Abstract: A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: (a) growing a first cladding layer with a {0001} growth plane; (b) growing a guide layer on the first cladding layer; (c) forming holes in a surface of the guide layer by etching, the holes being two-dimensionally periodically arranged within a plane parallel to the guide layer; (d) etching the guide layer by using an etchant having selectivity to the {0001} plane and a {10?10} plane of the guide layer; (e) supplying a gas containing a nitrogen source to cause mass transport without supplying a group-III material gas, and then supplying the group-III material gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and (f) growing an active layer and a second cladding layer in this order on the first embedding layer.

Abstract: An optically pumped magnetometer includes cells configured to form a first cell region and a second cell region on a measurement target, a pump laser, a probe laser, a first optical system configured to cause pump light to be incident on the first cell region, a second optical system configured to cause the pump light having passed through the first cell region to be incident on the second cell region, a third optical system configured to cause first probe light to be incident on the first cell region, a fourth optical system configured to cause second probe light to be incident on the second cell region, detection portions configured to detect the first probe light having passed through the first cell region and the second probe light having passed through the second cell region, and a deriving portion configured to derive an intensity of a magnetic field.

Abstract: A method of manufacturing a surface-emitting laser, includes (a) forming a first semiconductor layer including a photonic-crystal (PC) layer, (b) growing, on the first semiconductor layer, an active layer and a second semiconductor layer, (c) performing spectrometry in which a thickness from a surface of the second semiconductor layer to a position where the spectrometry light is reflected by the PC layer is measured, (d) forming a translucent electrode having a thickness calculated based on an optical path length corresponding to the thickness obtained by the spectrometry on the second semiconductor layer, and (e) forming a reflection layer on the translucent electrode, in which the layer thickness of the translucent electrode is determined such that a light intensity of interference light of (i) direct diffracted light radiated from the PC layer and (ii) reflected diffracted light radiated from the PC layer and reflected by the reflection layer is larger than a light intensity of the direct diffracted light

Abstract: Provided in one aspect is a pharmaceutical composition for analgesia. The present disclosure relates to a pharmaceutical composition for analgesia that contains an a2 adrenergic receptor antagonist as an active ingredient. In one or more embodiments, the pharmaceutical composition according to the present disclosure is a composition for analgesia through inhibition of an a2 adrenergic receptor, or a composition for analgesia through inhibition of an a2B adrenergic receptor.

Abstract: A proton conductor is in contact with a catalyst containing platinum. The proton conductor includes a cationic organic molecule, a metal ion, and an oxoacid anion. A protic ionic liquid containing the cationic organic molecule and the oxoacid anion is coordinated to the metal ion to form a coordination polymer.

Abstract: A multiplexing optical system includes a light source, a lens and a lens array. The light source includes a plurality of light emitting elements of surface emitting lasers. The lens is configured to change and condense optical paths of laser light beams emitted from the light emitting elements. The lens array includes a plurality of lens regions arrayed so as to correspond to respective optical paths of the laser light beams changed by the lens, and is configured to condense the laser light beams by the lens regions to form a multiplexed beam.

Abstract: A method of producing renal progenitor cells from pluripotent stem cells involves culturing pluripotent stem cells in a medium containing FGF2, BMP4, a GSK-3? inhibitor, and retinoic acid or a derivative thereof, culturing the resulting cells in a medium containing FGF2, a GSK-3? inhibitor, and BMP7, culturing the resulting cells in a medium containing FGF2, a GSK-3? inhibitor, BMP7, and a TGF? inhibitor, culturing the resulting cells in a medium containing FGF2, a GSK-3? inhibitor, BMP7, activin, and a ROCK (Rho-kinase) inhibitor, culturing the resulting cells in a medium containing retinoic acid or a derivative thereof, and FGF9, and culturing the resulting cells in a medium containing a GSK-3? inhibitor and FGF9, to induce renal progenitor cells from intermediate mesodermal cells.

Abstract: A two-dimensional photonic-crystal laser includes: a substrate made of an n-type semiconductor; a p-type cladding layer on an upper side of the substrate made of a p-type semiconductor; an active layer on an upper side of the cladding layer; a two-dimensional photonic-crystal layer on an upper side of the active layer including a plate-shaped base body made of an n-type semiconductor wherein modified refractive index areas whose refractive index differs from the base body are arranged; a first tunnel layer between the substrate and cladding layer made of an n-type semiconductor having a carrier density higher than the substrate's; a second tunnel layer between the first tunnel and cladding layers, made of a p-type semiconductor having a carrier density higher than the p-type semiconductor layer's; a first electrode on a lower side of or in the substrate; and a second electrode on an upper side of the two-dimensional photonic-crystal layer.

Abstract: The invention provides a microfluidic device comprising at least one cell culture chamber, the at least one cell culture chamber being connected to at least two openings, the device being configured to supply at least one physiologically active substance from at least one of the openings to the at least one cell culture chamber in such a manner as to form a concentration gradient or concentration gradients in the at least one chamber when cells and a hydrogel are introduced into the at least one cell culture chamber to culture the cells in a 3D-gel medium.

Abstract: A semiconductor laser includes: a first semiconductor layer part including a semiconductor layer of a first conductivity type; an active layer disposed on the first semiconductor layer part; a second semiconductor layer part disposed on the active layer and including a semiconductor layer of a second conductivity type; a third semiconductor layer p100415-0433art disposed on the second semiconductor layer part and including a semiconductor layer containing a first concentration of an impurity of the first conductivity type; and a fourth semiconductor layer part disposed on the third semiconductor layer part and including a semiconductor layer containing a second concentration of the impurity of the first conductivity type, the second concentration being lower than the first concentration. The third semiconductor layer part is directly bonded to the fourth semiconductor layer part. At least one of the third semiconductor layer part or the fourth semiconductor layer part includes a photonic crystal.

Abstract: The present disclosure provides a method for treating an inflammatory condition, especially an age related inflammatory condition in a mammalian subject in need thereof, which comprises an effective amount of a virus like particle comprising a viral structural protein and a galectin-3 antigen, a composition or vaccine comprising for the purpose thereof.

Abstract: It is aimed to provide a power supply device and a power supply system which enable consumers to freely choose electrical power and specify transmission sources when receiving electrical power, and enable parties involved in transactions (power supply side and power receiving side) to reliably and safely perform transmission between them. There are provided a power supply device and a power supply system. The power supply device includes a baseband unit that generates a power signal, a modulation processing unit that modulates the power signal generated by the baseband unit to impart a code thereto for specifying a transmission source of the power signal and generates a modulated signal that can be demodulated by a power receiving device, and a transmission unit that transmits the modulated signal generated by the modulation processing unit.

Abstract: A semiconductor device includes a p-type nitride semiconductor layer, the p-type nitride semiconductor layer including an Al-containing nitride semiconductor layer and an Al-containing compound layer containing Al and C as main constituent elements and provided on the surface of the Al-containing nitride semiconductor layer.

Abstract: A SiC semiconductor device manufacturing method includes a step of etching a surface of a SiC substrate 1 with H2 gas at a temperature of 1200° C. or more, a step of forming a SiO2 film 3, 4 on the SiC substrate under conditions where the SiC substrate is not oxidized, and a step of thermally treating the SiC substrate formed with the SiO2 film in N2 gas atmosphere at a temperature of 1350° C. or more.

Abstract: A control system includes a task assigning unit, a task processing execution unit, and a reassigning unit. The task assigning unit divides a plurality of tasks dispersed in space into a plurality of groups each including one or more tasks and assign the plurality of respective groups to a plurality of respective objects of which states are changeable in the space. The task processing execution unit executes control for causing the respective objects to process the tasks of the assigned group. The reassigning unit assigns, when a processing status of a task satisfies a condition decided in advance, a task of which processing has not been ended in another group to the object that has completed processing of all the tasks of the assigned group.

Abstract: Provided is a learning support system which can enhance a learning effect by sharing a matter of interest among learners viewing a learning content. The learning support system includes: a learning content display unit configured to play and display a teaching material video; a learner information reporting unit configured to acquire biological information of a learner during play of the teaching material video and report the biological information as learner information; a region-of-attention identification unit configured to identify a region-of-attention of the learner based on the biological information; a learner information display creation unit configured to generate a screen in which the region-of-attention is superimposed on the teaching material video of another learner belonging to the same cluster as the learner; and a learner information transmission unit configured to transmit the screen to the another learner.

Abstract: According to one embodiment, a structure evaluation system includes a plurality of sensors, an acquirer, a calculator, and an evaluator. The plurality of sensors detects elastic waves generated from the structure. The acquirer acquires detection information for an evaluation target period in which information on at least an amplitude of each elastic wave detected by each of the plurality of sensors is associated with time information on the time when each elastic wave is detected. The calculator calculates an evaluation value, which is a slope of an amplitude scale-based frequency distribution of elastic waves, every predetermined period based on the acquired detection information for the evaluation target period. The evaluator evaluates a deterioration state of the structure based on the time-series data of each evaluation value calculated every predetermined period.

Abstract: A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: growing a first cladding layer with a {0001} growth plane; growing a guide layer on the first cladding layer; forming holes which are two-dimensionally periodically arranged within the guide layer; etching the guide layer by ICP-RIE using a chlorine-based gas and an argon; supplying a gas containing a nitrogen to cause mass-transport, and then supplying the group-III gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and growing an active layer and a second cladding layer on the first embedding layer, The step includes a step of referring to already-obtained data on a relationship of an attraction voltage and a ratio of gases in the ICP-RIE with a diameter distribution of air holes embedded, and applying the attraction voltage and the ratio to the ICP-RIE.

Abstract: A method for acquiring and producing high-purity renal progenitor cells from a renal progenitor cell population into which pluripotent stem cells are induced to differentiate, by identifying a cell surface antigen marker specific to renal progenitor cells. The high-purity renal progenitor cells can be used in regenerative medicine for renal diseases, such as renal failure.

Abstract: A photonic-crystal surface-emitting laser element includes: a first semiconductor layer formed by embedding a photonic crystal layer that includes air holes arranged with two-dimensional periodicity in a formation region in a plane parallel to the photonic crystal layer; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a mesa portion with a mesa shape formed at a surface of the second semiconductor layer, wherein the mesa portion is located inside the formation region of the air holes when viewed in a direction perpendicular to the photonic crystal layer.