Abstract: An apparatus for allowing display modules to communicate information about themselves to other display modules in the same display panel, comprising a module-based display panel wherein each face of the panel comprises a plurality of display modules, wherein the transmitters, receivers and/or transceivers are configured so that each transmitter or transceiver on a given display module is adjacent to a receiver or transceiver on an adjacent display module, wherein the transmitters or transceivers on a given display module transmit information about that display module to the adjacent receivers or transceivers, wherein the receivers or transceivers on a given display module receive information about the adjacent display module from the adjacent transmitters or transceivers, and wherein the information is used by the display modules and/or a main controller to determine the location of the display module within a display panel.

Abstract: Disclosed is a light emitting diode bulb having a base member having a first surface and a second surface, an electrical connector at the first surface of the base member, a plurality of light emitting diode modules stacked on the second surface and along an axis line, a region defined by two radii extending from the axis and an outer periphery of the plurality of light emitting diodes modules, and a plurality of side-emitting light emitting diodes on each of the plurality of light emitting diode modules wherein the plurality of side-emitting light emitting diodes is within the region.

Abstract: Disclosed is a LED bulb having side-emitting LED modules with heatsinks therebetween which includes a base member having a first surface and a second surface, an electrical connector at the first surface of the base member, a plurality of light emitting diode modules stacked on the second surface, wherein each of the light emitting diode modules have top surface on which a plurality of light emitting diodes are positioned and a bottom surface opposite to the top surface, and a plurality of heatsinks positioned between every other one of the plurality of light emitting diode modules.

Abstract: Provided is a side light emitting type semiconductor laser diode in which a dielectric layer is formed on an active layer. The side light emitting type semiconductor laser diode includes an n-clad layer, an n-light guide layer, an active layer and a p-light guide layer sequentially formed on a substrate, and a dielectric layer with a ridge structure formed on the p-light guide layer.

Abstract: Disclosed is a light emitting diode lamp including a plurality of LED modules having a plurality of LEDs, the plurality of LEDs being arranged in a plurality of zones, a plurality of drive modules each respectively providing pulsed direct current power to one of the plurality of zones, and LED lamp controller electrically connected to the plurality of drive modules.

Abstract: A light emitting device package is provided. The light emitting device package comprises a base substrate on which a wiring pattern is formed; a light emitting device mounted on the base substrate to emit light when supplied with driving power through the wiring pattern; a molded lens stably seated on the base substrate and having an inner space for sealing the light emitting device and reflective surfaces formed along outer sides facing the inner space to guide light from the light emitting device in an effective display direction; and a sealing resin between the inner space to bond the base substrate to the molded lens, whereby the packaging structure is simplified so that an assembly process and reliability testing are simplified, process losses due to defects are minimized, and the light extraction efficiency from the light emitting device and heat-dissipation performance are improved.

Abstract: Provided is a method of forming a fine pattern having a pattern dimension of 1 ?m or less, repeatedly with reproducibility. The method of forming the fine pattern includes: forming an azobenzene-functionalized polymer film on an etched layer; irradiating the azobenzene-functionalized polymer film using an interference laser beam to form a patterned azobenzene-functionalized polymer film having fine-patterned surface relief gratings by a photophysical mass transporting of the azobenzene-functionalized polymer; etching the etched layer using the azobenzene-functionalized polymer film having the surface relief grating patterns as an etching mask; and removing the patterned azobenzene-functionalized polymer film.

Abstract: There are provided a light emitting device and a backlight unit including the same. The light emitting device includes a package body having opposing first and second main surfaces and side surfaces, and formed of a curable resin; first and second external terminal blocks opposing each other and each having first and second surfaces formed on the first and second main surfaces and side surfaces, the first and second external terminal blocks each including a connecting part having a bonding portion located inside the package body and a terminal portion connected to the bonding portion and exposed outward; and an LED chip including an electrode forming surface where first and second electrodes are formed and a light emitting surface located opposite to the electrode forming surface, the LED chip having the first and second electrodes electrically connected to the bonding portions of the first and second external terminal blocks, respectively.

Abstract: A method of forming a nitride film by hydride vapor phase epitaxy, the method including: sequentially disposing at least one group III metal source including impurities and a substrate in an external reaction chamber and an internal reaction chamber sequentially located in the direction of gas supply and heating each of the external reaction chamber and the internal reaction chamber at a growth temperature; forming a metal chloride by supplying hydrogen chloride gas and carrier gas into the external reaction chamber to react with the group III metal source and transferring the metal chloride to the substrate; and forming the nitride film doped with the impurities on the substrate by reacting the transferred metal chloride with nitrogen source gas supplied to the internal reaction chamber.

Abstract: Climate control unit with an interior section containing a storage space and with a closable access opening to the storage section whereby at least one part of the interior section is separated and sealed against the rest of the interior section thus forming a separate germ-proof section. The division takes place at least in part by a membrane that is permeable for water vapor and gas but impermeable for microorganisms.

Abstract: The invention concerns a LED lighting body (1) comprising an inner tubular structure (2) made of a heat conducting and electrically insulating material, LEDs (6) associated with a first end (3) of the inner tubular structure (2), an electronic control circuit (8) of the LEDs (6) housed in the inner tubular structure (2), a base (9) associated with a second end (4) of the inner tubular structure (2) on the side opposite the first end (3) and electrically connected to the control circuit (8) and a sleeve (11) arranged externally and coaxial with the inner tubular structure (2), which defines at the level of the first end (3) of the inner structure (2) an annular housing (12) which accommodates a lower portion (131) of a bulb (13) covering the LEDs (6).

Abstract: There are provided a plane light source and an LCD backlight unit having the same.

Abstract: A light emitting module comprises a light emitting device (LED) mounted on a high thermal dissipation sub-mount, which performs the traditionally function of heat spread and the first part of the heat sinking. The sub-mount is a grown metal that is formed by an electroplating, electroforming, electrodeposition or electroless plating process, thereby minimising thermal resistance at this stage. An electrically insulating and thermally conducting layer is at least partially disposed across the interface between the grown semiconductor layers of the light emitting device and the formed metal layers of the sub-mount to further improve the electrical isolation of the light emitting device from the grown sub-mount. The top surface of the LED is protected from electroplating or electroforming by a wax or polymer or other removable material on a temporary substrate, mould or mandrel, which can be removed after plating, thereby releasing the LED module for subsequent processing.

Abstract: Provided is a laser display device. The laser display device may include at least one light source configured to emit at least one laser beam, at least one scanning unit configured to perform a scanning with the at least one laser beam, and an image forming unit configured to generate excitation light and scattering light by receiving the at least one laser beam from the scanning unit to form an image.

Abstract: Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.

Abstract: The present invention relates to a light emitting diode module capable of facilitating the connection between light emitting diode modules. The present invention provides a light emitting diode module including an insulating layer, a first circuit pattern layer and a second circuit pattern layer which are stacked on a top surface and a bottom surface of the insulating layer respectively and have one ends protruding to an outside of the insulating layer and the other ends positioned inside the insulating layer, a solder resist layer coated on the first circuit pattern layer, a first via formed vertically through a portion of the solder resist layer to be electrically connected to the first circuit pattern layer, a second via formed vertically through a portion of the solder resist layer and the insulating layer to be electrically connected to the second circuit pattern layer and a light emitting element mounted on the solder resist layer.

Abstract: A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

Abstract: The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.

Abstract: There is provided a backlight unit. The backlight unit is configured to include: a plurality of light sources; a plurality of light guide plates being arranged alternately with the light sources so that light emitted from the light sources is incident; and a chassis receiving the light sources and the light guide plates, wherein the plurality of light guide plates are disposed to be spaced apart from each other, being symmetrical to each other in order to face the central region of the chassis, a pair of light guide plates opposed to each other on the central region being connected to each other so that the light therefrom is mixed.

Abstract: A lamp comprising a solid state light emitter, the lamp being an A lamp and providing a wall plug efficiency of at least 90 lumens per watt. Also, a lamp comprising a solid state light emitter and a power supply, the emitter being mounted on a heat dissipation element, the dissipation element being spaced from the power supply. Also, a lamp, comprising a solid state light emitter and a heat dissipation element that has a heat dissipation chamber, whereby an ambient medium can enter the chamber, pass through the chamber, and exit. Also, a lamp, comprising a light emissive housing at least one solid state lighting emitter and a first heat dissipation element.