Abstract: A semiconductor light emitting device having a multiple pattern structure greatly increases light extraction efficiency. The semiconductor light emitting device includes a substrate and a semiconductor layer, an active layer, and an electrode layer formed on the substrate, a first pattern defining a first corrugated structure between the substrate and the semiconductor layer, and a second pattern defining a second corrugated structure on the first corrugated structure of the first pattern.

Abstract: A chip coated LED package and a manufacturing method thereof. The chip coated LED package includes a light emitting chip composed of a chip die-attached on a submount and a resin layer uniformly covering an outer surface of the chip die. The chip coated LED package also includes an electrode part electrically connected by metal wires with at least one bump ball exposed through an upper surface of the resin layer. The chip coated LED package further includes a package body having the electrode part and the light emitting chip mounted thereon. The invention improves light efficiency by preventing difference in color temperature according to irradiation angles, increases a yield, miniaturizes the package, and accommodates mass production.

Abstract: A vertical GaN-based LED comprises an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having an irregular-surface structure which includes a first irregular-surface structure having irregularities formed at even intervals and a second irregular-surface structure having irregularities formed at uneven intervals, the second irregular-surface structure being formed on the first irregular-surface structure; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

Abstract: There are provided a plane light source and an LCD backlight unit having the same. A plane light source having a plurality of light emitting devices arranged in a light emitting device matrix having rows and columns at a substrate according to an aspect of the invention includes a first matrix having a plurality of light emitting devices arranged in rows and columns; and a second matrix having a plurality of light emitting devices arranged in rows and columns, each of the light emitting devices located within a quadrangle formed by four neighboring light emitting devices included in the first matrix, wherein a pitch S between one light emitting device included in the light emitting device matrix and another light emitting device most adjacent to the one light emitting device satisfies the following equation to obtain uniform luminance distribution at a position distant from a light emitting surface of the light emitting device by an optical length l, S.ltoreq.12.times.tan(.theta.2+.alpha.), Equation where—.

Abstract: The invention relates to a centrifuge with a drive head which can be connected with a drive, a rotor which can detachably be mounted on the drive head, at least one connection element with which the drive head can be connected in a torsion-proof manner with the rotor, and at least one coupling element which is attached to the drive head and is able to exert an axial force on the rotor in such a way that the rotor can be fixed axially, with the axial force increasing with the rising rotational speed of the drive head, with the coupling element on the rotor transmitting the axial force by means of a ramp surface which is inclined at an angle (?) relative to the horizontal line in a range of more than 0° to 15°. Secure locking of the rotor during standstill and high speeds can thus be achieved.

Abstract: A semiconductor light emitting device includes: a substrate; a plurality of light emitting cells arranged on the substrate, each of the light emitting cells including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light; an interconnection structure electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of the light emitting cell to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell; and a light conversion part formed in at least a portion of a light emitting region defined by the plurality of light emitting cells, the light conversion part including at least one of a red light conversion part having a red light conversion material and a green light conversion part having a green light conversion material.

Abstract: The present invention provides a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer which are sequentially stacked, wherein an area where the first electrode layer and the first semiconductor layer are in contact with each other is 3 to 13% of an area of the semiconductor light emitting device.

Abstract: Provided is a method of manufacturing a light emitting diode (LED) package, the method including the steps of: preparing a package substrate having an LED chip mounted thereon; preparing a mold which has a convex portion, a plane portion extending outward from the convex portion, and a projecting portion formed on the lower surface of the plane portion, the projecting portion having a sharp end; engaging the mold with the package substrate such that the projecting portion is contacted with the surface of the package substrate; and filling transparent resin into the convex portion.

Abstract: There is provided a nitride semiconductor device including an active layer of a superlattice structure. The nitride semiconductor device including: a p-type nitride semiconductor layer; an n-type nitride semiconductor layer; and an active layer disposed between the p-type and n-type nitride layers, the active layer comprising a plurality of quantum barrier layers and quantum well layers deposited alternately on each other, wherein the active layer has a superlattice structure where the quantum barrier layer has a thickness for enabling a carrier injected from the p-type and n-type nitride semiconductor layers to be tunneled therethrough, and at least one of the quantum barrier layers has an energy band gap greater than another quantum barrier layer adjacent to the n-type nitride semiconductor layer.

Abstract: A novel submount for the efficient dissipation of heat away from a semiconductor light emitting device is described, which also maintains efficient electrical conductivity to the n and p contacts of the device by separating the thermal and electrical conductivity paths. The submount comprises at least the following constituent layers: a substrate (400) with thermally conductive properties; a deposited layer (402) having electrically insulating and thermally conducting properties disposed on at least a region of the substrate having a thickness of between 50 nm and 50 microns; a patterned electrically conductive circuit layer (404) disposed on at least a region of the deposited layer; and, a passivation layer at least partially overcoating a top surface of the submount. Also described is a light emitting module employing the substrate and a method of manufacture of the submount.

Abstract: A light emitting diode (LED) array module includes a plurality of LEDs; and a substrate which mounts the LEDs and has a built-in cooling device for cooling heat generated when the LED is driven. The cooling device includes a heat radiation space formed on the substrate and a minute passage member which is wick- or mesh-structured to form a plurality of minute passages that operate by a heat pipe principle in the heat radiation space. The cooling device operating by the heat pipe principle is integrally formed on the substrate mounted with the LEDs, so heat radiation performance of the LEDs is enhanced, such that the LEDs can operate stably for a long time.

Abstract: A projection system includes a light source module illuminating a plurality of monochromic lights, at least one optical modulator modulating the lights illuminated by the light source module according to each of color signals, a color combining prism combining the monochromic lights modulated by the optical modulator to form an image, and a projection lens projecting the image formed by the color combining prism toward a screen. A semiconductor diode including a P type semiconductor layer, an intrinsic semiconductor layer, and an N type semiconductor layer to absorb or transmit the monochromic lights according to the value of a reverse bias voltage is arranged in units of pixels.

Abstract: A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.

Abstract: A light emitting diode (LED) package includes: a main body mounted on a substrate; a light emitting diode that is mounted in the main body and emits light; and a lead frame exposed to allow the main body to be selectively top-mounted or side-mounted. A backlight unit includes: a light guide plate configured to allow a light source to proceed to a liquid crystal panel; a light emitting diode (LED) mounted in a main body mounted on a substrate and generating a light source; and an LED package having a lead frame exposed to allow the main body to be selectively top-mounted or side-mounted, and being mounted on the light guide plate.

Abstract: A light guiding device and in particular to a light guiding device that can be used for illumination, backlighting, signage or display purposes is described. The light guiding device comprises a transparent base substrate, upon a first surface of which are mounted light sources, and a guide substrate arranged so as to encapsulate the light sources upon the first surface. In this way the guide substrate provides a means for guiding light produced by the one or more light sources over the first surface. The incorporation of scattering structures along with appropriate choice of the refractive indices of the various layers provides a highly flexible light guiding device that is typically less than 1 mm thick. The described light guiding device provides particular application as a seven segment display.

Abstract: Light engine modules comprise a support member and a solid state light emitter, in which (1) the emitter is mounted on the support member, (2) a region of the support member has a surface with a curved cross-section, (3) the emitter and a compensation circuit are mounted on the support member, (4) an electrical contact element extends to at least two surfaces of the support member, and/or (5) a substantial entirety of the module is located on one side of a plane and the emitter emits light into another side of the plane. Also, a module comprising means for supporting a light emitter and a light emitter. Also, a lighting device comprising a housing member and a light emitter mounted on a removable support member. Also, a lighting device comprising a module mounted in a lighting device element. Also, a method comprising mounting a module to a lighting device element.

Abstract: Provided is a white light emitting diode (LED) including a blue LED chip; and yellow, green, and red light emitting phosphors that are coated on the blue LED chip at a predetermined mixing ratio and converts light, emitted from the blue LED chip, into white light.

Abstract: There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.