Abstract: A semiconductor housing is provided that includes a metal support and a semiconductor body, a bottom side thereof being connected to the metal support. The semiconductor body has metal surfaces that are connected to pins by bond wires and a plastic compound, which completely surrounds the bond wires and partially surrounds the semiconductor body. The plastic compound has an opening on the top side of the semiconductor body, and a barrier is formed on the top side of the semiconductor body. The barrier has a top area and a base area spaced from the edges of the semiconductor body and an internal clearance of the barrier determines a size of the opening. Whereby, a portion of the plastic compound has a height greater than the barrier, and a fixing layer is formed between the base area of the barrier and the top side of the semiconductor body.

Abstract: A semiconductor gas sensor is provided that includes a semiconductor body with a passivation layer formed on a surface of thereof. A gas-sensitive control electrode is separated from a channel region by a gap or a control electrode is arranged as a first plate of a capacitor with a gap and a second plate of the capacitor is connected to a gate of the field effect transistor implemented as a Capacitively Controlled Field Effect Transistor. The control electrode has is connected to a reference voltage. A support area is provided with a first support structure and a second support structure. A contact area is provided on the surface of the semiconductor body. A first contact region has a frictional connection and an electrical connection with the control electrode and the second contact region has at least a frictional connection with the control electrode.

Abstract: The invention relates to an integrated circuit arrangement with connection contacts for the serial exchange of data and/or signals with external components and apparatuses and with a control apparatus and/or a serial interface for the clocked receiving of data by means of a signal voltage on such a connection contact, which voltage is modulated between at least one low, one middle and one high voltage state. The control apparatus and/or the interface are designed in such a manner that data is sent in a sending mode via the connection contact in that the switching apparatus, after having received a slope changing in particular from the middle voltage state into in particular the higher or the lower voltage state, pulls the voltage state into the in particular opposite lower or higher voltage state. Furthermore, the invention relates to an apparatus and a process for operating such a circuit arrangement.

Abstract: In a method for producing a proton-conductive, structured electrolyte membrane, particularly for a fuel cell, a coating, which comprises at least one ion-conductive cross-linking component having at least one acid group and at least one photoactive substances interacting therewith, is applied onto a solid body surface. The coating is optically masked in that at least one region of the coating, in which the electrolyte membrane is supposed to be, is exposed such that the cross-linking component cross-links with the photoactive substances to form a polymer and/or copolymer network adhering to the solid body surface. At least one unexposed region of the coating is removed in order to structure the electrolyte membrane.

Abstract: A measuring apparatus for detecting a relative movement between at least one magnetic field sensor array integrated into a semiconductor chip and a transmitter for the sensor array is provided. The transmitter and the sensor array are exposed to the magnetic flux of a magnet. The transmitter has teeth that can be moved past the sensor array during the relative movement, or the transmitter has magnet poles that can be moved past the sensor array during the relative movement. The magnetic field sensor includes a differential magnetic field sensor which comprises a first measuring plate and a second measuring plate that are offset in relation to one another in a direction of the relative movement. The magnetic field sensor also includes a sensor element which is designed to measure the absolute magnetic field and comprises a third measuring plate that is arranged between the first measuring plate and the second measuring plate in the direction of the relative movement.

Abstract: In a process for testing the measurement accuracy of at least one magnetic field sensor, in particular during manufacturing, a semiconductor wafer that has at least two semiconductor chips is provided. A measurement coil is integrated into at least one first semiconductor chip, and a magnetic field-sensitive electric circuit is integrated into at least one second semiconductor chip that forms the magnetic field sensor. The first semiconductor chip, of which at least one is present, is positioned at an exciter coil that is supplied with current in order to generate a reference magnetic field. With the aid of the measurement coil a first measured value that is dependent on the magnetic flux density is acquired and the current in the exciter coil is adjusted depending on the first measured value. The second semiconductor chip, of which at least one is present, is positioned at the exciter coil.

Abstract: A monolithic sensor arrangement includes a housing, a sensor integrated in the housing, and two or three connecting contacts deployed on the housing so as to provide a contact with the sensor. The housing also includes an integrated digital circuit includes a freely programmable digital processor, a program memory and a data memory, which are used to control and/or process the functionalities and/or the measured data of the sensor.

Abstract: A control device is provided that includes a plate and a control unit. The control unit has a rotary unit designed as a transmitter unit and a receiver unit. The transmitter unit has a top surface and a bottom side, wherein a base is formed on the bottom side in a center region and a first magnetizable element or a first magnet for positioning the transmitter unit at a predefined position over the receiver unit is arranged in the center region. In a rest position the transmitter unit rests with the base on the plate and the axis of rotation extends essentially parallel to the normal of the plate, or the transmitter unit is tilted into an operating position such that the base rests only partially on the plate and the axis of rotation is tilted relative to the normal of the plate.

Abstract: A magnetic pressure sensor is provided that includes a semiconductor body with a top side and a back side, a Hall sensor formed on the top side of the semiconductor body, a spacer connected to the semiconductor body, whereby the spacer has a recess in the center, and a membrane covering the recess, whereby the membrane has a first material and has a ferromagnetic substance. The ferromagnetic substance concentrates a magnetic flux density of a source formed outside the ferromagnetic material, and the spacer is formed as a circumferential wall and has a second material and the second material is different from the first material in at least one element.

Abstract: Acceleration and/or tilt sensor having a ferromagnetic fluid that is located in a receptacle, and the receptacle constitutes a neutral position for the fluid, and the fluid is permanently magnetized, and a magnetic field detector arrangement is located at the receptacle to detect a displacement of the fluid, wherein a portion of the fluid can be displaced relative to the receptacle from the neutral position to an operating position by an external force while maintaining a continuous surface with the portion of the fluid remaining in the neutral position, and the fluid returns to the neutral position after removal of the external force.

Abstract: A current sensor having a magnetic field sensor, and a variable current source connected to the magnetic field sensor, and a first differential amplifier, connected to the magnetic field sensor, for amplifying a first sensor voltage. A second differential amplifier is provided and the second differential amplifier is connected to the first differential amplifier and to the current source. In the case of the first sensor voltage, a first operating current is present at the magnetic field sensor and in the case of a second sensor voltage, a second operating current is present, whereby the second Hall voltage is smaller than the first sensor voltage and the second operating current is greater than the first operating current.

Abstract: An integrated magnetic field measuring device is provided that includes a semiconductor body arranged on a metal substrate and having a first surface, and a plurality of metal surfaces formed on the surface, a first magnetic field sensor, formed in the semiconductor body and having a first sensor signal, and second magnetic field sensor having a second sensor signal, and a current-carrying first conductor. A third magnetic field sensor with a third sensor signal is formed in the semiconductor body. The first magnetic field sensor, the second magnetic field sensor, and the third magnetic field sensor have a substantially identical orientation to Earth's magnetic field and a different distance to the first conductor and the magnetic field of the first conductor simultaneously penetrates the first magnetic field sensor, the second magnetic field sensor, and the third magnetic field sensor.

Abstract: A gas sensor having at least one gas-sensitive electrically conductive layer having a surface region which can be brought into contact with a target gas and in which the work function depends on the concentration of the target gas in contact therewith. At least one electrical potential sensor is capacitively coupled to the surface region via an air gap. The surface region is structured by at least one recess in which a flat material element which is connected to the gas-sensitive layer in an electrically conductive manner is arranged, the material of the material element differing from that of the gas-sensitive layer and comprising a metal and/or a metal-containing chemical compound.

Abstract: A semiconductor component on a semiconductor chip comprises at least one sensor element for measuring a physical quantity and an evaluator. The semiconductor component can be switched between a first and a second operating mode. In the first operating mode, the sensor element is sensitive to the physical quantity to be measured and a measurement signal output of the sensor element is connected to an input connection of the evaluator. In the second operating mode, the sensor element is not sensitive to the physical quantity to be measured and/or the signal path between the measurement signal output and the input connection is interrupted. A test signal source for generating a test signal simulating the measurement signal of the sensor element is arranged on the semiconductor chip. In the second operating mode, the test signal source is connected or capable of being connected to the input connection of the evaluator.

Abstract: The present invention relates to a LIN receiver having sleep/wake-up functionality, which has an input (LINI) to a LIN bus (LIN), an output (RXDO), terminals for at least one supply voltage (BVDD), and transistors (M1 through M17), the transistors (M1 through M17) being switched to activate the receiver in the recessive state of the LIN bus via a state change on the LIN bus into an active state of the receiver. In particular, the input (LINI) is connected between components of a voltage-to-current converter (SSW), in particular between a first and a second resistors, (R2, R2).

Abstract: A method for programming a Hall sensor having a controller in which the Hall sensor or a programmable circuit component integrated therein is programmed by clocking or modulating a Hall sensor power supply voltage (VDD). A clocked or modulated controller power supply voltage (VBAT) is applied to the controller in clocked or modulated form; and where the clock or modulated Hall sensor power supply voltage (VDD) is applied to the Hall sensor by the controller as a function of the clocked or modulated controller power supply voltage (VBAT).

Abstract: A method and circuit arrangement is provided for controlling switching transistors of an integrated circuit, with a bridge circuit and with a control unit, which is designed and/or has a program so that the control unit is designed as a measuring device and measures a bridge voltage of the bridge circuit, outputs an adjusting signal for adjusting a component of a bridge circuit, and outputs a control signal for activating the switching transistors. When the bridge circuit) has a branch with a resistor network and a transistor connected in series, and the control unit is designed and/or has a program so that the adjusting signal for adjusting a resistance value of the resistor network is switchable as the component dependent on the bridge voltage.

Abstract: A measurement device has at least one sensor for detecting a parameter, a data storage unit, and a power supply for said sensor and data storage unit. In addition to the first sensor, the measurement device has at least one second sensor connected to the power supply and to the data storage unit. The second sensor is provided for detecting a physical quantity acting on the first sensor and is capable of permanently altering the measurement characteristic of the first sensor. An evaluator functions coactively with the second sensor and the data storage unit so that the permanent alteration of the measurement characteristic of the first sensor is recordable as a function of the measurement signal of the second sensor.

Abstract: The invention relates to a moisture sensor which comprises a receiving area on its surface for a moisture film, the layer thickness of which is dependent on the relative humidity in the surrounding of the receiving area. The moisture sensor has a signal source which is connected to at least one control electrode at at least one infeed, the electrode abutting the receiving area, for providing a control voltage to the moisture film. The moisture sensor comprises at least one potential sensor which has at least one sensor area, under the receiving area, which is spaced apart from the at least one infeed. The sensor area is electrically insulated from the receiving area by an insulation layer, located between the sensor area and the receiving area, in such a way that an electrical potential can be capacitively detected by means of the potential sensor, the potential being dependent on the layer thickness of the moisture film and the control voltage.

Abstract: An integrated circuit for an asynchronous serial data transfer comprises a sampler to sample the asynchronous serial data using a sampling clock. A bit length counter determines a bit time by counting a number (m) of predetermined clock cycles, where the bit length terminal variably adjusts the number (m) of clock cycles of the bit length counter.