Patents Assigned to IMEC
  • DUAL WORK FUNCTION SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20090134466
    Abstract: A method of manufacturing dual work function devices starting from a single metal electrode and the device resulting therefrom are disclosed. In one aspect, the method includes a single-metal-single-dielectric (SMSD) CMOS integration scheme. A single dielectric stack comprising a gate dielectric layer and a dielectric capping layer and one metal layer overlying the dielectric stack are first deposited, forming a metal-dielectric interface. Upon forming the dielectric stack and the metal layer, at least part of the dielectric capping layer is selectively modified by adding work function tuning elements, the part being adjacent to the metal-dielectric interface.
    Type: Application
    Filed: October 24, 2008
    Publication date: May 28, 2009
    Applicants: Interuniversitair Mcroelektronica Centrum vzw(IMEC), Taiwan Semiconductor Manufacturing Company, Ltd., Samsung Electonics Co. Ltd.
    Inventors: Hag-Ju Cho, Shih-Hsun Chang
  • System and method to obtain surface structures of multi-dimensional objects, and to represent those surface structures for animation, transmission and display
    Patent number: 7538764
    Abstract: Four related but independent aspects are described: (1) a method and a system to derive mesh surface descriptions (also called connectivity-wireframes) and material properties from objects represented as a scalar field (e.g. discrete multi-dimensional data), scalar functions (e.g. implicit surfaces) or any other surface description, (2) a compact, optionally multi-scalable, optionally view-dependent, optionally animation-friendly, multi-dimensional surface representation method and system comprising a combination of a surface mesh description and material properties associated with a reference grid, (3) a digital coding and decoding method and system of a combined surface mesh representation with connectivity information and material properties and a reference grid, and (4) a method and system for conversion of other surface descriptions to the combined surface mesh representation and reference grid.
    Type: Grant
    Filed: July 19, 2005
    Date of Patent: May 26, 2009
    Assignees: Interuniversitair Micro-Elektronica Centrum (IMEC), Vrije Universiteit Brussel (VUB )
    Inventor: Ioan Alexandru Salomie
  • CONTROLLED AND SELECTIVE FORMATION OF CATALYST NANAOPARTICLES
    Publication number: 20090131245
    Abstract: A method for forming catalyst nanoparticles on a substrate and a method for forming elongate nanostructures on a substrate using the nanoparticles as a catalyst are provided. The methods may advantageously be used in, for example, semiconductor processing. The methods are scalable and fully compatible with existing semiconductor processing technology. Furthermore, the methods allow forming catalyst particles and elongate nanostructures at predetermined locations on a substrate.
    Type: Application
    Filed: November 6, 2007
    Publication date: May 21, 2009
    Applicant: Interuniversitair Microelektronica Centrum (IMEC)
    Inventors: Santiago Cruz Esconjauregui, Caroline Whelan
  • QUALITY-ENERGY SCALABILITY TECHNIQUE FOR TRACKING SYSTEMS
    Publication number: 20090129281
    Abstract: A method of managing the operation of a system is presented. The system includes a processing subsystem configured to run a multimedia application and a telecommunication subsystem. The method includes determining telecom environment conditions, and selecting a configuration from a plurality of configurations. The selecting is based at least in part on the determined environmental conditions. The method also includes setting control parameters such as channel speed in the multimedia application and/or the telecommunication subsystem to cause the system to operate at the selected configuration, and operating the system at the selected configuration. The configuration are determined by simultaneously updating control parameters by a controller of both the multimedia application and the telecommunication subsystem.
    Type: Application
    Filed: November 21, 2007
    Publication date: May 21, 2009
    Applicant: Interuniversitair Microelektronica Centrum (IMEC)
    Inventor: Min Li
  • ANALOGUE-TO-DIGITAL CONVERTER AND METHOD FOR USING THE SAME
    Publication number: 20090128386
    Abstract: The present disclosure is related to an analogue-to-digital (A/D) converter (1) for converting an input signal (Vin) to a digital code representing said input signal. The A/D converter comprises a comparator (3) for comparing the input signal with a reference signal (VA), a search logic block (4) for determining the digital code and a digital-to-analogue converter (5) arranged for receiving input from the search logic block and for providing the reference signal to be applied to the comparator. The digital-to-analogue converter comprises at least a first portion implemented with equal capacitors (20). The ADC optionally further comprises a second portion implemented with binary weighted capacitors. The first portion is arranged for being controlled by a thermometer coded signal. The converter avoids charging-discharging of large capacitors during the search and therefore reduces the lost energy.
    Type: Application
    Filed: October 23, 2008
    Publication date: May 21, 2009
    Applicant: STICHTING IMEC NEDERLAND
    Inventors: Guy Meynants, Juan Santana, Richard van den Hoven
  • Microfluidic Device
    Publication number: 20090129952
    Abstract: A microfluidic device is described. The microfluidic device comprises at least one transport channel and at least one working chamber, wherein the at least one transport channel and the at least one working chamber are separated from each other by a common deformable wall. The at least one transport channel is for containing a transport fluid and the at least one working chamber is for containing a working fluid. The microfluidic device comprises at least one pair of electrodes for changing the pressure on the working fluid such that when the pressure on the working fluid is changed, the deformable wall deforms, resulting in a change of the cross-section of the at least one transport channel. The working chamber comprises a flexible wall different from the common deformable wall and at least one electrode of the at least one pair of electrodes is provided on the flexible wall.
    Type: Application
    Filed: November 19, 2008
    Publication date: May 21, 2009
    Applicant: Stichting IMEC Nederland
    Inventors: Mihai Patrascu, Mercedes Crego Calama, Martijn Goedbloed, Koray Karakaya
  • Methods of Forming a Semiconductor Device
    Publication number: 20090117750
    Abstract: The present disclosure relates to methods for forming a high-k gate dielectric, the methods comprising the steps of providing a semiconductor substrate, cleaning the substrate, performing a thermal treatment, and performing a high-k dielectric material deposition, wherein said thermal treatment step is performed in a non-oxidizing ambient, leading to the formation of a thin interfacial layer between said semiconductor substrate and said high-k dielectric material and wherein the thickness of said thin interfacial layer is less than 10 ?.
    Type: Application
    Filed: October 30, 2008
    Publication date: May 7, 2009
    Applicants: Interuniversitair Microelektronica Centrum (IMEC), Katholieke Universiteit Leuven, Taiwan Semiconductor Manufacturing Company, Ltd. (TSMC)
    Inventors: Hui OuYang, Jean-Luc Everaert, Laura Nyns, Rita Vos
  • Methods and systems for characterising and optimising immersion lithographic processing
    Patent number: 7528387
    Abstract: A method is provided for characterizing an immersion lithography process of a device using an immersion liquid. In order to study pre-soak and post-soak effects on the image performance of an immersion lithography process, the method includes determining at least one image performance characteristic as function of contact times between the immersion liquid and the device for a device illuminated in a dry lithography process and contacted with said immersion liquid prior and/or after said illumination. Based on the image performance characteristic, a lithography process characteristic is derived for the immersion lithography process.
    Type: Grant
    Filed: December 29, 2005
    Date of Patent: May 5, 2009
    Assignee: Interuniversitair Microelektronica Centrum (IMEC)
    Inventor: Ivan Pollentier
  • Method and apparatus for removing a liquid from a surface of a substrate
    Patent number: 7527698
    Abstract: A method and apparatus for removing a first liquid from a surface of a substrate is provided. A second liquid is supplied to at least part of a surface of a substrate having a rotary movement. The rotary movement has a center of rotation and an edge of rotation. The second liquid is directed from the center of rotation to the edge of rotation using a nozzle. A dry zone is created on the substrate as the position of the spray moves from the center of rotation to the edge of rotation. As a result, the first liquid and the second liquid are removed from the surface of the substrate.
    Type: Grant
    Filed: May 6, 2003
    Date of Patent: May 5, 2009
    Assignee: Interuniversitair Microelektronica Centrum (IMEC, VZW)
    Inventors: Frank Holsteyns, Marc Heyns, Paul W. Mertens
  • COMPOSITE SUBSTRATE
    Publication number: 20090107704
    Abstract: A composite substrate is disclosed. In one aspect, the substrate has a stretchable and/or flexible material. The substrate may further have patterned features embedded in the stretchable and/or flexible material. The patterned features have one or more patterned conducting layers.
    Type: Application
    Filed: January 5, 2009
    Publication date: April 30, 2009
    Applicants: Interuniversitair Microelektronica Centrum vzw (IMEC), Universiteit Gent
    Inventors: Jan Vanfleteren, Dominique Brosteaux, Fabrice Axisa
  • DESIGN OPTIMIZATION
    Publication number: 20090112344
    Abstract: A method for optimizing a design for a device is disclosed. Such an optimization is performed with respect to a predetermined metric, e.g. device speed, area, power consumption or yield. In one aspect, the method comprises obtaining a design for a device. The design comprises design components. The method also comprises determining from the design components at least one group of first design components that has a higher sensitivity to the predetermined metric than second design components. The first design components may be on the critical path in the design. The method further comprises tuning the first design components and the technology for manufacturing the first design components thus reducing the variability of the first design components and obtaining an optimized design with respect to the predetermined metric.
    Type: Application
    Filed: October 24, 2008
    Publication date: April 30, 2009
    Applicant: Interuniversitair Microelektronica Centrum vzw (IMEC)
    Inventors: Axel Nackaerts, Gustaaf Verhaegen, Paul Marchal
  • DETECTION OF CONTAMINATION IN EUV SYSTEMS
    Publication number: 20090103069
    Abstract: A sensor for sensing contamination in an application system is disclosed. In one aspect, the sensor comprises a capping layer. The sensor is adapted to cause a first reflectivity change upon initial formation of a first contamination layer on the capping layer when the sensor is provided in the system. The first reflectivity change is larger than an average reflectivity change upon formation of a thicker contamination layer on the capping layer and larger than an average reflectivity change upon formation of an equal contamination on the actual mirrors of the optics of the system.
    Type: Application
    Filed: September 23, 2008
    Publication date: April 23, 2009
    Applicant: Interuniversitair Microelektronica Centrum vzw (IMEC)
    Inventors: Rik Jonckheere, Anne-Marie Goethals, Gian Francesco Lorusso, Ivan Pollentier
  • Semiconductor cleaning solution
    Patent number: 7521408
    Abstract: The present invention recites a composition comprising a first compound and a second compound. The first compound has the chemical formula ( 1a), wherein m, n and o are independently from each other equal to 2 or 3; wherein p is equal to 1 or 2; R being a chemical group with the chemical formula (1a?), wherein q is equal to 1, 2 or 3; wherein R1, R2 and R3 are independently selected from the group consisting of hydrogen and an organic group. The second compound has the chemical formula (1c). Metal ions can be present in the solution or in an external medium being contacted with the solution. The present invention can be used for cleaning a semiconductor substrate.
    Type: Grant
    Filed: December 12, 2005
    Date of Patent: April 21, 2009
    Assignees: Interuniversitair Microelektronica Centrum ( IMEC), Air Products and Chemicals Inc.
    Inventors: Rita Vos, Paul Mertens, Bernd Kolbesen, Albrecht Fester, Oliver Doll
  • Selective removal of rare earth based high-k materials in a semiconductor device
    Patent number: 7521369
    Abstract: A method is disclosed for the selective removal of rare earth based high-k materials such as rare earth scandate high-k materials (e.g. DyScO3) over silicon or silicon dioxide. As an example Dy and Sc comprising high-k materials are used as a high-k material in gate stacks of a semiconductor device. The selective removal and etch of this high-k material is very difficult since Dy and Sc (and their oxides) are difficult to etch. The etching could however be easily stopped on them. For patterning of the metal gates comprising TiN and TaN on top of rare earth based high-k layer a chlorine-containing gases (Cl2 and BCl3) can be used since titanium ant tantalum chlorides are volatile and reasonable selectivity to other material present on the wafer (Si, SiO2) can be obtained. The Dy and Sc chlorides are not volatile, but they are water soluble.
    Type: Grant
    Filed: October 22, 2007
    Date of Patent: April 21, 2009
    Assignee: Interuniversitair Microelektronica Centrum (IMEC)
    Inventors: Denis Shamiryan, Marc Demand, Vasile Paraschiv
  • Method for forming germanides and devices obtained thereof
    Patent number: 7517765
    Abstract: The present invention discloses a method for forming germanides on substrates with exposed germanium and exposed dielectric(s) topography, thereby allowing for variations in the germanide forming process. The method comprises the steps of depositing nickel on a substrate having topography, performing a first thermal step to convert substantially all deposited nickel in regions away from the topography into a germanide, selectively removing the unreacted nickel, and performing a second thermal step to lower the resistance of formed germanide.
    Type: Grant
    Filed: September 8, 2006
    Date of Patent: April 14, 2009
    Assignees: Interuniversitair Microelektronica Centrum (IMEC), Intel Corporation (INTEL), Katholieke Universiteit Leuven (KUL)
    Inventors: David P. Brunco, Karl Opsomer, Brice De Jaeger
  • MOSFET DEVICES AND METHODS FOR MAKING THEM
    Publication number: 20090090971
    Abstract: A semiconductor device is disclosed. The device comprises a first MOSFET transistor. The transistor comprises a substrate, a first high-k dielectric layer upon the substrate, a first dielectric capping layer upon the first high-k dielectric, and a first gate electrode made of a semiconductor material of a first doping level and a first conductivity type upon the first dielectric capping layer. The first dielectric capping layer comprises Scandium.
    Type: Application
    Filed: September 18, 2008
    Publication date: April 9, 2009
    Applicants: Interuniversitair Microelektronica Centrum vzw (IMEC), TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Hsun Chang, Lars-Ake Ragnarsson
  • SEMICONDUCTOR DEVICE HAVING INTERCONNECTED CONTACT GROUPS
    Publication number: 20090091011
    Abstract: The present invention is related to a method of producing a semiconductor device and the resulting device. The method is suitable in the first place for producing high power devices, such as High Electron Mobility Transistors (HEMT), in particular HEMT-devices with multiples source-gate-drain groups or multiple base bipolar transistors. According to the method, the interconnect between the source contacts is not produced by air bridge structures, but by etching vias through the semiconductor layer directly to the ohmic contacts and applying a contact layer on the backside of the device.
    Type: Application
    Filed: September 29, 2008
    Publication date: April 9, 2009
    Applicant: Interuniversitair Microelektronica Centrum (IMEC)
    Inventors: Johan Das, Wouter Ruythooren
  • Methods for Forming Metal-Germanide Layers and Devices Obtained Thereby
    Publication number: 20090085167
    Abstract: The present invention is related to the field of semiconductor processing and, more particularly, to the formation of low resistance layers on germanium substrates. One aspect of the present invention is a method comprising: providing a substrate on which at least one area of a germanium layer is exposed; depositing over the substrate and said germanium area a metal, e.g., Co or Ni; forming over said metal, a capping layer consisting of a silicon oxide containing layer, of a silicon nitride layer, or of a tungsten layer, preferably of a SiO2 layer; then annealing for metal-germanide formation; then removing selectively said capping layer and any unreacted metal, wherein the temperature used for forming said capping layer formation is lower than the annealing temperature.
    Type: Application
    Filed: August 29, 2008
    Publication date: April 2, 2009
    Applicant: Interuniversitair Microelektronica Centrum vzw (IMEC)
    Inventors: David Brunco, Marc Meuris
  • SENSOR DEVICE COMPRISING ELONGATED NANOSTRUCTURES
    Publication number: 20090085071
    Abstract: A sensor device is provided for determining the presence and/or amount of at least one component in a fluid. The sensor device comprises at least one sensor unit, the at least one sensor unit comprising at least one elongated nanostructure and a dielectric material surrounding the at least one elongated nanostructure. The dielectric material is such that it is selectively permeable for one of the at least one component and is capable of sensing the component permeated through the dielectric material. The sensor device according to preferred embodiments shows good sensitivity and good mechanical strength. The present invention furthermore provides a method for manufacturing such a sensor device and a method for determining the presence and/or amount of at least one component in a fluid using such a sensor device.
    Type: Application
    Filed: July 18, 2008
    Publication date: April 2, 2009
    Applicant: Stichting IMEC Nederland
    Inventors: Sywert H. Brongersma, Peter Offermans
  • Multilingual block
    Patent number: D590442
    Type: Grant
    Filed: April 28, 2005
    Date of Patent: April 14, 2009
    Assignee: Interuniversitair Microelektronica Centrum (IMEC)
    Inventor: Sara Jones