Patents Assigned to Enthone Inc.
  • ELECTROLYTE AND PROCESS FOR DEPOSITING A MATT METAL LAYER
    Publication number: 20080302668
    Abstract: An electrolytic composition for the deposition of a matt metal layer onto a substrate and deposition process where the composition comprises a source of metal from the group consisting of Cr, Mn, Fe, Co, Ni, Cu, Zn, Ru, Rh, Pd, Ag, In, Sn, Sb, Re, Pt, Au, Bi, and combinations thereof; a substituted or unsubstituted polyalkylene oxide or its derivative as an emulsion and/or dispersion former; and a compound comprising fluorated or perfluorated hydrophobic chains or which is a polyalkylene oxide substituted quaternary ammonium compound as wetting agent; wherein the electrolytic composition forms a microemulsion and/or dispersion.
    Type: Application
    Filed: July 7, 2008
    Publication date: December 11, 2008
    Applicant: ENTHONE INC.
    Inventors: Andreas Konigshofen, Danica Elbick, Christoph Werner, Wolfgang Clauberg, Peter Pies, Andreas Mobius
  • METALLIC SURFACE ENHANCEMENT
    Publication number: 20080261025
    Abstract: A method and composition for enhancing corrosion resistance, wear resistance, and contact resistance of a device comprising a copper or copper alloy substrate and at least one metal-based layer on a surface of the substrate. The composition comprises a phosphorus oxide compound selected from the group consisting of a phosphonic acid, a phosphonate salt, a phosphonate ester, a phosphoric acid, a phosphate salt, a phosphate ester, and mixtures thereof; an aromatic heterocycle comprising nitrogen; and a solvent having a surface tension less than about 50 dynes/cm as measured at 25° C.
    Type: Application
    Filed: April 18, 2007
    Publication date: October 23, 2008
    Applicant: ENTHONE INC.
    Inventors: Joseph A. Abys, Shenliang Sun, Chonglun Fan, Edward J. Kudrak
  • SELF-INITIATED ALKALINE METAL ION FREE ELECTROLESS DEPOSITION COMPOSITION FOR THIN CO-BASED AND NI-BASED ALLOYS
    Publication number: 20080254205
    Abstract: A method and composition for electrolessly depositing a layer of a metal alloy onto a surface of a metal substrate in manufacture of microelectronic devices. The composition comprises a source of metal deposition ions, a borane-based reducing agent, and a two-component stabilizer, wherein the first stabilizer component is a source of hypophosphite and the second stabilizer component is a molybdenum (VI) compound.
    Type: Application
    Filed: April 13, 2007
    Publication date: October 16, 2008
    Applicant: ENTHONE INC.
    Inventors: Nicolai Petrov, Charles Valverde, Qingyun Chen, Richard Hurtubise
  • COBALT CAPPING SURFACE PREPARATION IN MICROELECTRONICS MANUFACTURE
    Publication number: 20080236619
    Abstract: Cleaning compositions and methods in connection with cobalt-based capping of interconnects in integrated circuit semiconductor devices.
    Type: Application
    Filed: April 2, 2008
    Publication date: October 2, 2008
    Applicant: ENTHONE INC.
    Inventors: Qingyun Chen, Vincent Paneccasio, Xuan Lin, Richard Hurtubise
  • Defectivity and process control of electroless deposition in microelectronics applications
    Patent number: 7410899
    Abstract: Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.
    Type: Grant
    Filed: September 20, 2005
    Date of Patent: August 12, 2008
    Assignee: Enthone, Inc.
    Inventors: Qingyun Chen, Charles Valverde, Vincent Paneccasio, Nicolai Petrov, Daniel Stritch, Christian Witt, Richard Hurtubise
  • ORGANIC SOLDERABILITY PRESERVATIVE COMPRISING HIGH BOILING TEMPERATURE ALCOHOL
    Publication number: 20080163787
    Abstract: An organic solderability preservative (OSP) composition comprising an alkyl cyclic alcohol and an azole compound having enhanced composition stability against crystallization of the azole compound.
    Type: Application
    Filed: January 8, 2007
    Publication date: July 10, 2008
    Applicant: ENTHONE INC.
    Inventors: Joseph A. Abys, Shenliang Sun
  • Capping of metal interconnects in integrated circuit electronic devices
    Patent number: 7393781
    Abstract: A multilayer metal cap over a metal-filled interconnect feature in a dielectric layer for incorporation into a multilayer integrated circuit device, and a method for forming the cap.
    Type: Grant
    Filed: September 10, 2007
    Date of Patent: July 1, 2008
    Assignee: Enthone Inc.
    Inventors: Eric Yakobson, Richard Hurtubise, Christian Witt, Qingyun Chen
  • DEFECT REDUCTION IN ELECTRODEPOSITED COPPER FOR SEMICONDUCTOR APPLICATIONS
    Publication number: 20080121527
    Abstract: A method for electroplating a copper deposit onto a semiconductor integrated circuit device substrate having submicron-sized features, and a concentrate for forming a corresponding electroplating bath. A substrate is immersed into an electroplating bath formed from the concentrate including ionic copper and an effective amount of a defect reducing agent, and electroplating the copper deposit from the bath onto the substrate to fill the submicron-sized reliefs. The occurrence of protrusion defects from superfilling, surface roughness, and voiding due to uneven growth are reduced, and macro-scale planarity across the wafer is improved.
    Type: Application
    Filed: January 8, 2008
    Publication date: May 29, 2008
    Applicant: ENTHONE INC.
    Inventors: John Commander, Richard Hurtubise, Vincent Paneccasio, Xuan Lin, Kshama Jirage
  • METHOD AND COMPOSITION FOR DIRECT METALLIZATION OF NON-CONDUCTIVE SUBSTRATES
    Publication number: 20080116076
    Abstract: The present invention relates to a method for the metallization of an electrically non-conductive substrate using a thiosulfate conductor which employs a thiosulfate-containing conductor solution further comprising an alkali metal ion selected from the group consisting of lithium, potassium, rubidium, caesium, and combinations thereof.
    Type: Application
    Filed: February 8, 2007
    Publication date: May 22, 2008
    Applicant: Enthone Inc.
    Inventors: Andreas Konigshofen, Corinna Kesseler
  • Electrolyte Composition and Method for the Deposition of a Zinc-Nickel Alloy Layer on a Cast Iron Or Steel Substrate
    Publication number: 20080110762
    Abstract: The present invention relates to an electrolyte composition as well as a method for the deposition of zinc-nickel alloy layers on substrates, in particular cast iron or steel substrates. The electrolyte compositions according to the invention comprise aminoacetic acid. The alloy layers deposited from the electrolyte compositions according to the invention are corrosion resistant and bright and nearly have no internal tension.
    Type: Application
    Filed: July 13, 2007
    Publication date: May 15, 2008
    Applicant: Enthone Inc.
    Inventors: Dieter Gollan, Gerard Patron, Thomas Helden, Andreas Heinz Kirchhof
  • MANUFACTURE OF ELECTROLESS COBALT DEPOSITION COMPOSITIONS FOR MICROELECTRONICS APPLICATIONS
    Publication number: 20080090414
    Abstract: A method of preparing an aqueous electroless deposition composition for electrolessly depositing Co or a Co alloy onto a substrate in manufacture of microelectronic devices by treating water or an aqueous electroless deposition composition with a deoxygenating treatment to reduce the oxygen concentration.
    Type: Application
    Filed: October 16, 2006
    Publication date: April 17, 2008
    Applicant: Enthone Inc.
    Inventors: Qingyun Chen, Richard Hurtubise, Vincent Paneccasio, Charles Valverde, Daniel Stritch
  • Cobalt and nickel electroless plating in microelectronic devices
    Patent number: 7332193
    Abstract: An electroless plating method and composition for depositing Co, Ni, or alloys thereof onto a metal-based substrate in manufacture of microelectronic devices, involving a source of deposition ions selected from the group consisting of Co ions and Ni ions, a reducing agent for reducing the depositions ions to metal onto the substrate, and a hydrazine-based leveling agent.
    Type: Grant
    Filed: March 21, 2005
    Date of Patent: February 19, 2008
    Assignee: Enthone, Inc.
    Inventors: Charles Valverde, Nicolai Petrov, Eric Yakobson, Qingyun Chen, Vincent Paneccasio, Jr., Richard Hurtubise, Christian Witt
  • Defect reduction in electrodeposited copper for semiconductor applications
    Patent number: 7316772
    Abstract: A method for electroplating a copper deposit onto a semiconductor integrated circuit device substrate having submicron-sized features, and a concentrate for forming a corresponding electroplating bath. A substrate is immersed into an electroplating bath formed from the concentrate including ionic copper and an effective amount of a defect reducing agent, and electroplating the copper deposit from the bath onto the substrate to fill the submicron-sized reliefs. The occurrence of protrusion defects from superfilling, surface roughness, and voiding due to uneven growth are reduced, and macro-scale planarity across the wafer is improved.
    Type: Grant
    Filed: March 5, 2002
    Date of Patent: January 8, 2008
    Assignee: Enthone Inc.
    Inventors: John Commander, Richard Hurtubise, Vincent Paneccasio, Xuan Lin, Kshama Jirage
  • CAPPING OF METAL INTERCONNECTS IN INTEGRATED CIRCUIT ELECTRONIC DEVICES
    Publication number: 20070298609
    Abstract: A multilayer metal cap over a metal-filled interconnect feature in a dielectric layer for incorporation into a multilayer integrated circuit device, and a method for forming the cap.
    Type: Application
    Filed: September 10, 2007
    Publication date: December 27, 2007
    Applicant: ENTHONE INC.
    Inventors: Eric Yakobson, Richard Hurtubise, Christian Witt, Qingyun Chen
  • DIRECT METALLIZATION OF ELECTRICALLY NON-CONDUCTIVE POLYIMIDE SUBSTRATE SURFACES
    Publication number: 20070298170
    Abstract: The present invention relates to an improved method for the direct metallization of non-conductive substrate surfaces, in particular polyimide surfaces, that is characterized by the process steps of etching the substrate surface with an acidic etching solution that contains peroxide; contacting the etched substrate surface with an acidic treatment solution that contains permanganate; activating the treated substrate surface in an acidic activation solution that contains peroxide; contacting the activated substrate surface with an acidic catalytic solution that contains at least a thiophene derivate and at least a sulfonic acid derivate; metallization of the thus treated substrate surface in an acidic galvanic metallization bath.
    Type: Application
    Filed: May 31, 2007
    Publication date: December 27, 2007
    Applicant: ENTHONE INC.
    Inventors: Walter Kronenberg, Jurgen Hupe
  • COPPER ELECTRODEPOSITION IN MICROELECTRONICS
    Publication number: 20070289875
    Abstract: An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.
    Type: Application
    Filed: August 28, 2007
    Publication date: December 20, 2007
    Applicant: ENTHONE INC.
    Inventors: Vincent Paneccasio, Xuan Lin, Paul Figura, Richard Hurtubise
  • Copper electrodeposition in microelectronics
    Patent number: 7303992
    Abstract: An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.
    Type: Grant
    Filed: November 14, 2005
    Date of Patent: December 4, 2007
    Assignee: Enthone Inc.
    Inventors: Vincent Paneccasio, Xuan Lin, Paul Figura, Richard Hurtubise
  • ADHESION PROMOTION IN PRINTED CIRCUIT BOARDS
    Publication number: 20070227625
    Abstract: An adhesion promotion process and composition for enhancing adhesion between a copper conducting layer and a dielectric material during manufacture of a printed circuit board. The composition contains a corrosion inhibitor, an inorganic acid, and an alcohol which is effective to increase copper-loading in the composition.
    Type: Application
    Filed: June 7, 2007
    Publication date: October 4, 2007
    Applicant: ENTHONE, INC.
    Inventors: Abayomi Owei, Hiep Nguyen, Eric Yakobson
  • ADHESION PROMOTION IN PRINTED CIRCUIT BOARDS
    Publication number: 20070228333
    Abstract: An adhesion promotion process and composition for enhancing adhesion between a copper conducting layer and a dielectric material during manufacture of a printed circuit board. The composition contains a corrosion inhibitor, an inorganic acid, and an alcohol which is effective to increase copper-loading in the composition.
    Type: Application
    Filed: June 7, 2007
    Publication date: October 4, 2007
    Applicant: ENTHONE, INC.
    Inventors: Abayomi Owei, Hiep Nguyen, Eric Yakobson
  • Capping of metal interconnects in integrated circuit electronic devices
    Patent number: 7268074
    Abstract: A multilayer metal cap over a metal-filled interconnect feature in a dielectric layer for incorporation into a multilayer integrated circuit device, and a method for forming the cap.
    Type: Grant
    Filed: June 14, 2004
    Date of Patent: September 11, 2007
    Assignee: Enthone, Inc.
    Inventors: Eric Yakobson, Richard Hurtubise, Christian Witt, Qingyun Chen