Patents Assigned to Micronas GmbH
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Patent number: 9093690Abstract: The invention relates to a sensor fuel cell that can be activated by a first substance (O2) in its environment. The sensor fuel cell includes a catalytically active anode, a cathode that has a cathode surface at least partially exposed to the environment, and a proton-conductive membrane located between the anode and the cathode so as to convey protons through from the anode to the cathode. An anode surface of the anode is at least partially exposed to the environment for access of at least one second substance (H2) from the environment to the anode. Such a disposition enables access of a first reactant in the form for example of oxygen from the ambient air to the cathode, and additionally access of a second reactant in the form for example of hydrogen from the ambient air to the free surface of the anode.Type: GrantFiled: November 6, 2008Date of Patent: July 28, 2015Assignee: Micronas GmbHInventors: Gilbert Erdler, Holger Reinecke, Claas Mueller, Mirko Frank
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Patent number: 9064707Abstract: A bonding contact area on a semiconductor substrate is provided that includes a reinforcing structure having at least one conductive material layer arranged on the semiconductor substrate to receive the patterned reinforcing structure, a metal layer formed as a bonding contact layer with a bonding surface and arranged on a conductive material layer. Whereby, below the bonding surface, an oxide layer having at least about a 2 ?m thickness is arranged, which extends beyond the edge of the bonding surface. The reinforcing structure is arranged in the oxide layer, when viewed looking down onto the bonding surface, outside the bonding surface within the oxide layer.Type: GrantFiled: September 14, 2012Date of Patent: June 23, 2015Assignee: Micronas GmbHInventors: Hans-Guenter Zimmer, Pascal Stumpf
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Patent number: 9024795Abstract: A continuous-time delta sigma modulator, having an integrator and a comparator clocked with a clock frequency that are connected in a feedback loop, having a voltage source that is connected to the comparator for applying a threshold voltage to the comparator, in which an integration time constant of the integrator has a first resistor and a first capacitor, in which the voltage source has a second resistor and a second capacitor for setting the threshold voltage, in which the first resistor and the second resistor are part of a resistor pairing structure, and in which the first capacitor and the second capacitor are part of a capacitor pairing structure.Type: GrantFiled: April 24, 2014Date of Patent: May 5, 2015Assignee: Micronas GmbHInventor: David Muthers
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Patent number: 9019717Abstract: A device having an integrated circuit and a circuit package. A first terminal contact, a second terminal contact, and a third terminal contact are brought out of the circuit package. The first terminal contact and the second terminal contact are each connected to terminals of the integrated circuit for power supply. The third terminal contact is connected to a terminal of the integrated circuit in the circuit package for signal transmission. A first capacitor is connected to the first terminal contact and a second capacitor is connected to the third terminal contact, wherein a fourth terminal contact and a fifth terminal contact are brought out of the circuit package, and the first capacitor is connected to the fourth terminal contact, and the second capacitor is connected to the fifth terminal contact.Type: GrantFiled: November 21, 2012Date of Patent: April 28, 2015Assignee: Micronas GmbHInventor: Gerd Scholten
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Patent number: 9000762Abstract: A circuit assembly having a controller in which the Hall sensor or a programmable circuit component integrated therein is programmed by clocking or modulating a Hall sensor power supply voltage. A clocked or modulated controller power supply voltage is applied to the controller in clocked or modulated form; and where the clock or modulated Hall sensor power supply voltage is applied to the Hall sensor by the controller as a function of the clocked or modulated controller power supply voltage.Type: GrantFiled: December 27, 2012Date of Patent: April 7, 2015Assignee: Micronas GmbHInventors: Adriano De Rosa, Gualtiero Bagnuoli
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Patent number: 8990276Abstract: The invention relates to a circuit for generating a true, circuit-specific and time-invariant random binary number, having: a matrix of K?L delay elements that can be connected to each other by means of L?1 single or double commutation circuits into chains of delay elements of length L, a single or double demultiplexer connected before the matrix, a single or double multiplexer connection after the matrix, and a run time or number comparator, wherein the setting of the commutation circuits, the demultiplexer, and the multiplexer can be prescribed by a control signal, wherein the circuit comprises a channel code encoder whereby code words of a channel code can be generated and a transcriber, whereby code words of the channel code can be transcribed into the control signal of the L?1 single or double commutation circuits, and a method for generating a true, circuit-specific and time-invariant random number by means of a matrix of L?K delay elements, L?1 single or double commutation circuits, a single or doubleType: GrantFiled: December 11, 2008Date of Patent: March 24, 2015Assignee: Micronas GmbHInventors: Dejan Lazich, Micaela Wuensche, Sebastian Kaluza
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Patent number: 8981508Abstract: A magnetic field sensor having a support with a top side and a bottom side, whereby a Hall plate is provided on the top side of the support and the Hall plate comprises a carbon-containing layer.Type: GrantFiled: December 10, 2013Date of Patent: March 17, 2015Assignee: Micronas GmbHInventor: Joerg Franke
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Patent number: 8957668Abstract: An integrated current sensor is provided, having a semiconductor body arranged on a metal substrate, having a first surface with a passivation layer embodied on the first surface and a magnetic field concentrator embodied in a flat manner under the semiconductor body, a first Hall-effect sensor embodied under the passivation layer in the semiconductor body, a second Hall-effect sensor embodied under the passivation layer in the semiconductor body, wherein a first conductor is provided embodied on the first surface between the first Hall-effect sensor and the second Hall-effect sensor, and the magnetic field concentrator is embodied under the first Hall-effect sensor and under the second Hall-effect sensor and under the first conductor.Type: GrantFiled: July 13, 2012Date of Patent: February 17, 2015Assignee: Micronas GmbHInventor: Joerg Franke
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Patent number: 8915152Abstract: A force sensor comprising a substrate, a semiconductor body, and a piezoresistive element provided on a top surface of the semiconductor body. The semiconductor body is connected to the substrate in a force-fit manner, and includes a first wing which is provided on the top surface of the semiconductor body and being connected to the semiconductor body in a force-fit manner. A first force application area is provided on the first wing. A second wing has a second force application area provided opposite the first wing. The piezoresistive element is disposed between the first wing and the second wing. A force distribution component is connected to the first force application area and the second force application area in a force-fit manner. The force distribution component having a first surface which is oriented away from the top surface of the semiconductor body and includes a third force application area.Type: GrantFiled: September 13, 2012Date of Patent: December 23, 2014Assignees: Micronas GmbH, Albert-Ludwigs-Universitaet FrieburgInventors: Marc Baumann, Patrick Ruther, Alexander Peter, Oliver Paul
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Patent number: 8899098Abstract: A semiconductor gas sensor is provided that has a gas-sensitive gate electrode separated by a gap from a channel region and is embodied as a suspended gate field effect transistor or the gate electrode is arranged as a first plate of a capacitor with gap and a second plate of the capacitor is connected to a gate of the field effect transistor embodied as capacitively controlled and the gate electrode has a conductive carrier layer with a bearing adhesion promoter layer and a gas-sensitive layer bearing on the adhesion promoter layer, wherein the gate electrode as a gas-sensitive layer has a platinum/gold alloy with a gold proportion in a range of 1% to 20% and a polymer layer with a thickness of less than 100 nm is embodied on the surface of the platinum/gold alloy and the gap is filled with an oxygen-free gas mixture.Type: GrantFiled: November 21, 2012Date of Patent: December 2, 2014Assignee: Micronas GmbHInventors: Christoph Senft, Stefan Simon, Walter Hansch
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Patent number: 8901923Abstract: A magnetic field sensor is provided, having a first Hall sensor with a first terminal contact and with a second terminal contact and with a third terminal contact and with a fourth terminal contact and with a fifth terminal contact, and a second Hall sensor with a sixth terminal contact and with a seventh terminal contact and with an eighth terminal contact and with a ninth terminal contact and with a tenth terminal contact, whereby the first terminal contact is connected to the fifth terminal contact and to the sixth terminal contact and to the tenth terminal contact, and the second terminal contact is connected to the ninth terminal contact, and the fourth terminal contact is connected to the seventh terminal contact.Type: GrantFiled: September 27, 2011Date of Patent: December 2, 2014Assignees: Micronas GmbH, Albert-Ludwigs-Universitaet FreiburgInventors: Timo Kaufmann, Patrick Ruther, Fabian Purkl, Olvier Paul
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Publication number: 20140347045Abstract: A three-dimensional Hall sensor can be used for detecting a spatial magnetic field. A method for measuring a spatial magnetic field can be performed using this Hall sensor. The Hall sensor comprises an electrically conducting base body and at least three electrode pairs, wherein each electrode pair has a first terminal and a second terminal, which are arranged such on the base body, that a current can flow from the first terminal to the second terminal through the base body. At least three first terminals are arranged on a first surface of the base body and at least three second terminals are arranged on the second surface, different from the first surface of the base body, wherein the first and the second surfaces oppose each other.Type: ApplicationFiled: May 21, 2014Publication date: November 27, 2014Applicant: Micronas GmbHInventors: Oliver Paul, Patrick Ruther, Aftab Taimur
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Publication number: 20140346579Abstract: A magnetic field sensor device having a semiconductor body, whereby the semiconductor body has a top side and a bottom side, and whereby the semiconductor body has a substrate layer and a passivation layer formed above the substrate on the top side of the semiconductor body, and one or more integrated electronic components are formed in the substrate layer of the semiconductor body, and a Hall plate is provided on the top side of the semiconductor body above the passivation layer, and the Hall plate is formed of a graphene compound.Type: ApplicationFiled: May 27, 2014Publication date: November 27, 2014Applicant: Micronas GmbHInventor: Joerg FRANKE
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Publication number: 20140333299Abstract: A measuring system, having a magnetic device for generating a magnetic field and having a magnetic field sensor with a sensor surface for detecting a flux density of the magnetic field penetrating the sensor surface at least in a first spatial direction, whereby the magnetic field sensor is fixedly positioned relative to the magnetic device. The magnetic device can have at least one permanent magnet and a flux concentrator made of a ferromagnetic material. The permanent magnet has at least two pole surfaces and an outer surface. The flux concentrator can have a smaller dimensions than the outer surface of the permanent magnet. The flux concentrator can be positioned within the outer surface of the permanent magnet and the flux concentrator and the permanent magnet can have a magnetic force closure.Type: ApplicationFiled: May 8, 2014Publication date: November 13, 2014Applicant: Micronas GmbHInventors: Klaus HEBERLE, Joerg FRANKE, Oliver BREITWIESER, Timo KAUFMANN
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Publication number: 20140333298Abstract: A measuring system having a magnetic device for generating a magnetic field and having a magnetic field sensor for detecting a flux density of the magnetic field at least in a first spatial direction, whereby the magnetic field sensor is fixedly positioned relative to the magnetic device. The magnetic device has at least two main poles for generating a main magnetic field and at least two secondary poles for generating a secondary magnetic field. The magnetic field in the magnetic field sensor is formed by superposition of the main magnetic field and the secondary magnetic field. The magnetic field sensor is designed to measure the flux density of the superposition in the first spatial direction, and, in the magnetic field sensor, the secondary magnetic field compensates at least partially the main magnetic field in the first spatial direction.Type: ApplicationFiled: May 8, 2014Publication date: November 13, 2014Applicant: Micronas GmbHInventors: Klaus HEBERLE, Joerg FRANKE, Oliver BREITWIESER, Timo KAUFMANN
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Patent number: 8884611Abstract: An angle sensor for determining an angle between a sensor system and a magnetic field has a magnet which generates the magnetic field and is adjustable in different rotational positions relative to the sensor system with regard to a rotation axis. The sensor system has a first magnetic field sensor for detecting a first magnetic field component oriented transversely to the rotation axis and a second magnetic field sensor for detecting a second magnetic field component, which is situated transversely to a plane extending from the rotation axis and the first magnetic field component. A third magnetic field sensor of the sensor system detects a third magnetic field component, which is oriented in the direction of the rotation axis. The sensor system is positioned relative to the magnet in such a way that the third magnetic field component is largely independent of the rotational position.Type: GrantFiled: February 2, 2011Date of Patent: November 11, 2014Assignee: Micronas GmbHInventor: Norbert Hunger
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Patent number: 8878524Abstract: An integrated magnetic field measuring device is provided that includes a semiconductor body arranged on a metal substrate and having a first surface, and a plurality of metal surfaces formed on the surface, a first magnetic field sensor, formed in the semiconductor body and having a first sensor signal, and second magnetic field sensor having a second sensor signal, and a current-carrying first conductor. A third magnetic field sensor with a third sensor signal is formed in the semiconductor body. The first magnetic field sensor, the second magnetic field sensor, and the third magnetic field sensor have a substantially identical orientation to Earth's magnetic field and a different distance to the first conductor and the magnetic field of the first conductor simultaneously penetrates the first magnetic field sensor, the second magnetic field sensor, and the third magnetic field sensor.Type: GrantFiled: October 22, 2012Date of Patent: November 4, 2014Assignee: Micronas GmbHInventor: Klaus Heberle
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Patent number: 8878529Abstract: A method for monitoring the function of a sensor module including sensor which generates a measurement signal for a physical quantity to be determined and applies the measurement signal to an output terminal in an unchanged form or in processed form. In addition, a test signal is generated whose spectrum lies outside the spectrum of the measurement signal. The test signal is supplied at a place in the sensor from which it reaches the output terminal in unchanged form or in processed form only in the case of a functional sensor. An output signal present at the output terminal is compared with the test signal and a diagnosis signal is generated, which indicates whether the test signal is present at the output terminal. The test signal is filtered out of the output signal and the remaining signal is applied as the measurement signal at an output of the sensor module.Type: GrantFiled: March 23, 2011Date of Patent: November 4, 2014Assignee: Micronas GmbHInventors: Dieter Baecher, David Muthers, Joerg Franke
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Publication number: 20140320325Abstract: A continuous-time delta sigma modulator, having an integrator and a comparator clocked with a clock frequency that are connected in a feedback loop, having a voltage source that is connected to the comparator for applying a threshold voltage to the comparator, in which an integration time constant of the integrator has a first resistor and a first capacitor, in which the voltage source has a second resistor and a second capacitor for setting the threshold voltage, in which the first resistor and the second resistor are part of a resistor pairing structure, and in which the first capacitor and the second capacitor are part of a capacitor pairing structure.Type: ApplicationFiled: April 24, 2014Publication date: October 30, 2014Applicant: Micronas GmbHInventor: David MUTHERS
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Patent number: 8866426Abstract: An integrated circuit for controlling an electric motor, which has a primary component with a coil and a permanently magnetic secondary component cooperatively connected via an air gap to the primary component, has a semiconductor substrate in which are integrated a microcontroller and/or a pre-amplifier for controlling the coil of the electric motor. For detecting the position of the permanently magnetic secondary component, at least two magnetic field sensors with their measurement axes aligned crosswise relative to each other are integrated in the semiconductor substrate.Type: GrantFiled: May 11, 2009Date of Patent: October 21, 2014Assignee: Micronas GmbHInventors: Jörg Franke, Klaus Heberle