Abstract: An insulation structure for high temperature conditions and a manufacturing method thereof. In the insulation structure, a substrate has a conductive pattern formed on at least one surface thereof for electrical connection of a device. A metal oxide layer pattern is formed on a predetermined portion of the conductive pattern by anodization, the metal oxide layer pattern made of one selected from a group consisting of Al, Ti and Mg.

Abstract: A white light emitting device is disclosed. The white light emitting device includes a blue light emitting diode (LED) including a plurality of active layers generating different peak wavelengths, and phosphors emitting yellow light when excited by light emitted from the blue LED. The white light emitting device ensures enhanced excitation efficiency of the phosphors, and high luminance.

Abstract: A facet extraction LED improved in light extraction efficiency and a manufacturing method thereof. A substrate is provided. A light emitting part includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially stacked on the substrate. A p-electrode and an n-electrode are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively. The p- and n-electrodes are formed on the same side of the LED. The light emitting part is structured as a ring.

Abstract: An optical module for an lighting fixture for providing roadway illumination. The optical module comprising circuit board having a plurality of light emitting diodes (LEDs). A reflector cups surrounds each of the plurality of LEDs, the cup comprises a narrow end surrounding the LED and a larger opening at a second end opposite the LED. A refractor lens cover comprising a plurality of molded lens, each lens positioned at the second end of the reflector cups.

Abstract: A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 ?m; and an n-electrode pad formed on the n-type nitride semiconductor layer.

Abstract: An LED light source is disclosed that is configured to be retrofit to an existing lamp fixture. The existing lamp fixture is of the type including a ballast housing for providing electrical power. The retrofit assembly includes a central support connectable to the ballast housing. A circuit board is mounted to the support. The circuit board includes one or more LEDs. A dome is mounted to the support and covers the LEDs. A circumferential heat sink is mounted around the support and extends radially beyond the ballast housing to carry heat directly away from the circuit board and support.

Abstract: A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 ?m; and an n-electrode pad formed on the n-type nitride semiconductor layer.

Abstract: A light emitting diode (LED) lighting roadway lighting fixture and housing is provided. The lighting fixture comprises a center section enclosing a power supply for the LEDs. Two LED sections are positioned on either side of the center section and angled towards the center of the lighting fixture and the plane to be illuminated. LED engines are mounted on the LED sections to illuminate the plane.

Abstract: There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.

Abstract: Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having increased efficiency and increased output properties. The method may include forming a sacrificial layer having a wet etching property on a substrate, forming a protective layer on the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth, and facilitating epitaxial growth of a semiconductor layer to be formed on the protective layer, forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer, and removing the substrate from the semiconductor device by wet etching the sacrificial layer.

Abstract: A light emitting diode having high light extraction efficiency and a method of manufacturing the same are provided. The LED includes a semiconductor multiple layer including an active layer; a transparent electrode layer formed on the semiconductor multiple layer; and refraction field unit embedded in the transparent electrode layer and formed of a material having a different refractive index than the transparent electrode layer.

Abstract: A lighting device in which a solid state light emitter in a first multi-chip light emitter is spatially offset relative to a solid state light emitter in a second multi-chip light emitter. A lighting device comprising first, second and third multi-chip light emitters, in which any solid state light emitter in the second multi-chip light emitter that is spatially offset relative to a first solid state light emitter on the first multi-chip light emitter by less than 10 degrees emits light of a hue that differs from the hue of light emitted by the first solid state light emitter by more than seven MacAdam ellipses. A solid state light emitter support member comprising a center region and at least first, second and third protrusions extending from the center region. A lighting device comprising at least a first housing member, and means for emitting substantially uniform light.

Abstract: There is provided an LED module, including a bar type circuit substrate formed with at least one groove so as to have a reflecting cup; a plurality of LED chips disposed in the groove of the circuit substrate and linearly arranged in a longitudinal direction of the circuit substrate; and a phosphor film spaced apart from the LED chips and disposed on the circuit substrate to cover the entire groove.

Abstract: There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

Abstract: A camera flash lens for a plurality of light emitting diodes (LEDs) mounted on a board and serving as a light source of a camera flash, includes a plurality of annular lenses corresponding to the plurality of LEDs, respectively. The plurality of annular lenses each include an edge portion extending toward the board to reflect and collect light emitted from the edge of a corresponding LED of the plurality of LEDs, and a central portion having an inner surface with a Fresnel shape or a curved shape to collect light emitted from the top of the corresponding LED.

Abstract: Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.

Abstract: Disclosed are a method of electroless nickel-gold plating an object and a printed circuit board. The method in accordance with an embodiment of the present invention includes: forming a first nickel plated layer on a surface of the object; forming a second nickel plated layer on the first nickel plated layer; and forming a gold plated layer on the second nickel plated layer.

Abstract: Disclosed is a light emitting diode retrofit unit including a main body housing electronics having a first end and a second end, an electrical connector at the first end of the main body and rotatably attached to the main body via a commutator, a first LED module connected at the second end of the main body via a first connector, a second LED module connected to the main body via a second connector, and a plurality of LEDs in each of the first and second LED modules.