Patents Assigned to IMEC
  • Publication number: 20090027681
    Abstract: In one aspect of the invention, a method or apparatus is described for determining concentration(s) of one or more analytes in a sample using plasmonic excitations. In another aspect, a method relates to designing systems for such concentration determination, wherein metallic nanostructures are used in combination with local electrical detection of such plasmon resonances via a semiconducting photodetector. In certain aspects, the method exploits the coupling of said metallic nanostructure(s) to a semiconducting photodetector, said detector being placed in the “metallic structure's” near field. Surface plasmon excitation can be transduced efficiently into an electrical signal through absorption of light that is evanescently coupled or scattered in a semiconductor volume. This local detection technique allows the construction of sensitive nanoscale bioprobes and arrays thereof.
    Type: Application
    Filed: July 24, 2008
    Publication date: January 29, 2009
    Applicants: Interuniversitair Microelektronica Centrum (IMEC), Katholieke Universiteit Leuven, K.U. Leuven R&D
    Inventors: Iwijn De Vlaminck, Pol Van Dorpe, Liesbet Lagae
  • Publication number: 20090031268
    Abstract: A method for determining an estimate of statistical properties of an electronic system comprising individual components subject to manufacturing process variability is disclosed. In one aspect, the method comprises obtaining statistical properties of the performance of individual components of the electronic system, obtaining information about execution of an application on the system, simulating execution of the application based on the obtained information about execution of the application on the system for a simulated electronic system realization constructed by selecting individual components with the obtained statistical properties determining the delay and energy of the electronic system, and determining the statistical properties of the delay and energy of the electronic system.
    Type: Application
    Filed: June 23, 2008
    Publication date: January 29, 2009
    Applicant: Interuniversitair Microelektronica Centrum VZW (IMEC)
    Inventors: Miguel Miranda, Bart Dierickx, Ankur Anchlia
  • Publication number: 20090020821
    Abstract: A dual workfunction semiconductor device which comprises a first and second control electrode comprising a metal-semiconductor compound, e.g. a silicide or a germanide, and a dual workfunction semiconductor device thus obtained are disclosed. In one aspect, the method comprises forming a blocking region for preventing diffusion of metal from the metal-semiconductor compound of the first control electrode to the metal-semiconductor compound of the second control electrode, the blocking region being formed at a location where an interface between the first and second control electrodes is to be formed or is formed. By preventing metal to diffuse from the one to the other control electrode the constitution of the metal-semiconductor compounds of the first and second control electrodes may remain substantially unchanged during e.g. thermal steps in further processing of the device.
    Type: Application
    Filed: June 24, 2008
    Publication date: January 22, 2009
    Applicant: Interuniversitair Microelektronica Centrum vzw (IMEC)
    Inventors: Stefan Jakschik, Jorge Adrian Kittl, Marcus Johannes Henricus van Dal, Anne Lauwers, Masaaki Niwa
  • Publication number: 20090020786
    Abstract: A method for forming a semiconductor device on a substrate having a first major surface lying in a plane and the semiconductor device are disclosed. In one aspect, the method comprises, after patterning the substrate to form at least one structure extending from the substrate in a direction substantially perpendicular to a major surface of the substrate, forming locally modified regions at locations in the substrate not covered by the structure, thus locally increasing etching resistance of these regions. Forming locally modified regions may prevent under-etching of the structure during further process steps in the formation of the semiconductor device.
    Type: Application
    Filed: June 24, 2008
    Publication date: January 22, 2009
    Applicants: Interuniversitair Microelektronica Centrum vzw (IMEC), STMicroelectronics (Crolles2) SAS
    Inventors: Damien Lenoble, Nadine Collaert
  • Publication number: 20090024378
    Abstract: A method of determining the behavior of an electronic system comprising electronic components under variability is disclosed. In one aspect, the method comprises for at least one parameter of at least one of the electronic components, showing variability defining a range and a population of possible values within the range, each possible value having a probability of occurrence, thereby defining an input domain. The method further comprises selecting inputs randomly from the input domain, wherein the probability to sample (PTS) is obtained from the probability of occurrence (PTOIR). The method further comprises performing simulation to obtain the performance parameters of the electronic system, thereby defining an output domain sample.
    Type: Application
    Filed: June 23, 2008
    Publication date: January 22, 2009
    Applicant: Interuniversitair Microelektronica Centrum vzw (IMEC)
    Inventors: Bart Dierickx, Miguel Miranda
  • Publication number: 20090019847
    Abstract: The current invention provides a stepping actuator, achieving large range up to ±35 ?m with low operating voltages of 15V or lower and large output forces of up to ±110 ?N. The actuator has an in-plane-angular deflection conversion which allows achieving step sizes varying from few nanometers to few micrometers with a minor change in the design. According to certain embodiments of the invention, the stepping actuator comprises a geometrical structure with a displacement magnification ratio of between 0.15 and 2 at operating voltages of 15V or lower. The present invention also provides a method for forming such stepping actuators.
    Type: Application
    Filed: July 14, 2008
    Publication date: January 22, 2009
    Applicants: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC), KATHOLIEKE UNIVERSITEIT LEUVEN, K.U. LEUVEN R&D
    Inventors: Mehmet Akif Erismis, Hercules Pereira Neves, Chris Van Hoof, Robert Puers
  • Publication number: 20090016340
    Abstract: The present disclosure relates to a system comprising at least a first and a second essentially analogue portion and an essentially digital portion, the analogue portions forming a part of a unidirectional circular network. First communication means is provided between the digital portion and the first analogue portion. Second communication means is provided between the first and second analogue portions. The first and second communication means are configurable for establishing communication between the digital portion and the second analogue portion. The first and second communication means are arranged to determine if a packet communicated over the first or second communication means is of interest for any of the analogue portions.
    Type: Application
    Filed: September 21, 2006
    Publication date: January 15, 2009
    Applicants: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC), SAMSUNG ELECTRONICS CO. LTD.
    Inventor: Wolfgang Eberle
  • Publication number: 20090011604
    Abstract: Preferred embodiments provide a method for removing at least part of a copper comprising layer from a substrate, the substrate comprising at least a copper comprising surface layer. The method comprises in a first reaction chamber converting at least part of the copper comprising surface layer into a copper halide surface layer and in a second reaction chamber removing at least part of the copper halide surface layer by exposing it to a photon comprising ambient, thereby initiating formation of volatile copper halide products. During exposure to the photon comprising ambient, the method furthermore comprises removing the volatile copper halide products from the second reaction chamber to avoid saturation of the volatile copper halide products in the second reaction chamber. The method according to preferred embodiments may be used to pattern copper comprising layers.
    Type: Application
    Filed: June 27, 2008
    Publication date: January 8, 2009
    Applicants: Interuniversitair Microelektronica Centrum vzw (IMEC), Katholieke Universiteit Leuven, K.U.LEUVEN R&D
    Inventor: Dries Dictus
  • Publication number: 20090011147
    Abstract: The preferred embodiments provide a method for forming at least one metal comprising elongated nanostructure on a substrate. The method comprises exposing a metal halide compound surface to a photon comprising ambient to initiate formation of the at least one metal comprising elongated nanostructure. The preferred embodiments also provide metal comprising elongated nanostructures obtained by the method according to preferred embodiments.
    Type: Application
    Filed: June 27, 2008
    Publication date: January 8, 2009
    Applicants: Interuniversitair Microelektronica Centrum vzw (IMEC), Katholieke Universiteit Leuven, K.U.LEUVEN R&D
    Inventor: Dries Dictus
  • Publication number: 20090012759
    Abstract: In order to design on-chip interconnect structures in a flexible way, a CAD approach is advocated in three dimensions, describing high frequency effects such as current redistribution due to the skin-effect or eddy currents and the occurrence of slow-wave modes. The electromagnetic environment is described by a scalar electric potential and a magnetic vector potential. These potentials are not uniquely defined, and in order to obtain a consistent discretization scheme, a gauge-transformation field is introduced. The displacement current is taken into account to describe current redistribution and a small-signal analysis solution scheme is proposed based upon existing techniques for static fields in semiconductors. In addition methods and apparatus for refining the mesh used for numerical analysis is described.
    Type: Application
    Filed: September 5, 2008
    Publication date: January 8, 2009
    Applicant: Interuniversitair Microelektronica Centrum (IMEC)
    Inventors: Peter Meuris, Wim Schoenmaker, Wim Magnus
  • Publication number: 20090004975
    Abstract: An electrical device comprises analog conversion circuitry having an input and an output. The electrical device is essentially provided for converting a first input signal within a first frequency range applied to the input to a first output signal within a second frequency range different from the first frequency range at the output. The electrical device further comprises a signal adding means for adding at least a portion of the first output signal as second input signal to the first input signal. The analog conversion circuitry is also capable of converting the second input signal, which is within the second frequency range, back to the first frequency range. Additionally, a characteristic deriving means is provided for deriving at least one characteristic of the electrical device from the frequency converted second input signal, which appears at the output of the analog conversion circuitry.
    Type: Application
    Filed: October 30, 2007
    Publication date: January 1, 2009
    Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC)
    Inventor: Jan Craninckx
  • Publication number: 20090002212
    Abstract: The invention relates to an N-bit digital-to-analogue converter (DAC) system, comprising—a DAC unit comprising an N-bit master DAC and a slave DAC, yielding a master DAC unit output signal and a slave DAC unit output signal, respectively, said N-bit master DAC having an output step size,—an adder unit combining the master DAC unit output signal and the slave DAC unit output signal, and—a means for storing correction values for at least the master DAC, said correction values being used by the slave DAC, whereby the DAC system is arranged for master DAC output corrections with a size in absolute value higher than half of the output step size.
    Type: Application
    Filed: May 2, 2005
    Publication date: January 1, 2009
    Applicants: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC), UNIVERSITEIT HASSELT
    Inventor: Ward De Ceuninck
  • Publication number: 20090004685
    Abstract: The present disclosure is related to an interface device for providing access to a network to be monitored. The interface device includes a plurality of elements, the elements being sensors and/or actuators. A selection means is provided for selecting a subset of elements among the plurality of elements, each element of the subset being arranged for outputting and/or receiving a signal. A local memory is provided for storing the subset.
    Type: Application
    Filed: February 28, 2008
    Publication date: January 1, 2009
    Applicants: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC), KATHOLIEKE UNIVERSITEIT LEUVEN
    Inventors: Roeland Huys, Wolfgang Eberle, Carmen Bartic
  • Publication number: 20090001483
    Abstract: Ni3Si2 FUSI gates can be formed inter alia by further reaction of NiSi/Ni2Si gate stacks. Ni3Si2 behaves similarly to NiSi in terms of work function values, and of modulation with dopants on SiO2, in contrast to Ni-rich silicides which have significantly higher work function values on HfSixOy and negligible work function shifts with dopants on SiO2. Formation of Ni3Si2 can applied for applications targeting NiSi FUSI gates, thereby expanding the process window without changing the electrical properties of the FUSI gate.
    Type: Application
    Filed: February 26, 2008
    Publication date: January 1, 2009
    Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC)
    Inventor: Jorge Adrian Kittl
  • Publication number: 20080314429
    Abstract: The present disclosure relates to thermoelectric generators (TEGs) and more specifically to TEGs operated with a heat source having a high thermal resistance, more specifically to TEGs operated under conditions of non-constant heat flow and non-constant temperature difference between a hot plate and a cold plate. A thermoelectric generator for connection between a heat source and a heat sink comprises a thermopile unit, the thermopile unit comprising at least one thermopile stage, each thermopile stage comprising a number of thermocouples each having a couple of thermocouple legs, the thermocouple legs being provided in between a hot junction plane and a cold junction plane.
    Type: Application
    Filed: February 8, 2008
    Publication date: December 25, 2008
    Applicant: STICHTING IMEC NEDERLAND
    Inventor: Vladimir Leonov
  • Publication number: 20080315125
    Abstract: A method and system for measuring contamination of a lithographic element is disclosed. In one aspect, the method comprises providing a first lithographical element in a process chamber. The method further comprises providing a second lithographical element in the process chamber. The method further comprises covering part of the first lithographical element providing a reference region. The method further comprises providing a contaminant in the process chamber. The method further comprises redirecting an exposure beam via the test region of the first lithographical element towards the second lithographical element whereby at least one of the lithographical elements gets contaminated by the contaminant. The method further comprises measuring the level of contamination of the at least one contaminated lithographical element in the process chamber.
    Type: Application
    Filed: August 28, 2007
    Publication date: December 25, 2008
    Applicant: Interuniversitair Microelektronica Centrum (IMEC) vzw
    Inventors: Gian Francesco Lorusso, Rik Jonckheere, Anne-Marie Goethals, Jan Hermans
  • Publication number: 20080319298
    Abstract: The present invention provides an electronic device for sensing and/or actuating, the electronic device comprising at least one microneedle (10) on a substrate (1), each of the microneedles (10) comprising at least one channel (7, 8) surrounded by an insulating layer (6). The present invention also provides a method for making such an electronic device for sensing and/or actuating.
    Type: Application
    Filed: March 6, 2008
    Publication date: December 25, 2008
    Applicants: Interuniversitair Microelektronica Centrum (IMEC), Katholieke Universiteit Leuven, K.U. Leuven R&D
    Inventors: Roeland Huys, Carmen Bartic, Josine Loo
  • Publication number: 20080317062
    Abstract: A method of configuring communication with a plurality of non-overlapping channels and between communication units with first communication units and second communication units is disclosed. The first communication units are privileged with respect to the second communication units, the second communication units having dynamically adaptable transceivers enabling channel switching, at least one of the second communication units being within the communication range of one of the first communication units. In one aspect, the method comprises determining information on the availability of the channels of the communication system for communication by the second communication units, based at least in part on information regarding whether the first communication units are active or not on the channels.
    Type: Application
    Filed: June 6, 2008
    Publication date: December 25, 2008
    Applicants: Interuniversitair Microelektronica Centrum vzw (IMEC), Katholieke Universiteit Leuven
    Inventors: Michael Timmers, Antoine Dejonghe
  • Patent number: 7468328
    Abstract: The present invention relates to methods for producing a patterned thin film on a substrate. The method comprises the spatially and possibly also temporally modulation of nucleation modes of film growth during the growth of patterned thin films. The nucleation modes are modulated between no or substantially no nucleation, 2D nucleation, and 3D nucleation. The modulation is obtained by adjusting the surface treatment spatially applied over regions of the substrate, the growth conditions for the thin film materials used, and/or the specific thin film materials used. The growth conditions typically comprise the substrate temperature and the deposition flux. The modulation allows for spatially varying the interaction between the substrate material and the thin film materials deposited.
    Type: Grant
    Filed: July 6, 2004
    Date of Patent: December 23, 2008
    Assignee: Interuniversitair Microelektronica Centrum (IMEC)
    Inventors: Paul Heremans, Dimitri Janssen, Sören Steudel, Stijn Verlaak
  • Publication number: 20080310456
    Abstract: The present disclosure provides a system for receiving signals over a power line distribution. Typically, problems of noise and interference are being solved at the receiver side. Systems of the present disclosure, however, are not limited to the receiver-side solution. Systems according to the present disclosure may also be used at the transmitter side. The receiver comprises a high pass filter, a preselect crossover filter, and an analog front-end receiver architecture.
    Type: Application
    Filed: April 10, 2008
    Publication date: December 18, 2008
    Applicants: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC), UNIVERSITEIT GENT
    Inventors: Johan Bauwelinck, Els De Backer, Cedric Melange, Jan Vandewege