Abstract: An exemplary embodiment of the present disclosure provides a solid-state light emitting device. The solid-state light emitting device includes a stair-type bowl, a plurality of light emitting chips, and an encapsulation glue. The stair-type bowl includes a base and a ring stair structure. The ring stair structure includes a plurality of ring tread surfaces and a plurality of ring riser surfaces connected to the ring tread surfaces. The ring stair structure is connected to the base. The base has a bottom surface. The ring stair structure surrounds the bottom surface and protrudes from the bottom surface. The light emitting chips are respectively disposed above the ring tread surfaces and the bottom surfaces. The stair-type bowl is filled with the encapsulation glue. The encapsulation glue covers the light-emitting chips.

Abstract: An LED lighting apparatus and a dimming method thereof are disclosed. The LED lighting apparatus is coupled to a power source through a power switch. The method includes providing a first lighting unit and a second lighting unit; detecting whether or not the power switch has been turned on; and gradually adjusting a light mixing ratio between the first lighting unit and the second lighting unit according to a turn-on duration of the power switch and storing a color temperature value, accordingly.

Abstract: An exemplary embodiment illustrates a zener diode structure, wherein the zener diode structure includes a first-type semiconductor layer, a second-type semiconductor layer, a first electrode, a second electrode, and an insulation layer. The second-type semiconductor layer is disposed in a designated area in the first-type semiconductor layer. The first electrode is disposed on the bottom side of the first-type semiconductor layer. The second electrode is disposed above the first-type and the second-type semiconductor layers in corresponding to the central area of the second-type semiconductor layer. The insulation layer is disposed above the first-type and the second-type semiconductor layers surrounding the second electrode. The disclosed zener structure having the insulation layer can reduce the short circuit issue resulting from overflow of an adhesive material during the zener diode packaging process.

Abstract: A luminous circuit and a luminous device having the same are provided. The luminous circuit may include a first conducting wire and a second conducting wire connected to a positive terminal and a negative terminal of a power supply, respectively. The luminous circuit may further include N light-emitting circuits electrically and sequentially coupled between the first conducting wire and the second conducting wire in a parallel connection fashion beginning from a location in proximity of the power supply. Each of the light-emitting circuits corresponds to a light-emitting element, and jth light-emitting element is better than ith light-emitting element in lighting efficiency, wherein 1?i<j?N, i, j, and N are integers, and N?2.

Abstract: A solid-state light-emitting package includes a leadframe, a light-emitting chip, and a sealant. The leadframe includes a first electrode and a second electrode. The first electrode has at least one first contact end, and the second electrode has at least one second contact end. The light-emitting chip is electrically connected to the first electrode and the second electrode and is disposed between the first contact end and the second contact end. The sealant covers the leadframe and the light-emitting chip and has a first surface and a second surface. The first surface is the light output surface for the light-emitting chip. The first electrode and the second electrode are bent toward the first surface, where the first contact end and the second contact end are exposed by the first surface.

Abstract: A plant illumination apparatus includes a light source module including a first light source and a second light source generating lights having different wavelengths, an environment-detecting module detecting an external environment to obtain a real-time environment parameter, and a control module connected to the light source module and the environment-detecting module. The control module includes a processor unit and a storage unit storing a database of plant growing environment parameters. The processor unit loads at least one preset growing environment parameter corresponding to a plant growth timing from the database of plant growing environment parameters, and compares the preset growing environment parameter with the real-time environment parameter to output at least one comparison result. The processor unit adjusts the first light source and the second light source according to the comparison result, so that an adjusted environment parameter matches the preset growing environment parameter.

Abstract: An LED package including a lead-frame, at least an LED chip and an encapsulant is provided. The lead-frame has a roughened surface, the LED chip is disposed on the lead-frame and electrically connected to the lead-frame, and the roughened surface is suitable to scatter the light emitted from the LED chip. In addition, the encapsulant encapsulates the LED chip and a part of the lead-frame, and the rest part of the lead-frame is exposed out of the encapsulant.

Abstract: An over voltage protection circuit, adapted for placing between a power pin of a chip and a power terminal is provided. The over voltage protection circuit includes a voltage detection unit, a current limiting component, and a switch component. The voltage detection unit is coupled between the power terminal and a ground, for outputting a setting voltage according to the voltage level at the power terminal. The current limiting component is coupled between the power terminal and the power pin of the chip. The switch component is coupled between the power pin of the chip and the ground, wherein the switch component is further coupled to the voltage detection unit and controlled by the setting voltage. When the voltage level at the power terminal is higher than a first predetermined value, the switch component conducts to cut off voltage received by the chip.

Abstract: A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.

Abstract: An inspection machine capable of inspecting optical property and electrical property of a light emitting device is provided. The inspection machine includes a substrate table, a probe mechanism, a heating apparatus, a cooling apparatus, an image-sensing apparatus, a temperature-sensing apparatus and a moving mechanism. The probe mechanism is capable of moving toward the light emitting device to contact therewith. The heating apparatus is capable of heating the light emitting device within a first temperature range. The cooling apparatus is capable of cooling the light emitting device within a second temperature range. The image-sensing apparatus senses a light emitting image provided from the light emitting device. The temperature-sensing apparatus senses the present temperature of the light emitting device. The image-sensing apparatus is disposed on the moving mechanism. The moving mechanism is capable of moving the image-sensing apparatus.

Abstract: The present invention provides a manufacturing method of an LED chip. First, a device layer is formed on a growth substrate, wherein the device layer has a first surface connected to the growth substrate and a second surface. Next, a plurality of first trenches are formed on the second surface of the device layer. Then, a protection layer is formed on the side walls of the first trenches. After that, the second surface is bonded with a supporting substrate and the device layer is then separated from the growth substrate. Further, a plurality of second trenches corresponding to the first trenches are formed in the device layer to form a plurality of LEDs, wherein the second trenches extend from the first surface to the bottom portions of the first trenches. Furthermore, a plurality of electrodes are formed on the first surface of the device layer.

Abstract: A LED chip including a substrate, a semiconductor device layer, a current blocking layer, a current spread layer, a first electrode and a second electrode is provided. The semiconductor device layer is disposed on the substrate. The current blocking layer is disposed on a part of the semiconductor device layer and includes a current blocking segment and a current distribution adjusting segment. The current spread layer is disposed on a part of the semiconductor device layer and covers the current blocking layer. The first electrode is disposed on the current spread layer, wherein a part of the current blocking segment is overlapped with the first electrode. Contours of the current blocking segment and the first electrode are similar figures. Contour of the first electrode and is within contour of the current blocking segment. The current distribution adjusting segment is not overlapped with the first electrode.

Abstract: A light emitting diode structure and a manufacturing method thereof are disclosed. The structure includes a substrate, an N type semiconductor layer, and active layer, a P type semiconductor layer, a current diffusion layer, and a metal electrode. The metal ions of the P type semiconductor layer may bond with hydrogen after process thermal annealing, and metal hydride may be generated. The metal hydride may be directly formed on the surface of the P type semiconductor layer and may be used as the current blocking layer. Since the metal hydride may be directly formed on the surface of the P type semiconductor layer, its structure is flat, which resolve the problem having the electrodes peeled off from the solder wire.

Abstract: A dicing process is provided for cutting a wafer along a plurality of predetermined scribe lines into a plurality of dies that are releasably adhered to a release film. The dicing process includes: (a) disposing a wafer-breaking carrier on a supporting device, the wafer-breaking carrier having a chipping unit; (b) disposing the wafer above the supporting device such that the chipping unit is at a position corresponding to the scribe lines; and (c) adhering a release surface of the release film to the wafer by applying a force to the release film to contact the chipping unit of the wafer-breaking carrier with the wafer, such that the wafer is split along the scribe lines into the dies.

Abstract: The present invention discloses a LED structure and a method for manufacturing the LED structure. The LED structure includes a substrate, a reflection layer, a first conducting layer, a light emitting layer, and a second conducting layer. The substrate has a plurality of grooves, and the reflection layer is disposed inside the plurality of grooves. The reflection layer is formed as a reflection block inside each of the grooves. The first conducting layer is disposed on the substrate, that is, the reflection layer is disposed between the first conducting layer and the substrate. The light emitting layer and the second conducting layer are sequentially disposed on the first conducting layer. The light emitting layer generates light when a current pass through the light emitting layer. Accordingly, the light generated by the light emitting layer can be emitted to the same side of the LED structure.