Abstract: A method of producing a metal-organic framework (MOF) film on a substrate is provided. The method includes providing a substrate having a main surface and forming on the main surface a MOF film using an organometallic compound precursor and at least one organic ligand, wherein each of the organometallic compound precursor and the at least one organic ligand is provided only in the vapour phase.

Abstract: A method is provided for forming a multi-level interconnect structure on a semiconductor substrate, e.g., for use in an integrated circuit, comprising forming on the substrate a first interconnection level comprising a first dielectric layer and a first set of conductive structures arranged in the first dielectric layer, forming on the first interconnection level a second interconnection level comprising a second dielectric layer and a second set of conductive structures arranged in the second dielectric layer, and forming on the second interconnection level a third interconnection level.

Abstract: An electrically-operated semiconductor laser device and method for forming the laser device are provided. The laser device includes a fin structure to which a waveguide is optically coupled. The waveguide is optically coupled to passive waveguides at either end thereof. The fin structure includes an array of fin elements, each fin element comprising Group III-V materials.

Abstract: A method for immobilizing an analyte-recognizing molecule (1) on a surface (2?) functionalized with chemical groups Y1 suitable for reacting with a chemical group X2 of a coupling molecule (7) to form a reaction product comprising a chemical group Y2 suitable for reacting with the analyte-recognizing molecule (1), the method comprising the steps of: a) Providing the functionalized surface (2?), b) Contacting the functionalized surface (2?) with a solution (6) comprising simultaneously: i) The coupling molecule (7), and ii) The analyte-recognizing molecule (1).

Abstract: The disclosed technology relates to a method and apparatus for correctly positioning a probe suitable for scanning probe microscopy (SPM). The probe is positioned relative to the apex region of a needle-shaped sample, such as a sample for atom probe tomography, in order to perform a SPM acquisition of the apex region to obtain an image of the region. In one aspect, the positioning takes place by an iterative process, starting from a position wherein one side plane of the pyramid-shaped SPM probe interacts with the sample tip. By controlled consecutive scans in two orthogonal directions, the SPM probe tip approaches and finally reaches a position wherein a tip area of the probe interacts with the sample tip's apex region.

Abstract: The disclosed technology generally relates to semiconductor devices and more particularly to semiconductor devices comprising a magnetic tunnel junction (MTJ). In an aspect, a method of forming a magnetoresistive random access memory (MRAM) includes forming a layer stack above a substrate, where the layer stack includes a ferromagnetic reference layer, a tunnel barrier layer and a ferromagnetic free layer and a spin-orbit-torque (SOT)-generating layer. The method additionally includes, subsequent to forming the layer stack, patterning the layer stack to form a MTJ pillar.

Abstract: The present disclosure relates to three dimensional (3D) transistor structures and methods of forming the same. In an aspect, a method comprises providing a vertical stack of alternating layers of channel material and dummy material, forming a first set of fins on the stack, and forming a second fin above the first set of fins, the second fin extending orthogonal to the first set of fins. Further, the first set of fins is cut into a set of fin portions, using the second fin and a first sidewall spacers as an etch mask, and second sidewall spacers are formed on the second fin. These structures are used to form a 3D structure of channel regions and source/drain regions forming transistor structures. Advantageously, the 3D semiconductor structure is manufactured using a relatively low number of mask layers per transistor which decreases manufacturing costs.

Abstract: The present disclosure relates to devices and methods for acquiring an image having two-dimensional spatial resolution and spectral resolution. An example method comprises: acquiring a frame using rows of photo-sensitive areas on a sensor surface detecting incident light from an object imaged by an optical system onto an image plane, wherein rows of photo-sensitive areas are arranged to receive different wavelengths; moving the sensor surface in a direction perpendicular to a longitudinal direction of the rows; repeating the acquiring and moving for acquiring a plurality of frames recording different spectral information for respective positions on the object; and combining information from the plurality of frames to form multiple channels of an image, wherein each channel is formed based on detected light in respective rows and represent a two-dimensional image of the object for a different wavelength.

Abstract: A low dropout, LDO, voltage regulator comprising: an LDO input configured to receive an input voltage signal; an LDO output configured to output an output voltage signal; an error amplifying circuit, which is configured to receive a reference signal and a feedback signal associated with the output voltage signal, the error amplifying circuit being further configured to output an error signal; an output stage, which is configured to receive the error signal and output a control signal; and an output device, which is connected to the LDO input and configured to provide the output voltage signal and which is controlled by the control signal for regulating the output voltage signal; wherein the output stage is connected to the input voltage for receiving an adaptive bias current.

Abstract: A method for forming a film with an annealing step and a deposition step is disclosed. The method comprises an annealing step for inducing self-assembly or alignment within a polymer. The method also comprises a selective deposition step in order to enable selective deposition on a polymer.

Abstract: An imaging sensor is disclosed, comprising: a set of at least two charge-coupled device, CCD, sub-arrays, wherein each sub-array comprises pixels arranged in columns and rows, and each pixel being arranged to accumulate an electric charge proportional to an intensity of light incident on the pixel; a time delay and integration, TDI, clocking circuitry for controlling and timing transfer of accumulated electric charges between rows of pixels in a column direction in order to integrate the accumulated electric charges in each column of pixels; wherein each CCD sub-array further comprises a readout row for converting the integrated electric charge of each column of pixels into voltage or current, wherein the readout row comprises transistors enabling readout of the signal by the readout block; and a readout block which is arranged to receive input from selected readout rows and convert the input into digital domain or convert the input to a combined representation of pixel values based on the set of CCD sub-arra

Abstract: Example embodiments relate to methods for detecting defects of a lithographic pattern. One example embodiment includes a method for detecting defects of a lithographic pattern on a semiconductor wafer that includes a plurality of die areas. Each of the die areas has a region of interest (ROI) that includes a plurality of features forming the lithographic pattern. The method includes acquiring an image of at least one of the ROIs. The method also includes removing features touching an edge of the image. Further, the method includes counting a number of remaining features in the image.

Abstract: Example embodiments relate to extreme ultraviolet absorbing alloys. One example embodiment includes an alloy. The alloy includes one or more first elements selected from: a first list consisting of: Ag, Ni, Co, and Fe; and a second list consisting of: Ru, Rh, Pd, Os, Ir, and Pt. The alloy also includes one or more second elements selected from: the first list, if the one or more first elements are not selected from the first list; and a third list consisting of Sb and Te. An atomic ratio between the one or more first elements and the one or more second elements is between 1:1 and 1:5 if the one or more second elements are selected from the third list and between 1:1 and 1:19 if the one or more second elements are not selected from the third list.

Abstract: A plasmonic device comprising an odd number of at least three input waveguides and at least one output waveguide is disclosed. In one aspect, the waveguides are adapted for guiding a surface plasmon polariton wave and the input waveguides are connected to the output waveguide at a waveguide junction. The inserted SPP waves have a phase at the waveguide junction which is either a first phase or a second phase. The second phase is shifted over ? with regard to the first phase and a combined SPP wave at the waveguide junction has a resulting phase wherein the dimensions of the waveguides are such that for different combinations of phases of the inserted waves the combined waves are phase aligned.

Abstract: A method and system for detecting at least one of a heart rate and a respiratory rate of a subject are disclosed. In one aspect, the method includes transmitting a signal towards the subject and receiving a reflected signal from the subject being Doppler-shifted due to at least one of the heart rate and the respiratory rate. The method also includes providing the reflected signal to a first input of a phase comparator, providing an adjustible reference signal to a second input of the phase comparator, and generating an output signal by the phase comparator based on the reflected signal and the reference signal. The method includes varying, by the reference signal generator, at least one of a phase and a frequency of the adjustable reference signal based on the output signal of the phase comparator to track a phase of the reflected signal.

Abstract: A mask structure and a method for manufacturing a mask structure for a lithography process is provided. The method includes providing a substrate covered with an absorber layer on a side thereof; providing a patterned layer over the absorber layer, the patterned layer comprising at least one opening; and forming at least one assist mask feature in the at least one opening, wherein the at least one assist mask feature is formed by performing a directed self-assembly (DSA) patterning process comprising providing a BCP material in the at least one opening and inducing phase separation of a BCP material into a first component and a second component, the first component being the at least one assist mask feature and being periodically distributed with respect to the second component.

Abstract: The disclosed technology generally relates to semiconductor fabrication and more particularly to forming vertical transistor devices. In an aspect, a method of forming a vertical transistor device includes forming, on a substrate, a fin comprising a stack including a first layer, a second layer formed above the first layer and a third layer formed above the second layer. The method additionally includes forming a gate layer serving as an etch mask above the third layer. The method further includes etching the second and third layers of the fin using the gate layer as the etch mask to form a pillar. First and third layers of the pillar define a source region and a drain region, respectively, of the vertical transistor device. A second layer of the pillar defines a channel region of the vertical transistor device. The gate layer comprises a gate electrode arranged on at least one sidewall of the second layer.

Abstract: According to an aspect of the present inventive concept there is provided a method for eye tracking, comprising: capturing a sequence of digital images of an eye of a user; outputting data including said sequence of images to an image processing unit; processing said data by the image processing unit to determine a sequence of positions of the eye, each position being indicative of a gaze direction, acquiring biosignal data representing an activity of the eye; and in response to detecting closing of the eye based on the acquired biosignal data, pausing at least one of said capturing, said outputting and said processing. A system for implementing the method is also disclosed.

Abstract: Example embodiments relate to systems and methods for heart rate detection with motion artifact reduction. One embodiment includes an electronic system for heart rate detection. The electronic system includes a random sampling sensor module. The random sampling sensor module includes a first sensor circuit configured to provide nonuniform random samples below a Nyquist rate of a photoplethysmographic signal. The random sample sensor module also includes a second sensor circuit configured to provided nonuniform random samples below a Nyquist rate of a motion signal. The motion signal and the photoplethysmographic signals are sampled with an equivalent pattern. The electronic system also includes a heart rate detection module. The heart rate detection module is configured to calculate a heart rave value based on frequencies corresponding to peak powers of calculated power spectral density value sets corresponding to the photoplethysmographic signals in a frequency range of interest.

Abstract: The present disclosure relates to a method for forming a carbon nanotube pellicle membrane for an extreme ultraviolet lithography reticle, the method comprising: bonding together overlapping carbon nanotubes of at least one carbon nanotube film by pressing the at least one carbon nanotube film between a first pressing surface and a second pressing surface, thereby forming a free-standing carbon nanotube pellicle membrane. The present disclosure also relates to a method for forming a pellicle for extreme ultraviolet lithography and for forming a reticle system for extreme ultraviolet lithography respectively.