Abstract: A white light emitting device including: a blue light emitting diode chip having a dominant wavelength of 443 to 455 nm; a red phosphor disposed around the blue light emitting diode chip, the red phosphor excited by the blue light emitting diode chip to emit red light; and a green phosphor disposed around the blue light emitting diode chip, the green phosphor excited by the blue light emitting diode chip to emit green light, wherein the red light emitted from the red phosphor has a color coordinate falling within a space defined by four coordinate points (0.5448, 0.4544), (0.7079, 0.2920), (0.6427, 0.2905) and (0.4794, 0.4633) based on the CIE 1931 chromaticity diagram, and the green light emitted from the green phosphor has a color coordinate falling within a space defined by four coordinate points (0.1270, 0.8037), (0.4117, 0.5861), (0.4197, 0.5316) and (0.2555, 0.5030) based on the CIE 1931 color chromaticity diagram.

Abstract: A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of each of the V-pits, an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits, and a second conductivity type nitride semiconductor layer disposed on the active layer. The nitride semiconductor light emitting device, when receiving static electricity achieves high resistance to electrostatic discharge (ESD) since current is concentrated in the V-pits and the silicon compound placed on dislocations caused by lattice defects.

Abstract: A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

Abstract: There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

Abstract: An LED package having an anodized insulation layer which increases heat radiation effect to prolong the lifetime LEDs and maintains high luminance and high output, and a method therefor. The LED package includes an Al substrate having a reflecting region and a light source mounted on the substrate and connected to patterned electrodes. The package also includes an anodized insulation layer formed between the patterned electrodes and the substrate and a lens covering over the light source of the substrate. The Al substrate provides superior heat radiation effect of the LED, thereby significantly increasing the lifetime and light emission efficiency of the LED.

Abstract: There are provided a switching module and a switching synchronization system. The switching module includes a plurality of first to n-th switching modules according to an exemplary embodiment of the present invention, wherein each of the first to n-th switching modules includes: a button unit that includes a plurality of switching buttons; a state display unit that includes a plurality of display lamps corresponding to each of the plurality of switching buttons in the button unit; a switch controller that controls the operation of the state display unit according to the operation of each of the plurality of switching buttons in the button unit; and a switch communication unit that transmits the wireless switching control signal including the switching control and provides the switching control signals included in the wireless switching control signals received to the switch controller.

Abstract: A high intensity LED based lighting array for use in an obstruction light with efficient uniform light output is disclosed. The high intensity LED based lighting array has a ring assembly having a plurality of reflectors and light emitting diodes. The ring assembly has a planar surface mounting each of the plurality of primary reflectors in perpendicular relation to a respective one of the plurality of light emitting diodes. A secondary diffuser is positioned on the ring to mix light from the light emitting diodes to create a uniform light emission in a range of azimuth angles.

Abstract: Interfaces for electrical (e.g., lighting) devices involve use of electrically conductive edge contacts arranged on or protruding from edges of printed circuit boards (PCBs) that provide or facilitate electrical connections to first and second externally accessible electrical contacts, such as may include threaded and foot contacts of a lighting device including a screw-shaped male base. First and/or second edge contacts of a PCB may protrude through first and second openings in a housing to form first and second externally accessible contact, or directly engage first and second externally accessible contact elements associated with (e.g., retained by) the housing. A contact element retained by a housing may define a slot in the interior of the housing to directly engage an edge contact of the PCB. Electric power is supplied to the PCB via edge contacts without need for intervening wires or soldered connections.

Abstract: In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.

Abstract: There is provided an LED driving circuit including: at least one ladder network circuit including: (n+1) number of first branches connected in parallel with one another by n number of first middle junction points between a first junction point and a second junction point, where n denotes an integer satisfying n?2, (n+1) number of second branches connected in parallel with one another by n number of second middle junction points between the first junction point and the second junction point, the (n+1) number of second branches connected in parallel with the first branches; and n number of middle branches connecting the first and second middle junction points of an identical m sequence to each other, respectively, wherein each of the first and second, and middle branches comprises at least one LED device.

Abstract: A method of fabricating a vertical structure nitride semiconductor light emitting device having a cross-sectional shape of a polygon having five or more sides or a circle. A light emitting structure is formed on a sapphire substrate. A metal layer having a plurality of patterns is formed on the light emitting structure. The patterns of the metal layer each have a shape corresponding to a cross-sectional shape of a wanted final light emitting device and are spaced apart by a predetermined distance such that an upper surface of the light emitting structure is partially exposed. The light emitting structure is divided into a plurality of individualized light emitting structures by removing the light emitting structure below the exposed region between the patterns of the metal layer. The sapphire substrate is separated from the light emitting structure by irradiating a laser beam.

Abstract: Disclosed herein are a system and a method for controlling lighting. In the lighting control system, one or more lighting devices are installed in a separate area within a building and a remote controller generates a scheduling data by setting lighting scenes at each time and controls the lighting of the corresponding lighting device via a short range wireless communication. In addition, the remote controller transmits the scheduling data to a remote server through a gateway and when the remote controller is not normally operated, the remote server controls the lighting device according to the scheduling data through the gateway.

Abstract: A light guide for interfacing between a light source having a light emitting surface with a first shape and a light receiver with a light receiving surface of a second shape. The light guide has a light emitting end having a first shape of substantially the same size as the first shape of the light emitting surface. A light receiving end has a second shape of substantially the same size as the second shape of the light receiving surface. A free form body between the light emitting end and the light receiving end causes a transition between the first and second shape.

Abstract: A multilayered white light emitting diode and a method of fabricating the same include forming a phosphor mixture layer including a green phosphor and a blue phosphor on a UV light emitting diode and forming a red quantum dot layer on the phosphor mixture layer. In the white light emitting diode of the present invention, the quantum dots are excited by green and blue visible light, thus increasing luminescence efficiency and realizing stable white light. Moreover, the white light emitting diode can be widely used as a light source having high output and high efficiency, thus being capable of substituting for a backlight unit of an illumination device or display device.

Abstract: A dimming buck type light emitting diode (LED) driving apparatus includes a main switch controlling a driving current flowing into an LED; a current detector detecting a driving current flowing into the LED; a power level determination unit determining a level of the driving power; a dimming capacitor for dimming control; a dimming control unit controlling charging and discharging of the dimming capacitor according to a power level determination signal and an enable signal; a reset circuit unit generating a reset signal according to a detection voltage from the current detector and a voltage of the dimming capacitor; a pulse generation unit generating a pulse signal; and a latch set by the pulse signal of the pulse generation unit and reset by the reset signal of the reset circuit unit to generate a switching signal, and turning on and off the main switch using the switching signal.

Abstract: Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.

Abstract: The invention provides an LED package capable of effectively releasing heat emitted from an LED chip out of the package and a fabrication method thereof. For this purpose, at least one groove is formed on an underside surface of the substrate to package the LED chip and the groove is filled with carbon nanotube material. In the LED package, a substrate having at least one groove on the underside surface is prepared. A plurality of electrodes are formed on a top surface of the substrate. Also, at least the one LED chip is mounted over the substrate to have both terminals electrically connected to the upper electrodes. In addition, carbon nanotube filler is filled in the groove of the substrate.

Abstract: The invention provides a high quality composite phosphor powder which ensures diversity in emission spectrum, color reproduction index, color temperature and color, a light emitting device using the same and a method for manufacturing the composite phosphor powder. The composite phosphor powder comprises composite particles. Each of the composite particles includes at least two types of phosphor particles and a light transmitting binder. The phosphor particles have different emission spectrums. In addition, the light transmitting binder is formed between the phosphor particles and binds them together.