Abstract: An integrated circuit chip includes a plurality of independent FIFO memory devices that are each configured to support all four combinations of DDR and SDR write modes and DDR and SDR read modes and collectively configured to support all four multiplexer, demultiplexer, broadcast and multi-Q operating modes. The multi-Q mode of operation supports write path queue switching that is free of write word fall-through and read path queue switching that is free of read word fall-through. The multi-Q mode also supports write path queue switching on every write cycle in both SDR and DDR write modes and independent read path queue switching on every read cycle in both SDR and DDR read modes.

Abstract: Delay-locked loop integrated circuits include a delay chain having a plurality of delay chain units. The delay chain may be a binary-weighted delay chain and the delay chain units may be arranged in ascending or descending order (e.g., x1, x2, x4, x8, . . . ) according to delay. Each of the plurality of delay chain units may include a respective phase comparator. Each phase comparator is configured to identify whether a delay provided by the corresponding delay chain unit exceeds a fraction of a period of a reference clock signal applied to an input of the delay chain. This fraction of a period may be equivalent to one-half or other percentage of a period of the reference clock signal. The phase comparators with the delay chain units operate to generate a multi-bit delay value signal, which is provided to a delay chain control circuit.

Abstract: CAM-based search engines may be configured to support multiple databases within a CAM core. These databases may represent tables for different applications, which can be searched sequentially in response to a single indirect instruction that is loaded during a control cycle. The databases to be searched may be identified by a multi-database search instruction that is loaded during a single data cycle, which may overlap with the control cycle. In some cases, the databases may be searched using variations of a primary search key, so that it is unnecessary to repeatedly load the entire search key across a network interface for each search operation within a respective database. Instead, shorter replacement key segments may be loaded for each of a plurality of the search operations and these replacement key segments may be combined with one or more segments of the primary search key in the CAM core to define a desired search key for a respective search operation.

Abstract: Integrated search engine devices include a content addressable memory (CAM) core that is configured to support at least one database of searchable entries therein and a control circuit. The control circuit is configured to support reporting to a command host of data identifying entries that have been aged out of the at least one database and/or entries that have exceeded an activity-based aging threshold. The control circuit is further configured to support age reporting that is programmable on a per entry basis within the at least one database.

Abstract: Integrated circuit memory devices support write and read burst modes of operation with uniformly short interconnect paths that provide high-speed memory access timing characteristics. These memory devices include a semiconductor chip having a memory core therein and at least N bond pads thereon. The memory core is configured to support a xN burst-M write mode of operation at QDR and/or DDR rates, where N is greater than four and M is greater than one. The memory core is further configured to support one-to-one mapping between burst-M write data received at each of the N bond pads and corresponding ones of N memory blocks in the memory core during the xN burst-M write mode of operation.

Abstract: An input port for a network switch includes a cell buffer for receiving incoming unicast and multicast cells and for writing each cell into an internal cell memory. The cell buffer thereafter forwards each unicast cell from the cell memory to one network switch output port and forwards a separate copy of each multicast cell to each of several network switch output ports. When the cell buffer writes a unicast cell to the cell memory, it sends a pointer to the storage location of the unicast cell to a queue manager. When the cell buffer writes a multicast cell to the cell memory, it sends several pointers to the queue manager, one for each output port that is to receive a copy of the multicast cell, with each pointer pointing not to the multicast cell's storage location but to an empty storage location in the cell memory. The cell buffer also maintains a database relating each pointer it sent to the queue manager to an actual storage location of a unicast or multicast cell.

Abstract: A CAM block includes a CAM array having a plurality of rows and columns of 4-bit NAND-type CAM cells therein. Each of a plurality of the NAND-type cells includes a respective ladder-type compare circuit having four two-transistor rungs. At least one of the plurality of rows includes a first 4-bit NAND-type CAM cell having a first ladder-type compare circuit with four two-transistor rungs and a second 4-bit NAND-type CAM cell having a second ladder-type compare circuit with four two-transistor rungs. A match line segment is also provided, which is connected to four source terminals of transistors in the first ladder-type compare circuit and four drain terminals of transistors in the second ladder-type compare circuit.

Abstract: A random access memory architecture and method of handling data packets is described. According to embodiments of the invention, an apparatus includes a first processing unit for receiving serial data input, a switch, and a plurality of serially connected random access memory devices. The random access memory devices transmit data packets and commands via write input ports, write output ports, read input ports, and read output ports. A method for routing data includes receiving serial data input in a first processing unit, generating a data packet based on the serial data input, transmitting the data packet to a first random access memory device via a write input port, decoding the data packet, determining whether to perform a command in the first random access memory device based on information in the data packet, and transmitting the data packet to a second random access memory device.

Abstract: Delay-locked loop (DLL) integrated circuits include digital phase comparators that are unaffected by variable duty cycle ratios. These phase comparators determine a shortest direction to phase lock before establishing a value of a compare signal (COMP) that specifies the shortest direction. The phase comparator is responsive to a reference clock signal REF and a feedback clock signal FB. These clock signals have equivalent periods and may have equivalent non-unity duty cycle ratios. The phase comparator is configured to determine whether a first degree to which the reference clock signal REF leads the feedback clock signal FB is smaller or larger than a second degree to which the reference clock signal REF lags the feedback clock signal FB. Based on this determination, the phase comparator generates a compare signal COMP that identifies a direction in time the feedback clock signal FB should be shifted to bring it into alignment with the reference clock signal REF.

Abstract: Circuits are disclosed for protecting internal circuitry of a semiconductor chip from increased power supply voltages due to electrostatic discharge (EDS). One example circuit includes a trigger circuit including a transistor and a capacitor arranged in series between DC pads. The trigger circuit generates a trigger signal to a discharge circuit connected between the DC pads to shunt charge from one of the DC pads to the other. The RC delay associated with the transistor and capacitor of the trigger circuit may be designed such that the trigger circuit generates the trigger signal in response to an ESD event, but not in response to high positive spikes on one of the DC pads during normal operation.

Abstract: A multi-queue memory system includes first and second memory blocks. The first memory block includes a first array of memory cells, a first sense amplifier circuit and a second sense amplifier circuit. The second memory block includes a second array of memory cells, a third sense amplifier circuit and a fourth sense amplifier circuit. Each of the sense amplifier circuits is independently controlled. Each queue of the multi-queue system has entries in both the first and second memory blocks. A first queue is accessed by alternately accessing the first and second arrays via the first and third sense amplifier circuits. A second queue is subsequently accessed by alternately accessing the first and second arrays via the second and fourth sense amplifier circuits.

Abstract: A method for forming CMOS devices on a semiconductor substrate is disclosed in which gate structures are formed within both the core region and the non-core region of the semiconductor substrate. The gate structures include a gate dielectric layer and a gate film stack that includes a conductive layer and an overlying hard mask. The hard mask is then removed from the gate structures in the non-core region. A salicide process is then performed so as to form a silicide layer in the non-core region. A barrier layer is formed that extends over the core region and a pre-metal dielectric film is formed that extends over the barrier layer. A selective etch process is performed so as to form self-aligned contact openings that extend through the pre-metal dielectric film and through the barrier layer in the core region. These openings are then filled with conductive material to form self-aligned contacts in the core region.

Abstract: Content addressable memory devices may include a priority encoder therein and a first tier of CAM arrays arranged side-by-side relative to each other, on a first side of the priority encoder. A priority class detector is also provided for efficiently communicating match information that is generated during a search operation. The priority class detector passes match information from a selected priority class of rows in a selected one of the CAM arrays in the first tier to the priority encoder. This operation to pass match information is performed in response to detecting a match in the selected priority class when a search operation is performed. The priority class detector performs operations to locally encode match lines associated with a respective CAM array by priority class. These match lines are associated with a plurality of consecutive rows or consecutive pairs of rows that are arranged in a repeating priority class sequence comprising different priority classes.

Abstract: A clock signal arbitration method includes arbitrating between first and second request signals generated in respective first and second clock domains that are asynchronously timed relative to each other, to obtain first arbitration results. These first arbitration results identify a relative queue priority between the first and second request signals. Additional steps are performed to transfer the first arbitration results into a third clock domain that is asynchronously timed relative to the first and second clock domains. The transfer operation may include arbitrating the first arbitration results in a third clock domain to obtain second arbitration results that confirm or correct the first arbitration results.

Abstract: Content addressable memory devices may include a priority encoder therein and a first tier of CAM arrays arranged side-by-side relative to each other, on a first side of the priority encoder. A priority class detector is also provided for efficiently communicating match information that is generated during a search operation. The priority class detector passes match information from a selected priority class of rows in a selected one of the CAM arrays in the first tier to the priority encoder. This operation to pass match information is performed in response to detecting a match in the selected priority class when a search operation is performed. The priority class detector performs operations to locally encode match lines associated with a respective CAM array by priority class. These match lines are associated with a plurality of consecutive rows or consecutive pairs of rows that are arranged in a repeating priority class sequence comprising different priority classes.

Abstract: Ripple counter circuits in integrated circuit devices can have fast terminal count capability. A terminal count circuit can be configured to mask selected unstable counter bits generated by a ripple counter circuit using an indication that a terminal state of the ripple counter circuit has been reached. Related methods are also disclosed.

Abstract: Asynchronous memory devices utilize loopback circuitry to provide efficient and high speed “flow-through” of write data when conventional flow-through operations are not available. An exemplary memory device includes a memory array having first and second ports that can each support asynchronous read and write access and a first input/output control circuit. The first input/output control circuit is electrically coupled to the first port and includes a first sense amplifier, which is configured to receive read data from the first port, and a first bypass latch having an output coupled to the first sense amplifier. A second input/output control circuit is also provided. The second input/output control circuit is electrically coupled to the second port and includes a second sense amplifier, which is configured to receive read data from the second port, and a second bypass latch.

Abstract: An integrated circuit chip includes a plurality of independent FIFO memory devices that are each configured to support all four combinations of DDR and SDR write modes and DDR and SDR read modes and collectively configured to support all four multiplexer, demultiplexer, broadcast and multi-Q operating modes.

Abstract: CAM-based search engines and packet coprocessors include control logic that supports direct reads of information that summarizes the done status of multiple contexts being handled by the search engine device. This done status information may be maintained in dedicated registers that are configured to support high bandwidth utilization from a data port of the search engine device. The control logic may also be configured to generate interrupts or asynchronous signals that notify an issuing command source of context completion.

Abstract: A content addressable memory (CAM) cell that includes a static random access memory (SRAM) cell that operates in response to a VCC supply voltage. A first set of bit lines coupled to the SRAM cell are used to transfer data values to and from the SRAM cell. The signals transmitted on the first set of bit lines have a signal swing equal to the VCC supply voltage. A second set of bit lines is coupled to receive a comparison data value. The signals transmitted on the second set of bit lines have a signal swing that is less than the VCC supply voltage. For example, the signal swing on the second set of bit lines can be as low as two transistor threshold voltages. The second set of bit lines is biased with a supply voltage that is less than the VCC supply voltage. A sensor circuit is provided for comparing the data value stored in the CAM cell with the comparison data value. The sensor circuit pre-charges a match scan line prior to a compare operation.