Abstract: The disclosed technology generally relates semiconductor devices and more particularly to vertical channel devices and methods of forming the vertical channel devices. According to one aspect, a method of forming a vertical channel device includes forming on a semiconductor substrate a plurality of vertical channel structures. The method additionally includes forming gates, where each of the gates wraps around one of the vertical channel structures. The method additionally includes embedding the gates in a first dielectric layer and exposing top portions of the vertical channel structures. The method additionally includes forming top electrodes on corresponding top portions of the vertical channel structures. The method additionally includes forming sidewall etch barriers on sidewalls of each of the top electrodes. The method additionally includes forming a second dielectric layer covering the first dielectric layer and the top electrodes.

Abstract: The disclosed technology generally relates to semiconductor structures and methods of forming the semiconductor structures, and more particularly to semiconductor structures related to a gate-all-around field effect transistor and a fin field effect transistor. In one aspect, a method of forming field effect transistors includes forming in a first region of a substrate a first semiconductor feature and forming in a second region of the substrate a second semiconductor feature. Each of the first and second semiconductor features comprises a fin-shaped semiconductor feature including a vertical stack of at least a first semiconductor material layer and a second semiconductor material layer formed over the first semiconductor material layer.

Abstract: A communication system is provided for transmitting a RF signal, which has a frequency band. The communication system comprises: a sigma delta modulator for modulating the RF signal into a broadband signal wherein the signal to noise ratio of the broadband signal is higher in the frequency band of the RF signal than outside the frequency band of the RF signal; an optical transmitter connected with the sigma delta modulator and with an optical fiber for transmitting the broadband signal over the optical fiber; a photo-detector configured for receiving the broadband signal from the optical fiber and converting it into an electrical signal; an output device and a matching circuit configured for power matching and/or noise matching of the photo-detector, at the frequency band of the RF signal, with the output device.

Abstract: Embodiments described herein relate to a light coupler, a photonic integrated circuit, and a method for manufacturing a light coupler. The light coupler is for optically coupling to an integrated waveguide and for out-coupling a light signal propagating in the integrated waveguide into free space. The light coupler includes a plurality of microstructures. The plurality of microstructures is adapted in shape and position to compensate decay of the light signal when propagating in the light coupler. The plurality of microstructures is also adapted in shape and position to provide a power distribution of the light signal when coupled into free space such that the power distribution corresponds to a predetermined target power distribution. Each of the microstructures forms an optical scattering center. The microstructures are positioned on the light coupler in accordance with a non-uniform number density distribution.

Abstract: The disclosed technology generally relates to semiconductor devices, and more specifically to a semiconductor device having a high aspect ratio channel layer. In one aspect, semiconductor device includes a semiconductor substrate having formed thereon a dielectric isolation layer having an opening formed therethrough. The semiconductor device additionally includes a filling isolation structure having a portion formed in the opening and a portion protruding above the dielectric isolation layer, wherein the filling isolation structure comprises a dielectric filling layer. The semiconductor device additionally includes a dielectric layer formed on the dielectric isolation layer, wherein the dielectric layer and the dielectric filling layer have top surfaces that are substantially co-planar to form a common top surface.

Abstract: The disclosure relates to a method of fabricating an enhancement mode Group III-nitride HEMT device and a Group III-nitride structure fabricated therefrom. One example embodiment is a method for fabricating an enhancement mode Group III-nitride HEMT device. The method includes providing a structure. The structure includes a substrate having a main surface. The structure also includes a layer stack overlying the main surface. Each layer of the layer stack includes a Group III-nitride material. The structure further includes a capping layer on the layer stack. The method also includes forming a recessed gate region by removing, in a gate region, at least the capping layer by performing an etch process, thereby exposing a top surface of an upper layer of the layer stack. The method further includes forming a p-type doped GaN layer in the recessed gate region and on the capping layer by performing a non-selective deposition process.

Abstract: A method of forming a directed self-assembled (DSA) layer on a substrate by: providing a substrate; applying a layer comprising a self-assembly material on the substrate; and annealing of the self-assembly material of the layer to form a directed self-assembled layer by providing a controlled temperature and gas environment around the substrate. The controlled gas environment comprises molecules comprising an oxygen element with a partial pressure between 10-2000 Pa.

Abstract: The present disclosure relates to a method for selectively forming a dielectric material on a first area of a top surface of a substrate. In an embodiment, the method involves providing the substrate including the top surface, the top surface including the first area and a second area, the first area having a hydrophilicity characterized by a water contact angle of at least 45° and the second area having a hydrophilicity characterized by a water contact angle of less than 40°. The method also involves providing a precursor aqueous solution on the substrate, the precursor aqueous solution including: a solvent, a dielectric material precursor, a catalyst for forming a dielectric material from the dielectric material precursor, and an ionic surfactant. Further, the method involves removing the solvent.

Abstract: A spectroscopic apparatus and method for analyzing a biological material are provided. The spectroscopic apparatus may analyze a biological material which has an internal non-uniform tissue depending on a position thereof. The apparatus may include at least one detector configured to obtain respective detection spectrums corresponding to a plurality of measurement regions that are at mutually different positions of the biological material, and an information processor to determine whether the measurement regions are normal by mutually comparing the detection spectrums, or converting contribution degrees of data for a specific component of the biological material by differentiating the detection spectrums.

Abstract: The disclosed technology generally relates to semiconductor fabrication and more particularly to a method of forming vertical channel devices. In one aspect, a method of forming vertical channel devices includes providing a semiconductor structure that includes a substrate and a plurality of vertical channel structures. The method additionally includes surrounding the vertical channel structures with respective wrap-around gates. The method additionally includes forming enlarged top portions by selectively growing a doped semiconductor material on respective top portions of at least a subset of the vertical channel structures. The method further includes forming a top electrode on each of the enlarged top portions.

Abstract: A fluidic device for mixing a reagent fluid with a fluid sample comprises a supply channel having a reagent inlet, a sample inlet and a first reagent storage, coupled to the supply channel; a mixer for mixing the reagent with the fluid sample, having a mixer inlet coupled to the supply channel at a position in between the sample inlet and the first reagent storage; In a first stage, when the reagent fluid is supplied in the reagent inlet, the reagent is provided in the supply channel and the first reagent storage, and such that the reagent is thereafter stationed in the supply channel and the first reagent storage until a fluid sample is provided in the sample inlet. When the fluid sample is supplied in the sample inlet, the supplied fluid sample and the stationed reagent flows into the mixer thereby mixing both fluids.

Abstract: The disclosure is related to a method and apparatus for transmission electron microscopy wherein a TEM specimen is subjected to at least one thinning step by scratching at least an area of the specimen with an SPM probe, and wherein the thinned area is subjected to an SPM acquisition step, using the same SPM probe or another probe.

Abstract: Provided are a dual coupler device configured to receive lights of different polarization components, a spectrometer including the dual coupler device, and a non-invasive biometric sensor including the spectrometer. The dual coupler device may include, for example, a first coupler layer configured to receive a light of a first polarization component among incident lights. and a second coupler layer configured to receive a light of a second polarization component among the incident lights, wherein a polarization direction of the light of the first polarization component is perpendicular to a polarization direction of the light of the second polarization component. The first coupler layer and the second coupler layer may be spaced apart from each other and extended along a direction in which the light propagates in the first coupler layer and the second coupler layer.

Abstract: The disclosed technology relates to a method for improving performance of a feedback circuit comprising an amplifier and a feedback network, wherein the feedback circuit has at least one tunable component. In one aspect, the method comprises measuring first amplitude values at an input of the amplifier and second amplitude values at an output of the amplifier, estimating a linear open-loop gain of the amplifier based on both the amplitude values, estimating a linear finite gain error based on the estimated gain and the second amplitude values, subtracting the linear finite gain error from the first amplitude values to derive a set of samples containing second error information, deriving an signal-to-noise-plus-distortion ratio estimate based on the variance of the set of samples and a variance of the second amplitude values, and adjusting the feedback circuit in accordance with the signal-to-noise-plus-distortion ratio estimate.

Abstract: An aspect of the disclosure includes a comparator circuit comprising: a master latch comprising a first amplifier circuit and a first latch circuit coupled to an output of the first amplifier circuit; a slave latch comprising a second amplifier circuit having an input coupled to the output of the first amplifier circuit, and a second latch circuit coupled to an output of the second amplifier circuit; and a hysteresis compensation circuit coupled to the output of the second amplifier circuit and configured to cause a first predetermined signal level shift of an output signal of the first amplifier circuit in response to a high signal level at the output of the second amplifier circuit, and configured to cause a second predetermined signal level shift of an output signal of the first amplifier circuit in response to a low signal level at the output of the second amplifier circuit.

Abstract: The disclosed technology generally relates semiconductor devices and more particularly to a vertical transistor device, and a method of fabricating the same. In one aspect, the method includes providing, on a substrate, a fin formed of a stack of a first layer, a second layer and a third layer, wherein the second layer is positioned above the first layer and the third layer is positioned above the second layer. The method additionally includes forming a dielectric on the sidewalls of the first and third layers of the fin selectively against a sidewall of the second layer, and the method additionally includes forming a gate contacting layer for contacting a sidewall of the second layer. The first and third layers define a source region and a drain region, respectively, of the vertical transistor device. The second layer defines a channel region of the vertical transistor device.

Abstract: An integrated photonic device comprises: an input waveguide configured to extend in an input plane, and an output waveguide configured to extend in an output plane, wherein the output plane is parallel to or contained within the input plane; an input coupler optically coupled to the input waveguide, wherein the input coupler is configured to redirect a light signal out of the input waveguide and the input plane; a light property modifier configured to receive the light signal from the input coupler and reflect the light signal towards the output plane, wherein the light property modifier is configured to selectively adjust an optical path length of the light signal; and an output coupler optically coupled to the output waveguide, wherein the output coupler is configured to receive the reflected light signal from the light property modifier and redirect the light signal into the output waveguide and the output plane.

Abstract: A method of fabricating a vertical channel 3D semiconductor memory device is disclosed. In one aspect, the method comprises providing a stack of alternating layers of conductive material and dielectric material on a major surface of substrate, providing in the stack at least one trench, having sloped sidewalls sloping towards the major surface, extending at least below the lowest layer of conductive material, forming, in order, a programmable material, a channel liner, and a filler material on the sidewalls of the trench. Thereby, the method forms a memory string, and an electrode to the channel liner at opposite ends of the memory string.

Abstract: The invention relates to a method, a system and various components of such a system for selecting a chunk identifier in a content delivery network. In said network a first and a second chunk are available, belonging to different quality representations of a content item. A client device transmits a first chunk retrieval request for retrieving a first chunk and a further request. In response to said first chunk retrieval request and/or said further request, delivery path information is transmitted. The delivery path information may comprise chunk identifiers and bandwidth indicators. On the basis of the delivery path information the client device determines a chunk identifier to be included in a second chunk retrieval request for retrieving a second chunk.

Abstract: The present disclosure relates to a front-end module for a telecommunication device with an EBD circuit comprising a hybrid transformer for coupling via a transmit port to the telecommunication device transmitting a first frequency transmit signal, to an antenna, via a receive port to the telecommunication device receiving a second frequency receive signal, and to a tunable impedance circuit. In a first configuration the EBD circuit is configured to isolate the transmit port from the receive port at the first frequency, and the FEM comprises a first filter at the transmit port for attenuating the transmit signal with a predetermined amount at the second frequency. In a second configuration the EBD circuit is configured to isolate the transmit port from the receive port at the second frequency, and the FEM comprises a second filter at the receive port for attenuating the receive signal a predetermined amount at the first frequency.