Abstract: Example embodiments relate to an integrated lens-free imaging device. One embodiment includes a lens-free imaging device for imaging a sample. The lens-free imaging device includes a radiation guiding structure that includes a first surface parallel with a second surface. The lens-free imaging device also includes an imaging region. The radiation guiding structure is adapted for receiving an incoming radiation wave, thereby obtaining a confined radiation wave. At least one perturbation is present in the radiation guiding structure for generating, from the confined radiation wave, a first radiation wave and a second radiation wave. The radiation guiding structure is configured to direct the first radiation wave out of the radiation guiding structure toward the first surface to a sample measurement region. The radiation guiding structure is further configured to direct the second radiation wave toward the second surface to the imaging region.

Abstract: An image sensor for acquiring an image of an object comprises: an array of photo-sensitive areas (112); and a mosaic filter (114) associated with the array dividing the array into sub-groups (118) of photo-sensitive areas (112) extending across at least two rows and two columns, wherein the mosaic filter (114) transmits unique light properties to the photo-sensitive areas (112) within the sub-group (118); wherein the mosaic filter (114) comprises a sequence of unique filter portions associated with a set of photo-sensitive areas (112) along a row, wherein the set extends through more than one sub-group (118); wherein sequences comprising the unique filter portions are associated with each row and wherein the sequences associated with adjacent rows comprise different orders of the unique filter portions, such that different light properties are transmitted to photo-sensitive areas (112) in the same column of adjacent rows.

Abstract: An oxygen-free or oxygen-poor solution for the electroless deposition of a platinum group metal is described. The solution includes a ruthenium (II) amine complex having a first oxidation potential, and a platinum group metal compound having a reduction potential larger than the opposite of the oxidation potential of the ruthenium (II) amine complex.

Abstract: An example embodiment may include a method for placing on a carrier substrate a semiconductor device. The method may include providing a semiconductor substrate comprising a rectangular shaped assist chip, which may include at least one semiconductor device surrounded by a metal-free border. The method may also include dicing the semiconductor substrate to singulate the rectangular shaped assist chip. The method may further include providing a carrier substrate having adhesive thereon. The method may additionally include transferring to and placing on the carrier substrate the rectangular shaped assist chip, thereby contacting the adhesive with the rectangular shaped assist chip at least at a location of the semiconductor device. The method may finally include singulating the semiconductor device, while remaining attached to the carrier substrate by the adhesive, by removing a part of rectangular shaped assist chip other than the semiconductor device.

Abstract: A semiconductor device manufacturing method of forming a trench and a via in a porous low dielectric constant film formed on a substrate as an interlayer insulating film, includes: embedding a polymer having a urea bond in pores of the porous low dielectric constant film by supplying a raw material for polymerization to the porous low dielectric constant film; forming the via by etching the porous low dielectric constant film; subsequently, embedding a protective filling material made of an organic substance in the via; subsequently, forming the trench by etching the porous low dielectric constant film; subsequently, removing the protective filling material; and after the forming a trench, removing the polymer from the pores of the porous low dielectric constant film by heating the substrate to depolymerize the polymer, wherein the embedding a polymer having a urea bond in pores is performed before the forming a trench.

Abstract: The disclosed technology relates to a method and apparatus for atomic probe tomography (APT). The APT relates to the 3-dimensional reconstruction of the material of a sample having a free-standing tip, wherein an image is repeatedly obtained of the tip area through ptychography or ankylography, in the course of the APT analysis. In one aspect, imaging of the tip is achieved by directing a coherent light beam in the soft X-ray energy range at the tip during the APT analysis. The photons of the X-ray beam are not affected by the strong electric field around the tip, and thereby allow to determine the image of the tip through the application of a ptychography or ankylography algorithm to the data obtained from a photon detector. The photon detector is positioned to detect interference patterns created by photons which have interacted with the tip area, at different overlapping spots of the tip area, when the X-ray beam is scanned across a plurality of such overlapping areas.

Abstract: A method of forming aligned gates for horizontal nanowires or nanosheets, comprising: providing a wafer which comprises at least one fin of sacrificial layers alternated with functional layers, and a dummy gate covering a section of the fin between a first end and a second end; at least partly removing the sacrificial layers at the first end and the second end thereby forming a void between the functional layers at the first and end such that the void is partly covered by the dummy gate; providing resist material which oxidizes upon EUV exposure; exposing the wafer to EUV light; selectively removing the dummy gate and the unexposed resist; forming a gate between the functional layers and between the exposed resist at the first end and at the second end.

Abstract: Systems and methods described herein include a reference electrode for being immersed in a bulk solution. The reference electrode comprises a reservoir having reservoir walls defining a reservoir volume filled with an electrolyte; an electrode in the reservoir, in contact with the electrolyte. The reservoir of the reference electrode is closed except for the presence of at least one pore in at least one of the reservoir walls, the at least one pore being filled with electrolyte and being adapted for allowing ionic contact between the electrolyte in the reservoir and the bulk solution into which the reference electrode is to be immersed.

Abstract: The disclosed technology relates to an apparatus for tomographic analysis of a specimen based on STEM images of the specimen, as well as for tomographic analysis of the chemical composition of the specimen based on X-ray detection by EDS detectors. In one aspect, the apparatus comprises an elongated specimen holder that is rotatable about a longitudinal axis and is configured to hold a pillar-shaped specimen at the end of the holder. The longitudinal axis is positioned in a sample plane which is perpendicular to the beam direction of an electron beam produced by an electron gun. The apparatus also comprises at least two EDS detectors, each EDS detector having a detecting surface oriented perpendicularly to the sample plane and intersecting with the sample plane, wherein the two EDS detectors are positioned on opposite lateral sides of the specimen.

Abstract: An LC oscillator powering arrangement comprises an LC oscillator configured to provide an oscillating signal output; a current source configured to supply the LC oscillator with a supply current, the current source during operation being controlled by a control voltage and supplied with a supply voltage subject to supply voltage ripple; and a replication block configured to generate an amplified replica of the supply voltage ripple directly from the supply voltage and to overlay the replica on the control voltage.

Abstract: Example embodiments relate to selective deposition for interdigitated patterns in solar cells. One embodiment includes a method for creating an interdigitated pattern for a solar cell. The method includes providing a substrate of the solar cell. A surface of the substrate includes one or more exposed regions and one or more regions covered by a patterned first passivation layer stack protected by a hard mask. The method also includes selectively depositing a second passivation layer stack that includes at least a first layer of amorphous silicon (a-Si) on the one or more exposed regions such that the first passivation layer stack and the second passivation layer stack form the interdigitated pattern. Selectively depositing the second passivation layer stack includes adding a sublayer of the first layer on the hard mask, etching the added sublayer on the hard mask, and cleaning a surface of the remaining added sublayer.

Abstract: The disclosed technology generally relates to integrating semiconductor dies and more particularly to bonding semiconductor substrates. In an aspect, a method of bonding semiconductor substrates includes providing a first substrate and a second substrate. Each of the first substrate and the second substrate comprises a dielectric bonding layer comprising one or more a silicon carbon oxide (SiCO) layer, a silicon carbon nitride (SiCN) layer or a silicon carbide (SiC) layer. The method additionally includes, prior to bonding the first and second substrates, pre-treating each of the dielectric bonding layer of the first substrate and the dielectric bonding layer of the second substrate. Pre-treating includes a first plasma activation process in a plasma comprising an inert gas, a second plasma activation process in a plasma comprising oxygen, and a wet surface treatment including a water rinsing step or an exposure to a water-containing ambient.

Abstract: Example embodiments relate to interconnect structures and related methods. One embodiment includes an interconnect structure. The interconnect structure includes a first interconnection level including a first dielectric layer and a first set of conductive paths. The interconnect structure also includes a second interconnection level arranged above the first interconnection level and including a second dielectric layer and a second set of conductive paths. Further, the interconnect structure includes a third interconnection level arranged above the second interconnection level and including a third dielectric layer and a third set of conductive paths. In addition, the interconnect structure includes a fourth interconnection level arranged above the third interconnection level and including a fourth dielectric layer and a fourth set of conductive paths. Still further, the interconnect structure includes a first multi-level via structure and a second multi-level via structure.

Abstract: Provided are a dual coupler device configured to receive lights of different polarization components, a spectrometer including the dual coupler device, and a non-invasive biometric sensor including the spectrometer. The dual coupler device may include, for example, a first coupler layer configured to receive a light of a first polarization component among incident lights. and a second coupler layer configured to receive a light of a second polarization component among the incident lights, wherein a polarization direction of the light of the first polarization component is perpendicular to a polarization direction of the light of the second polarization component. The first coupler layer and the second coupler layer may be spaced apart from each other and extended along a direction in which the light propagates in the first coupler layer and the second coupler layer.

Abstract: An imaging apparatus comprises: (i) an illumination waveguide configured to propagate light by total internal reflection, wherein an evanescent field illuminates an object in close relation to the illumination waveguide; (ii) an array of light-sensitive areas arranged on a common substrate with the illumination waveguide for detecting light from the object; and (iii) a controller configured to control forming of an interference pattern in the illumination waveguide, wherein the interference pattern comprises at least one element of constructive interference for selectively illuminating a portion of the object, the at least one element having a dimension with a size in a range of 100 nm-10 ?m; wherein the controller is configured to sequentially change the interference pattern in relation to the object such that different portions are illuminated and light from different portions is sequentially detected.

Abstract: A battery operated device and method of removing a battery therefrom are described. The battery operated device includes a battery compartment, a battery in the battery compartment, and an electric component powered by the battery. The battery compartment is mounted on a deformable base and includes a top surface which is adapted to be ruptured by deforming the deformable base, thereby enabling removal of the battery from the battery compartment. The method of removing a battery from a battery compartment of a battery operated device includes rupturing a top surface of the battery compartment by deforming a deformable base of the battery compartment, and removing the battery from the battery compartment.

Abstract: A micro analysis chip comprises an inlet and a fluid flow path communicating thereto. The fluid flow path comprises a first flow path, a second flow path, and a third flow path arranged continuously along a longitudinal direction of the fluid flow path. An antibody is bound on at least one peripheral surface selected from the group consisting of peripheral surfaces of the second and third flow paths. A cross-sectional area of the third flow path is constant or increased monotonically along a direction X from the second flow path toward the third flow path. A cross-sectional area of the second flow path is increased monotonically along the direction X from the one end to the other end of the second flow path. A cross-sectional area of the first flow path is larger than a cross-sectional area at the one end of the second flow path.

Abstract: Sensor devices for quantifying luminescent targets are described herein. An example device comprises a light source for exciting the targets, thus generating luminescence signals and a detector for detecting these signals, resulting in a detected signal which comprises a desired signal originating from the targets and a background signal. It moreover comprises a bleaching device for bleaching of at least part of the sources generating the background signal and a processor configured to trigger the bleaching device to start bleaching, and to trigger the light source for exciting the remaining luminescent targets which are not bleached, and to trigger the detector for detecting the luminescence signal of the remaining luminescent targets, so as to generate a measurement signal representative for the quantification of the luminescent targets.

Abstract: A device and method for manufacturing a Si-based high-mobility CMOS device is provided.

Abstract: A device in holographic imaging comprises: at least two light sources, wherein each of the at least two light sources is arranged to output light of a unique wavelength; and at least one holographic optical element, wherein the at least two light sources and the at least one holographic optical element are arranged in relation to each other such that light from the at least two light sources incident on the at least one holographic optical element interacts with the at least one holographic optical element to form wavefronts of similar shape for light from the different light sources.