Abstract: A bridge circuit with improved fail-safety, having a first electrical load with a first contact terminal and a second contact terminal, and a first series circuit connected to a first node and to a second node. A second series circuit is connected to a third node and to a fourth node. A third series circuit is connected to the second node and to a fifth node. A fourth series circuit is connected to the fourth node and to a sixth node. The first node and the third node are connected to a supply voltage, and the fifth node and the sixth node are connected to a reference voltage, and the first contact terminal is connected to the second node and the second contact terminal is connected to the fourth node.

Abstract: The present invention pertains to a fuel cell with a storage unit (4) for storing hydrogen (Hx), with a proton conductive layer, which covers a surface of the storage unit (4), and with a cathode (7) on a side of the proton conductive layer, which side is located opposite, wherein the storage unit (4) is directly coupled with an anode and/or the storage unit (4) is incorporated in a substrate (1) of a semiconductor. The storage unit (4) is preferably connected to the substrate (1) at least via a stress compensation layer (3).

Abstract: The invention relates to a lead frame magazine cover for closing of an opening of a lead frame magazine by insertion of a magazine cover into the lead frame magazine in a closing direction. The lead frame magazine cover includes a recess. The recess is constructed in the region of a front edge of the magazine cover in the closing direction of the magazine cover.

Abstract: In a method for generating pulse edges, assigned synchronously to the movement of a mechanical part, a magnetic field is generated. At least two measuring signals phase-shifted to one another for the magnetic field are detected. The magnetic field is changed as a function of the movement of the mechanical part in such a way that the measuring signals are modulated. A first measuring signal is compared with at least one first reference value. A second measuring signal is compared with at least one second reference value and/or the value of the first measuring signal is compared with the value of the second measuring signal. When at least one of these comparisons produces an agreement or the result of the relevant comparison changes its sign, a pulse edge is generated.

Abstract: A fastening device is provided that includes a semiconductor body with an integrated circuit, and a dielectric passivation layer formed on the surface of the semiconductor body, and a trace formed underneath the passivation layer, and an oxide layer formed beneath the trace, and a connecting component that forms a frictional connection between a component formed above the passivation layer and the semiconductor body, wherein a formation passing through the passivation layer and the oxide layer and having a bottom surface is formed, and a conductive layer is formed on the bottom surface and the connecting component forms an electrical connection between the conductive layer and the component.

Abstract: A magnetic pressure sensor is provided that includes a semiconductor body with a top side and a back side, a Hall sensor formed on the top side of the semiconductor body, a spacer connected to the semiconductor body, whereby the spacer has a recess in the center, and a membrane covering the recess, whereby the membrane has a first material and has a ferromagnetic substance. The ferromagnetic substance concentrates a magnetic flux density of a source formed outside the ferromagnetic material, and the spacer is formed as a circumferential wall and has a second material and the second material is different from the first material in at least one element.

Abstract: A semiconductor housing is provided that includes a metal support and a semiconductor body, a bottom side thereof being connected to the metal support. The semiconductor body has metal surfaces that are connected to pins by bond wires and a plastic compound, which completely surrounds the bond wires and partially surrounds the semiconductor body. The plastic compound has an opening on the top side of the semiconductor body, and a barrier is formed on the top side of the semiconductor body. The barrier has a top area and a base area spaced from the edges of the semiconductor body and an internal clearance of the barrier determines a size of the opening. Whereby, a portion of the plastic compound has a height greater than the barrier, and a fixing layer is formed between the base area of the barrier and the top side of the semiconductor body.

Abstract: A method for determining an angle of rotation between a sensor array and a magnetic field of a magnet, whereby the magnetic field is formed substantially parallel and perpendicular to the rotation axis, and the magnet is arranged rotationally symmetric relative to the rotation axis. A first measurement signal and a second measurement signal are generated by the two subsensors of the first magnetic field sensor unit, and the first measurement signal is assigned a first relation and the second measurement signal is assigned a second relation. A third measurement signal and a fourth measurement signal are generated by the two subsensors of the second magnetic field sensor unit, whereby the third measurement signal is assigned a third relation and the fourth measurement signal is assigned a fourth relation. The angle of rotation is then determined.

Abstract: A humidity sensor has, on a substrate, at least one voltage sensor with a sensor region and at least one control electrode. The control electrode is connected to a signal source which is designed such that a variable control voltage can be applied to the control electrode. A moisture-permeable sensor layer whose dielectric constant depends on humidity is located on the sensor region. The control electrode is adjacent to the sensor layer in such a manner that the measured voltage signal of the voltage sensor depends on the control voltage and the humidity. The voltage sensor is connected to an analysis unit for ascertaining the humidity on the basis of the measured voltage signal. In the vertical projection onto the plane in which the substrate extends, the control electrode is located laterally next to the sensor region.

Abstract: A semiconductor housing is provided that includes a metal support and a semiconductor body, a bottom side thereof being connected to the metal support. The semiconductor body has metal surfaces that are connected to pins by bond wires and a plastic compound, which completely surrounds the bond wires and partially surrounds the semiconductor body. The plastic compound has an opening on the top side of the semiconductor body, and a barrier is formed on the top side of the semiconductor body. The barrier has a top area and a base area spaced from the edges of the semiconductor body and an internal clearance of the barrier determines a size of the opening. Whereby, a portion of the plastic compound has a height greater than the barrier, and a fixing layer is formed between the base area of the barrier and the top side of the semiconductor body.

Abstract: The invention relates to an integrated circuit arrangement with connection contacts for the serial exchange of data and/or signals with external components and apparatuses and with a control apparatus and/or a serial interface for the clocked receiving of data by means of a signal voltage on such a connection contact, which voltage is modulated between at least one low, one middle and one high voltage state. The control apparatus and/or the interface are designed in such a manner that data is sent in a sending mode via the connection contact in that the switching apparatus, after having received a slope changing in particular from the middle voltage state into in particular the higher or the lower voltage state, pulls the voltage state into the in particular opposite lower or higher voltage state. Furthermore, the invention relates to an apparatus and a process for operating such a circuit arrangement.

Abstract: In a method for producing a proton-conductive, structured electrolyte membrane, particularly for a fuel cell, a coating, which comprises at least one ion-conductive cross-linking component having at least one acid group and at least one photoactive substances interacting therewith, is applied onto a solid body surface. The coating is optically masked in that at least one region of the coating, in which the electrolyte membrane is supposed to be, is exposed such that the cross-linking component cross-links with the photoactive substances to form a polymer and/or copolymer network adhering to the solid body surface. At least one unexposed region of the coating is removed in order to structure the electrolyte membrane.

Abstract: A measuring apparatus for detecting a relative movement between at least one magnetic field sensor array integrated into a semiconductor chip and a transmitter for the sensor array is provided. The transmitter and the sensor array are exposed to the magnetic flux of a magnet. The transmitter has teeth that can be moved past the sensor array during the relative movement, or the transmitter has magnet poles that can be moved past the sensor array during the relative movement. The magnetic field sensor includes a differential magnetic field sensor which comprises a first measuring plate and a second measuring plate that are offset in relation to one another in a direction of the relative movement. The magnetic field sensor also includes a sensor element which is designed to measure the absolute magnetic field and comprises a third measuring plate that is arranged between the first measuring plate and the second measuring plate in the direction of the relative movement.

Abstract: A semiconductor gas sensor is provided that includes a semiconductor body with a passivation layer formed on a surface of thereof. A gas-sensitive control electrode is separated from a channel region by a gap or a control electrode is arranged as a first plate of a capacitor with a gap and a second plate of the capacitor is connected to a gate of the field effect transistor implemented as a Capacitively Controlled Field Effect Transistor. The control electrode has is connected to a reference voltage. A support area is provided with a first support structure and a second support structure. A contact area is provided on the surface of the semiconductor body. A first contact region has a frictional connection and an electrical connection with the control electrode and the second contact region has at least a frictional connection with the control electrode.

Abstract: In a process for testing the measurement accuracy of at least one magnetic field sensor, in particular during manufacturing, a semiconductor wafer that has at least two semiconductor chips is provided. A measurement coil is integrated into at least one first semiconductor chip, and a magnetic field-sensitive electric circuit is integrated into at least one second semiconductor chip that forms the magnetic field sensor. The first semiconductor chip, of which at least one is present, is positioned at an exciter coil that is supplied with current in order to generate a reference magnetic field. With the aid of the measurement coil a first measured value that is dependent on the magnetic flux density is acquired and the current in the exciter coil is adjusted depending on the first measured value. The second semiconductor chip, of which at least one is present, is positioned at the exciter coil.

Abstract: A monolithic sensor arrangement includes a housing, a sensor integrated in the housing, and two or three connecting contacts deployed on the housing so as to provide a contact with the sensor. The housing also includes an integrated digital circuit includes a freely programmable digital processor, a program memory and a data memory, which are used to control and/or process the functionalities and/or the measured data of the sensor.

Abstract: A control device is provided that includes a plate and a control unit. The control unit has a rotary unit designed as a transmitter unit and a receiver unit. The transmitter unit has a top surface and a bottom side, wherein a base is formed on the bottom side in a center region and a first magnetizable element or a first magnet for positioning the transmitter unit at a predefined position over the receiver unit is arranged in the center region. In a rest position the transmitter unit rests with the base on the plate and the axis of rotation extends essentially parallel to the normal of the plate, or the transmitter unit is tilted into an operating position such that the base rests only partially on the plate and the axis of rotation is tilted relative to the normal of the plate.

Abstract: A monitoring device is provided that includes a first line section with a first connection point and a second connection point spaced apart from the first connection point in the direction of the line, and with a control unit and with a first current sensing unit, having a current source. A first switch is inserted into the first connecting line and connects the first current source to the first connection point or disconnects it therefrom. In a first state the first switch is closed and the first current is impressed on the first line section and a first voltage determined by the amplitude of the actual current, and in a second state the first switch is open and a second voltage is determined, and the control unit is configured to ascertain the amplitude of the first actual current from the two voltages.

Abstract: An integrated magnetic field sensor, having a semiconductor body with a surface and a rear surface, and a metal carrier, with a front and a rear, wherein the rear of the semiconductor body is connected to the front of the metal carrier in a non-positive manner, and a Hall sensor, embodied on the surface of the semiconductor body, with a main extension surface, and a magnet with a first magnetic pole embodied along a first surface, which first magnetic pole has a central axis embodied in a perpendicular manner on the first surface, wherein the metal carrier, the magnet and the semiconductor body are arranged in a common housing and precisely one or at least one Hall sensor is arranged in the housing.

Abstract: A semiconductor gas sensor is provided that has a gas-sensitive gate electrode separated by a gap from a channel region and is embodied as a suspended gate field effect transistor or the gate electrode is arranged as a first plate of a capacitor with gap and a second plate of the capacitor is connected to a gate of the field effect transistor embodied as capacitively controlled and the gate electrode has a conductive carrier layer with a bearing adhesion promoter layer and a gas-sensitive layer bearing on the adhesion promoter layer, wherein the gate electrode as a gas-sensitive layer has a platinum/gold alloy with a gold proportion in a range of 1% to 20% and a polymer layer with a thickness of less than 100 nm is embodied on the surface of the platinum/gold alloy and the gap is filled with an oxygen-free gas mixture.