Abstract: There is provided a semiconductor device comprising a semiconductor substrate having an active area in which a plurality of active elements are formed, and a non-active area excepting the active area; at least one electrode pad electrically connected to any of the active elements. At least one Through Silicon VIA electrode is formed, being electrically connected to the electrode pad by way of the non-active area. The non-active area has an insulating region obtained by forming an insulating film on the semiconductor substrate, and a dummy section obtained by leaving a base material of the semiconductor substrate in the insulating region. The dummy section is provided in a position where an outer edge of the Through Silicon VIA electrode does not intersect with the boundary between the insulating region and the dummy section.

Abstract: The display apparatus includes: N differential amplifiers having output ends, amplifying N input voltages and outputting amplified voltages, and a resistor ladder having N voltage supply points connected to the output ends of the N differential amplifiers and M voltage output points outputting M level voltages. The M voltage output points are connected to capacitive loads on input sides of the amplifiers, and at least one N differential amplifier has an input pair and an output end connected to one of the N voltage supply point. One of the N input voltages is received by one of the input pair, the other one of the input pair is connected to one of the M voltage output points outputting a level voltage closest to a voltage at the one voltage supply point. The one voltage supply point and the one voltage output point are at different positions on the resistor ladder.

Abstract: A sound source playback unit plays back sound data from a sound source and outputs a playback signal. An amplification unit amplifies the playback signal and outputs the playback signal as an output signal converted to sound in a speaker. A fault detection unit including a first conversion circuit compares the playback signal to a predetermined first threshold, converts a waveform of the playback signal, and outputs the converted waveform as a converted playback signal. A second conversion circuit compares the output signal to a predetermined second threshold, converts a waveform of the output signal, and outputs the converted waveform as a converted output signal. A comparison circuit compares the converted playback signal to the converted output signal, and a determination circuit determines an output of the comparison circuit. Based on the determination, the fault detection unit detects a fault in the amplification unit.

Abstract: The semiconductor device includes a semiconductor substrate of first conductivity type including a cell area and a peripheral area surrounding cell area on a principal surface thereof, a first diffusion layer which is disposed in peripheral area, surrounds the cell area and has a second conductivity type different from the first conductivity type, an electrode which is disposed in the peripheral area, is in contact with the principal surface through an opening provided in an insulating member and is connected to the first diffusion layer, and a second diffusion layer of the first conductivity type which is formed on the principal surface of a region enclosed in the electrode distant from the first diffusion layer when viewed in a direction perpendicular to the principal surface and includes a linear portion having a first width and a curved portion having a portion with a second width greater than the first width.

Abstract: A communication circuit, a communication system, and a self-diagnosis method of the communication circuit, which facilitate specifying a failed part which causes a communication failure when a communication failure occurs in a communication system, are provided. A serial signal for self-diagnosis is supplied to a first conversion unit, a pulse signal for self-diagnosis corresponding to the serial signal for self-diagnosis output from the first conversion unit is input to a second conversion unit instead of a pulse signal received by a pulse signal reception unit, and the serial signal corresponding to the pulse signal for self-diagnosis output from the second conversion unit is transmitted to the outside via a serial signal transmission unit.

Abstract: An imaging device and a horizontal direction detection method capable of detecting a horizontal angle of a camera with high accuracy in a simple configuration are provided. The imaging device includes an imaging unit configured to obtain image data by photographing a predetermined subject, an image rotation unit configured to cause a display image based on the image data to be rotated on a display plane step by step, a count unit configured to count the number of pixels of a specific color included in the display image in a scanning line direction within the display plane and obtain a count value for each of rotated display images, and a determination unit configured to determine a horizontal direction of a photographing angle of the imaging unit based on the count value for each of the rotated display images.

Abstract: The display apparatus includes: N differential amplifiers having output ends, amplifying N input voltages and outputting amplified voltages, and a resistor ladder having N voltage supply points connected to the output ends of the N differential amplifiers and M voltage output points outputting M level voltages. The M voltage output points are connected to capacitive loads on input sides of the amplifiers, and at least one N differential amplifier has an input pair and an output end connected to one of the N voltage supply point. One of the N input voltages is received by one of the input pair, the other one of the input pair is connected to one of the M voltage output points outputting a level voltage closest to a voltage at the one voltage supply point. The one voltage supply point and the one voltage output point are at different positions on the resistor ladder.

Abstract: A semiconductor device includes a resistor element connected to one and another end of a crystal oscillator, and an adjustable current type inverter element having an input connected to one end of the resistor element and an output connected to another end of the resistor element. A first capacitor element is connected to the input of the inverter element and to ground, and a second capacitor element has one end connected to ground. A first switching element switches a connection state of the one end of the first capacitor element and another end of the second capacitor element. A third capacitor element is connected to the output of the inverter element and to ground, and a fourth capacitor element has one end connected to ground. A second switching element switches a connection state of the one end of the third capacitor element and another end of the fourth capacitor element.

Abstract: A power-on clear circuit includes a first inverter unit including a constant current transmission unit having one end supplied with a first power supply voltage, and a first transistor having a first terminal connected to a second line kept at a fixed potential, a second terminal connected to the other end of the constant current transmission unit, and a control terminal receiving application of a second power supply voltage which varies to follow the first power supply voltage; a second inverter unit that operates on the basis of the first power supply voltage, and to which a potential of a first node is input, the first node is connected between the other end of the constant current transmission unit and the first terminal of the first transistor; and a signal outputting unit that outputs a power-on clear signal in accordance with an output of the second inverter unit.

Abstract: A device with pillar-shaped components, includes a substrate; a wiring layer disposed on the substrate; and pillar-shaped components disposed on any of the substrate and the wiring layer, each of the pillar-shaped components having a bottom part connected to the substrate and/or the wiring layer, a top part opposed to the bottom part, and a lateral face part extending from the bottom part and connected to the top part; wherein each of the pillar-shaped components includes a first pillar-shaped part formed by plating, a second pillar-shaped part formed on the first pillar-shaped part by plating, and a ring-like projection part formed on the lateral face part to project outward and extend in a circumferential direction, and to be in a position higher than a joint position between the first pillar-shaped part and the second pillar-shaped part.

Abstract: The present invention includes: a first decoder that outputs mutually different two voltages as first and second selection voltages based on a first bit group of a digital data signal in a first selection state, and outputs one or both of the two voltages as the first and the second selection voltages in a second selection state; a second decoder that outputs mutually different two voltages as third and fourth selection voltages based on a second bit group of the digital data signal in the first selection state and outputs one voltage based on the second bit group as the third and the fourth selection voltages in the second selection state; and an amplifier circuit that averages a combination of the first and the second selection voltages or the third and the fourth selection voltages with predetermined weighting ratios and outputs the averaged voltage.

Abstract: A display driver according to the present invention includes a control part and a fault detection circuit. The control part sequentially incorporates first fault detection data and second fault detection data into a video signal during non-display periods of the video signal. The fault detection circuit binarizes each of a first pixel driving voltage and a second pixel driving voltage with a predetermined threshold voltage to obtain a first signal and a second signal. The first pixel driving voltage is generated based on the first fault detection data. The second pixel driving voltage is generated based on the second fault detection data. The fault detection circuit determines whether the first signal and the second signal match and outputs a fault detection signal that indicates a presence of a fault when the first signal and the second signal match.

Abstract: The disclosure provides a semiconductor device that can reduce the area of the circuit elements formed thereon. The semiconductor device includes a first conductivity type region formed on a substrate and formed with a resistance element surrounded by an insulating film; a second conductivity type region laminated in contact with an upper surface of the resistance element; a capacitor formed on the resistance element via an interlayer insulating layer; a via electrically connecting a terminal of the resistance element and a terminal of the capacitor in series; and a power supply line and a ground line electrically connected to the other terminal of the resistance element and the other terminal of the capacitor respectively.

Abstract: A semiconductor device includes: a boosting section configured to output a second voltage boosted from a first voltage; a voltage lowering section configured to output a lowered voltage that has been lowered from the second voltage by a predetermined voltage; a first buffer amp including a non-inverting input terminal connected to an output of the voltage lowering section; a second buffer amp including a non-inverting input terminal that is input with the first voltage; and a difference output section configured to output a voltage corresponding to a difference between output of the first buffer amp and output of the second buffer amp.

Abstract: A voltage generating circuit, a semiconductor memory device, and a voltage generating method are provided. The voltage generating circuit includes: an oscillation signal generating part generating an oscillation signal that alternately repeats a state of a first voltage and a state of a second voltage; a capacitor having one end receiving the oscillation signal and an other end connected to an output node; a switch element receiving a control voltage and set to an on state or an off state according to the control voltage, and applying the first voltage to the output node when set to the on state; and a switch control part supplying, as the control voltage to the switch element, the second voltage when the oscillation signal is in the state of the first voltage, and a voltage of the output node when the oscillation signal is in the state of the second voltage.

Abstract: A semiconductor device includes: a first buffer at which a predetermined signal is input and that outputs a first output signal; a second buffer at which an inverted signal of the predetermined signal is input and that outputs a second output signal; and a short circuit detection circuit that, in accordance with a potential difference between the first output signal and the second output signal, outputs a short circuit evaluation signal evaluating whether or not there is a ground fault in at least one of a first terminal at an output side of the first buffer or a second terminal at an output side of the second buffer or evaluating whether or not there is a short circuit between the first terminal and the second terminal.

Abstract: Display apparatuses, data drivers and display controller are provided. The data drivers receive video signals, generate positive-polarity and negative-polarity gradation data signals with respect to a predetermined reference voltage based on the video signals, output the positive-polarity gradation data signals to one of a first and a second data line groups, and output the negative-polarity gradation data signals to the other data line group. The data drivers generate, as the positive-polarity gradation data signals, signals in which data pulses each having a positive-polarity analog voltage value corresponding to a luminance level of each pixel based on the video signal appear in predetermined cycles, and generate, as the negative-polarity gradation data signals, signals where data pulses each having a negative-polarity analog voltage value corresponding to a luminance level of each pixel appear in each predetermined cycle with phases different from the positive-polarity gradation data signals.

Abstract: There is provided a semiconductor device having a timing generator that generates synchronization signals so as to match input timings of serial audio data input from an external source, a reproduction processor that, based on the synchronization signals, reads audio data from memory, performs reproduction processing, and outputs a plurality of channel information items, and a mixer that mixes the plurality of channel information items with the serial audio data, and reproduces an audio signal.

Abstract: A passive radio frequency identification (RFID) tag includes: a rectifier circuit that rectifies a signal obtained from an antenna and outputs the rectified signal as a DC voltage. A capacitor is connected to an output line of the rectifier circuit. A first regulator circuit generates a first regulator voltage by stabilizing the output DC voltage from the rectifier circuit. A control circuit starts operating when the first regulator voltage is applied, and the control circuit generates a control signal upon receipt of the modulation signal section of the wireless signal. A second regulator circuit generates a second regulator voltage by stabilizing the output DC voltage from the rectifier circuit in response to the control signal and outputs the second regulator voltage to the outside.

Abstract: A semiconductor device manufacturing method including preparing a semiconductor substrate including an electrode; forming a wire connected to the electrode; forming a first insulating film including a first opening that partially exposes the wire; forming a base portion that is connected to a portion of the wire exposed via the first opening, and that includes a conductor including a recess corresponding to the first opening; forming a solder film on a surface of the base portion; and fusing solder included in the solder film by a first heat treatment, and filling the recess with the fused solder.