Abstract: A method of determining IQ imbalance introduced on an RF multicarrier signal received via a channel on a direct conversion analog receiver is disclosed. In one embodiment, the method comprises i) receiving a training signal on the receiver, ii) demodulating the training signal on the receiver, iii) estimating a first frequency domain channel characteristic of the channel based on the demodulated training signal, iv) defining a predetermined relationship between a corrected frequency domain channel characteristic of the channel and the first channel characteristic, the predetermined relationship comprising at least one IQ imbalance parameter, and v) determining the at least one IQ imbalance parameter such that the corrected channel characteristic satisfies a channel constraint.

Abstract: The present invention provides a method and device for determining, in a non-destructive way, carrier concentration level and junction depth in a semiconductor substrate, independent from each other, during a single measurement.

Abstract: A technique is described for the preparation of polymers according to a process in which the starting compound of formula (I) is polymerized in the presence of a base in an organic solvent. No end chain controlling agents are required during the polymerisation to obtain soluble precursor polymers. The precursor polymer such obtained comprises structural units of the formula (II). In a next step, the precursor polymer (II) is subjected to a conversion reaction towards a soluble or insoluble conjugated polymer by thermal treatment. The arylene or heteroarylene polymer comprises structural units of the formula III. In this process the dithiocarbamate group acts as a leaving group and permits the formation of a precursor polymer of structural formula (II), which has an average molecular weight from 5000 to 1000000 Dalton and is soluble in common organic solvents. The precursor polymer with structural units of formula (II) is thermally converted to the conjugated polymer with structural formula (III).

Abstract: The present invention is related to a a device and corresponding methods for generating an oscillating signal. The device comprises a means for providing a current of spin polarised charge carriers, a magnetic, e.g. ferromagnetic, excitable layer adapted for receiving the generated current of spin polarised charge carriers thus generating an oscillating signal with a frequency and an integrated means for interacting with said magnetic, e.g. ferromagnetic, excitable layer such that a selection of said oscillation frequency is achieved. No external field needs to be applied to select or tune the frequency. Different types of integrated means can be used, such as e.g. means inducing mechanical stress in the magnetic, e.g. ferromagnetic, excitable layer, means inducing exchange bias interactions and means inducing magnetostatic interactions.

Abstract: A new MOSFET device is described comprising a metal gate electrode, a gate dielectric and an interfacial layer. The electrostatic potential at an interface between the gate electrode and the gate dielectric of a MOSFET device can be controlled by introducing one or more interfacial layer(s) of a dielectric material, at the monolayer(s) level (i.e., preferably two monolayers), between the gate electrode and the gate dielectric. A method for its manufacture is also provided and its applications.

Abstract: A signal generator for generating signals that are spaced ?/X rad apart, where X is an integer. The signal generator includes at least one delay cell with a delay that approximately corresponds to a phase shift ?/X rad for a given signal. The signal generator also includes at least one phase detection system receiving at least two signals with a phase difference of approximately ?/2 rad with respect to one another from said at least one delay cell and generating a feedback signal that is communicated to the at least one delay cell to adjust the phase relationship of the at least two signals. Such signal generators are used in radio frequency up-converters or down-converters.

Abstract: Methods of forming semiconductor devices with a layered structure of thin and well defined layer of activated dopants, are disclosed. In a preferred method, a region in a semiconductor substrate is amorphized, after which the region is implanted with a first dopant at a first doping concentration. Then a solid phase epitaxy regrowth step is performed on a thin layer of desired thickness of the amorphized region, in order to activate the first dopant only in this thin layer. Subsequently, a second dopant is implanted in the remaining amorphous region at a second doping concentration. Subsequent annealing of the substrate activates the second dopant only in said remaining region, so a very abrupt transition between dopant characteristics of the thin layer with first dopant and the region with the second dopant is obtained.

Abstract: A semiconductor device is disclosed. The device has a first and second electrode formed in a semiconductor substrate. The first and second electrode are separated from each other by a semiconductor region. and the device also includes a third electrode for controlling conductivity of the semiconductor region. At least one of the first and second electrodes forms a rectifying contact with the semiconductor region. The rectifying contact has a potential barrier. The semiconductor region is uniformly doped, at least in a direction between the first and the second electrodes, to have a doping level higher than the doping level of the semiconductor substrate and so as to, in operation, induce an image-force mechanism for lowering the potential barrier of the at least one rectifying contact.

Abstract: A slanted grating coupler for coupling a radiation beam between a waveguide lying substantially in a plane on a substrate and an optical element outside that plane is provided, whereby the slanted grating coupler has a good coupling efficiency for medium or low index contrast material systems. Furthermore, a method for manufacturing the slanted grating coupler is provided. The slanted grating coupler comprises a plurality of slanted slots extending through the waveguide core and being arranged successively in the propagation direction of the waveguide. In at least part of the coupling region, the size of the slanted slots in a lateral direction, being a direction within the waveguide plane and perpendicular to the propagation direction of the waveguide, is smaller than the lateral size of the waveguide core. Successive slots are displaced with respect to each other in the lateral direction.

Abstract: One inventive aspect relates to a reconfigurable cavity resonator. The resonator comprises a cavity delimited by metallic walls. The resonator further comprises a coupling device for coupling an electromagnetic wave into the cavity. The resonator further comprises a tuning element for tuning a resonance frequency at which the electromagnetic wave resonates in the cavity. The tuning element comprises one or more movable micro-electromechanical elements with an associated actuation element located in their vicinity for actuating each of them between an up state and a down state. The movable micro-electromechanical elements at least partially have a conductive surface and are mounted within the cavity.

Abstract: In one aspect, a method of operating a wireless system is disclosed. The method comprises allocating each video packet to a plurality of user specific priority queues. The method further comprises assigning each of the queues to a video quality layer. The method further comprises selectively dropping of one or more of video packets in cases of network congestion based on the video quality layer information.

Abstract: In order to prevent vehicle body of a truck-loader type from causing undesirable vibrations and noises during its running, improvement is effected on its construction, so as to reduce and absorb vibrations and noises. For solving such problem, a truck-roller 1 to be pivotally supported on the truck frame b which is mounted on both left and right sides of the vehicle body a of the truck-loader type vehicle is shaped individually and separately in its inner wheel 1a and outer wheel 1b; then, these inner wheel 1a and outer wheel 1b are formed in a spacer D between an outer peripheral surface of the inner wheel 1a and an inner peripheral surface of the outer wheel 1b, to thereby be assembled into the truck-roller 1. In this way, undesirable vibrations are absorbed by the elastic material 2 filled in the spacer D.

Abstract: One inventive aspect relates to a system and method for performing communication between a transmitting device and a receiving device along a communication path. The transmit device and the receive device each have at least one antenna. At least one of the devices has a plurality of antennas. The method comprises determining first information about the communication path. The method further comprises determining second information about the desired performance parameters of the communication. The method further comprises selecting based on the first and second information a mode of communication from a predetermined set of communication modes. The set includes a Single Input Single Output (SISO) and at least one Multiple Input Multiple Output (MIMO) communication scheme. The method further comprises performing communication in accordance with the selected mode.

Abstract: A method is provided for producing a thin substrate with a thickness below 750 microns, comprising providing a mother substrate, the mother substrate having a first main surface and a toughness; inducing a stress with predetermined stress profile in at least a portion of the mother substrate, said portion comprising the thin substrate, the induced stress being locally larger than the toughness of the mother substrate at a first depth under the main surface; such that the thin substrate is released from the mother substrate, wherein the toughness of the mother substrate at the first depth is not lowered prior to inducing the stress. The method can be used in the production of, for example, solar cells.

Abstract: The present invention provides a silane molecule which combines pre-activated and protein-resistant functionalities in one molecule; the molecule has a general formula: A-(CH2)n—(O[CH2]t)m—(CH2)v—Y ??(1) wherein A is a functional group for binding to a substrate and Y is a functional group for binding to biomolecules. The invention furthermore provides a method for the synthesis of such a silane molecule and a method for depositing a monolayer of such silane molecules onto a substrate. Such a monolayer of silane molecules may be used in biosensors, DNA/protein micro-arrays or other sensor applications. For further lowering the protein binding to the surface of the biosensor, the monolayer may furthermore comprise second silane molecules with formula: B—(CH2)o—(OCH2CH2)r—Z.

Abstract: Semiconductor process technology and devices are provided, including a method for forming a high quality group III nitride layer on a silicon substrate and to a device obtainable therefrom. According to the method, a pre-dosing step is applied to a silicon substrate, wherein the substrate is exposed to at least 0.01 ?mol/cm2 of one or more organometallic compounds containing Al, in a flow of less than 5 ?mol/min. The preferred embodiments are equally related to the semiconductor structure obtained by the method, and to a device comprising said structure.

Abstract: The present invention relates to a method for obtaining enlarged Cu grains in small trenches. More specifically it related to a method for creating enlarged copper grains or inducing super secondary grain growth in electrochemically deposited copper in narrow trenches and/or vias to be used in semiconductor devices.

Abstract: An organic photo-detecting field-effect device is presented, the device comprising a first layer comprising an organic semi-conducting material, the first layer acting as an accumulation layer and as a charge transport layer for a first type of charge carriers, and a second layer comprising a second material, the second layer acting as a an accumulation layer for a second type of charge carriers. Charges collected in the second layer influence the charge transport in the first layer. The second material may be an organic semi-conducting material or a metal. At the interface between the first layer and the second layer a heterojunction is formed in the case of an organic semi-conducting second material, and a Schottky barrier is formed in the case of a metal second material, giving rise to an efficient exciton splitting. Different geometries and operation modes facilitating the removal of the collected photo-generated charge carriers during the reset period of the device are presented.

Abstract: The invention relates to a method for fabricating a semiconductor device having a semiconductor body that comprises a first semiconductor structure having a dielectric layer and a first conductor, and a second semiconductor structure having a dielectric layer and a second conductor, that part of the first conductor which adjoins the dielectric layer having a work function different from the work function of the corresponding part of the second conductor. In one embodiment of the invention, after the dielectric layer has been applied to the semiconductor body, a metal layer is applied to the said dielectric layer, and then a silicon layer is deposited on the metal layer and is brought into reaction with the metal layer at the location of the first semiconductor structure, forming a metal silicide.

Abstract: A method for operating a terminal having at least one resource and executing at least one application in real-time, wherein the execution of the application requires execution of at least two tasks, comprises selecting operating points for each of the tasks from a predetermined set without knowing all implementation details. The method further comprises determining at least one implementation parameter for the selected quality-resource utilization operating point, wherein the determining is performed for each of the tasks, and wherein the determined implementation parameter is different than the quality and resource utilization, and executing the tasks with their determined implementation parameter.