Abstract: Deep trench isolation structures and systems and methods including the same are disclosed herein. The systems include a semiconductor device. The semiconductor device includes a semiconductor body, a device region, and the deep trench isolation structure. The deep trench isolation structure is configured to electrically isolate the device region from other device regions that extend within the semiconductor body. The deep trench isolation structure includes an isolation trench, a dielectric material that extends within the isolation trench, a first semiconducting region, and a second semiconducting region. The methods include methods of manufacturing a semiconductor device that includes the disclosed deep trench isolation structures. The methods also include methods of operating an integrated circuit device that includes a plurality of semiconductor devices that include the disclosed deep trench isolation structures.

Abstract: A method of fabricating a transistor includes forming a field isolation region in a substrate. After forming the field isolation region, dopant is implanted in a first region of a substrate for formation of a drift region. A drain region is formed in a second region of the substrate. The first and second regions laterally overlap to define a conduction path for the transistor. The first region does not extend laterally across the second region.

Abstract: Rail-to-rail follower circuits. In some embodiments, a source follower circuit may include a first level shifter configured to receive an input voltage; an N-type Metal-Oxide-Semiconductor (NMOS) transistor having a gate terminal coupled to an output of the first level shifter; a second level shifter configured to receive the input voltage; a P-type Metal-Oxide-Semiconductor (PMOS) transistor having a gate terminal coupled to an output of the second level shifter and a source terminal coupled to a source terminal of the NMOS transistor; and an amplifier configured to receive the input voltage and to output a current at a node between the source terminal of the NMOS transistor and the source terminal of the PMOS transistor, wherein the current is determined based upon a difference between the input voltage and a reference voltage.

Abstract: A semiconductor device includes, in various embodiments, a memory and a processor, with the processor configured to perform a permission check prior to execution of a memory-access instruction. The permission check comprises evaluating a permission attribute of the memory-access instruction and a permission attribute of a memory location to be accessed. The memory-access instruction is denied unless the permission attribute of the memory-access instruction is compatible with the permission attribute of the memory location to be accessed. In various embodiments, permission attributes are obtained by the processor from a one-time-programmable (OTP) memory module. In various embodiments, the permission attributes are determined based on a source address of the memory-access instruction and an address of the memory location to be accessed. In various embodiments, the OTP memory module stores permission settings that are based on the identity of suppliers for various portions of code stored in the memory.

Abstract: Embodiments of electronic circuits enable security of sensitive data in a design and manufacturing process that includes multiple parties. An embodiment of an electronic circuit can include a private key embedded within the electronic circuit that is derived from a plurality of components including at least one component known only to the electronic circuit and at least one immutable value cryptographically bound into messages and residing on the electronic circuit, public key generation logic that generates a public key to match the private key, and message signing logic that signs messages with the private key.

Abstract: An antenna diversity system comprises a diversity transmitter having a plurality of transmitter-side antennas, the diversity transmitter being arranged to generate at least one sequence of signals comprising data packets having payloads identical and identifiers different for each of the data packets, each of the identifiers identifying a corresponding one of the plurality of transmitter-side antennas; and to successively transmit at least two of the signals at different points in time on the corresponding ones of the plurality of transmitter-side antennas; and a receiver comprising a first receiver-side antenna, the receiver being arranged to successively receive the signals of the at least one sequence on the first receiver-side antenna, and to suspend receiving of subsequent signals of the at least one sequence when an error check of a data packet comprised in a received signal of the at least one sequence indicates a successful reception.

Abstract: A method of making a semiconductor device includes depositing a layer of polysilicon in a non-volatile memory (NVM) region and a logic region of a substrate. The layer of polysilicon is patterned into a gate in the NVM region while the layer of polysilicon remains in the logic region. A memory cell is formed including the gate in the NVM region while the layer of polysilicon remains in the logic region. The layer of polysilicon in the logic region is removed and the substrate is implanted to form a well region in the logic region after the memory cell is formed. A layer of gate material is deposited in the logic region. The layer of gate material is patterned into a logic gate in the logic region.

Abstract: A DMA controller allocates space at a buffer to different DMA engines based on the length of time data segments have been stored at a buffer. This allocation ensures that DMA engines associated with a destination that is experiencing higher congestion will be assigned less buffer space than a destination that is experiencing lower congestion. Further, the DMA controller is able to adapt to changing congestion conditions at the transfer destinations.

Abstract: Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within area of the substrate contained by the isolation structure, and a diode circuit. The buried layer is positioned below the top substrate surface, and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a drain region of the second conductivity type, and the diode circuit is connected between the isolation structure and the drain region. The diode circuit may include one or more Schottky diodes and/or PN junction diodes. In further embodiments, the diode circuit may include one or more resistive networks in series and/or parallel with the Schottky and/or PN diode(s).

Abstract: A method of making a semiconductor structure includes forming a select gate over a substrate in an NVM portion and a first protection layer over a logic portion. A control gate and a storage layer are formed over the substrate in the NVM portion, wherein the control and select gates have coplanar top surfaces. The charge storage layer is under the control gate, along adjacent sidewalls of the select gate and control gate, and is partially over the top surface of the select gate. A second protection layer is formed over the NVM portion and the logic portion. The second protection layer and the first protection layer are removed from the logic portion leaving a portion of the second protection layer over the control gate and the select gate. A gate structure is formed over the logic portion comprising a high k dielectric and a metal gate.

Abstract: Erasing of a non-volatile memory (NVM) having an array of bit cells includes soft programming after an initial erasing of the bit cells. Over-erased bit cells are determined. A temperature is detected. A first soft program gate voltage based on the temperature is provided. Soft programming on the over-erased bit cells using the first soft program gate voltage is performed. Any remaining over-erased bit cells are identified. if there are any remaining over-erased bit cells, soft programming is performed on the remaining over-erased bit cells using a second soft program gate voltage incremented from the first soft program gate voltage.

Abstract: A device includes a semiconductor substrate, emitter and collector regions disposed in the semiconductor substrate, having a first conductivity type, and laterally spaced from one another, and a composite base region disposed in the semiconductor substrate, having a second conductivity type, and including a base contact region, a buried region through which a buried conduction path between the emitter and collector regions is formed during operation, and a base link region electrically connecting the base contact region and the buried region. The base link region has a dopant concentration level higher than the buried region and is disposed laterally between the emitter and collector regions.

Abstract: An integrated circuit includes an input/output “I/O” cell arranged to drive an output signal and an activity analysis unit arranged to generate an activity factor based on the output signal. The activity factor represents a switching activity intensity of the I/O cell. The switching activity intensity is associated with an ageing effect of the I/O cell. The circuit further includes a calibration unit arranged to generate a switching pattern signal based on the generated activity factor and an I/O calibration cell arranged to be driven by the switching pattern signal, wherein the switching pattern signal emulates the ageing effect of the I/O cell.

Abstract: An integrated circuit (IC) device includes a plurality of metal layers having metal traces, and a plurality of vias interconnecting the metal traces. The presence of vacancies within the metal layers may disrupt the functionality of the IC device if the vacancies migrate to the vias interconnecting the metal layers. To mitigate vacancy migration, stressor elements are formed at the metal traces to form stress effects in the metal traces that, depending on type, either serve to repel migrating vacancies from the via contact area or to trap migrating vacancies at a portion of the metal trace displaced from the contact area. The stressor elements may be formed as stress-inducing dielectric or conductive material overlying the metal traces, or formed by inducing a stress memory effect in a portion of the metal trace itself.

Abstract: A method generates scan patterns for testing an electronic device called DUT having a scan path. A scan tester is arranged for executing a scan shift mode and a capture mode. A scan test interface has a clock control unit for stretching a shift cycle of the scan clock in dependence of a scan clock pattern. The method determines at least one power shift cycle which is expected to cause a voltage drop of a supply voltage exceeding a predetermined threshold during respective shift cycles of the scan shift mode, and generates, in addition to the scan pattern, a scan clock pattern indicative of stretching the power shift cycle. Advantageously, a relatively high scan shift frequency may be used while avoiding detrimental effects of said voltage drop by extending the respective power shift cycle, whereby test time and yield loss are reduced.

Abstract: An integrated circuit device comprises at least one clock monitor. The at least one clock monitor comprises a timer arranged to receive a clock signal, generate a first timing signal arranged to toggle between states in response to a trigger edge of the clock signal, and generate a second timing signal arranged to toggle between states in response to a trigger edge of the clock signal such that a state transition of the second timing signal in response to a trigger edge of the clock signal is delayed by a period T with respect to the trigger edge of the clock signal in response to which that transition occurs. The at least one clock monitor further comprises a detector arranged to receive at a first input thereof the first timing signal, receive at a second input thereof the second timing signal, compare states of the first and second timing signals, and configure an indication of a timing discrepancy based at least partly on the comparison of the first and second timing signals.

Abstract: Embodiments include methods of making semiconductor devices with low leakage Schottky contacts. An embodiment includes providing a partially completed semiconductor device including a substrate, a semiconductor on the substrate, and a passivation layer on the semiconductor, and using a first mask, locally etching the passivation layer to expose a portion of the semiconductor. Without removing the first mask, a Schottky contact is formed of a first material on the exposed portion of the semiconductor, and the mask is removed. Using a further mask, a step-gate conductor of a second material electrically coupled to the Schottky contact is formed overlying parts of the passivation layer adjacent to the Schottky contact. By minimizing the process steps between opening the Schottky contact window in the passivation layer and forming the Schottky contact material in this window, the gate leakage of a resulting field effect device having a Schottky gate may be substantially reduced.

Abstract: A clock signal generation system is provided that includes a clock signal generating circuit arranged to provide a first clock signal having a selectable first clock rate; a divider circuit connected to receive the first clock signal and arranged to generate, depending on a division factor, a second clock signal from the first clock signal, having a constant second clock rate and being synchronized with the first clock signal; and a controller module connected to the divider circuit and arranged to change the division factor when a different first clock rate is selected, to keep the second clock rate constant and the second clock signal synchronized with the first clock signal.

Abstract: A device includes a semiconductor substrate, source and drain regions in the semiconductor substrate and having a first conductivity type, a gate structure supported by the semiconductor substrate between the source and drain regions, a first well region in the semiconductor substrate, having a second conductivity type, and in which a channel region is formed under the gate structure during operation, and a second well region adjacent the first well region, having the second conductivity type, and having a higher dopant concentration than the first well region, to establish a path to carry charge carriers of the second conductivity type away from a parasitic bipolar transistor involving a junction between the channel region and the source region.

Abstract: A computer-implemented method of configuring a semiconductor device includes identifying an interconnect having an interconnect path length greater than a stress-induced void formation characteristic length of the semiconductor device, and placing, with a processor, a conductive structure adjacent the interconnect to define a pair of segments of the interconnect. Each segment has a length no greater than the stress-induced void formation characteristic length of the interconnect, and the conductive structure is selected from the group consisting of a decoy via connected to the interconnect, a floating tile disposed along the interconnect, a tab that laterally extends outward from the interconnect, and a jumper from a first metal layer in which the interconnect is disposed to a second metal layer.