Abstract: Implementations described herein relate to memory device initialization. In some implementations, a memory device may perform a first initialization for a first set of memory resources, the first initialization being associated with a boot image initialization. The memory device may enable a sideband interface, for data transfer between the memory device and a host device, based on a completion of the first initialization. The memory device may perform a second initialization for a second set of memory resources that is larger than the first set of memory resources. The memory device may enable a peripheral component interconnect express interface, for data transfer between the memory device and the host device, based on a completion of the second initialization.

Abstract: Systems and methods are disclosed including a processing device operatively coupled to memory device. The processing device perform operations comprising receiving, from a memory sub-system controller, a first read command and a second read command; determining that the memory device is in a suspended state; and responsive to determining that a first address range specified by the first read command does not overlap with a second address range specified by the second read command, issuing, to the memory device, the first read command and the second read command collectively.

Abstract: In some implementations, a server device may generate a machine readable code that conveys first information associated with a first entity. The server device may provide an indication of the machine readable code that indicates the first information. The server device may obtain a request to update information conveyed by the machine readable code, the request including an indication of at least one of the machine readable code or the first information. The server device may modify the first information conveyed by the machine readable code to second information, based on the request and based on authenticating the request, wherein the second information includes a first secure information layer indicating the first information and a second secure information layer indicating information indicated by the request. The server device may provide, to the communication device, an indication of at least one of the machine readable code or the second information.

Abstract: Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a first data line, a second data line, a conductive line, and a memory cell coupled to the first and second data lines. The memory cell includes a first transistor and a second transistor. The first transistor includes a first region electrically coupled to the first and second data lines, and charge storage structure electrically separated from the first region. The second transistor includes a second region electrically separated from the first region, the second region electrically coupled to the charge storage structure and the second data line. The conductive line is electrically separated from the first and second channel regions. Part of the conductive line is spanning across part of the first region of the first transistor and part of the second region of the second transistor.

Abstract: Methods, systems, and devices for adaptive write operations for a memory device are described. In an example, the described techniques may include identifying a quantity of access operations performed on a memory array, modifying one or more parameters for a write operation based on the identified quantity of access operations, and writing logic states to the memory array by performing the write operation according to the one or more modified parameters. In some examples, the memory array may include memory cells associated with a configurable material element, such as a chalcogenide material, that stores a logic state based on a material property of the material element. In some examples, the described techniques may at least partially compensate for a change in memory material properties due to aging or other degradation or changes over time (e.g., due to accumulated access operations).

Abstract: A memory die includes a memory array and control logic, operatively coupled with the memory array, to perform operations including receiving a peak power management (PPM) token during a current PPM cycle, in response to receiving the PPM token, determining, based on a set of communication frequencies, whether to communicate auxiliary data to at least one other memory die during the current PPM cycle, wherein each communication frequency of the set of communication frequencies indicates when a respective type of auxiliary data is eligible for communication during a PPM cycle, and in response to determining to communicate auxiliary data to the at least one other memory die, causing a selected type of auxiliary data to be communicated to the at least one other memory die, wherein the selected type of auxiliary data is determined from the set of communication frequencies in view of the current PPM cycle.

Abstract: The present disclosure includes apparatus, methods, and systems for error detection for a semiconductor device. An apparatus includes a memory array, a detector array, and a detector coupled to the detector array. The detector is configured to detect an error in a portion of the detector array and output an output signal to memory components coupled to the detector array in response to detecting the error.

Abstract: Methods, systems, and devices for a memory device with an error correction memory device with fast data access are described. For example, during a read operation, a memory device may be configured to output the data indicated by the read operation concurrent with performing an error correction operation. If the memory device detects an error, the memory device may indicate the error to a host device and, in some cases, output the corrected data to the host device. During a write operation, the memory device may store error detection or correction information associated with data to be stored at the memory device. The memory device may, in some cases, store error detection or correction information generated by the host device.

Abstract: A method includes: creating a logical-to-physical address translation (L2P) bitmap for each respective virtual block programmed across a plane of multiple dice of a memory device, each L2P bitmap identifying logical addresses, within each respective L2P table of a plurality of L2P tables, that belong to a respective virtual block; creating a virtual block (VB) bitmap for each respective L2P table, the VB bitmap identifying virtual blocks to which the respective L2P table points; creating an updated VB bitmap for a first L2P table, of the plurality of L2P tables, based on changes to the first L2P table; determining that an entry in the VB bitmap is different than the entry in the updated VB bitmap, the entry corresponding to a particular virtual block; and identifying and updating, by the processing device, an L2P bitmap associated with the particular virtual block for an L2P mapping corresponding to the entry.

Abstract: An apparatus can include a processor and a vehicular communication component. The vehicular communication component can be configured to generate a vehicular private key and a vehicular public key, provide the vehicular public key to a plurality of external communication components wherein each respective one of the plurality of external communication components is positioned on a different transportation assistance entity, provide data to at least one of the plurality of external communication components, receive, in response to providing the data, additional data from the at least one of the plurality of external communication components, wherein the additional data is encrypted using the vehicular public key, and decrypt the additional data using the vehicular private key.

Abstract: Methods, systems, and devices for memory system logical unit number (LUN) procedures are described. A memory system may receive an indication to convert a LUN for storing LBAs associated with an application from a first type to a second type, where the second type is associated with a higher performance defragmentation process than the first type. The memory system may perform defragmentation on data associated with the LUN based on converting the LUN to the second type. The memory system may determine whether the LBAs stored in the LUN are ordered based on the defragmentation, and the memory system may operate (e.g., execute) the application based on the LBAs being ordered.

Abstract: A method of forming an electronic device comprises forming a stack structure comprising vertically alternating insulative structures and additional insulative structures, and forming pillars comprising a channel material and at least one dielectric material vertically extending through the stack structure. The method comprises removing the additional insulative structures to form cell openings, forming a first conductive material within a portion of the cell openings, and forming a fill material adjacent to the first conductive material and within the cell openings. The fill material comprises sacrificial portions. The method comprises removing the sacrificial portions of the fill material, and forming a second conductive material within the cell openings in locations previously occupied by the sacrificial portions of the fill material. Related electronic devices, memory devices, and systems are also described.

Abstract: Methods, systems, and devices for one or more acceleration engines for memory sub-system operations are described. An acceleration engine can perform one or more validation procedures on one or more codewords of a management unit. The acceleration engine can collect validation data for the management unit based on performing the validation procedures. The acceleration engine can aggregate the validation data into group validation data associated with a set of management units. The acceleration engine can transmit the group validation data to firmware of a memory sub-system or a host device.

Abstract: A method used in forming memory circuitry comprises forming transistors individually comprising one source/drain region and another source/drain region. A channel region is between the one and the another source/drain regions. A conductive gate is operatively proximate the channel region. Conductive vias are formed that are individually directly electrically coupled to the another source/drain region. Conductor material is formed that is directly coupled to the one source/drain region. The conductor material is patterned in one direction to form horizontal lines of the conductor material that have a horizontal trench between immediately-adjacent of the horizontal conductor-material lines. In a self-aligned manner, digitlines are formed that are individually in individual of the trenches between the immediately-adjacent conductor-material lines.

Abstract: Semiconductor devices with on-pitch vias, and associated systems and methods, are disclosed herein. In one embodiment, the semiconductor device may include a 3-dimensional (3D) cross-point memory array. The semiconductor device also includes access lines for the memory array, which couple with on-pitch vias connected to CMOS circuitry disposed underneath the memory array. In some embodiments, a first access line may be coupled with a first via outside a boundary of the memory array, where the first via is separated from the boundary by a first distance and has a first length longitudinal to the first access line. Further, a second access line may be coupled with a second via outside the boundary, where the second via is separated from the boundary by a second distance greater than the first distance and has a second length longitudinal to the second access line, the second length different from the first length.

Abstract: Representative apparatus, method, and system embodiments are disclosed for a self-scheduling processor which also provides additional functionality. Representative embodiments include a self-scheduling processor, comprising: a processor core adapted to execute a received instruction; and a core control circuit adapted to automatically schedule an instruction for execution by the processor core in response to a received work descriptor data packet. In another embodiment, the core control circuit is also adapted to schedule a fiber create instruction for execution by the processor core, to reserve a predetermined amount of memory space in a thread control memory to store return arguments, and to generate one or more work descriptor data packets to another processor or hybrid threading fabric circuit for execution of a corresponding plurality of execution threads. Event processing, data path management, system calls, memory requests, and other new instructions are also disclosed.

Abstract: An anisotropic conductive film (ACF) is formed with an ordered array of discrete regions that include a conductive carbon-based material. The discrete regions, which may be formed at small pitch, are embedded in at least one adhesive dielectric material. The ACF may be used to mechanically and electrically interconnect conductive elements of initially-separate semiconductor dice in semiconductor device assemblies. Methods of forming the ACF include forming a precursor structure with the conductive carbon-based material and then joining the precursor structure to a separately-formed structure that includes adhesive dielectric material to be included in the ACF. Sacrificial materials of the precursor structure may be removed and additional adhesive dielectric material formed to embed the discrete regions with the conductive carbon-based material in the adhesive dielectric material of the ACF.

Abstract: A variety of applications can include devices implementing one or more fin field-effect transistors (FinFETs) with gate oxide thickness that address thicker gate oxide quality with minimum material loss in the fins of the FinFETs for high voltage devices. The gate oxides can be fabricated with thicker oxides than gate oxides of FinFETs used with capacitors in memory cells of memory arrays. These gate oxides can be formed as oxide liners by oxidation with use of a protective liner to maintain uniform composition of material for the fin during FinFET processing.

Abstract: Methods, systems, and devices for techniques for retiring blocks of a memory system are described. In some examples, aspects of a memory system or memory device may be configured to determine an error for a block of memory cells. Upon determining the occurrence of the error, the memory system may identify one or more operating conditions associated with the block. For example, the memory system may determine a temperature of the block, a cycle count of the block, a quantity of times the block has experienced an error, a bit error rate of the block, and/or a quantity of available blocks in the associated system. Depending on whether a criteria associated with a respective operating condition is satisfied, the block may be enabled or retired.

Abstract: A processing device initializes a memory device in an unauthenticated state in which the memory device is unable to execute one or more restricted commands. The processing device accesses a security capsule that is digitally signed using a private key. The processing device transitions the memory device to an authenticated state based on verifying that the security capsule is validly signed. The processing device uses a public key corresponding to the private key to verify the security capsule is validly signed. While in the authenticated state, the memory device is able to execute the one or more restricted commands.