Abstract: A nonvolatile semiconductor memory device according to one embodiment of the present invention includes: a memory cell array and a control circuit. The control circuit executes a first reading operation and a second reading operation. The first reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between a control gate electrode and source of the selected memory cell to a first value. The second reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between the control gate electrode and source of the selected memory cell to a second value lower than the first value. When executing the second reading operation, the control circuit keeps a voltage of the control gate electrode of the selected memory cell to 0 or a positive value.

Abstract: A solid state drive (SSD) includes a first storage region classified as byte addressable NV storage region and a controller communicatively coupled to the first storage region by a bus. The controller detects a reduced storage capacity of the first storage region, and in response to the detection, reclassifies the first storage region as a block addressable NV storage region. The SSD dynamically changes byte addressable NV storage regions to block addressable NV storage regions as the byte addressable NV storage regions are degraded, thereby extending the longevity of the SSD.

Abstract: According to one embodiment, a memory system includes a nonvolatile memory, an encoding part configured to generate a plurality of component codes including a first component code and a second component code different from the first component code, by using, as an information symbol, at least one symbol of a plurality of symbols included in user data to be written into the nonvolatile memory, and a memory interface configured to write the plurality of component codes into the nonvolatile memory. The encoding part includes a plurality of encoders each configured to generate a parity corresponding to each of the plurality of component codes, and a first distributor configured to divide a first symbol string of the user data into a plurality of chunks, each of which has a first symbol length smaller than that of the first symbol string, and to input each of the plurality of chunks generated by the division, into any one of at least different two of the plurality of encoders.

Abstract: According to one embodiment, a semiconductor storage device includes a board, a semiconductor memory component, and a capacitor. The hoard includes a first pad and a second pad. The first capacitor includes a first electrode and a second electrode. The first pad includes a first region and a second region. A direction from the first pad to the second pad is a first direction and a direction different from the first direction is a second direction. A difference between a dimension of the second region in the second direction and a dimension of the first electrode in the second direction is smaller than a difference between a dimension of the first region in the second direction and a dimension of the first electrode in the second direction.

Abstract: A memory system includes a nonvolatile memory having memory blocks; and a controller configured to receive a request for writing user data from a host; select at least a first block having a first percentage of valid data among the memory blocks, determine a second percentage different from the first percentage on the basis of at least the first percentage of the valid data in the first block, determine a first ratio between a write amount of the user data in accordance with the request from the host and a write amount of the valid data in at least the first block on the basis of the second percentage determined, and write the user data and the valid data in the first block into the nonvolatile memory on the basis of the first ratio.

Abstract: According to one embodiment, a memory system stores write data received from a host to a shared write buffer for write destination blocks, acquires first write data for plural pages from the shared write buffer, and writes the first write data to a first write destination block by a first-step write operation. When receiving write data from the host in a state in which an empty region does not exist in the shared write buffer, the memory system discards write data in the shared write buffer in which the first-step write operation has been finished. In a case where the first write data do not exist in the shared write buffer when a second-step write operation of the first write data is to be executed, the memory system transmits a request to acquire the first write data to the host.

Abstract: According to one embodiment, a semiconductor device includes a stacked body, a columnar portion, a first charge storage portion, and a second charge storage portion. The stacked body includes a plurality of electrode layers stacked in a first direction. The plurality of electrode layers includes a first electrode layer, and a second electrode layer. The columnar portion extends in the first direction in the stacked body. The first charge storage portion provides between the first electrode layer and the columnar portion. The second charge storage portion provides between the second electrode layer and the columnar portion. A first thickness in a second direction intersecting the first direction of the first charge storage portion between the first electrode layer and the columnar portion is thicker than a second thickness in the second direction of the second charge storage portion between the second electrode layer and the columnar portion.

Abstract: A memory device according to an embodiment includes a first conductive layer; a second conductive layer; a ferroelectric layer provided between the first conductive layer and the second conductive layer and containing hafnium oxide; a paraelectric layer provided between the first conductive layer and the ferroelectric layer and containing a first oxide; and an oxide layer provided between the paraelectric layer and the ferroelectric layer and containing a second oxide having an oxygen area density lower than an oxygen area density of the first oxide.

Abstract: According to one embodiment, a semiconductor memory device includes: a memory cell configured to hold 5-bit data; a word line coupled to the memory cell; and a row decoder configured to apply first to 31st voltages to the word line. A first bit of the 5-bit data is established by reading operations using first to sixth voltages. A second bit of the 5-bit data is established by reading operations using seventh to twelfth voltages. A third bit of the 5-bit data is established by reading operations using thirteenth to eighteenth voltages. A fourth bit of the 5-bit data is established by reading operations using nineteenth to 25th voltages. A fifth bit of the 5-bit data is established by reading operations using 26th to 31st voltages.

Abstract: According to an embodiment, an electronic apparatus includes a printed circuit board including a plurality of devices that include a nonvolatile memory package and a controller package configured to control the nonvolatile memory package, and a housing accommodating the printed circuit board. The housing includes an opening on a surface constituting the housing. An encryption device among the plurality of devices is present in a first region. The first region is a region on the printed circuit board that is not irradiated with light emitted from a light source placed at the opening. The encryption device is a device used for an encryption process of data to be stored into the nonvolatile memory package.

Abstract: A method for scheduling tasks on a processor includes detecting, in a task selection device communicatively coupled to the processor, a condition of each of a plurality of components of a computer system comprising the processor, determining a plurality of tasks that can be next executed on the processor based on the condition of each of the plurality of components, transmitting a signal to an arbiter of the task selection device that the plurality of tasks can be executed, determining, at the arbiter, a next task to be executed on the processor, storing, by the task selection device, the entry point address of the next task to be executed on the processor, and transferring, by the processor, execution to the stored entry point address of the next task to be executed.

Abstract: In one embodiment, a semiconductor device includes a first wafer or a first chip including a first insulator and a first pad. The device further includes a second wafer or a second chip including a second insulator in contact with the first insulator, and a second pad opposed to the first pad and electrically connected to the first pad. Moreover, the first insulator includes a first trench extending to the first pad, and/or the second insulator includes a second trench extending to the second pad.

Abstract: A semiconductor memory device includes a stacked body, a semiconductor member, and a first insulating member. Electrode films and insulating films are alternately stacked along a first direction in the stacked body. An end part of the stacked body is shaped like a staircase in which a terrace is formed for each of the electrode films. A portion of the electrode film placed in the end part is thicker than a portion of the electrode film placed in a central part of the stacked body. The semiconductor member extends in the first direction and penetrates through the central part of the stacked body. The first insulating member extends in the first direction and is provided in the end part.

Abstract: According to one embodiment, a semiconductor memory device includes the following configuration. A second word line is provided above a first word line on a substrate. A third word line is provided above the second word line. A semiconductor layer includes a first part that passes through the first word line, a second part that passes through the second and the third word lines, and is provided above the first part, and a joint provided between the first and second parts. When a write operation is performed on a memory cell of the third word line, prior to applying a write voltage to the third word line, a first voltage is applied to a bit line, a second voltage is applied to the third word line, and a third voltage higher than the second voltage is applied to the second word line.

Abstract: According to an embodiment, a memory system including: a semiconductor memory configured to store data, a memory controller configured to issue a first command to suspend a first operation to the semiconductor memory which is executing the first operation, wherein the memory controller is configured to prohibit the issuance of the first command until a time in which the first operation is executed passes a first threshold, acquire a status of the semiconductor memory which is executing the first operation, and update the first threshold to a second threshold in accordance with the status.

Abstract: A memory system includes a memory device including first storage elements which store data, a temperature sensor which measures a temperature of the memory device, and a controller including a processor which acquires a current temperature from the temperature sensor as a first temperature, acquires a temperature when the data is written into the first storage element, from the memory device as a second temperature, determines whether a difference between the first temperature and the second temperature exceeds a predetermined temperature difference, and when the difference exceeds the predetermined temperature difference, instructs the memory device to rewrite the data written in the first storage element. The memory device includes a sequencer which determines a voltage for the rewrite, based on the difference and a voltage when the data is written into the first storage element.

Abstract: A data storage device comprises a non-volatile semiconductor memory device and a solid-state drive controller communicatively coupled to the non-volatile semiconductor memory device. The non-volatile semiconductor memory device can store data in memory blocks. The solid-state drive controller can, periodically, retrieve counts from a counter table, select a predetermined number of memory blocks corresponding to the lowest counts, and determine an integrity of the stored data in each of the predetermined number of memory blocks. Each count can correspond to a difference between a count limit and a number of read operations performed on one of the memory blocks.

Abstract: A semiconductor memory device includes a semiconductor substrate, a first insulating film provided above the semiconductor substrate, a first conductive film provided above the first insulating film, a plurality of first electrode films provided above the first conductive film and stacked to be separated from each other, a semiconductor member extending in a stacking direction of the plurality of first electrode films, and a charge storage member provided between the semiconductor member and one of the plurality of first electrode films. The first conductive film includes a main portion disposed at least below the plurality of first electrode films, and a fine line portion extending from the main portion toward an end surface side of the semiconductor substrate. A width of the fine line portion is narrower than a width of the main portion.

Abstract: A semiconductor memory device according to an embodiment comprises: a semiconductor substrate; a stacked body having a plurality of first insulating layers and conductive layers stacked alternately on the semiconductor substrate; a columnar semiconductor layer contacting the semiconductor substrate in the stacked body being provided extending in a stacking direction of the stacked body and including a first portion and a second portion which is provided above the first portion; a memory layer provided on a side surface of the columnar semiconductor layer facing the stacked conductive layers and extending along the columnar semiconductor layer; and a second insulating layer provided between one of the first insulating layer and the conductive layers of the stacked body.

Abstract: According to one embodiment, a semiconductor memory device includes a stacked body which is provided on a substrate and in which an insulating film and an electrode film are alternately stacked. The semiconductor memory device also includes an insulating member which penetrates the stacked body in a stacking direction of the insulating film and the electrode film to thereby separate the stacked body. The semiconductor memory device also includes a semiconductor pillar which penetrates the stacked body in the stacking direction. A maximum portion of the insulating member where a first distance from a side surface of the insulating member to a central plane of the insulating member becomes maximum and a maximum portion of the semiconductor pillar where a second distance from a side surface of the semiconductor pillar to a center line of the semiconductor pillar becomes maximum being provided in different positions in the stacking direction.