Abstract: A widely tunable laser structure with at least two different sampled or superstructure gratings is provided. The widely tunable laser only requires as much tuning currents as gratings. In the case of two gratings, two tuning currents, instead of 3 tuning currents in a typical laser, are needed. Alternatively, the laser structure can be denoted a sampled or superstructure grating tunable laser with wide tunability characteristics, with a limited amount of needed tuning parameters, e.g., two currents.

Abstract: A semiconductor device is disclosed. In one aspect, the device has a first and second active layer on a substrate, the second active layer having a higher bandgap than the first active layer, being substantially Ga-free and including at least Al?. The device has a gate insulating layer on a part of the second active layer formed by thermal oxidation of a part of the second active layer. The device has a gate electrode on at least a part of the gate insulating layer and a source electrode and drain electrode on the second active layer. The device has, when in operation and when the gate and source electrode are at the same voltage, a two-dimensional electron gas layer between the first and second active layer only outside the location of the gate electrode and not at the location of the gate electrode.

Abstract: The present invention provides a conjugated polymer with provided thereon at least one molecular imprinted polymer (MIP) and a method for preparing such a polymer. The conjugate polymer provided with at least one MIP according to the invention combines both transducer properties and selectivity properties in one single material. Therefore, it is particularly suitable for use in chemo- or bio-sensors. Furthermore, the conjugate polymer provided with at least one MIP may be used in electronic devices and in chromatography, molecular recognition, selective sample enrichment or in catalysis.

Abstract: A method for designing an ESD protected analog circuit is described. The method includes creating an analog circuit design comprising a plurality of interconnected functional components and circuit-level ESD protection components with predetermined electric properties for achieving a predetermined analog performance during normal operation of the circuit as well as a predetermined ESD robustness during an ESD event on the circuit. At least one ESD event is simulated on the analog circuit design to identify at least one weak spot in the circuit. Component-level ESD protection components are added into the analog circuit design around each identified weak spot to reduce failure of the weak spot during an ESD event.

Abstract: A thickness shear mode (TSM) resonator is described, comprising a diamond layer. The diamond layer is preferably a high quality diamond layer with at least 90% sp3 bonding or diamond bonding. A method for manufacturing such a resonator is also described. The thickness shear mode resonator according to embodiments described herein may advantageously be used in biosensor application and in electrochemistry applications.

Abstract: A sensing device for detecting an analyte is disclosed. In one aspect, the device includes at least one geometrical structure and at least two clamps provided for clamping the at least one geometrical structure on at least two ends of the geometrical structure. The at least one geometrical structure has at least one chemical responsive layer being absorbent or adsorbent for the analyte, and a support structure provided for at least partly supporting the at least one chemical responsive layer. The at least one chemical responsive layer has a varying effective spring constant which changes upon absorption or adsorption of the analyte.

Abstract: A method is disclosed for determining the inactive doping concentration of a semiconductor region using a PMOR method. In one aspect, the method includes providing two semiconductor regions having substantially the same known as-implanted concentration but known varying junction depths. The method includes determining on one of these semiconductor regions the as-implanted concentration. The semiconductor regions are then partially activated. PMOR measures are then performed on the partially activated semiconductor regions to measure (a) the signed amplitude of the reflected probe signal as function of junction depth and (b) the DC probe reflectivity as function of junction depth. The method includes extracting from these measurements the active doping concentration and then calculating the inactive doping concentration using the determined total as-implanted concentration and active doping concentration.

Abstract: A slanted grating coupler for coupling a radiation beam between a waveguide lying substantially in a plane on a substrate and an optical element outside that plane is provided, whereby the slanted grating coupler has a good coupling efficiency for medium or low index contrast material systems. Furthermore, a method for manufacturing the slanted grating coupler is provided. The slanted grating coupler comprises a plurality of slanted slots extending through the waveguide core and being arranged successively in the propagation direction of the waveguide. In at least part of the coupling region, the size of the slanted slots in a lateral direction, being a direction within the waveguide plane and perpendicular to the propagation direction of the waveguide, is smaller than the lateral size of the waveguide core. Successive slots are displaced with respect to each other in the lateral direction.

Abstract: In the present disclosure a device for sensing and/or actuation purposes is presented in which microstructures (20) comprising shafts (2) with different functionality and dimensions can be inserted in a modular way. That way, out-of-plane connectivity, mechanical clamping between the microstructures (20) and a substrate (1) of the device, and electrical connection between electrodes (5) on the microstructures (20) and the substrate (1) can be realized. Connections to external circuitry can be realised. Microfluidic channels (10) in the microstructures (20) can be connected to external equipment. A method to fabricate and assemble the device is provided.

Abstract: A method for manufacturing a stretchable electronic device is disclosed. In one aspect, the device comprises at least one electrically conductive channel connecting at least two components of the device. The method comprises forming the channel by laser-cutting a flexible substrate into a predetermined geometric shape.

Abstract: In an embodiment of the invention, an amorphous phase dielectric material is selectively formed over a substrate. The amorphous phase dielectric material is then converted into a crystalline phase dielectric material.

Abstract: The present disclosure relates to the field of organic optoelectronics. More particularly, the present disclosure relates to photovoltaic structures and to methods to produce the same. One aspect of the disclosure is a photovoltaic structure comprising: an electron acceptor material, and an electron donor material, wherein the electron donor material comprises: a host material, and a guest material, wherein the energy of the lowest excited singlet state of the guest is smaller than the energy of lowest excited singlet state of the host, wherein the fluorescence emission spectrum of the host overlaps with at least part of the absorption spectrum of the guest and wherein the energy of the lowest excited triplet state of the guest is larger than the energy of the lowest excited triplet state of the host.

Abstract: An atomic force microscopy probe configuration and a method for manufacturing the same are disclosed. In one aspect, the probe configuration includes a cantilever, and a planar tip attached to the cantilever. The cantilever only partially overlaps the planar tip, and extends along a longitudinal direction thereof. The planar tip is of a two-dimensional geometry having at least one corner remote from the cantilever, which corner during use contacts a surface to be scanned.

Abstract: A method is provided for making pure-silica-zeolite films useful as low-k material, specifically, more hydrophobic, homogeneous and with absence of cracks. The method utilizes a UV cure; preferably the UV cure is performed at temperatures at higher than the deposition temperature. The UV-assisted cure removes the organic template promoting organic functionalization and silanol condensation, making the silica-zeolite films more hydrophobic. Moreover, the zeolite material is also mechanically stronger and crack-free. The method can be used to prepare pure-silica-zeolite films more suitable as low-k materials in semiconductor processing.

Abstract: A method for the production of a photovoltaic device, for instance a solar cell, is disclosed. In one aspect, the method comprises providing a substrate having a front main surface and a rear surface. The method further comprises depositing a dielectric layer on the rear surface, wherein the dielectric layer has a thickness larger than about 100 nm. The method further comprises depositing a passivation layer comprising hydrogenated SiN on top of the dielectric layer and forming back contacts through the dielectric layer and the passivation layer. In another aspect, corresponding photovoltaic devices, for instance solar cell devices, are also disclosed.

Abstract: Semiconductor process technology and devices are provided, including a method for forming a high quality group III nitride layer on a silicon substrate and to a device obtainable therefrom. According to the method, a pre-dosing step is applied to a silicon substrate, wherein the substrate is exposed to at least 0.01 ?mol/cm2 of one or more organometallic compounds containing Al, in a flow of less than 5 ?mol/min. The preferred embodiments are equally related to the semiconductor structure obtained by the method, and to a device comprising said structure.

Abstract: A hybrid energy scavenger comprising a thermopile unit and photovoltaic cells is provided, wherein the hybrid energy scavenger may generate a good output power when operating in conditions of small temperature difference between a heat source and a heat sink, and/or either receiving the heat from a heat source with high thermal resistance or dissipating it into a heat sink with high thermal resistance such as a human body or a body of any other endotherm, or a fluid such as air, and wherein the photovoltaic cells are part of a heat dissipating structure for connection to the heat sink.

Abstract: Non-volatile memory devices are disclosed. In a first example non-volatile memory device, programming and erasing of the memory device is performed through the same insulating barrier without the use of a complex symmetrical structure. In the example device, programming is accomplished by tunneling negative charge carriers from a charge supply region to a charge storage region. Further in the example device, erasing is accomplished by tunneling positive carriers from the charge supply region to the charge storage region. In a second example non-volatile memory device, a charge storage region with spatially distributed charge storage region is included. Such a charge storage region may be implemented in the first example memory device or may be implemented in other memory devices. In the second example device, programming is accomplished by tunneling negative charge carriers from a charge supply region to the charge storage region.

Abstract: The present invention provides a TEG device comprising a first unit comprising a thermopile unit and a second unit comprising a cold plate and/or a radiator. One of the first and second units is adapted for being embedded or implanted into a body, while the other of the first and second units is adapted for being placed at the outer surface of the body, i.e. in a fluid. The first and second units are adapted for being thermally connected to each other through the surface between the body and the fluid when in use.

Abstract: A method and system for retrieving a desired user data symbol sequence from a received signal are disclosed. In one embodiment, the method includes i) receiving a channel modified version of a transmitted signal comprising a plurality of user data symbol sequences, each being encoded with a user specific known code, ii) determining an equalization filter directly and in a deterministic way from the received signal and iii) applying the equalization filter on the received signal to thereby retrieve the transmitted signal.