Abstract: A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 ?m; and an n-electrode pad formed on the n-type nitride semiconductor layer.

Abstract: A nitride semiconductor device includes n-type and p-type nitride semiconductor layers, an active layer, the active layer having a lamination of quantum barrier layers and quantum well layers, a thermal stress control layer disposed between the n-type nitride semiconductor layer and the active layer, and formed of a material having a smaller thermal expansion coefficient than the n-type and p-type nitride semiconductor layers, and a lattice stress control layer disposed between the thermal stress control layer and the active layer, and including a first layer and a second layer.

Abstract: An LED lamp cover structure containing luminescent material and its fabrication methods are described. The LED lamp cover is comprised of a first lens cap providing the outer surface of the lamp cover, a second lens cap providing the inner surface of the lamp cover, and an encapsulating layer sandwiched between the lens cap providing the outer surface of the lamp cover and the lens cap providing the inner surface of the lamp cover, which is mixed with luminescent material for wavelength conversion.

Abstract: There is provided a light emitting diode (LED) package in which a phosphor layer encapsulating an LED chip is formed uniformly to facilitate a process. The LED package includes: a package body having a mounting area; a holding part mounted on the mounting area to expose a portion of the mounting area; an LED chip mounted on the mounting area, the LED chip surrounded by the holding part to emit light; and a phosphor layer held by the holding part to seal a space defined by the holding part, the phosphor layer converting a wavelength of the light from the LED chip.

Abstract: A light emitting diode module includes: a printed circuit board including an upper circuit layer, a lower metal layer, an insulating layer, and a plurality of through holes; a metallic heat sink formed with a plurality of chip-support portions and disposed below the printed circuit board; a thermal connection layer that has lower and upper surfaces respectively bonded to the heat sink and the lower metal layer of the printed circuit board; and a plurality of light emitting diode chips, each of which is placed in contact with and bonded to one of the chip-support portions and each of which is electrically connected to the upper circuit layer. A method for making the light emitting diode module is also disclosed.

Abstract: There is provided a surface light source using white light emitting diodes including: a plurality of white light emitting diodes arranged at a predetermined distance from one another, wherein the white light emitting diodes are arranged such that a light emitting diode unit defined by each of the white light emitting diodes and corresponding ones of the white light emitting diodes disposed at a closest distance from the each white light emitting diode has a central light amount ranging from 80% to 120% with respect to an average light amount of the white light emitting diodes.

Abstract: Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.

Abstract: The present invention relates to a radiating member of an LED illumination device and the LED illumination device using the same. Provided is an LED illumination device includes a printed circuit board mounted with LED chips; and a radiating member provided on a rear surface of the printed circuit board, wherein the radiating member includes a radiating pipe vertically attached to a center of the printed circuit board, radiating pins surrounding and attached to the printed circuit board at a predetermined interval, radiating disks provided below the radiating fins and arranged along the radiating pipe at a predetermined interval, and a radiating member case for covering the radiating member.

Abstract: A planar light source and a backlight unit including the same are disclosed. The planar light source includes a light emission region formed by arrangements of light emitting devices. The light emission region includes first to nth separate parts each having a center of the light emission region as one vertex (n: natural number of 2 or higher). The first separate part includes light emitting devices arranged two-dimensionally in first and second directions. A pitch in the first direction is different from a pitch in the second direction in at least a portion of the two-dimensional arrangement structure. Light emitting devices of each of the second to nth separate parts have an arrangement structure obtained by a clockwise or counter-clockwise rotation of the arrangement structure of the light emitting devices of the first separate part by an angle of 1/n×360° about the center of the light emission region.

Abstract: A white light emitting device including: a blue light emitting diode chip having a dominant wavelength of 443 to 455 nm; a red phosphor disposed around the blue light emitting diode chip, the red phosphor excited by the blue light emitting diode chip to emit red light; and a green phosphor disposed around the blue light emitting diode chip, the green phosphor excited by the blue light emitting diode chip to emit green light, wherein the red light emitted from the red phosphor has a color coordinate falling within a space defined by four coordinate points (0.5448, 0.4544), (0.7079, 0.2920), (0.6427, 0.2905) and (0.4794, 0.4633) based on the CIE 1931 chromaticity diagram, and the green light emitted from the green phosphor has a color coordinate falling within a space defined by four coordinate points (0.1270, 0.8037), (0.4117, 0.5861), (0.4197, 0.5316) and (0.2555, 0.5030) based on the CIE 1931 color chromaticity diagram.

Abstract: There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

Abstract: A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.

Abstract: A sub-mount, a light emitting diode package, and a method of manufacturing thereof are disclosed. A sub-mount, on which multiple light emitting diodes are mounted, can include a multiple number of metal bodies on which the light emitting diodes are respectively mounted, and an oxide wall interposed between the metal bodies such that the adjacent metal bodies are supported by each other but electrically disconnected from each other. By utilizing certain embodiments of the invention, a high heat releasing effect may be obtained, and manufacturing costs may be reduced.

Abstract: A white light emitting device including: a blue light emitting diode chip having a dominant wavelength of 443 to 455 nm; a red phosphor disposed around the blue light emitting diode chip, the red phosphor excited by the blue light emitting diode chip to emit red light; and a green phosphor disposed around the blue light emitting diode chip, the green phosphor excited by the blue light emitting diode chip to emit green light, wherein the red light emitted from the red phosphor has a color coordinate falling within a space defined by four coordinate points (0.5448, 0.4544), (0.7079, 0.2920), (0.6427, 0.2905) and (0.4794, 0.4633) based on the CIE 1931 chromaticity diagram, and the green light emitted from the green phosphor has a color coordinate falling within a space defined by four coordinate points (0.1270, 0.8037), (0.4117, 0.5861), (0.4197, 0.5316) and (0.2555, 0.5030) based on the CIE 1931 color chromaticity diagram.

Abstract: A LED Chip-on-Board (COB) module comprises a plurality of LED die arranged on a substrate in one or more radially concentric rings about a centre point such that each LED die is azimuthally offset from neighbouring LED die. The module includes thermal conduction pads each having lateral dimensions at least as large as the combined lateral dimensions of the LED die attached to it and a total surface area at least five times larger than the total surface area of all the LED die attached to it. At the same time, the total light emission area of the module is no greater than four times larger than the combined total surface emission area of all the individual LED die disposed on the substrate. A variety of configurations are possible subject to these criteria, which permit good packing density for enhanced brightness whilst ensuring optimal heat transfer. A method of manufacturing the module is also provided.

Abstract: A tunable colour LED module comprises at least two sub-modules, each comprising an LED (104), a wavelength converting element (WCE) (201, 112, 203) and a reflector cup. The total light emitted by the module comprises light generated from each LED and WCE and the module is configured to emit a total light having a predefined colour chromaticity when activation properties of the LEDs are managed appropriately. The total light may have a broad white emission spectrum (106). The module combines the benefits of a low cost with uniform chromaticity properties in the far field, and offers long and controlled lifetime at the same time as flexibility and intelligence of tunable colour chromaticity, Colour Rendering Index (CRI) and intensity, either at manufacture or in an end user lighting application. A controlled LED module system comprises a control system for the managing activation properties of the LEDs in the sub-modules. Also described is a method of manufacture.

Abstract: Disclosed herein is a high-quality group III-nitride semiconductor thin film and group III-nitride semiconductor light emitting device using the same. To obtain the group III-nitride semiconductor thin film, an AlInN buffer layer is formed on a (1-102)-plane (so called r-plane) sapphire substrate by use of a MOCVD apparatus under atmospheric pressure while controlling a temperature of the substrate within a range from 850 to 950 degrees Celsius, and then, GaN-based compound, such as GaN, AlGaN or the like, is epitaxially grown on the buffer layer at a high temperature. The group III-nitride semiconductor light emitting device is fabricated by using the group III-nitride semiconductor thin film as a base layer.

Abstract: A light guiding device (1) and in particular to a light guiding device that can be used for illumination, backlighting, signage or display purposes is described. The light guiding device (1) comprises a transparent base substrate (2), upon a first surface of which are mounted light sources (3), and a guide substrate (4) arranged so as to encapsulate the light sources (3) upon the first surface. In this way the guide substrate (4) provides a means for guiding light produced by the one or more light sources over the first surface. The incorporation of scattering structures (5) along with appropriate choice of the refractive indices of the various layers provides a highly flexible light guiding device that is typically less than 1 mm thick. The described light guiding device (1) provides particular application as a seven segment display.

Abstract: A backlight unit of the invention is reduced in thickness, weight and manufacturing costs but improved in heat releasing efficiency. In the backlight unit, a flexible printed circuit board has at least one through hole perforated therein. An LED package is disposed on a top portion of the flexible printed circuit board corresponding to the through hole. The backlight unit of the invention employs the flexible printed circuit board in place of a metal printed circuit board as a means to conduct current to the LED package. This produces a slimmer and lighter backlight unit and also saves manufacturing costs. In addition, the LED package is directly bonded onto a bottom plate by a heat conducting adhesive, thereby ensuring heat generated from the LED package to be released more quickly.

Abstract: There is provided a surface light source using white light emitting diodes including: a plurality of white light emitting diodes arranged at a predetermined distance from one another, wherein the white light emitting diodes are arranged such that a light emitting diode unit defined by each of the white light emitting diodes and corresponding ones of the white light emitting diodes disposed at a closest distance from the each white light emitting diode has a central light amount ranging from 80% to 120% with respect to an average light amount of the white light emitting diodes.