Abstract: Temperature sensing circuitry implemented on a semiconductor integrated circuit that senses the temperature at a site, digitizes the sensed temperature, and then outputs a signal representing such a sensed temperature. The temperature sensing circuitry converts a voltage signal that is proportional to the temperature to a frequency-based signal, which is converted to a digital bit value. A scalar factor is applied to another voltage signal that is inversely proportional to the temperature to produce a scaled voltage signal. The scaled voltage signal is converted to a second frequency-based signal, which is converted to a digital bit value, and then the two digital bit values are compared. The temperature is determined when the digital bit values substantially match.

Abstract: IC device comprising a plurality of functional components arranged into self-test cells. The IC device is configurable into a first self-test configuration comprising a first set of self-test partitions. Each self-test partition within the first set comprising at least one self-test cell. Functional components of the self-test cell(s) of each self-test partition within the first set are arranged to be configured into at least one scan-chain for said self-test partition when the IC device is configured into the first self-test configuration. The IC device is configurable into a second self-test configuration comprising a second set of self-test partitions. Each self-test partition within the second set comprising at least one self-test cell. Functional components of the self-test cell(s) of each self-test partition within the second set are arranged to be configured into at least one scan-chain for said self-test partition when the IC device is configured into the second self-test configuration.

Abstract: A memory device comprising a memory controller and a homogeneous memory accessible by the memory controller, wherein the homogeneous memory is divided by the memory controller in a first memory partition and a second memory partition, wherein the first memory partition is allocated to a first type of information comprising user data and ECC data that are arranged interleaved with the user data, and wherein the second memory partition is allocated to a second type of information comprising further user data.

Abstract: A nonvolatile memory device includes a shared port block, a plurality of decoded address signals, a read signal, and a read word line. The shared port block includes a shared port communicatively coupled to a block, the block comprising a plurality of memory cells, wherein the shared port is operable to sense a voltage level at each of the plurality of memory cells. The plurality of decoded address signals are communicatively coupled to the block. Each of the plurality of decoded address signals is operable to enable a corresponding one of the plurality of memory cells. The read signal is communicatively coupled to the shared port. The read signal is operable to enable a read operation associated with the block. The read word line signal is communicatively coupled to the shared port block. The read word line signal is operable to enable the read operation.

Abstract: Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.

Abstract: A method and apparatus are provided for controlling data flow by storing variable length encoded information bits in a circular buffer in a write operation to a virtual write address comprising a first wrap bit value appended by a current write address within the buffer address range and generating an interrupt alarm if the virtual write address crosses a virtual alarm address comprising a second wrap bit value appended by an alarm address within the buffer address range, where the first and second wrap bit values each toggle between first and second values every time the current write address or alarm address, respectively, wraps around the circular buffer, thereby synchronizing data flow in the circular buffer and/or preventing buffer overflow.

Abstract: A method for fabricating a stacked microelectronic device includes attaching a first package layer to a second package layer to form stacked microelectronic layers. Saw streets of the first package layer overlie and are aligned with saw streets of the second package layer. The first and second package layers include respective edge connectors formed between the saw streets and electronic components in the first and second package layers. A through package via is formed in one of the saw streets of the first and second package layers. The via is filled with conductive material. The stacked package layers are singulated along the saw streets in a manner that retains a portion of the conductive material to form a sidewall connector between at least two of the edge connectors.

Abstract: A processor uses a dedicated buffer to reduce the amount of time needed to execute memory copy operations. For each load instruction associated with the memory copy operation, the processor copies the load data from memory to the dedicated buffer. For each store operation associated with the memory copy operation, the processor retrieves the store data from the dedicated buffer and transfers it to memory. The dedicated buffer is separate from a register file and caches of the processor, so that each load operation associated with a memory copy operation does not have to wait for data to be loaded from memory to the register file. Similarly, each store operation associated with a memory copy operation does not have to wait for data to be transferred from the register file to memory.

Abstract: Integrated circuit devices with counter-doped conductive gates. The devices have a semiconductor substrate that has a substrate surface. The devices also have a first well of a first conductivity type, a source of a second conductivity type, and a drain of the second conductivity type. A channel extends between the source and the drain. A conductive gate extends across the channel The conductive gate includes a first gate region and a second gate region of the second conductivity type and a third gate region of the first conductivity type. The third gate region extends between the first and second gate regions. The devices further include a gate dielectric that extends between the conductive gate and the substrate and also include a silicide region in electrical communication with the first, second, and third gate regions. The methods include methods of manufacturing the devices.

Abstract: An embodiment of a plasma ignition system for an internal combustion engine having up to N cylinders includes a power splitter, N phase shifters, N amplifiers, a power combiner network, and up to N radiation devices. The power splitter divides an input RF signal into N divided RF signals. Each phase shifter applies one of multiple pre-determined phase shifts to one of the N divided RF signals to produce N phase shifted RF signals. The N amplifiers amplify the N phase shifted RF signals to produce N amplified, phase shifted RF signals. The power combiner network combines the N amplified, phase shifted RF signals to produce N output RF signals. Each of the radiation devices receives one of the N output RF signals, and produces a plasma discharge when a power level of the output RF signal is sufficiently high.

Abstract: A radiation device and related method are presented. The radiation device includes a body. The body includes a threaded portion configured to engage with a threaded opening in an engine and an open interior volume. The radiation device includes a ground electrode coupled to the body, a substrate disposed within the open interior volume in the body, and a radio frequency generator on the substrate. The radio frequency generator is configured to receive an input signal and, in response to the input signal, generate plasma energy between the body and the ground electrode.

Abstract: A device includes a semiconductor substrate having a surface with a trench, first and second conduction terminals supported by the semiconductor substrate, a control electrode supported by the semiconductor substrate between the first and second conduction terminals and configured to control flow of charge carriers during operation between the first and second conduction terminals, and a Faraday shield supported by the semiconductor substrate and disposed between the control electrode and the second conduction terminal. At least a portion of the Faraday shield is disposed in the trench.

Abstract: A mode-controlled voltage excursion detector apparatus for monitoring a supply voltage of a power supply applied to a load and a method of operating thereof is described. A voltage monitor is configured to detect an excursion event if the supply voltage exceeds or falls below at least one defined threshold, to generate an excursion event signal upon detection of the excursion event and to provide the generated excursion event signal to the excursion event output for being outputted via an excursion event output. A sensitivity control module is configured to receive a signal indicative of potential voltage excursions. A sensitivity control module is further operatively coupled to the sensitivity control input and configured to disable the outputting of an excursion event signal generated during a defined period of time in response to the reception of the signal, which triggers the disabling of the outputting.

Abstract: In a network control system, a method for managing traffic flow in a distributed controller environment includes stamping a packet to be forwarded between data forwarding units with flow control information based on an action set associated with a flow entry pushed by a logical controller. The packet is stamped by one or more of the data forwarding units. The flow control information is used to forward the packet between data forwarding units, thereby defining a datapath packet flow.

Abstract: A memory device includes a first memory cell having a first transistor, a second transistor, and a resistive storage element. During a read operation, sense current is conducted through the second transistor and the first transistor is used to sense feedback voltage at a first terminal of the resistive storage element. During a write operation, current is conducted through the first and second transistors.

Abstract: Embodiments of a microelectronic package including at least one trench via are provided, as are embodiments of a method for fabricating such a microelectronic package. In one embodiment, the method includes the step of depositing a dielectric layer over a first microelectronic device having a plurality of contact pads, which are covered by the dielectric layer. A trench via is formed in the dielectric layer to expose the plurality of contact pads therethrough. The trench via is formed to include opposing crenulated sidewalls having a plurality of recesses therein. The plurality of contact pads exposed through the trench via are then sputter etched. A plurality of interconnect lines is formed over the dielectric layer, each of which is electrically coupled to a different one of the plurality of contact pads.

Abstract: Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.

Abstract: A security enhancement to IPSec processing is achieved by changing the algorithms used at each re-key after expiration or termination of a Security Association session between two peer nodes. The solution enables an Internet Key Exchange to negotiate multiple algorithms to ensure that every renewed IPSec Security Association has a different algorithm combination, thereby making attempts at decryption by an attacker more difficult.

Abstract: A method for 3D device packaging utilizes through-hole metal post techniques to mechanically and electrically bond two or more dice. The first die includes a set of through-holes extending from a first surface of the first die to a second surface of the first die. The second die includes a third surface and a set of metal posts. The first die and the second die are stacked such that the third surface of the second die faces the second surface of the first die, and each metal post extends through a corresponding through-hole to a point beyond the first surface of the first die, electrically coupling the first die and the second die.

Abstract: An embodiment of an amplifier includes N (N>1) switch-mode power amplifier (SMPA) branches. Each SMPA branch includes two drive signal inputs and one SMPA branch output. A module coupled to the amplifier samples an input RF signal, and produces combinations of drive signals based on the samples. When an SMPA branch receives a first combination of drive signals, it produces an output signal at a first voltage level. Conversely, when the SMPA branch receives a different second combination of drive signals, it produces the output signal at a different second voltage level. Finally, when the SMPA branch receives a different third combination of drive signals, it produces the output signal at a voltage level of substantially zero. A combiner combines the output signals from all of the SMPA branches to produce a combined output signal that may have, at any given time, one of 2*N+1 quantization states.