Abstract: A staggering signal generation circuit includes a pulse generation circuit, a counting circuit and a signal generation circuit. The pulse generation circuit generates a first periodic pulse signal and a second periodic pulse signal; the counting circuit counts the first periodic pulse signal and the second periodic pulse signal to generate rising edge triggering signals and falling edge triggering signals; and the signal generation circuit generate a staggering pulse signal according to the input rising edge triggering signals and the input falling edge triggering signals.

Abstract: A semiconductor structure includes: a substrate, a first gate structure, and a second gate structure. The substrate includes: discrete first semiconductor pillars arranged at a top of the substrate and extending in a vertical direction; and a second semiconductor pillar and a third semiconductor pillar extending in the vertical direction, the second and third semiconductor pillars are provided at a top of each first semiconductor pillar. The first gate structure is arranged in a middle region of the first semiconductor pillar and surrounds the first semiconductor pillar. The second gate structure is arranged in a middle region of the second semiconductor pillar and of the third semiconductor pillar, and includes a first ring structure and a second ring structure. The first ring structure surrounds the second semiconductor pillar, and the second ring structure surrounds the third semiconductor pillar.

Abstract: A method of manufacturing a semiconductor structure includes: providing a base and a dielectric layer on the base, the base in an array region being provided with discrete capacitive contact plugs and a first conductive layer being formed on a top surface of the capacitive contact plugs; sequentially forming a conversion layer and a target layer on the first conductive layer and the dielectric layer, the target layer in the array region and the first circuit region being provided with first openings through the target layer; patterning the target layer in the array region as well as in the first circuit region and the second circuit region to form a second opening and a third opening; etching the conversion layer to form a first trench; forming a filling layer filling the first trench and removing the conversion layer to form a second trench filled by a second conductive layer.

Abstract: A semiconductor test structure includes a field-effect transistor and a metal connection structure. The field-effect transistor includes a substrate with first doping type, a gate located on a surface of the substrate, and a source region with a second doping type and a drain region with the second doping type in the substrate, the source region and the drain region are located on two sides of the gate, respectively. The metal connection structure is connected with the gate; the metal connection structure forms a Schottky contact with the substrate.

Abstract: A semiconductor structure includes a base in which a first doped region is provided and an active pillar group arranged in the first doped region. The active pillar group includes four active pillars arranged in an array. At least one of the active pillars is provided with a notch, which faces at least one of a row centerline or a column centerline of the active pillar group.

Abstract: Embodiments of the disclosure provide a semiconductor structure and a method for forming the same. The method includes: providing a semiconductor substrate including a plurality of active pillars arranged at intervals; etching the active pillar to form an annular groove, in which the annular groove does not expose a top surface and a bottom surface of the active pillar; and forming a first semiconductor layer in the annular groove to form the semiconductor structure; in which a band gap of the first semiconductor layer is smaller than a band gap of the active pillar.

Abstract: A test method and a test system are provided. The method includes that: first initial data is written into the storage module; ECC module encodes and generates first check data corresponding to first initial data based on first initial data, and writes first check data into the storage module; second initial data is written into a same address of the storage module; second initial data and first check data in the storage module are read. ECC module encodes and generates second check data corresponding to second initial data based on second initial data, and checks and corrects second initial data based on the first check data and the second check data; first read data of the memory is read, and whether a function of ECC module is abnormal is determined based on the first read data, the first read data is checked and corrected second initial data.

Abstract: Embodiments of the disclosure provide a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes a substrate, a first isolation trench located in the substrate, a first insulating layer covering a bottom surface and a lower part of a sidewall of the first isolation trench, a second insulating layer covering an upper part of the sidewall of the first isolation trench, and a third insulating layer at least partially located between the first insulating layer and the second insulating layer to isolate the first insulating layer from the second insulating layer.

Abstract: A method for manufacturing a semiconductor structure includes the following operations. A base and a dielectric layer arranged on the base are provided. A first conductive pillar, a second conductive pillar and a third conductive pillar arranged in the dielectric layer are formed. A mask layer is formed. A portion of a thickness of the third conductive pillar is etched by using the third mask layer as a mask to form a third lower conductive pillar and a third upper conductive pillar stacked on one another, in which the third upper conductive pillar, the third lower conductive pillar and the dielectric layer are configured to form at least one groove. A cover layer filling the at least one groove is formed, in which the cover layer exposes the top surface of the third upper conductive pillar.

Abstract: A compilation method includes: receiving a signal to be compiled and a working frequency signal; performing compilation processing on the signal to be compiled to obtain a compilation result signal; and if the signal to be compiled is a reserved code, performing compatibility selection processing on the compilation result signal based on the working frequency signal to determine a first compilation value.

Abstract: An anti-fuse circuit includes the following: a first transistor, and at least one parasitic transistor and at least one parasitic triode that are connected to the first transistor. The at least one parasitic transistor and the at least one parasitic triode are connected to a first node.

Abstract: Embodiments of the present invention provide a method for manufacturing a semiconductor structure, which includes: a base is provided and a stack layer is formed on the base, wherein the stack layer includes at least a first sacrificial layer, and a material of the first sacrificial layer includes an amorphous elemental semiconductor material; second hard mask patterns are formed on the first sacrificial layer through a self-aligned process; a doping process is performed, which includes the operation that a region of the first sacrificial layer exposed from gaps between the second hard mask patterns is doped; the second hard mask patterns are removed; and an undoped region of the first sacrificial layer is removed through a selective etching process so as to form first sacrificial patterns.

Abstract: A circuit simulation method includes the following: a key character string corresponding to at least one target power supply node is determined; a node identifier corresponding to the at least one target power supply node is searched out from a first netlist corresponding to the to-be-simulated circuit according to the key character string; and a power supply voltage file corresponding to the at least one target power supply node is generated according to the searched-out node identifier, and the to-be-simulated circuit is simulated according to the power supply voltage file. The circuit simulation method and the device provided by the embodiments of the present disclosure may rapidly generate the power supply voltage file corresponding to the target power supply node, which can not only effectively improve the circuit simulation efficiency, but also ensure the accuracy of a simulation result.

Abstract: A semiconductor structure includes a plurality memory group provided in rows, each of the memory groups includes a plurality of memories arranged at intervals along a row direction, and for two adjacent ones of the memory groups, the memories in one memory group and the memories in another memory group are staggered.

Abstract: A gate valve device includes a cleaning component, a first lifting component, and a second lifting component. The cleaning component is arranged on the second lifting component. The first lifting component is configured to control whether an opening on a side of a vacuum chamber close to a swing gate valve is in a closed state. The second lifting component is configured to, in a case that the opening on the side of the vacuum chamber close to the swing gate valve is in the closed state, control the cleaning component to clean the swing gate valve.

Abstract: A semiconductor structure includes a base, a dielectric layer, a gate structure, and a covering layer. The base includes discrete semiconductor pillars. The semiconductor pillars are disposed at the top of the base and extend in a vertical direction. The dielectric layer covers the sidewall of the semiconductor pillar. The gate structure is disposed in the middle area of the semiconductor pillar. The gate structure includes a gate-all-around structure, the gate-all-around surrounding the semiconductor pillar. A first part of the dielectric layer is disposed between the gate structures and the semiconductor pillars. The covering layer covers the top of the semiconductor pillar and part of the sidewall close to the top. The material of the covering layer includes a boron-containing compound.

Abstract: A test structure includes a plurality of word lines and a plurality of bit lines. A vertical gate-all-around (VGAA) transistor is formed at the intersection of each word line and each bit line. The test structure includes a first area and a second area. The second area is arranged outside the first area, the word lines in the first area and the word lines in the second area are disconnected, and the bit lines in the first area and the bit lines in the second area are disconnected. The plurality of VGAA transistors located in the first area form a test array, and a VGAA transistor located in the middle of the test array is a device to be tested.

Abstract: Embodiments of the disclosure relate to the field of semiconductor technologies, and provide a layout and a wiring method, a comparison method, a fabrication method, a device, and a storage medium. The layout wiring method includes: obtaining names of all ports in a layout, each port has a first node and a second node; detecting whether the first node and the second node of each port are each connected to any other port through an actual connection layer, and if not, taking a port of which the first node and/or the second node are not connected to the actual connection layer as a port to be connected; and connecting at least two ports to be connected having the same name using a virtual connection layer.

Abstract: A method for manufacturing a semiconductor structure includes the following: providing a substrate; forming a semiconductor layer on the substrate; performing P-type doping on the semiconductor layer to transform the semiconductor layer into an initial mask layer; performing a first patterning treatment on the initial mask layer to form a mask layer having an opening; and performing a second patterning on the substrate by taking the mask layer as a mask and using an etching process. An etching rate of the substrate is greater than an etching rate of the mask layer during the etching process.

Abstract: A semiconductor structure includes a substrate, and a plurality of first semiconductor columns, a storage structure, a plurality of transistors and a first protective layer located above the substrate. The plurality of first semiconductor columns are arranged in array in first and second directions. Each first semiconductor column includes a first part and a second part located on same. The second part includes a bottom portion, an intermediate portion and a top portion. The first direction and the second direction intersect with each other and are both parallel to top surface of the substrate. The storage structure surrounds sidewalls of the first parts. The first protective layer surrounds sidewalls of the top portions of the second parts. A channel structure of each transistor is located in the intermediate portion of the second part, and an extending direction of the channel structure is the same as that of the second part.