Abstract: Various embodiments include apparatuses and methods enabling a control apparatus for color tuning a light-emitting diode (LED) array. In one example, a controllable-lighting apparatus includes an LED array having at least one desaturated red LED, at least one desaturated green LED, and at least one desaturated blue LED. A number of color-tuning and luminous-flux control devices includes an adjustable correlated color temperature (CCT)-control device for setting a desired color temperature of the LED array, an adjustable Duv-control device for setting a desired overall color cast of the LED array along an isothermal CCT line corresponding to the desired color temperature, and an adjustable flux-control device for setting a desired luminous-flux value of the LED array. Other apparatuses and methods are described.

Abstract: A backlight apparatus can include a lens to receive light and generate light with a collimated batwing configuration. The lens can include a receiving surface and an opposing transmission surface. The lens can be symmetric about a plane of symmetry. The transmission surface can include an angle of curvature that increases closer to the plane of symmetry.

Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.

Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.

Abstract: The embodiments of the invention provide a multi-focal collimating lens and a headlight assembly for an automotive low beam. The multi-focal collimating lens includes a central collimating lens portion and two total internal reflection lens portions arranged on a left side and a right side of the central collimating lens portion. The central collimating lens portion and the total internal reflection lens portions share two focal points symmetrically located on both sides of a vertical symmetry plane of the multi-focal collimating lens. An upper edge and a lower edge of the multi-focal collimating lens are formed based on the two focal points, so that the headlight assembly is able to generate a cut-off line of the automotive low beam in a far-field light pattern of the multi-focal collimating lens.

Abstract: Described herein are methods for growing light emitting devices under ultra-violet (UV) illumination. A method includes growing a III-nitride n-type layer over a III-nitride p-type layer under UV illumination. Another method includes growing a light emitting device structure on a growth substrate and growing a tunnel junction on the light emitting device structure, where certain layers are grown under UV illumination. Another method includes forming a III-nitride tunnel junction n-type layer over the III-nitride p-type layer to form a tunnel junction light emitting diode. A surface of the III-nitride tunnel junction n-type layer is done under illumination during an initial period and a remainder of the formation is completed absent illumination. The UV light has photon energy higher than the III-nitride p-type layer's band gap energy. The UV illumination inhibits formation of Mg—H complexes within the III-nitride p-type layer resulting from hydrogen present in a deposition chamber.

Abstract: A lighting apparatus and method of controlling a lighting apparatus are described. A power supply capable of supplying an amount of power is connected to an array of light emitting elements capable of illuminating an area in response to the supplied amount of power. At least some light emitting elements can have independently controllable illumination intensity, with the array of light emitting elements being switchable between a first mode in which each member of the array of light emitting elements received the supplied amount of power and provides a broadly collimated beam, and second mode where a subset of the array of light emitting elements receive the supplied amount of power and provides a narrower collimated beam.

Abstract: A light emitting device comprises an LED emitting ultraviolet or blue light and one or more phosphors excited by the ultraviolet or blue light and in response emitting longer wavelength light to provide a combined phosphor emission spectrum having an emission peak at wavelength ?pk with a full width at half maximum of FWHM. With ?pk and FWHM expressed in nm, 525 nm??pk?0.039*FWHM+492.7 nm. The light emitting device may be used, for example, to signal the autonomous driving state of an automobile.

Abstract: A phosphor carrier assembly includes a substrate, a thermal or UV activated release adhesive, a layer containing a pixelated phosphor array, and a partially cured or highly viscous adhesive. The phosphor pixels on the carrier are typically all of the same color. In formation of a phosphor converted LED array the phosphor pixels on the carrier assembly are aligned with and placed in contact with corresponding LED pixels in an array of pixelated LED dice. Selected phosphor pixels on the carrier assembly may then be attached to corresponding LED pixels, and released from the substrate, by powering (activating) the corresponding LED pixels to heat the selected phosphor pixel to a temperature that releases the thermal release adhesive and that cures or partially cures the adhesive on the selected phosphor pixels in contact with the corresponding LED pixels.

Abstract: Systems, methods and devices are descried. A method of controlling a segmented flash having a plurality of flash segments each arranged to illuminate a portion of the scene includes determining an amount of light for illuminating each portion of the scene, measuring forward voltages of each of the flash segments, and adjusting a brightness of each of the flash segments to the determined amount of light for illuminating each portion of the scene. The adjusting is performed by at least one of adjusting a magnitude of a drive current to each of the flash segments, adjusting a duty cycle of the drive current to each of the flash segments, or scheduling a dummy flash, based at least in part on the measured forward voltages.

Abstract: Circuit boards, LED lighting systems and methods of manufacture are described. A circuit board includes a ceramic carrier and a body on the ceramic carrier. The body includes dielectric layers and slots formed completely through a thickness of the dielectric layers. The slots are filled with a dielectric material. A conductive pad is provided on a surface of each of the slots opposite the ceramic carrier.

Abstract: A light emitting device includes an LED having a light emitting top surface and sidewalls. A phosphor structure is attached to the light emitting surface of the LED. The phosphor structure has a light emitting top surface facing away from the LED light emitting surface, and sidewalls. A light reflective material is arranged to cover the sidewalls of the LED and the phosphor structure. A light absorptive region is defined in the light reflective material around a perimeter of the light emitting surface of the phosphor structure. The light absorptive region may be spaced apart from the perimeter of the phosphor structure by a gap. The light absorptive region may be formed by ultraviolet laser illumination of the light reflecting material.

Abstract: A device including a phosphor layer having a plurality of air gaps arranged within the phosphor layer to block lateral light transmission. The phosphor layer can be sized and positioned to be continuously extend over a plurality of LED emitter pixels.

Abstract: A lighting device and a method of manufacturing a lighting device are described. A lighting device includes a flat carrier that has a front surface and a rear surface opposite the front surface. The flat carrier includes a cutout and multiple carrier-side electrical contacts on the rear surface. A mounting element is provided on the rear surface of the flat carrier and includes multiple mount-side electrical contacts electrically coupled to the multiple carrier-side electrical contacts and an elevated portion projecting into the cutout. Multiple LED elements are provided on the elevated portion of the mounting element and electrically coupled to the mounting element on the same side as the multiple mount-side side electrical contacts. A heat sink element is thermally coupled to the mounting element on a side of said mounting element opposite the flat carrier.

Abstract: A light-emitting diode (LED) package assembly includes a substrate. The substrate includes a top surface, a bottom surface and an opening formed through the substrate. The opening includes a first portion adjacent the top surface and a second portion adjacent the bottom surface that is wider than the first portion such that portions of the substrate overhang the second portion of the opening. Pads are provided on a bottom surface of the portions of the substrate that overhang the second portion of the opening. The assembly also includes a hybridized device in the opening. The hybridized device includes a silicon backplane that has a top surface, a bottom surface and interconnects on the top surface. The interconnects are electrically coupled to the pads. The hybridized device also includes an LED array on the top surface of the silicon backplane.

Abstract: A vehicle headlamp system includes a vehicle supported power and control system including a data bus. A sensor module can be connected to the data bus to provide information related to environmental conditions or information relating to presence and position of other vehicles and pedestrians. A separate headlamp controller can be connected to the vehicle supported power and control system and the sensor module through the bus. The headlamp controller can include an image frame buffer that can refresh held images at greater than 30 Hz speed. An active LED pixel array can be connected to the headlamp controller to project light according to a pattern and intensity defined by the image held in the image frame buffer and a standby image buffer can be connected to the image frame buffer to hold a default image.

Abstract: A lighting device includes LED lighting elements arranged at a distance from each other. A leadframe comprising conductor segments interconnecting the LED lighting elements. The LED lighting elements each comprise an LED die element attached to one of the conductor segments of the leadframe. The LED lighting elements further each comprise a holding element disposed to hold at least two of the conductor segments of the leadframe which are partially embedded within one of the holding elements. In order to obtain good optical properties, the holding elements do not cover the LED die elements. According to the proposed manufacturing method, conductor segments of the leadframe are provided and holding elements are formed at a distance from each other, each partially embedding at least two conductor segments. Mounting portions on the conductor segments are not covered by the holding elements. LED die elements are attached to the mounting portions.

Abstract: The invention describes a driver (1) of an array (2) of current-driven LEDs (20), comprising a voltage converter (10) arranged to generate a supply voltage (Vboost) to the LED array (2) and to adjust the supply voltage (Vboost) in response to a feedback signal (100); a number of current sources (CS1, . . . , CSn) arranged to drive the LEDs (20) of the LED array (2); and a monitoring arrangement (M) adapted to monitor a current source voltage (Vcs1, . . . , Vcsn) relative to a voltage headroom (H) and to generate the feedback signal (100) on the basis of the headroom monitoring results. The invention further describes a device (4) comprising an LED array (2) and an embodiment of the inventive driver (1). The invention further describes method of driving an LED array (2).

Abstract: An illumination device comprises at least a laser (1) emitting a laser beam (6) of light of a first wavelength, a wavelength converting member (5) converting at least part of the light of the first wavelength into light of a second wavelength, a scanning unit (4) adapted to scan the laser beam (6) across the wavelength converting member (5) and an imaging optics (2) imaging a light emitting face of the laser (1) via the scanning unit (4) onto the wavelength converting member (5). In the proposed device, the laser beam (6) is guided via reflection at a reflective member (3) to the wavelength converting member (5).

Abstract: An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, a second n-type layer on the tunnel junction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. A first trench separates the first mesa and the adjacent mesa, cathode metallization in the first trench and in electrical contact with the first and the second color active regions of the adjacent mesa, and anode metallization contacts on the n-type layer of the first mesa and on the anode layer of the adjacent mesa. The devices and methods for their manufacture include a thin film transistor (TFT).