the global bus. The DBI decoder receives the second DBI data, decodes the global bus data and writes the decoded global bus data into the memory bank, where the decoding comprises determining whether to invert the global bus data. The precharge module sets an initial state of the global bus to Low.

Abstract: The present disclosure relates to a latch circuit and a latch method, and an electronic device, and relates to the technical field of integrated circuits. The latch circuit includes: a transmission module, a latch module, and a control module, wherein the transmission module is configured to transmit an input signal to the latch module; the latch module is configured to latch the input signal or output the input signal when a set signal or a reset signal is at a low level; and the control module is configured to perform control, such that a current leakage path cannot be formed between the transmission module and the latch module when the set signal or the reset signal is at a high level.

Abstract: A semiconductor structure includes a substrate and multiple word lines located on a top surface of the substrate. Each of the word lines extends in a direction parallel to the top surface of the substrate. The multiple word lines are arranged at intervals in a direction perpendicular to the top surface of the substrate. Any two adjacent word lines are at least partially staggered with respect to one another in the direction perpendicular to the top surface of the substrate.