Abstract: A microstructure has a substrate, a fixed electrode having a plurality of fixed fingers fixed to the substrate, a movable electrode having a body (28) and a plurality of fingers (22) extending from the body, the movable electrode being movable relative to the fixed fingers to vary a capacitance of the electrodes. The fixed fingers (21) extend in a first plane parallel to a main surface of the substrate, wherein the body of the movable electrode extends in a second plane adjacent to the first plane so that the body faces at least some of the plurality of fixed fingers. Such vertical integration can help enable such devices to be made more compact.

Abstract: A radio frequency (RF) transmitter device arranged for supplying RF energy is disclosed. In one aspect, the RF transmitter device has a reception unit for receiving information on detected living beings. The RF transmitter device is arranged for adapting its transmit power according to the received information. A method for adapting the transmit power of the RF transmitter device while it is supplying energy to a sensor network is also disclosed.

Abstract: A method for manufacturing thermopile carrier chips comprises forming first type thermocouple legs and second type thermocouple legs on a first surface of a substrate and afterwards removing part of the substrate form a second surface opposite to the first surface, thereby forming a carrier frame from the substrate and at least partially releasing the thermocouple legs from the substrate, wherein the thermocouple legs are attached between parts of the carrier frame. First type thermocouple legs and second type thermocouple legs may be formed on the same substrate or on a separate substrate. In the latter approach both types of thermocouple legs may be optimised independently. The thermocouple legs may be self-supporting or they may be supported by a thin membrane layer. After mounting the thermopile carrier chips in a thermopile unit or in a thermoelectric generator, the sides of the carrier frame to which no thermocouple legs are attached are removed.

Abstract: A method is provided for producing a thin substrate with a thickness below 750 microns, comprising providing a mother substrate, the mother substrate having a first main surface and a toughness; inducing a stress with predetermined stress profile in at least a portion of the mother substrate, said portion comprising the thin substrate, the induced stress being locally larger than the toughness of the mother substrate at a first depth under the main surface; such that the thin substrate is released from the mother substrate, wherein the toughness of the mother substrate at the first depth is not lowered prior to inducing the stress. The method can be used in the production of, for example, solar cells.

Abstract: A bit stream representing n-dimensional data structures may be encoded and decoded. A part of the data can be mappable within predefined similarity criteria to a part of the data of another data structure. The similarity criteria may include, a spatial or temporal shift of the data. The data structures are typically sequential video frames such as is used in motion estimation and/or compensation of moving pictures, and a part of the data structure may be a block of data within a frame. The shift may be any suitable shift such as linear translation, rotation, or change of size. Digital filtering may be applied to a reference or other frame of data to generate subbands of a set of subbands of an overcomplete representation of the frame by calculations performed at single rate. The digital filtering may be implemented in a separate filter module or in software.

Abstract: A method for trimming an effective refractive index of optical waveguiding structures made for example in a high refractive index contrast material system. By compaction of cladding material in a compaction area next to patterns or ridges that are formed in the core material for realizing an optical waveguiding structure, the effective index of refraction of the optical waveguiding structure can be trimmed. Thus, the operating wavelength of an optical component comprising such an optical waveguiding structure can be trimmed. An optical waveguide structure thus obtained is also disclosed.

Abstract: An active interface device including a transducer or sensor array having a plurality of transducers or sensors arranged to transform a cell activity into an electrical signal, at least one detection unit for detecting the electrical signal(s), at least one recording unit for recording the electrical signal(s), comprising a plurality of recording channels arranged for being routed to the transducers or sensors, and at least one control unit. The control unit is arranged for addressing the transducers or sensors to the detection unit(s), for activating transducers or sensors, and for routing the recording channels to activated transducers or sensors.

Abstract: The present invention is related to a method for multi-user wireless transmission of data signals in a communication system having at least one base station and at least one terminal where for a plurality of users have robustness to frequency-selective fading added to the data to be transmitted, then grouping data symbols into blocks formed by demultiplexing a serial-to-parallel operation, and spreading and scrambling a portion of the obtained blocks of data, followed by combining spread and scrambled portions of the blocks, adding transmit redundancy to the combined spread and scrambled portions which is then transmitted.

Abstract: The present invention is related to a method for aligning and bonding a first element (1) and a second element (2), comprising: obtaining a first element (1) having at least one protrusion, the protrusion having a base portion (12) made of a first material and an upper portion (13) made of a second, deformable material, different from the first material; obtaining a second element (2) having a first main surface and second main surface (8) and at least one through-hole between the first and second main surface; placing the first and second element onto each other; receiving in the through-hole of the second element (2) the protrusion of the first element (1), the protrusion being arranged and constructed so as to extend from an opening of the through-hole in the first main surface to a position beyond an opening of the through-hole in the second main surface (8); deforming the deformable portion (13) of the protrusion, such that the deformed portion mechanically fixes the second element (2) on the first el

Abstract: A method and device for detecting a symbol transmitted over a communication channel in a multiple input-multiple output communication system are disclosed. In one aspect, the method includes receiving a symbol transmitted over a communication channel of a multiple input-multiple output communication system. The method may also include searching a subset of possible transmitted symbols, the subset having a predetermined size dependent on properties of the communication channel. The method may also include deciding to which symbol of the subset the received symbol corresponds.

Abstract: A photovoltaic device is disclosed. In one aspect, the device is formed in a semiconductor substrate. It has a radiation receiving front surface and a rear surface. The device may have a first region of one conductivity type, a second region with the opposite conductivity type adjacent to the front surface, and an antireflection layer. The rear surface is covered by a dielectric layer covering also an inside surface of the via. The front surface has current collecting conductive contacts. The rear surface has conductive contacts extending through the dielectric. A conductive path is in the via for photogenerated current from the front surface. By having the dielectric all over, no aligning and masking is needed. The same dielectric serves to insulate, provide thermal protection, and helps in surface and bulk passivation. It also avoids the need for a junction region near the via, hence reducing unwanted recombination currents.

Abstract: A method is provided for producing a porogen-residue-free ultra low-k film with porosity higher than 50% and a high elastic modulus above 5 GPa. The method starts with depositing a SiCOH film using Plasma Enhanced Chemical Vapor Deposition (PE-CVD) or Chemical Vapor Deposition (CVD) onto a substrate and then first Performing an atomic hydrogen treatment at elevated wafer temperature in the range of 200° C. up to 350° C. to remove all the porogens and then performing a UV assisted thermal curing step.

Abstract: A semiconductor device includes: an n-transistor including a first gate insulating film made of a high-dielectric-constant material and a first gate electrode fully silicided with a metal, the first gate insulating film and the first gate electrode being formed in this order over a semiconductor region; and a p-transistor including a second gate insulating film made of the high-dielectric-constant material and a second gate electrode fully silicided with the metal, the second gate insulating film and the second gate electrode being formed in this order over the semiconductor region. If the metal has a work function larger than a Fermi level in potential energy of electrons of silicon, a metal concentration of the second gate electrode is higher than that of the first gate electrode whereas if the metal has a work function smaller than the Fermi level of silicon, a metal concentration of the second gate electrode is lower than that of the first gate electrode.

Abstract: Methods for designing a micro electromechanical device are disclosed. In one embodiment, the method comprises extending a floating element between a first anchor point and a second anchor point. The floating element includes a predetermined reference portion. The method further comprises determining a first location for a first stress relieving element on a first flexible section located between the first anchor point and the reference point, and determining a second location for a second stress relieving element on a second flexible section located between the second anchor point and the reference point. The method additionally comprises placing the first and second stress relieving elements at the first and second determined locations, respectively, thereby causing the reference portion to be located within a predetermined reference plane while in at least one predetermined state.

Abstract: The present invention is related to a method for growing a layer of a mono-crystalline material on a substrate comprising loading a substrate having an exposed area made of a first mono-crystalline material in a process chamber, supplying a beam of neutral species of a second material towards the substrate in the presence of a diffusion limiting gas, such that the pressure in the process chamber is between 1×10?6 torr and 1×10?4 torr, so that the neutral species of the second material are adsorbed on the exposed area, thereby growing a mono-crystalline layer of said second material overlying and in contact with the first mono-crystalline material wherein said diffusion limiting gas is a non-reactive gas.

Abstract: A method for depositing a coating layer on at least a part of a surface of a substrate is described. The method includes supplying a coating substance to at least part of a surface of a substrate. The substrate is subjected to a relative movement with respect to a source of the coating substance. The surface tension of the coating substance is modified, at least locally, at least part of the time while the at least part of the substrate is subjected to the movement. A thickness of the coating layer is influenced by modifying the surface tension of the coating substance.

Abstract: Methods and apparatuses for cleaning a surface of a substrate are presented. The method comprises positioning a substrate at a controllable distance from a piezoelectric transducer, supplying a cleaning liquid between the substrate and the transducer, applying an oscillating acoustic force to the cleaning liquid by actuating the transducer, and moving the transducer relative to the substrate. The method further comprises, while moving the transducer relative to the substrate, measuring a value that indicates a distance between a surface of the substrate and the transducer, comparing the measured value to a desired value, and adjusting the distance between the surface and the transducer so that the measured value is maintained substantially equal to the desired value. The measured value may be the distance between the surface of the substrate and the transducer or a phase shift between an alternating current and voltage applied to the transducer.

Abstract: Manufacturing an III-V engineered substrate involves providing a base substrate comprising an upper layer made of a first III-V compound with a <110> or a <111> crystal orientation, forming an intermediate layer comprising at least a buffer layer of a second III-V compound, wherein the intermediate layer is overlying and in contact with the upper layer of the base substrate. Then a pseudomorphic passivation layer made of a group IV semiconductor material is grown so as to be overlying and in contact with the intermediate layer. This can enable an unpinned interface. The substrate surface can be smoother, implying fewer problems from surface stress. It can be used in electronic devices such as metal-oxide-semiconductor field effect transistors (MOSFETs), high electron mobility transistors (HEMTs), tunneling field effect transistors (TFETs), and optoelectronic devices.

Abstract: Embodiments of the present disclosure provide a method to fabricate a hetero-junction in a Tunnel Field Effect Transistor (TFET) device configuration (e.g. in a segmented nanowire TFET). Since in prior art devices the highly doped source is in direct contact with the lowly doped or undoped channel, some amount of dopants will diffuse from the source to the channel which cannot be avoided due to the source deposition thermal budget. This out-diffusion reduces the steepness of the doping profile and hence deteriorates the device operation. Particular embodiments comprise the insertion of a thin transition layer in between the source region and channel region such that the out-diffusion is within a very limited region of a few nm, guaranteeing extremely good doping abruptness thanks to the lower diffusion of the dopants in the transition layer. The transition layer avoids the direct contact between the highly doped (e.g. Ge or SiGe) source region and the lowly doped or undoped (e.g.

Abstract: The present invention is related to an analog-to-digital converter circuit (1) wherein a comparator based asynchronous binary search is used. The architecture comprises a self-clocked (asynchronous) hierarchical binary tree of comparators, each arranged for being provided with a predetermined threshold. The input signal is applied in parallel to all comparators as is the case with flash converters, but the clock is applied to (at least) one comparator (2) only, preferably to the first or root comparator. The at least one comparator (2) is further arranged for controlling at least one other comparator (3) of the plurality of comparators (2, 3, 4).