Abstract: A device (300, 1000) provides a dual-edge triggered flip-flop (DETFF) that is reconfigurable to a master-slave flip-flop (MSFF). The device includes a reconfigurable MUX-D flip-flop including two distinct circuit configurations. In a first configuration, two latches or storage elements (340, 360, 1040, 1060) are operating in series to provide a MUX-D flip-flop. In a second configuration, the storage elements (340, 360, 1040, 1060) are operating in parallel to provide a dual-edge triggered flip-flop (DETFF).

Abstract: The embodiments described herein provide antifuse devices and methods that can be utilized in a wide variety of semiconductor devices. In one embodiment a semiconductor device is provided that includes an antifuse, a first diode coupled with the antifuse in a parallel combination, and a second diode coupled in series with the parallel combination. In such an embodiment the first diode effectively provides a bypass current path that can reduce the voltage across the antifuse when other antifuses are being programmed. As such, these embodiments can provide improved ability to tolerate programming voltages without damage or impairment of reliability.

Abstract: A method and apparatus are provided for error correction of a memory by using a first memory (18), second memory (14), and redundant memory (19) to perform error correction code (ECC) processing on data retrieved from the first memory (18) by using the redundant memory (19) to replace entries in the second memory (14) having repeat addresses, thereby freeing entries in the second memory (14) for use in detecting and managing errors identified by the ECC processing.

Abstract: A method of obtaining run-time information associated with executing an executable is described. The method comprises receiving an external database comprising one or more external debugging information entries, retrieving the one or more external debugging information entries from the external database and storing the one or more external debugging information entries retrieved from the external database in a debugging information entries collection. The method further comprises providing the debugging information entries collection to a debugging information consumer, and obtaining the run-time information from letting the debugging information consumer retrieve run-time values and format the run-time values according to the external debugging information entries in the debugging information entries collection.

Abstract: A There is proposed a method and device for simulating a semiconductor IC is provided, which comprises generating a high level description of the IC, generating a low level description of the IC comprising a plurality of instances describing the operation of the IC, conducting a low level function analysis of the IC based on metrics values associated with the instances, and performing a design optimization scheme. The scheme comprises mapping the metric values of instances describing functional units different from standard cells, to standard cells logically connected to said instances, by dividing each of the instance metrics values between a group of standard cells logically connected to the corresponding instance and adding each resulting portion of said instance metric value to the metric value of each of the group of standard cells, respectively.

Abstract: An audio unit, connected or connectable to a safety-critical apparatus, or integrated or integrable in the apparatus, is proposed. The audio unit may comprise a driver unit, a detection unit, and an alert unit. The driver unit may generate an analog audio signal in response to a request from the apparatus, to drive an acoustic output unit and thereby generate an acoustic signal for a user of the apparatus. The detection unit may detect the audio signal. The alert unit may generate an alert signal in response to the request if the detection unit has not detected the audio signal. It can thus be checked whether the acoustic signal is generated. A method for generating a safety critical acoustic signal is also described.

Abstract: An electronic device is for controlling multiple switching power circuits in a power supply system. Each switching power circuit has a power clock for controlling switching of a supply side switch that enables charging. The device has respective power clock delay units. Each respective power clock delay unit provides a respective power clock at a predetermined delay based on a respective input clock. The respective predetermined delays are chosen so that said switching of respective different supply side switches occurs at respective different points in time. Advantageously the conducted emission in high frequency bands is reduced.

Abstract: Methods are disclosed for extending floating gate regions within floating gate cells to form sub-lithographic features. Related floating gate cells and non-volatile memory (NVM) systems are also disclosed. In part, the disclosed embodiments utilize a spacer etch to form extended floating gate regions and floating gate slits with sub-lithographic dimensions thereby achieving desired increased spacing between control gate layers and doped regions underlying floating gate structures while still allowing for reductions in the overall size of floating-gate NVM cells. These advantageous results are achieved in part by depositing an additional floating gate layer over previously formed floating gate regions and then using the spacer etch to form the extended floating gate regions as sidewall structures and sub-lithographic floating gate slits. The resulting floating gate structures reduce breakdown down risks, thereby improving device reliability.

Abstract: A pipeline circuit determines a first effective address based a sum of a first value and a second value. The first effective address is based upon an actual value of a carry-in into a bit-wise region of the first and second values. The bit-wise region includes a predefined internal region of bits of the first and second values. The pipeline circuit also determines a second effective address based a sum of a third value and a fourth value. A collision detector circuit receives bits from the bit-wise region of each of the four values and determines a plurality of speculative results based upon the bits of the bit-wise regions and based upon a plurality of speculative carry-in values. A collision indicator is asserted based on at least one result of the plurality of speculative results, and the actual values of the first and second carry-in.

Abstract: An integrated circuit device comprising at least one analog to digital converter. The at least one ADC comprises at least one input operably coupled to at least one external contact of the integrated circuit device. The integrated circuit device further comprises detection circuitry comprising at least one detection module. The at least one detection module being arranged to receive at a first input thereof an indication of a voltage level at the at least one input of the at least one ADC, compare the received indication to a threshold value, and if the received indication exceeds the threshold value, output an indication that an excessive voltage state at the at least one input of the at least one ADC has been detected.

Abstract: A method of debugging software for an Integrated Development Environment connected to a target hardware system and to a simulator configured to simulate the target hardware system. The method comprises receiving, by a debugging tool of the Integrated Development Environment, simulator debugging data from the simulator, receiving, by the debugging tool, hardware debugging data from the target hardware system, comparing, by the debugging tool, the hardware debugging data with the simulator debugging data; and indicating, by the debugging tool, the result of comparing the hardware debugging data with the simulator debugging data.

Abstract: A device includes an amplifier having a first path and a second path and a first variable attenuator connected to the first path. The device includes a controller coupled to the first variable attenuator. The controller is configured to determine a magnitude of an input signal to the amplifier. When the magnitude of the input signal is below a threshold, the controller is configured to set an attenuation of the first variable attenuator to a first attenuation value. When the magnitude of the input signal is above the threshold, the controller is configured to set the attenuation of the first variable attenuator to a second attenuation value. The second attenuation value is less than the first attenuation value.

Abstract: An integrated circuit device comprising at least one radio frequency (RF) transceiver module. The at least one RF transceiver module includes a plurality of low noise amplifiers (LNAs) operably coupled to external contacts of the integrated circuit device and arranged to receive an RF signal from the respective external contact, amplify the received RF signal, and to output the amplified RF signal. Each transceiver module further includes a plurality of power amplifier (PA) modules operably coupled to the external contact of the integrated circuit device, and arranged to receive an RF signal to be transmitted, amplify the received RF signal to be transmitted, and output the amplified signal. The plurality of LNAs and the plurality of PAs are selectively configurable to operate in at least a first, multi-antenna configuration and a second, single antenna high transmit power configuration.

Abstract: A system and method are present for generating a modulated waveform. A timer is configured to generate a first modulated waveform signal, and an adder module is configured to calculate a delay. The delay includes at least one of an edge fractional delay and a dead time fractional delay. A delay module is operably coupled to the timer and the adder module. The delay module is configured to delay at least one of a rising edge of the first modulated waveform signal and a falling edge of the first modulated waveform signal by the delay to generate a second modulated waveform signal that has a higher frequency resolution than a frequency resolution of the first modulated waveform signal.

Abstract: A digital sample clock generator for generating a sample clock signal from an input signal derived from a drive measurement voltage signal of a vibrating MEMS gyroscope is provided.

Abstract: A device includes a semiconductor substrate, source and drain regions disposed in the semiconductor substrate, having a first conductivity type, and laterally spaced from one another, and a composite body region disposed in the semiconductor substrate and having a second conductivity type. The composite body region includes a first well region that extends laterally across the source and drain regions and a second well region disposed in the first well region. The drain region is disposed in the second well region such that charge carriers flow from the first well region into the second well region to reach the drain region. The second well region includes dopant of the first conductivity type to have a lower net dopant concentration level than the first well region. A pocket may be disposed in a drain extension region and configured to establish a depletion region along an edge of a gate structure.

Abstract: An integrated circuit device comprising at least one electrostatic discharge (ESD) clamp device. The at least one ESD clamp device comprises a first channel input, a second channel input, and a control input arranged to receive a control signal. The at least one ESD clamp device is arranged to selectively operate in a conductive state in which the at least one ESD clamp device permits current to flow between the first and second channel inputs thereof based at least partly on the received control signal. The integrated circuit device further comprises at least one biasing module. The at least one biasing module comprises at least one output operably coupled to the control input of the at least one ESD clamp device, and at least one input arranged to receive a thermal regulation signal. The at least one biasing module being arranged to apply a bias to the control signal for the at least one ESD clamp device based at least partly on the received thermal regulation signal.

Abstract: Circuit embodiments of a multistage voltage regulator circuit are presented, where a circuit includes a first stage that includes a first bias transistor having a current terminal coupled to a first regulated node. The circuit also includes a second stage that includes a second bias transistor having a current terminal coupled to a second regulated node. The circuit also includes a third stage including a third bias transistor having a current terminal coupled to a third node. The circuit also includes a control loop for regulating voltages at the first and second regulated nodes, where the second regulated node is connected to a control terminal of the first bias transistor; and where the first regulated node is connected to a control terminal of the third bias transistor.

Abstract: A system and method are disclosed for determining whether to allow or deny an access request based upon one or more descriptors at a local memory protection unit and based upon one or more descriptors a system memory protection unit. When multiple descriptors of a memory protection unit apply to a particular request, the least-restrictive descriptor will be selected. System access information is stored at a cache of a local core in response to a cache line being filled. The cached system access information is merged with local access information, wherein the most-restrictive access is selected.

Abstract: A memory unit comprises at least two volatile memory elements, analyzing circuitry and power gate. The memory elements may for example be latches, flip-flops, or registers. Each of the memory elements has at least two different states including a predefined reset state. The analyzing circuitry generates a power-down enable signal in response to each of the memory elements being in its reset state. The power gate powers down the memory elements in response to the power-down enable signal. The memory elements may be arranged to assume their reset states upon powering up the memory unit.