Abstract: A slit pattern, which is an orientation control element extending in an oblique direction relative to an edge of a pixel electrode on a surface of a TFT substrate, is formed in the pixel electrode to extend in a substantially parallel direction to an extending direction of a bank-shaped pattern. Furthermore, as an orientation control element, fine slit patterns (concave portions in the pixel electrode) are formed locally in a part near the edge of the pixel electrode except in the pixel electrode to extend in an oblique direction relative to an extending direction of the edge.

Abstract: A slit pattern, which is an orientation control element extending in an oblique direction relative to an edge of a pixel electrode on a surface of a TFT substrate, is formed in the pixel electrode to extend in a substantially parallel direction to an extending direction of a bank-shaped pattern. Furthermore, as an orientation control element, fine slit patterns (concave portions in the pixel electrode) are formed locally in a part near the edge of the pixel electrode except in the pixel electrode to extend in an oblique direction relative to an extending direction of the edge.

Abstract: In the fabrication of a CMOS-TFT, non-selectively doping (for both of p- and n-type TFTS) and selectively doping (only for the n-type TFT) with p-type impurities (B: boron) are successively performed at very low concentrations to control the threshold voltages (Vthp and Vthn). More specifically, the Id-Vg characteristics of the p- and n-type TFTs are initially negatively shifted. In this state, non-selectively doping is performed positively to shift the p- and n-type TFTs first to adjust the Vthp to a specified value. Selectively doping is then performed/positively to shift only the n-type TFT to adjust the Vthn to a specified value. The threshold voltages of the p- and n-type TFTs constructing the CMOS-TFT can be independently and efficiently (with minimum photolithography) controlled with high accuracy.

Abstract: A slit pattern, which is an orientation control element extending in an oblique direction relative to an edge of a pixel electrode on a surface of a TFT substrate, is formed in the pixel electrode to extend in a substantially parallel direction to an extending direction of a bank-shaped pattern. Furthermore, as an orientation control element, fine slit patterns (concave portions in the pixel electrode) are formed locally in a part near the edge of the pixel electrode except in the pixel electrode to extend in an oblique direction relative to an extending direction of the edge.

Abstract: A slit pattern, which is an orientation control element extending in an oblique direction relative to an edge of a pixel electrode on a surface of a TFT substrate, is formed in the pixel electrode to extend in a substantially parallel direction to an extending direction of a bank-shaped pattern. Furthermore, as an orientation control element, fine slit patterns (concave portions in the pixel electrode) are formed locally in a part near the edge of the pixel electrode except in the pixel electrode to extend in an oblique direction relative to an extending direction of the edge.

Abstract: Optical devices fabricated from solvent processible polymers suffer from susceptibility to solvents and morphological changes. A semiconductive polymer capable of luminescence in an optical device is provided. The polymer comprises a luminescent film-forming solvent processible polymer which contains cross-linking so as to increase its molar mass and to resist solvent dissolution, the cross-linking being such that the polymer retains semiconductive and luminescent properties.

Abstract: LDD regions can be properly formed even when a gate insulation film is thin, and an impurity can be properly activated. After forming a gate electrode, an n-type impurity is implanted in a high density using a resist mask for etching the gate insulation film as a mask. A SiO2 film is formed as a first interlayer insulation film, and activation is thereafter performed using a laser. By implanting the impurity with the resist mask for etching left in place, the problem of excessive implantation of the n-type impurity in the LDD regions can be avoided without adding a photolithographic process even when the gate insulation film is thin.

Abstract: There is provided a light source device, used in a display device and the like, having a high light emitting efficiency. The light source device has an electric discharge tube containing mercury and electrodes at both ends. A heat conducting member is attached to and is in contact with a part of the electric discharge tube. The heat conducting member locally cools the tube. The heat conducting member and the tube satisfy the following relationship, 6×10−5/S<(1/k1−1/k2)W, where a cross sectional area of the electric discharge tube is S (m2), an amount of generate heat per unit length of the electric discharge tubes is W (W), heat conductivity of the non-cooling part is k1 (W/K/m), and heat conductivity of the cooling part is defined as k2 (W/K/m).

Abstract: An opto-electrical device comprising an anode electrode, a cathode electrode, and an opto-electrically active region located between the electrodes, the cathode electrode including a first layer comprising a compound of a group 1, group 2 or transition metal, a second layer comprising a material having a work function below 3.5 eV, and a third layer spaced from the opto-electrically active region by the first and second layers and having a work function above 3.5 eV.

Abstract: In a vertically aligned liquid crystal display device for controlling liquid crystal molecules alignment in voltage application by providing linear structures or linear slits consisting of a plurality of constituent units to at least one of a pair of substrates having an electrode thereon, there is provided alignment controlling means for forming an alignment singular point s=−1 of liquid crystal molecules at an intersecting point between the structures on the pixel electrode or the slits in the electrode and an edge of a pixel electrode on one of the substrates.

Abstract: A TFT matrix-type liquid crystal display device is used in laptop personal computers and wall TVs. On a transparent insulating substrate 10 there are formed gate bus lines 14 for commonly connecting the gates of thin film transistors, drain bus lines 16 for commonly connecting the drains of the thin film transistors, and outside terminals 20 and outside terminals 30 opposed respectively to the ends of the gate bus lines and the drain bus lines 16, opposed respectively to the ends of the gate bus lines and the drain bus lines. Gate connection lines 24 for commonly connecting the gate bus lines 14 and drain connection lines 34 for commonly connecting the drain bus lines are formed in regions inner of the outside terminals 20, 30. The thin film transistor matrix device can be fabricated without occurrence of short circuit defects, with little characteristic change and with high yields.

Abstract: The invention relates to a TFT device, a method of manufacturing the same, and a TFT substrate and a display having the same and provides a TFT device having good characteristics and high reliability, a method of manufacturing the same, and a TFT substrate and a display having the same. A metal thin film is formed on a gate insulation film. Patterning is performed to remove the metal thin film on a semiconductor layer to become source and drain regions of an n-type TFT. Phosphorous ions are implanted using the patterned metal thin film as a mask to form the source and drain regions. The patterned metal thin film is further patterned to form a gate electrode of the n-type TFT. Phosphorous ions are implanted using the gate electrode as a mask to form LDD regions between the source and drain regions and a channel region.

Abstract: A thin-film transistor of a liquid crystal display device includes an ohmic electrode such that the ohmic electrode is formed of a first conductor film of a refractory metal element defined by a first lateral edge and a second conductor film containing Al and defined by a second lateral edge, wherein the second lateral edge is receded with respect to the first lateral edge when viewed in a direction perpendicular to a substrate on which the thin-film transistor is formed.

Abstract: A drive control circuit supplies a gate voltage so that display quality is not degraded even in a case where a vertical scanning frequency or a horizontal scanning frequency is changed. The circuit includes a timing controller for detecting a change of a horizontal scanning frequency, a gate voltage generating circuit for generating two kinds of gate-on voltages Va and Vb (Va<Vb), and a switch for outputting one of the gate-on voltages Va and Vb from the gate voltage generating circuit in accordance with an output of the timing controller. The timing controller includes a counter for counting the number of clocks for one horizontal period, and a comparator for comparing a count result with a threshold value. When the horizontal scanning frequency is in a normal state, the low gate-on voltage Va is outputted, and when the horizontal scanning frequency exceeds a predetermined threshold value, that is, the count value falls below a threshold value, the high gate-on voltage Vb is outputted.

Abstract: In a manufacturing process of a display device, hydrogenation in an I layer of photodiodes D1 and D2 is progressed less than that in a channel portion of a pixel TFT, and a defect density due to dangling bonds not terminated in the I layer of the photodiodes D1 and D2 is made higher than a defect density in the channel portion of the pixel TFT. Thus, while suppressing a leakage current of the pixel TFT, the sensitivity of the photodiodes D1 and D2 to light is improved. Moreover, a gate electrode is provided above an i region of a pin-type optical sensor diode with an insulating film interposed therebetween. Thus, a gate voltage can control a threshold of a bias voltage when a current starts to flow into the optical sensor diode and a leakage current is prevented from flowing into the optical sensor diode.

Abstract: A plurality of main seal patterns and dummy seal patterns are formed by a sealant on one of substrates. The plurality of main seal patterns individually enclose each of a plurality of display areas. The dummy seal patterns individually enclose the plurality of main seal patterns, and sides of the dummy seal patterns facing sides of the one substrate are all interconnected. These formations enable constant vacuum levels to be maintained the inside and the outside of the main seal patterns when the inside of a chamber of an assembling device is recovered to atmospheric pressure. Therefore, distortion of substrates is impeded in the vicinity of the main seal patterns, and degradation of display quality can be prevented.

Abstract: A lighting unit and a liquid crystal display device which can improve the efficiency of usable light. The lighting unit includes a light source, a light guide plate, and a truncated pyramid located between the light guide plate and the light source. The truncated pyramid has a base, a top smaller than the base, and a slope linking the base and the top. The light source is placed in close contact with the top of the truncated pyramid, and the light guide plate is placed in close contact with the base of the truncated pyramid. Light is propagated from a light emitting part of the light source to the light guide plate without passing through any air layer. Also, an unnecessary light removing structure is provided in the light guide plate near the incidence surface thereof.

Abstract: A conduction inhibitor including an epoxy resin or the like is mixed into a liquid crystal material. Specifically, the conduction inhibitor is formed by a bisphenol F epoxy resin, and mixing proportion is set to 0.1 wt % to 10 wt %. When such a conduction inhibitor is mixed, electrical conduction caused by ions due to an impurity or the like existing in the liquid crystal material can be suppressed, thereby maintaining a voltage holding ratio high when a liquid crystal display cell and a liquid crystal display are structured by using the liquid crystal material.

Abstract: A display device comprising an array of light-emissive pixels, each pixel comprising red, green and blue light emitters and at least one further light emitter for emitting a color to which the human eye is more sensitive than the emission color of at least one of the red and blue emitters.

Abstract: The present invention relates to a liquid crystal display provided with an electrostatic protection element and an object of the present invention is to provide the liquid crystal display provided with superior redundancy and at the same time a sufficient protection function against static electricity in which relatively low voltage generates for a long period of time.