Abstract: Integrated circuit structures having high phosphorous dopant concentrations are described. In an example, an integrated circuit structure includes a fin having a lower fin portion and an upper fin portion. A gate stack is over the upper fin portion of the fin, the gate stack having a first side opposite a second side. A first source or drain structure includes an epitaxial structure embedded in the fin at the first side of the gate stack. A second source or drain structure includes an epitaxial structure embedded in the fin at the second side of the gate stack. Each of the epitaxial structures of the first and second source or drain structures includes silicon and phosphorous, the phosphorous having an atomic concentration in a core region of the silicon greater than an atomic concentration in a peripheral region of the silicon.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a semiconductor substrate comprising an N well region having a semiconductor fin protruding therefrom. A trench isolation layer is on the semiconductor substrate around the semiconductor fin, wherein the semiconductor fin extends above the trench isolation layer. A gate dielectric layer is over the semiconductor fin. A conductive layer is over the gate dielectric layer over the semiconductor fin, the conductive layer comprising titanium, nitrogen and oxygen. A P-type metal gate layer is over the conductive layer over the semiconductor fin.

Abstract: A thin film transistor (TFT) structure includes a gate electrode, a gate dielectric layer on the gate electrode, a channel layer including a semiconductor material with a first polarity on the gate dielectric layer. The TFT structure also includes a multi-layer material stack on the channel layer, opposite the gate dielectric layer, an interlayer dielectric (ILD) material over the multi-layer material stack and beyond a sidewall of the channel layer. The TFT structure further includes source and drain contacts through the interlayer dielectric material, and in contact with the channel layer, where the multi-layer material stack includes a barrier layer including oxygen and a metal in contact with the channel layer, where the barrier layer has a second polarity. A sealant layer is in contact with the barrier layer, where the sealant layer and the ILD have a different composition.

Abstract: A semiconductor device and method of including peripheral devices into a package is disclosed. In one example, a peripheral device includes a passive device such as a capacitor or an inductor. Examples are shown that include a peripheral device that is substantially the same thickness as a die or a die assembly. Examples are further shown that use this configuration in a fan out process to form semiconductor devices.

Abstract: Disclosed herein are components for millimeter-wave communication, as well as related methods and systems.

Abstract: Systems, apparatuses and methods may provide for technology that programs a plurality of seed values into a plurality of linear feedback shift registers (LFSRs), wherein the plurality of LFSRs correspond to a data word (DWORD) and at least two of the plurality of seed values differ from one another. The technology may also train a link coupled to the plurality of LFSRs, wherein the plurality of seed values cause a parity bit associated with the DWORD to toggle while the link is being trained. In one example, the technology also automatically selects the plurality of seed values based on one or more of an expected traffic pattern on the link (e.g., after training) or a deskew constraint associated with the link.

Abstract: This disclosure describes systems, methods, and devices related to traffic indications for multi-link devices (MLDs). A device may generate a first traffic indication map (TIM) with a first bitmap including a first indication that traffic is to be sent by a first access point (AP) device of the MLD to a first non-AP device of a second MLD using a first communication link. The device may generate a second TIM with a second bitmap including a second indication that no traffic is to be sent by a second AP device of the MLD to a second non-AP device of the second MLD using a second communication link. The device may send, using the first communication link, the beacon, the beacon including the first TIM and the second TIM. The device may send, using the first communication link, a data frame to the first non-AP device of the second MLD.

Abstract: Apparatus and method for error reduction in distributed quantum computing via fusing-and-decomposing gates. For example, one embodiment of an apparatus comprises: a quantum module comprising a plurality of qubits; unitary generation logic to combine a group of quantum gates to form at least one unitary operation; decomposition logic to decompose the unitary operation into multiple alternative gate sequences comprising either exact gate sequences or approximate gate sequences; and selection logic to evaluate the multiple alternative gate sequences based on a cost function to identify at least one of the gate sequences.

Abstract: Technologies for a high-voltage transmission gate are disclosed. In the illustrative embodiment, a companion chip is connected to a quantum processor. The companion chip provides voltages to gates of qubits on the quantum processor. The companion chip includes one or more high-voltage transmission gates that can be used to charge capacitors linked to gates of qubits on the quantum processor. The transmission gate includes transistors with a breakdown voltage less than a range of input and output voltages of the transmission gate. Control circuitry on the companion chip controls the voltages applied to transistors of the transmission gate to ensure that the voltage differences across the terminals of each transistor is below a breakdown voltage.

Abstract: In one embodiment, a processor includes: a plurality of cores each comprising a multi-threaded core to concurrently execute a plurality of threads; and a control circuit to concurrently enable at least one of the plurality of cores to operate in a single-threaded mode and at least one other of the plurality of cores to operate in a multi-threaded mode. Other embodiments are described and claimed.

Abstract: Technologies for dynamically sharing remote resources include a computing node that sends a resource request for remote resources to a remote computing node in response to a determination that additional resources are required by the computing node. The computing node configures a mapping of a local address space of the computing node to the remote resources of the remote computing node in response to sending the resource request. In response to generating an access to the local address, the computing node identifies the remote computing node based on the local address with the mapping of the local address space to the remote resources of the remote computing node and performs a resource access operation with the remote computing node over a network fabric. The remote computing node may be identified with system address decoders of a caching agent and a host fabric interface. Other embodiments are described and claimed.

Abstract: Embodiments include package substrates and method of forming the package substrates. A package substrate includes a dielectric over a conductive layer, and a conductive line on the dielectric. The package substrate includes a plurality of conductive bumps on a surface of the conductive line, where the conductive bumps are conductively coupled to the conductive line, and a solder resist over the conductive line and the dielectric. The surface of the conductive line may be a bottom surface, where the conductive bumps are below the conductive line and conductively coupled to the bottom surface of the conductive line, and where the conductive bumps may be embedded in the dielectric. The surface of the conductive line may be a top surface, where the conductive bumps are above the conductive line and conductively coupled to the top surface of the conductive line, and wherein the conductive bumps are embedded in the solder resist.

Abstract: Embodiments are generally directed to package stacking using chip to wafer bonding. An embodiment of a device includes a first stacked layer including one or more semiconductor dies, components or both, the first stacked layer further including a first dielectric layer, the first stacked layer being thinned to a first thickness; and a second stacked layer of one or more semiconductor dies, components, or both, the second stacked layer further including a second dielectric layer, the second stacked layer being fabricated on the first stacked layer.

Abstract: Embodiments of the present disclosure describe quantum circuit assemblies that include one or more filter modules integrated in a package with a quantum circuit component having at least one qubit device. Integration may be such that both the quantum circuit component and the filter module(s) are at least partially inside a chamber formed by a radiation shield structure that is configured to attenuate electromagnetic radiation incident on the quantum circuit component and the filter module(s). Placing filter modules under the protection provided by the radiation shield structure may boost coherence of the qubits. Some example filter modules may include filter(s) configured to convert electromagnetic radiation to heat and filter(s) configured to perform bandpass filtering. Modular blocks of in-line filters inside the shielded environment may allow to route signals to the quantum circuit component with reduced noise and speed up installation of a complete quantum computer.

Abstract: Embodiments described herein are generally directed to the use of sidecars to perform dynamic API contract generation and conversion. In an example, a first sidecar of a source microservice intercepts a first call to a first API exposed by a destination microservice. The first call makes use of a first API technology specified by a first contract and is originated by the source microservice. An API technology is selected from multiple API technologies. The selected API technology is determined to be different than the first API technology. Based on the first contract, a second contract is dynamically generated that specifies an intermediate API that makes use of the selected API technology. A second sidecar of the destination microservice is caused to generate the intermediate API and connect the intermediate API to the first API.

Abstract: Low-latency synchronization utilizing local team barriers for thread team processing is described. An example of an apparatus includes one or more processors including a graphics processor, the graphics processor including a plurality of processing resources; and memory for storage of data including data for graphics processing, wherein the graphics processor is to receive a request for establishment of a local team barrier for a thread team, the thread team being allocated to a first processing resource, the thread team including multiple threads; determine requirements and designated threads for the local team barrier; and establish the local team barrier in a local register of the first processing resource based at least in part on the requirements and designated threads for the local barrier.

Abstract: Through-glass vias (TGVs) are formed without the use of a planarization step to planarize the TGV fill material after filling holes that extend through a glass layer with the fill material. After the holes are filled with the fill material, the fill material is etched and the glass layer is etched. After etching of the glass is performed, the top and bottom surfaces of the glass layer are recessed relative to the top and bottom surfaces of the fill material in the holes, resulting in formation of fill material stubs. TGV pads are then formed on the fill material stubs. The resulting pads can have protrusions that extend away from a surface of the glass layer. If the TGVs are plated through-holes, a portion of the metal lining the inner wall of a TGV hole can extend past a surface of the glass layer and into a TGV pad.

Abstract: Shared local registers for thread team processing is described. An example of an apparatus includes one or more processors including a graphic processor having multiple processing resources; and memory for storage of data, the graphics processor to allocate a first thread team to a first processing resource, the first thread team including hardware threads to be executed solely by the first processing resource; allocate a shared local register (SLR) space that may be directly reference in the ISA instructions to the first processing resource, the SLR space being accessible to the threads of the thread team and being inaccessible to threads outside of the thread team; and allocate individual register spaces to the thread team, each of the individual register spaces being accessible to a respective thread of the thread team.

Abstract: Embodiments of a microelectronic assembly that includes: a package substrate, comprising buildup layers of an organic dielectric material and a plurality of layers of conductive traces in the organic dielectric material, the package substrate having a first surface and a second surface opposite the first surface; and a plurality of integrated circuit (IC) dies coupled to the package substrate on the first side. The plurality of layers of conductive traces comprises a pair of stripline traces or microstrips in one of the layers, the stripline traces or microstrips are surrounded by air gap structures in the organic dielectric material, and the air gap structures are exposed on the first surface.

Abstract: Embodiments of a microelectronic assembly comprise: an interposer structure of glass, a substrate comprising organic dielectric material, the substrate coupled to a first side of the interposer structure; and a plurality of IC dies. A first IC die in the plurality of IC dies is coupled to the substrate by first interconnects, a second IC die in the plurality of IC dies is embedded in the organic dielectric material of the substrate, the second IC die is coupled to the first IC die by second interconnects, the second IC die is coupled to the first side of the interposer structure by third interconnects, and a third IC die in the plurality of IC dies is coupled to a second side of the interposer structure by fourth interconnects, the second side of the interposer structure being opposite the first side of the interposer structure.