Abstract: The disclosed systems and methods relate to floating gate non-volatile memory cells, with a floating gate comprising at least two layers constructed in different conductive or semiconductive materials. At least two of the layers of the floating gate are separated by an intermediate dielectric layer having a predetermined thickness enabling direct tunneling current between the layers.

Abstract: An asynchronous analog to digital convertor for converting an analog input signal into a digital output is presented. According to an embodiment, the analog to digital convertor comprises a clock input operable to receive an external clock signal having a clock period, a comparator operable to compare the analog input signal to a reference signal, a digital to analog converter operable to generate the reference signal corresponding to a state of a successive approximation register, and a control block connected to the comparator and to the digital to analog converter. The control block is operable to generate and receive a sequence of control signals according to a successive approximation algorithm, to perform a plurality of comparisons, and to update the state of the successive approximation register thereby generating the digital output.

Abstract: A system for mapping tasks of at least one application on processing units of a reconfigurable array, the system comprising a plurality of programmable processing units, each programmable processing unit having at least one connection node, the programmable processing units disposed on a layer permitting interconnection between connection nodes; and a mapping unit adapted to substantially simultaneously optimize placement of the tasks on the plurality of programmable processing units and routing of interconnections between the plurality of processing units, the mapping unit adapted to select one placement algorithm among a plurality of predetermined placement algorithms and to select one routing algorithm from a plurality of predetermined placement algorithms, the selection configured to prefer use of non-random algorithms.

Abstract: Certain inventive aspects provide local field imaging with high spatial, time and field resolution by using an array of Hall effect sensors that can be individually read out. The design combines semiconductor Hall sensors and switches that isolate the addressed Hall sensor from the rest of the array. The compact design allows for large and very dense Hall sensor arrays that can be read out in a straightforward way.

Abstract: A method and device for converting first program code into second program code, such that the second program code has an improved execution on a targeted programmable platform, is disclosed. In one aspect, the method includes grouping operations on data for joint execution on a functional unit of the targeted platform, scheduling operations on data in time, and assigning operations to an appropriate functional unit of the targeted platform. Detailed word length information, rather than the typically used approximations like powers of two, may be used in at least one of the grouping, scheduling or assigning operations.

Abstract: A method for designing an integrated electronic circuit (1) having Electro Static Discharge (ESD) protection, the method comprising providing an integrated electronic circuit (1) having a predetermined performance during normal operation of the circuit, the integrated electronic circuit (1) comprising a power supply line (2) and at least one active device (4) protected by an ESD protection device (5), the active device (4) being powered from the power supply line (2), simulating an ESD event on the integrated electronic circuit (1) to determine if and where, during the ESD event, a parasitic ESD current path is created between the power supply line (2) and the at least one active device (4), and creating in thus determined parasitic ESD current path a circuit (6) to interrupt this parasitic ESD current path, at least during part of the ESD event.

Abstract: An distributed electronic circuit (1), such as a transmission line or distributed amplifier, is disclosed comprising an input terminal (2), an output terminal (3), power supply lines (4,5), a sequence of sections (61, 62, 63, 64, 65), between the input terminal (2) and the output terminal (3), arranged to transfer an electrical signal from one section to another section; each section (61, 62, 63, 64, 65) comprising at least one Electro Static Discharge (ESD) protection component (9) configured to, upon occurrence of an ESD event, convey corresponding ESD currents to a power supply line (4, 5); and wherein the ESD components (9) of the respective sections (61, 62, 63, 64, 65) are selected such that, upon occurrence of an ESD event, at least one subsequent section (62, 63, 64, 65) is triggered before the first section (61).

Abstract: A method is provided for growing mono-crystalline nanostructures onto a substrate. The method comprises at least the steps of first providing a pattern onto a main surface of the substrate wherein said pattern has openings extending to the surface of the substrate, providing a metal into the openings of the pattern on the exposed main surface, at least partly filling the opening with amorphous material, and then annealing the substrate at temperatures between 300° C. and 1000° C. thereby transforming the amorphous material into a mono-crystalline material by metal mediated crystallization to form the mono-crystalline nanostructure.

Abstract: The present invention provides a method for forming a layer (6) of polycrystalline semiconductor material on a substrate (1). The method comprises providing at least one catalyst particle (4) on a substrate (1), the at least one catalyst particle (4) comprising at least a catalyst material, the catalyst material having a melt temperature of between room temperature and 500° C., or being able to form a catalyst material/semiconductor material alloy with a eutectic temperature of between room temperature and 500° C., and forming a layer (6) of polycrystalline semiconductor material on the substrate (1) at temperatures lower than 500° C. by using plasma enhancement of a precursor gas, thereby using the at least one catalyst particle (4) as an initiator. The present invention furthermore provides a layer (6) of polycrystalline semiconductor material obtained by the method according to embodiments of the present invention.

Abstract: A resistive switching non-volatile memory element is disclosed comprising a resistive switching metal-oxide layer sandwiched between and in contact with a top electrode and a bottom electrode, the resistive switching metal oxide layer having a substantial isotropic non-stoichiometric metal-to-oxygen ratio. For example, the memory element may comprise a nickel oxide resistive switching layer sandwiched between and in contact with a nickel top electrode and a nickel bottom electrode whereby the ratio oxygen-to-nickel of the nickel oxide layer is between 0 and 0.85.

Abstract: Tunnel field-effect transistors (TFETs) are regarded as successors of metal-oxide semiconductor field-effect transistors (MOSFETs), but silicon-based TFETs typically suffer from low on-currents, a drawback related to the large resistance of the tunnel barrier. To achieve higher on-currents a nanowire-based TFET with a germanium (Ge) tunnel barrier in an otherwise silicon (Si) channel is used. A nanowire is introduced such that the lattice mismatch between silicon and germanium does not result in a highly defective interface. A dynamic power reduction as well as a static power reduction can result, compared to conventional MOSFET configurations. Multiple layers of logic can therefore be envisioned with these nanowire Si/Ge TFETs resulting in ultra-high on-chip transistor densities.

Abstract: A semiconductor package is disclosed. In one aspect, the package includes a base frame and a wiring substrate mounted on the base frame. The base frame has two pieces made of a material with respectively a first and a second coefficient of thermal expansion and connected to each other via resilient connecting structures. The wiring substrate has electric wiring tracks providing the electric connection between first and second bond pads, provided for being electrically connected to bond pads on respectively a die and a printed wiring board. The electrical wiring tracks have flexible parts provided to expand and contract along with the resilient connecting structures.

Abstract: Method for manufacturing a non-volatile memory comprising at least one array of memory cells on a substrate of a semiconductor material, the memory cells being self-aligned to and separated from each other by STI structures, the memory cells comprising a floating gate having an inverted-T shape in a cross section along the array of memory cells, wherein the inverted T shape is formed by oxidizing an upper part of the sidewalls of the floating gates thereby forming sacrificial oxide, and subsequently removing the sacrificial oxide simultaneously with further etching back the STI structures.

Abstract: One aspect of the invention relates to a symmetrical transformer with a stacked coil structure comprising two coils each having at least two turns, said coils being located in two conductive planes. The structure comprises four identical basic elements, each basic element providing a conductive path for part of said coils. The terminals of the transformer are located at opposite sites of the structure so that the structure can be easily connected in a chain. The invention also relates to a semiconductor device comprising such a structure.

Abstract: A method is presented for determining an actual pulse position in a signal. This signal comprises a plurality of successive frames, wherein each frame has length L and contains one pulse with width W, a number of discrete possible pulse positions being considered within in each frame which is at least L/W. The method comprises the steps of a) sampling the signal at a sampling rate below L/W with a varying sampling phase such that the whole frame length L is covered, b) obtaining a set of samples with at least one at each of the possible pulse positions, c) correlating this set of samples with a set of one or more predetermined values and d) determining the actual pulse position from said correlation. The method provides a low-complex signal acquisition solution in a receiver and is particularly useful for low-complexity and low-power IR-UWB transceivers.

Abstract: A method for insertion bonding and a device thus obtained are disclosed. In one aspect, the device includes a first substrate having a front main surface and at least one protrusion at the front main surface. The device includes a second substrate having a front main surface and at least one hole extending from the front main surface into the second substrate. The protrusion of the first substrate is inserted into the hole of the second substrate. The hole is formed in a shape wherein the width is reduced in the depth direction and wherein the width of at least a part of the hole is smaller than the width of the protrusion at the location of the metal portion thereof. The protrusion is deformed during insertion thereof in the hole to provide a bond between the part of the hole and the metal portion.

Abstract: Systems and methods for transferring incoming single-ended burst signals of which at least one characteristic varies widely from burst to burst onto a pair of differential lines. The systems comprise an input for receiving an incoming burst signal, a signal adaptation block for adapting said widely varying characteristic and a single-ended-to-differential converter. In a first aspect a reset signal for resetting a settings determination block, which controls the signal adaptation block, is sent backwards over the differential lines, preferably using a common-mode signal. In a second aspect, a status freezing mechanism is employed for freezing the settings of the settings determination block after the end of the preamble of an incoming burst.

Abstract: A novel nanostructure device operating in Junction Field Effect Transistor (JFET) mode is provided that avoids the majority of the carriers that interact with the interface (e.g. surface roughness, high-k scattering).

Abstract: One inventive aspect is related to a method of bonding two elements and micro-electronic devices produced according to such methods. In one aspect, a micro-electronic device includes a first and a second element, bonded together by a joining structure. The joining structure has a first micropattern portion, a second micropattern portion, and a joining portion in between the first and second micropattern portions. The first and second micropattern portions are made of cobalt. The joining portion includes intermetallic compounds of cobalt and tin (Sn).

Abstract: The present disclosure relates to methods and solutions for growing metal charge-transfer salts on a metal surface, such as a metal layer at the bottom of a via hole. The method makes use of a solution comprising a salt additive. The temperature during growth is in the range of ?100° C. to +100° C. The method allows controlled growth of the metal charge transfer salt inside via hole while limiting growth outside the via hole. The method further limits corrosion of the metallic connections at the bottom of the via hole.