Abstract: A sensor device is provided for suppressing a magnetic stray field, having a semiconductor body with a surface formed in an x-y plane, the x-direction and the y-direction are formed orthogonal to one another, and the sensor device has a first pixel cell and a second pixel cell integrated into the surface of the semiconductor body. A first magnetic field sensor detects a magnetic field in the x-direction and a second magnetic field sensor detects a magnetic field in the y-direction. The two pixel cells in a projection along an imaginary lengthening of the axis are arranged at an edge or next to an extension of the magnet in the x-y plane.

Abstract: A sensor device for suppressing a magnetic stray field, having a semiconductor body with a surface, formed in an x-y plane, and a back surface. Each circle half of a disk-shaped magnet has two magnetic poles and the magnet is rotatable relative to the IC housing around a z-direction. An imaginary lengthening of the axis penetrates the magnet in the center of gravity of the main extension surface of the magnet. A first pixel cell and a second pixel cell are integrated into the surface of the semiconductor body together with a circuit arrangement, and each pixel cell has a first magnetic field sensor and a second magnetic field sensor. The first pixel cell is spaced apart from the second pixel cell along a connecting line, and the first pixel cell in a projection along an imaginary lengthening of the axis is arranged within the two inner circle segments.

Abstract: A device for increasing the magnetic flux density includes a semiconductor body and a first magnetic sensor integrated into the semiconductor body, whereby a housing section, which forms a cavity, is arranged above the sensor on the semiconductor surface and the cavity is filled with a ferromagnetic material and the material comprises a liquid.

Abstract: A sensor device for suppressing a magnetic stray field, having a semiconductor body, a first pixel cell and a second pixel cell integrated into a surface of the semiconductor body together with a circuit arrangement. Each pixel cell has a first magnetic field sensor and a second magnetic field sensor to detect a magnetic field in the x-direction and a magnetic field in the y-direction. The first pixel cell is spaced apart from the second pixel cell along a connecting line, and the substrate and the semiconductor body are disposed in the same IC package. A magnet is provided that has a planar main extension surface in the direction of an x-y plane and has a magnetization with four magnetic poles in the direction of the x-y plane. The IC package is spaced apart from the main extension surface of the magnet in the z-direction and at least partially within a ring magnet.

Abstract: A method for testing a CMOS transistor with an electrical testing unit, the CMOS transistor being formed in a semiconductor substrate of a semiconductor wafer. A plurality of CMOS transistors are formed on the semiconductor wafer and the electrical testing unit has a support plate and a metal layer formed on the support plate. The CMOS transistor having a first terminal contact, a second terminal contact and a third terminal contact, the second terminal contact configured as an electrically open control contact and in a process step the metal layer is positioned above the semiconductor wafer over the control contact and a potential difference between the first terminal contact and a third terminal contact is generated. The control contact is capacitively coupled by applying a drive potential to the metal layer, and the function of the CMOS transistor is tested by measuring an electrical variable dependent on the capacitive coupling.

Abstract: A measurement device for determining an angular position, having a magnet device and a sensor device that are rotatable relative to one another. The magnet device has a first north pole face of a first magnetic north pole and a first south pole face of a first magnetic south pole. The magnet device has a second north pole face of a second magnetic north pole and a second south pole face of a second magnetic south pole. The sensor device is located in a region between the first north pole face and the first south pole face and between the second north pole face and the second south pole face. The sensor device has a first magnetic field sensor and a second magnetic field sensor. The first magnetic field sensor and the second magnetic field sensor are spaced apart from one another for ascertaining a magnetic field difference.

Abstract: A test system having a manipulation device and a test unit. The manipulation device has a receiving unit with a socket that accommodates a packaged integrated circuit, which has a top side and a bottom side. A plurality of electrical terminal contacts are formed on the bottom side. In a first state, the manipulation device provides the integrated circuit to the test unit, and during the first state the test unit is disposed above the top side of the integrated circuit and forms a connection with the manipulation device, and the test unit carries out a function test on the integrated circuit. A sensor device is formed on the top side, and the top side of the integrated circuit is oriented in a direction of the test unit and the electrical terminal contacts are electrically connected to the receiving unit of the manipulation device.

Abstract: A Hall sensor is provided having a first Hall element with a first terminal contact and with a second terminal contact and with a third terminal contact, a second Hall element with a fourth terminal contact and with a fifth terminal contact and with a sixth terminal contact, a third Hall element with a seventh terminal contact and with an eighth terminal contact and with a ninth terminal contact, and a fourth Hall element with a tenth terminal contact and with an eleventh terminal contact and with a twelfth terminal contact. The first Hall element and the second Hall element and the third Hall element and the fourth Hall element are connectable in series.

Abstract: The invention relates to a sensor fuel cell that can be activated by a first substance (O2) in its environment. The sensor fuel cell includes a catalytically active anode, a cathode that has a cathode surface at least partially exposed to the environment, and a proton-conductive membrane located between the anode and the cathode so as to convey protons through from the anode to the cathode. An anode surface of the anode is at least partially exposed to the environment for access of at least one second substance (H2) from the environment to the anode. Such a disposition enables access of a first reactant in the form for example of oxygen from the ambient air to the cathode, and additionally access of a second reactant in the form for example of hydrogen from the ambient air to the free surface of the anode.

Abstract: A control device is provided that includes a plate and a control unit. The control unit has a rotary unit designed as a transmitter unit and a receiver unit. The transmitter unit has a top surface and a bottom side, wherein a base is formed on the bottom side in a center region and a first magnetizable element or a first magnet for positioning the transmitter unit at a predefined position over the receiver unit is arranged in the center region. In a rest position the transmitter unit rests with the base on the plate and the axis of rotation extends essentially parallel to the normal of the plate, or the transmitter unit is tilted into an operating position such that the base rests only partially on the plate and the axis of rotation is tilted relative to the normal of the plate.

Abstract: A bonding contact area on a semiconductor substrate is provided that includes a reinforcing structure having at least one conductive material layer arranged on the semiconductor substrate to receive the patterned reinforcing structure, a metal layer formed as a bonding contact layer with a bonding surface and arranged on a conductive material layer. Whereby, below the bonding surface, an oxide layer having at least about a 2 ?m thickness is arranged, which extends beyond the edge of the bonding surface. The reinforcing structure is arranged in the oxide layer, when viewed looking down onto the bonding surface, outside the bonding surface within the oxide layer.

Abstract: A continuous-time delta sigma modulator, having an integrator and a comparator clocked with a clock frequency that are connected in a feedback loop, having a voltage source that is connected to the comparator for applying a threshold voltage to the comparator, in which an integration time constant of the integrator has a first resistor and a first capacitor, in which the voltage source has a second resistor and a second capacitor for setting the threshold voltage, in which the first resistor and the second resistor are part of a resistor pairing structure, and in which the first capacitor and the second capacitor are part of a capacitor pairing structure.

Abstract: A device having an integrated circuit and a circuit package. A first terminal contact, a second terminal contact, and a third terminal contact are brought out of the circuit package. The first terminal contact and the second terminal contact are each connected to terminals of the integrated circuit for power supply. The third terminal contact is connected to a terminal of the integrated circuit in the circuit package for signal transmission. A first capacitor is connected to the first terminal contact and a second capacitor is connected to the third terminal contact, wherein a fourth terminal contact and a fifth terminal contact are brought out of the circuit package, and the first capacitor is connected to the fourth terminal contact, and the second capacitor is connected to the fifth terminal contact.

Abstract: A circuit assembly having a controller in which the Hall sensor or a programmable circuit component integrated therein is programmed by clocking or modulating a Hall sensor power supply voltage. A clocked or modulated controller power supply voltage is applied to the controller in clocked or modulated form; and where the clock or modulated Hall sensor power supply voltage is applied to the Hall sensor by the controller as a function of the clocked or modulated controller power supply voltage.

Abstract: The invention relates to a circuit for generating a true, circuit-specific and time-invariant random binary number, having: a matrix of K?L delay elements that can be connected to each other by means of L?1 single or double commutation circuits into chains of delay elements of length L, a single or double demultiplexer connected before the matrix, a single or double multiplexer connection after the matrix, and a run time or number comparator, wherein the setting of the commutation circuits, the demultiplexer, and the multiplexer can be prescribed by a control signal, wherein the circuit comprises a channel code encoder whereby code words of a channel code can be generated and a transcriber, whereby code words of the channel code can be transcribed into the control signal of the L?1 single or double commutation circuits, and a method for generating a true, circuit-specific and time-invariant random number by means of a matrix of L?K delay elements, L?1 single or double commutation circuits, a single or double

Abstract: A magnetic field sensor having a support with a top side and a bottom side, whereby a Hall plate is provided on the top side of the support and the Hall plate comprises a carbon-containing layer.

Abstract: An integrated current sensor is provided, having a semiconductor body arranged on a metal substrate, having a first surface with a passivation layer embodied on the first surface and a magnetic field concentrator embodied in a flat manner under the semiconductor body, a first Hall-effect sensor embodied under the passivation layer in the semiconductor body, a second Hall-effect sensor embodied under the passivation layer in the semiconductor body, wherein a first conductor is provided embodied on the first surface between the first Hall-effect sensor and the second Hall-effect sensor, and the magnetic field concentrator is embodied under the first Hall-effect sensor and under the second Hall-effect sensor and under the first conductor.

Abstract: A force sensor comprising a substrate, a semiconductor body, and a piezoresistive element provided on a top surface of the semiconductor body. The semiconductor body is connected to the substrate in a force-fit manner, and includes a first wing which is provided on the top surface of the semiconductor body and being connected to the semiconductor body in a force-fit manner. A first force application area is provided on the first wing. A second wing has a second force application area provided opposite the first wing. The piezoresistive element is disposed between the first wing and the second wing. A force distribution component is connected to the first force application area and the second force application area in a force-fit manner. The force distribution component having a first surface which is oriented away from the top surface of the semiconductor body and includes a third force application area.

Abstract: A magnetic field sensor is provided, having a first Hall sensor with a first terminal contact and with a second terminal contact and with a third terminal contact and with a fourth terminal contact and with a fifth terminal contact, and a second Hall sensor with a sixth terminal contact and with a seventh terminal contact and with an eighth terminal contact and with a ninth terminal contact and with a tenth terminal contact, whereby the first terminal contact is connected to the fifth terminal contact and to the sixth terminal contact and to the tenth terminal contact, and the second terminal contact is connected to the ninth terminal contact, and the fourth terminal contact is connected to the seventh terminal contact.

Abstract: A semiconductor gas sensor is provided that has a gas-sensitive gate electrode separated by a gap from a channel region and is embodied as a suspended gate field effect transistor or the gate electrode is arranged as a first plate of a capacitor with gap and a second plate of the capacitor is connected to a gate of the field effect transistor embodied as capacitively controlled and the gate electrode has a conductive carrier layer with a bearing adhesion promoter layer and a gas-sensitive layer bearing on the adhesion promoter layer, wherein the gate electrode as a gas-sensitive layer has a platinum/gold alloy with a gold proportion in a range of 1% to 20% and a polymer layer with a thickness of less than 100 nm is embodied on the surface of the platinum/gold alloy and the gap is filled with an oxygen-free gas mixture.