Abstract: The current invention presents a method for thinning wafers. The method uses a two-step process, whereby first the carrier wafer (2) is thinned and in a second step the device wafer (1) is thinned. The method is based on imprinting the combined thickness non-uniformities of carrier (2) and glue layer (3) essentially on the carrier (2), with a resulting low TTV of the wafer (100) after thinning.

Abstract: A patterned electret structure (21) on a substrate (10) comprises a dielectric structure comprising at least one non-patterned dielectric layer (22), and a charge pattern (14) in the dielectric structure and/or at a surface of a dielectric layer that is part of the dielectric structure and/or at an interface between dielectric layers that are part of the dielectric structure. By the presence of the non-patterned dielectric layer (22), the influence of the presence of a conductive substrate (10) on the charges (14) of the electret structure (21) is alleviated, hence increasing the charge stability over time. Moreover, in embodiments of the present invention, the charge stability is substantially independent of the width (W1, W2, W3) of the charge pattern. A method for manufacturing such patterned electret structure (21) is also provided.

Abstract: A method is disclosed for manufacturing a sealed cavity in a microelectronic device, comprising forming a sacrificial layer at least at locations where the cavity is to be provided, depositing a membrane layer over the top of the sacrificial layer, patterning the membrane layer in at least two separate membrane layer blocks, removing the sacrificial layer through the membrane layer, and sealing the cavity by sealing the membrane layer, wherein patterning the membrane layer is performed after removal of the sacrificial layer.

Abstract: In a method for fabricating a semiconductor element in a substrate, first implantation ions are implanted into the substrate, whereby micro-cavities are produced in a first partial region of the substrate. Furthermore, pre-amorphization ions are implanted into the substrate, whereby a second partial region of the substrate is at least partly amorphized, and whereby crystal defects are produced in the substrate. Furthermore, second implantation ions are implanted into the second partial region of the substrate. Furthermore, the substrate is heated, such that at least some of the crystal defects are eliminated using the second implantation ions. Furthermore, dopant atoms are implanted into the second partial region of the substrate, wherein the semiconductor element is formed using the dopant atoms.

Abstract: Polymer particles of improved mechanical hardness are provided, the polymer particles being subjected to a thermal cycle of heating and subsequently cooling. The polymer particles comprise combinations of preferably three monomers, the monomers having hydrophilic and hydrophobic groups in their polymer chain in order to achieve preferential orientation of the polymer chains in a polar solvent after applying the heating cycles of the invention (for example, but not limited to, polymethylmethacrylate and polystyrene based terpolymers and copolymers). Polymeric abrasives used in slurry compositions for polishing copper and their use in a chemical mechanical polishing method are also provided.

Abstract: A method of manufacturing a semiconductor device and the device resulted thereof is disclosed. In one aspect, the device has a heterogeneous layer stack of one or more III-V type materials, at least one transmission layer of the layer stack having a roughened or textured surface for enhancement of light transmission. The method includes (a) growing the transmission layer of a III-V type material, (b) providing a mask layer on the transmission layer, the mask layer leaving first portions of the transmission layer exposed, and (c) partially decomposing the first exposed portions of the transmission layer. Suitably redeposition occurs in a single step with decomposition, so as to obtain a textured surface based on crystal facets of a plurality of grown crystals. The resulting device has a light-emitting element. The transmission layer hereof is suitably present at the top side.

Abstract: The invention relates to method for manufacturing a thermoelectric generator, comprising the steps of replicating a structure into a flexible substrate (4) for providing a set of cavities (4a); providing an initiator (2a) in the cavities for growing respective piles (6, 7) of thermoelectric materials; growing the respective piles of thermoelectric materials from said initiator; providing electrical connection between the respective piles of thermoelectric materials for forming thermocouples of the thermoelectric generator. The invention further relates to a wearable thermoelectric generator and a garment comprising the same.

Abstract: A method and system are disclosed for gathering information about an object including single domain particles which have a diameter in the range of about 5 to 80 nm. In one aspect, a method includes generating a static magnetic field of less than about 0.1 Tesla on the object and generating an RF energy, pulsed or continuous wave, so as to generate electron paramagnetic resonance of the single domain particles. The method also includes detecting the electron paramagnetic resonance of the single domain particles in the form of an image of the object. The single domain particles may have a predetermined diameter and a predetermined saturation magnetization and the applied magnetic field may be such that the single domain particles reach a magnetization being at least about 10% of the saturation magnetization. The method may be used for detecting tags in an object and for activating tags.

Abstract: The invention relates to methods for synchronising a device to a signal containing a train of pulses representing a programmable number of repetitions of a predetermined code. Pulse position and code phase are searched for. In a first aspect, a programmable number of samples is taken per pulse frame in function of the available number of repetitions of said predetermined code. In a second aspect, the method comprises a signal detection stage from which, after performing a confirmation stage, information can be kept for a subsequent stage. In a third aspect, only a limited number of rotated versions of the predetermined code are checked, using a presumed code phase which is kept from a preceding stage.

Abstract: Disclosed herein are methods and devices for monitoring a heartbeat. In one embodiment, the device may comprise a sensor package mountable over a pulse location of a user. The sensor package may include a first sensor element configured to sense at least one signal at the pulse location and to provide a first output signal comprising a heart pulse signal and a first set of noise artefacts, a second sensor element configured to sense at least one signal at the pulse location and to provide a second output signal indicative of a second set of noise artefacts, and a mechanically isolating material located between the first sensor element and the second sensor element. The device may further comprise processing circuitry connected to the sensor package and configured to extract the heart pulse signal from the first output signal based on the first output signal and the second output signal.

Abstract: An amplifying circuit arranged for converting an input signal into an amplified output signal comprising: an input node (11) at an input side of said circuit for receiving said input signal (pi); an output node (9) at an output side of said circuit for outputting said amplified output signal (io); a first gain element (M1) connected between said input and output nodes and provided for converting an input voltage taken from said input signal into a current for forming said amplified output signal; a negative feedback loop (3) over said first gain element, said negative feedback loop having first elements (5, 6) arranged for providing input matching; and a positive feedback loop (2) over said first gain element, said positive feedback loop having second elements (7, 8) arranged for providing additional input matching and gain enhancement of said first gain element.

Abstract: The present disclosure is related to a dielectric layer comprising a rare-earth aluminate (RExAl2-xO3 with 0<x<2) and having a perovskite crystalline structure, wherein the rare-earth aluminate comprises a rare-earth element having an atomic number higher than or equal to 63 and lower than or equal to 71. The disclosure also relates to method of manufacturing of a dielectric stack and a dielectric stack comprising said rare-earth aluminate dielectric layer and further comprising a template stack comprising at least an upper template layer, wherein the upper template layer has a perovskite structure, and wherein the upper template layer is underlying and in contact with the rare-earth aluminate dielectric layer. In a preferred embodiment the dielectric stack further comprises a lower template layer having a crystalline structure, wherein the lower template layer is underlying and in contact with the upper template layer.

Abstract: An improved reaction chamber cleaning process is provided for removing water residues that makes use of noble-gas plasma reactions. The method is easy applicable and may be combined with standard cleaning procedure. A noble-gas plasma (e.g. He) that emits high energy EUV photons (E>20 eV) which is able to destruct water molecules to form electronically excited oxygen atoms is used to remove the adsorbed water.

Abstract: The present invention provides a method for forming a layer (6) of polycrystalline semiconductor material on a substrate (1). The method comprises providing at least one catalyst particle (4) on a substrate (1), the at least one catalyst particle (4) comprising at least a catalyst material, the catalyst material having a melt temperature of between room temperature and 500° C., or being able to form a catalyst material/semiconductor material alloy with a eutectic temperature of between room temperature and 500° C., and forming a layer (6) of polycrystalline semiconductor material on the substrate (1) at temperatures lower than 500° C. by using plasma enhancement of a precursor gas, thereby using the at least one catalyst particle (4) as an initiator. The present invention furthermore provides a layer (6) of polycrystalline semiconductor material obtained by the method according to embodiments of the present invention.

Abstract: A method is disclosed for passivating and contacting a surface of a germanium substrate. A passivation layer of amorphous silicon material is formed on the germanium surface. A contact layer of metal is then formed on the passivation. The structure is heated so that the germanium surface makes contact with the contact layer. Thus, a passivated germanium surface is disclosed, as well as a solar cell comprising such a structure.

Abstract: The present invention provides a method for depositing or growing a group III-nitride layer, e.g. GaN layer (5), on a substrate (1), the substrate (1) comprising at least a Ge surface (3), preferably with hexagonal symmetry. The method comprises heating the substrate (1) to a nitridation temperature between 400° C. and 940° C. while exposing the substrate (1) to a nitrogen gas flow and subsequently depositing the group III-nitride layer, e.g. GaN layer (5), onto the Ge surface (3) at a deposition temperature between 100° C. and 940° C. By a method according to embodiments of the invention, a group III-nitride layer, e.g. GaN layer (5), with good crystal quality may be obtained. The present invention furthermore provides a group III-nitride/substrate structure formed by the method according to embodiments of the present invention and a semiconductor device comprising at least one such structure.

Abstract: A quantum well device and a method for manufacturing the same are disclosed. In one aspect, the device includes a quantum well region overlying a substrate, a gate region overlying a portion of the quantum well region, a source and drain region adjacent to the gate region. The quantum well region includes a buffer structure overlying the substrate and including semiconductor material having a first band gap, a channel structure overlying the buffer structure including a semiconductor material having a second band gap, and a barrier layer overlying the channel structure and including an un-doped semiconductor material having a third band gap. The first and third band gap are wider than the second band gap. Each of the source and drain region is self-aligned to the gate region and includes a semiconductor material having a doped region and a fourth band gap wider than the second band gap.

Abstract: Embodiments of the present invention relate to methods and systems of transmitting data signals from at least one transmitting terminal with a spatial diversity capability to at least two receiving user terminals, each provided with spatial diversity receiving device. The methods and systems are useful, for example, in communication between terminals, e.g., wireless communication. In certain embodiments, transmission can be between a base station and two or more user terminals, wherein the base station and user terminals are each equipped with more than one antenna.

Abstract: An analog to digital conversion circuit and method is presented. The analog to digital circuit (100) comprises a first capacitor (103), arranged for being switchably (102) connected on one side to an input voltage (101), at least one successive approximation circuit (104), a comparator (108) arranged for outputting a sign indicative of the difference between the voltage on the first capacitor (103) and a comparison voltage (109), and a control block (110), arranged for converting said comparator's output into steering signals and in a digital output signal. The successive approximation circuit comprises a second capacitive structure (106), switchably connected to a pre-charge circuit (107) arranged for pre-charging the second capacitive structure (106), whereby the second capacitive structure (106) is connected in parallel with the first capacitor (103) via a charge copying circuit (105).

Abstract: A method is disclosed for passivating and contacting a surface of a germanium substrate. A passivation layer of amorphous silicon material is formed on the germanium surface. A contact layer of metal is then formed on the passivation. The structure is heated so that the germanium surface makes contact with the contact layer. Thus, a passivated germanium surface is disclosed, as well as a solar cell comprising such a structure.