Abstract: A semiconductor device includes a semiconductor substrate configured to include a channel, a gate supported by the semiconductor substrate to control current flow through the channel, a first dielectric layer supported by the semiconductor substrate and including an opening in which the gate is disposed, and a second dielectric layer disposed between the first dielectric layer and a surface of the semiconductor substrate in a first area over the channel. The second dielectric layer is patterned such that the first dielectric layer is disposed on the surface of the semiconductor substrate in a second area over the channel.

Abstract: A method with a circuit that includes a memory (130) coupled to an analog line coverage circuit (104). The analog line coverage circuit includes a plurality of buffers (151-154) in which each buffer is coupled to one memory location of the memory, a plurality of bin cells (161-164) in which each bin cell is coupled to a buffer, a multiplexer (170), each input terminal of which is coupled to a bin cell, and an analog-to-digital converter (180) coupled to the multiplexer and to an output terminal of the analog line coverage circuit. The analog line coverage circuit stores an analog voltage that is representative of a number of occasions that a memory location is accessed, and outputs a signal indicative thereof. A processor (102), coupled to the memory and to the analog line coverage circuit, enables the analog line coverage circuit when the processor is in a debug mode.

Abstract: A system for distributing an available memory resource comprising at least two random access memory (RAM) elements and RAM routing logic. The RAM routing logic comprises configuration logic to dynamically distribute the available memory resource into a first memory area providing redundant memory storage and a second memory area providing non-redundant memory storage. The system may further comprise bus access ports which support at least one of concurrent access by a bus access port to access redundantly stored data or non-redundantly stored data, or concurrent access by at least two bus access ports to respective RAM elements to access redundantly stored data or to a respective one of the RAM elements to access non-redundantly stored data. Comparison logic and error detection or correction logic may be provided to detect or correct errors in information read from the RAM elements.

Abstract: A method and circuit for a data processing system provide a partitioned interrupt controller with an efficient deferral mechanism for processing partitioned interrupt requests by executing a control instruction to encode and store a delay command (e.g., DEFER or SUSPEND) in a data payload with a hardware-inserted partition attribute (LPID) for storage to a command register (25) at a physical address (PA) retrieved from a special purpose register (46) so that the partitioned interrupt controller (14) can determine if the delay command can be performed based on local access control information.

Abstract: A method of fabricating an electronic apparatus includes forming an active layer over a wafer, forming a backscatter layer over the wafer, and directing radiation toward the wafer to anneal the active layer. The backscatter layer is not transparent to the radiation, more reflective than absorptive of the radiation, and positioned such that the backscatter layer inhibits exposure of the wafer to the radiation apart from the active layer.

Abstract: A start-up method for a self-powered gate drive circuit driving a power transistor gate. The method comprises charging, with a single-supply voltage, a first supply capacitor of a first gate drive circuit; switching on a first power transistor by applying a current supplied by a discharge of the first supply capacitor of the first gate drive circuit to the gate of the first power transistor; charging a second supply capacitor of the first gate drive circuit using an output signal from the first power transistor; and re-charging the first supply capacitor by applying a current supplied by a discharge of the second supply capacitor to the first capacitor.

Abstract: A method of performing state retention, for example during power gating, for at least one functional block within an integrated circuit device. The method comprises enabling at least one scan chain within the at least one functional block, scanning out a set of scan chain values from the at least one scan chain, a subset of the set of scan chain values comprising validation values, and writing the set of scan chain values to at least one memory element. The method further comprises retrieving the set of scan chain values from the at least one memory element, and validating the validation values within the retrieved set of scan chain values.

Abstract: A method of testing a semiconductor device against electrostatic discharge includes operating the semiconductor device, and, while operating the semiconductor device, monitoring a functional performance of the semiconductor device. The monitoring includes monitoring one or more signal waveforms of respective one or more signals on respective one or more pins of the semiconductor device to obtain one or more monitor waveforms, and monitoring one or more register values of one or more registers of the semiconductor device to obtain one or more monitor register values as function of time. The method includes applying an electrostatic discharge event to the semiconductor device while monitoring the functional performance of the semiconductor device. The method can further comprise determining a functional change from the one or more monitor waveforms and the one or more monitor register values as function of time.

Abstract: A self-powered gate drive circuit comprising a first capacitor electrically coupled to a power semiconductor collector node of the circuit; a first switch arranged between the first capacitor and a second capacitor, the first switch electrically coupling the first and second capacitors when switched on; the second capacitor; a first diode, the first diode anode electrically coupled to the first capacitor and the first diode cathode electrically coupled to the first switch; a second diode, the second diode cathode electrically coupled to the first capacitor and the second diode anode electrically coupled with a ground node of the circuit; and a second switch, wherein the second switch electrically couples the second capacitor with a power semiconductor gate node when switched on.

Abstract: A current sensor comprises a current carrying trace located within a substrate; and a sensing trace located within the substrate proximate to the current carrying trace; wherein the sensing trace detects an electromagnetic force (emf) generated by magnetic flux inductively coupled from the current carrying trace for transmitting to a current sensing device.

Abstract: An airbag apparatus connected with a battery includes activation circuits each of which has a squib and a high-side switching element, a safing switching element connected between the battery and the activation circuits, a safing switch control circuit controlling the safing switching element to provide a target voltage to the activation circuits, a terminal voltage acquiring circuit that acquires a terminal voltage of each squib, and a target voltage setting circuit that sets the target voltage. When a maximum-terminal voltage is lower than a reference voltage, the target voltage setting circuit sets the target voltage to be equal to the reference voltage. When the maximum-terminal voltage is higher than the reference voltage, the target voltage setting circuit sets the target voltage to correspond to the maximum-terminal voltage so that a reverse current is avoided in the high-side switching element.

Abstract: A quantizer for an analog to digital converter has an input for receiving an analog input signal. A detector senses a common mode voltage component of the input signal. A reference voltage source produces a plurality of reference voltages. A voltage source biases the reference voltage source in response to the sensed common mode voltage component. Therefore, the common mode voltage in the input signal establishes the common mode voltage of the reference voltage source. A plurality of comparators are connected to the reference voltage source, wherein each of the plurality of comparators compares the input signal to one of the plurality of reference voltages and produces a output bit denoting a result of the comparing.

Abstract: A method and apparatus for generating an indicator of a risk level in motor vehicle and notifying vehicle systems when a risk level is above a specific threshold includes, receiving a plurality of driver distraction indicators, assigning a weighting value to each indicator, applying a scaling factor to the weighting value assigned to those indicators which are identified as being related, and summing the weighting values to produce an output value indicating a risk level. Distraction indicators can include on-board system and sensor outputs and stored data relating to driver attributes. Related indicators may comprise those distraction indicators relating to environmental conditions (eg. rain and low ambient light levels), or to vehicle performance to driver concentration level (eg. in-car phone and navigation system). The scaling step allows the weighting process to be refined based on the status of other received indicators.

Abstract: A semiconductor pressure sensor device having a pressure-sensing die electrically connected to a microcontrol unit (MCU) using either through silicon vias (TSVs) or flip-chip bumps. An active surface of the pressure-sensing die is in facing relationship with the MCU. These embodiments avoid the need to used bonds to electrically connect the pressure-sensing die to the MCU, thereby saving time, reducing size, and reducing cost.

Abstract: A lead frame for a semiconductor device includes a die paddle and leads situated on a perimeter of the lead frame. The die paddle has a metal frame and a number of substantially linear metal connecting bars within the frame. The connecting bars interconnect different locations of the frame to form a multiple triangles, where a triangular-shaped cavity is formed within each triangle. An overall area of the cavities is greater than an overall area of the connecting bars.

Abstract: An electronic device is provided for determining a hopset for a frequency hopping radio communication system. The hopset is a number of radio channels in a range of channels available for radio communication, and other channels in the range constituting a channel pool of pool channels. A hopset processor assesses quality of the radio channels for communication, and removes a channel from the hopset when the assessed quality is below a predetermined threshold. A probability set is provided, the probability set having probability values for respective radio channels in the range, which probability values are adapted based on the assessed quality in the respective radio channels. A replacement channel is selected in a pseudorandom way from the channel pool weighted by the probability values, and then added to the hopset. Due to the pseudorandom selection of channels for the hopset the system can efficiently cope with various interferences.

Abstract: An integrated circuit (IC) device includes a plurality of metal layers having metal traces, and a plurality of vias interconnecting the metal traces. The presence of vacancies within the metal layers may disrupt the functionality of the IC device if the vacancies migrate to the vias interconnecting the metal layers. To mitigate vacancy migration, stressor elements are formed at the metal traces to form stress effects in the metal traces that, depending on type, either serve to repel migrating vacancies from the via contact area or to trap migrating vacancies at a portion of the metal trace displaced from the contact area. The stressor elements may be formed as stress-inducing dielectric or conductive material overlying the metal traces, or formed by inducing a stress memory effect in a portion of the metal trace itself.

Abstract: An information processing device comprises a first memory, a second memory, data transfer circuitry, power gating circuitry, and a controller. The first memory comprises at least two volatile memory units. The controller receives or generates a request for setting the information processing device into a reduced power mode; in response to the request, it selects specific memory units among the memory units; controls the data transfer circuitry to transfer data from the selected memory units to the second memory; and controls the power gating circuitry to power down the selected memory units.

Abstract: A method for minimizing soft error rates within caches by configuring a cache with certain sections to correspond to bitcell topologies that are more resistant to soft errors and then using these sections to store modified data.

Abstract: Methods and systems are disclosed for adjusting read/verify bias conditions for non-volatile memory (NVM) cells to improve performance and product lifetime of NVM systems. System embodiments include integrated NVM systems having a NVM controller, a bias voltage generator, and an NVM cell array. Further, the NVM systems can store performance degradation information and read/verify bias condition information within storage circuitry. The disclosed embodiments adjust read/verify bias conditions for the NVM cells based upon performance degradation determinations, for example, temperature-based performance degradation determinations.