Abstract: Methods, systems, and devices for auto-calibration of error detection signals are described. An error may be injected into a data signal obtained from a memory array. After injecting the error into the data signal, the data signal may be applied to an error detection circuit of the memory array, where the error detection circuit may output an error signal for the data signal. The error signal may be delayed relative to a control signal by a first amount. A timing signal that controls the propagation of the error signal may be obtained based on delaying the control signal by a second amount. Based on a comparison of the error signal and the timing signal, a third amount for delaying the control signal may be determined.

Abstract: This document describes apparatuses and techniques for implementing data masking with pulse amplitude modulation (PAM) encoded signals of a memory circuit. In various aspects, a data mask function of a memory controller may use an unassigned or prohibited PAM signaling state for a set of data lines to indicate data masking to a memory device for a group of data bits. For example, the data mask function may alter a PAM symbol or signal level for at least one data line from a low-voltage state (L) or mid-voltage state (M) state to a high-voltage state (H), resulting in a PAM signaling state for the set of data lines that corresponds data mask indication for the group of data bits. By so doing, the data mask function may indicate data masking for the group of bits without a dedicated data mask signal line, which may enable improved per-line memory bandwidth.

Abstract: Methods, systems, and devices for storing parity during refresh operations are described. In some examples, refresh operations may be performed on a memory device when the memory device is idle. For example, a refresh operation may entail performing a logical operation on first data and a first set of parity bits and second data and a second set of parity bits. The logical operation may generate a third set of parity bits which may be used for data retention purposes. Moreover, during a read operation, the third set of parity bits may be used to recover corrupt or otherwise invalid data in the event of an error.

Abstract: A plurality of device temperature values that are each indicative of a temperature at a respective device of a plurality of devices of a system is identified. A respective composite temperature threshold ratio is determined for each device of the plurality of devices. A respective normalization value based on the respective composite temperature threshold ratio and the respective device temperature value is determined for each device of the plurality of devices. A largest normalization value of the plurality of devices is determined. A composite temperature of the system based on the largest normalization value of the plurality of devices is set.

Abstract: A training operation may be performed by a memory controller to provide a system clock signal and a data clock signal having a desired temporal (e.g., phase) relationship to one another. The system clock and data clock signals may be provided to a memory. In some examples, the memory controller may provide a command to the memory to put the memory in a training mode. Once in the training mode, the memory controller may provide a write command and toggle the data clock signal a number of times. If the memory provides one output, the memory controller may adjust the relationship between the data clock and system clock signals. If the memory provides another output, the memory controller may maintain the relationship between the data clock and system clock signals and exit the training mode.

Abstract: A logical-to-physical (L2P) data structure comprising a plurality of L2P table entries is maintained on the volatile memory device. Each L2P table entry comprises a block number and a page table index corresponding to the non-volatile memory device. A plurality of physical-to-logical (P2L) data structures each comprising a plurality of P2L table entries is maintained on the volatile memory device. Each of the plurality of P2L data structures corresponds to a portion of the L2P data structure.

Abstract: System and techniques for variable execution time atomic operations are described herein. When an atomic operation for a memory device is received, the run length of the operation is measured. If the run length is beyond a threshold, a cache line for the operation is locked while the operation runs. A result of the operation is queued until it can be written to the cache line. At that point, the cache line is unlocked.

Abstract: Methods, systems, and devices for data layout configurations for access operations are described. The memory system may write data to a first set of memory cells using a first write operation having a first type of layout for mapping the data to physical addresses of the memory system in response to receiving a write command. The first set of memory cells may be written to as single-level cells (SLCs), multi-level cells (MLCs), or triple-level cells (TLCs). The memory system may transfer the data to a second set of memory cells of the memory system using a second write operation having the first type of layout. The second set of memory cells may be written to as quad-level cells (QLCs). The memory system may read the data from the second set of memory cells using a read operation having a second type of layout different than the first type of layout.

Abstract: A system includes memory having a bank area and a channel area. The system further includes control circuitry to receive a command to access the memory. Responsive to receiving the command to access the memory, the control circuitry can provide a bank strobe signal for accessing memory in the bank area and at least two channel strobe signals for accessing memory in the channel area. The channel strobe signal may process a smaller amount of data than that processed by the bank strobe signal.

Abstract: Systems, methods, and apparatuses are provided for unipolar programming of memory cells in a semiconductor device. A memory has a plurality of self-selecting memory cells and circuitry configured to program a self-selecting memory cell of the plurality of self-selecting memory cells to a first data state or a second data state by applying a current pulse to the self-selecting memory cell. The current is a set pulse or a reset pulse. The set pulse and the reset pulse have a same polarity.

Abstract: Apparatuses, methods, and systems for storing one data value by programming a first memory cell and a second memory cell are disclosed. The first memory cell and the second memory cell may each be programmed to a first data state, a second data state, or a third data state, and the one data value can correspond to a combination of the first data state, the second data state, or the third data state to which the first memory cell and the second memory cell are programmed, where two combinations of the first data state, the second data state, or the third data state to which the first memory cell is programmable and the first data state, the second data state, or the third data state to which the second memory cell is programmable are ineligible to correspond to the one data value.

Abstract: Implementations described herein relate to host device initiated low temperature thermal throttling. A memory device may receive, from a host device, a low temperature thermal throttling command that indicates for the memory device to initiate a thermal throttling operation based on a temperature of the memory device not satisfying a temperature threshold. The low temperature thermal throttling command may indicate an amount of dummy data to be moved from the host device to a particular location of the memory device associated with the thermal throttling operation. The memory device may perform the thermal throttling operation based on moving the dummy data from the host device to the particular location of the memory device. The memory device may complete the thermal throttling operation based on moving the amount of data from the host device to the particular location of the memory device.

Abstract: Described apparatuses and methods provide automated error correction with memory refresh. Memory devices can include error correction code (ECC) technology to detect or correct one or more bit-errors in data. Dynamic random-access memory (DRAM), including low-power double data rate (LPPDR) synchronous DRAM (SDRAM), performs refresh operations to maintain data stored in a memory array. A refresh operation can be a self-refresh operation or an auto-refresh operation. Described implementations can combine ECC technology with refresh operations to determine a data error with data that is being refreshed or to correct erroneous data that is being refreshed. In an example, data for a read operation is checked for errors. If an error is detected, a corresponding address can be stored. Responsive to the corresponding address being refreshed, corrected data is stored at the corresponding address in conjunction with the refresh operation. Alternatively, data being refreshed can be checked for an error.

Abstract: Apparatuses, systems, and methods for memory module data drives. A memory module includes a number of memory devices as well as module logic. Each memory device provides data by driving voltages along a data bus with a data bus driver of the memory device. An output driver, which is located on the module logic receives the voltages along the data bus and drives voltages of an external data terminal to output the data. The output driver may have a greater drive strength than the data bus driver.

Abstract: A memory device might include registers configured to store expected peak current magnitudes corresponding to a plurality of memory devices containing the memory device, and a controller configured to cause the memory device to determine whether to initiate a next phase of an access operation in response to at least a first sum of an expected peak current magnitude for the next phase of the access operation in a selected operating mode and the expected peak current magnitudes of each of the registers other than a respective register of the memory device relative to a first current demand budget, and a second sum of the expected peak current magnitude for the next phase of the access operation in the selected operating mode and the expected peak current magnitudes of each of the registers other than a respective register of the memory device relative to a second, lower, current demand budget.

Abstract: The present disclosure includes apparatuses and methods related to a memory system including a controller and an array of memory cells. An example apparatus can include a controller configured to receive operational characteristics of an array of memory cells based on prior operations performed by the array of memory cells, determine a set of trim settings for the array of memory cells based on the operational characteristics of the array of memory cells, wherein the set of trim settings are associated with desired operational characteristics for the array of memory cells, and send the set of trim settings to the array of memory cells.

Abstract: Methods, systems, and devices for data compression for mapping tables are described. A memory system may store a table that includes mappings between a set of logical block addresses and a set of physical block addresses. The table may be stored to volatile memory of the memory system and each entry may include a subset of physical block addresses and one or more logical block addresses that correspond to the subset of physical block addresses. In some implementations, a quantity of the entries that each include the subset of physical block addresses and the one or more logical block addresses may be determined based on dividing the set of physical block addresses by a factor. Similarly, a size of the entries may be determined based on dividing the set of physical block addresses by the factor.

Abstract: Arrays of memory cells including an isolation region between first and second access lines, a first memory cell having a control gate in contact with the first access line and a charge storage node having a curved cross-section having a first end in contact with a first portion of the isolation region on a first side of the isolation region and a second end in contact with a second portion of the isolation region on the isolation region's first side, and a second memory cell having a control gate in contact with the second access line and a charge storage node having a curved cross-section having a first end in contact with the first portion of the isolation region on a second side of the isolation region and a second end in contact with the second portion of the isolation region on the isolation region's first side.

Abstract: Integrated circuit structures might include a semiconductor material, a first active area in the semiconductor material, a second active area in the semiconductor material, and an isolation structure comprising a dielectric material deposited in a trench formed in the semiconductor material between the first active area and the second active area. The isolation structure might further include a first edge portion extending below a surface of the semiconductor material to a first depth, a second edge portion extending below the surface of the semiconductor material to the first depth, and an interior portion between the first edge portion and the second edge portion, and extending below the surface of the semiconductor material to a second depth, less than the first depth.

Abstract: Apparatuses, systems, and methods for powered down non-target on-die termination (NT-ODT adjustment). A memory device has NT-ODT powered down logic which couples a designated pin of the command address terminals to an ODT control circuit, bypassing the command decoder, when the memory device is in a powered down state. An NT-ODT adjustment command received along the designated pin causes the ODT control circuit to change a resistance of the termination circuit of the memory while it is in the powered down state.