Abstract: Methods, systems, and devices for performance benchmark for host performance booster are described. The memory system may receive a plurality of read commands from a host system. The memory system may detect a pattern of random physical addresses as part of the plurality of read commands and increase an amount of space in a cache of the memory system based on the detected pattern. In some cases, the amount of space may be used for mapping between logical block addresses and physical addresses. The memory system may determine, for a different plurality of read commands, whether a rate of cache hits for a portion of the mapping satisfies a threshold. In some cases, the memory system may determine whether to activate a host performance booster mode based on determining whether the rate of cache hits satisfies the threshold.

Abstract: Methods, systems, and devices for transistor configurations for vertical memory arrays are described. A memory device may implement a multi-transistor architecture, such as a two-transistor architecture, that is operable to couple pillars with bit lines. For example, a memory device may include a conductive pillar that extends through levels of a memory array. The pillar may be coupled with a first bit line via a first transistor and coupled with a second bit line via a second transistor. To access a memory cell coupled with the pillar, the memory device may bias a word line coupled with the memory cell to a first access voltage, bias one of the bit lines to a second access voltage, activate one of the transistors to couple the pillar with the one of the bit lines, and deactivate the other transistor to isolate the pillar from the other of the bit lines.

Abstract: A semiconductor package having a package substrate including an upper surface, a controller, a first die stack, and a second die stack. The controller, the first die stack, and the second die stack are at the upper surface. The first die stack includes a first shingled sub-stack and a first reverse-shingled sub-stack. The first die stack also includes a first bridging chip between the first shingled and reverse-shingled sub-stacks. The second die stack similarly includes a second shingled sub-stack and a second reverse-shingled sub-stack. The second die stack also includes a second bridging chip bonded to the top of the second reverse-shingled sub-stack. At least a portion of a bottom semiconductor die of the first reverse-shingled sub-stack is vertically aligned with a semiconductor die of the second shingled sub-stack and a semiconductor die of the second reverse-shingled sub-stack.

Abstract: Implementations described herein relate to indicating a status of the memory built-in self-test for multiple memory device ranks. A memory device may read one or more bits, associated with a memory built-in self-test, that are stored in a mode register of the memory device. The memory device may identify a first data mask inversion (DMI) bit of the memory device that is associated with a first rank of the memory device and a second DMI bit of the memory device that is associated with a second rank of the memory device. The memory device may set the first DMI bit to a first value based on determining to perform the memory built-in self-test for the first rank of the memory device. The memory device may perform the memory built-in self-test for the first rank of the memory device based on setting the first DMI bit to the first value.

Abstract: A memory system may store temperature exception tracking in a temperature log, which may be separate from data to which the temperature information corresponds. A memory device may store data in a relatively higher-level cell and the corresponding temperature information in a relatively lower-level cell. To perform a write operation, the memory system may determine a current temperature at which the data is being written or was written to a partition of a memory device and may indicate in the temperature log if the current temperature is entering a temperature range that is outside a threshold temperature (e.g., a nominal temperature). To perform a read operation, the memory system may determine if the data to read was written to the memory device outside the threshold temperature to determine whether to perform temperature compensation for the read operation.

Abstract: The present disclosure includes apparatuses, methods, and systems for pre-decoder circuitry. An embodiment includes a memory array including a plurality of memory cells, decoder circuitry coupled to the memory array, wherein the decoder circuitry comprises a p-type transistor having a first gate, a first n-type transistor having a second gate, and a second n-type transistor having a third gate, and pre-decoder circuitry configured to provide a bias condition for the first gate, the second gate, and the third gate to provide a selection signal to one of the plurality of memory cells, wherein the bias condition comprises zero volts for the first gate, the second gate, and the third gate for a positive configuration for the memory cells and a negative voltage for the third gate and zero volts for the first gate and the second gate for a negative configuration for the memory cells.

Abstract: Methods, systems, and devices for a memory system host data reset function are described. A reset operation may be performed to reset data in a memory system without erasing host data from the memory system. The memory system and a host system may perform the reset operation to sequentially reorder the data across pages and blocks of the memory system, mitigating holes in the data. The reset operation may enable sequentially reordering the data by performing refresh operations on the blocks and performing a subsequent garbage collection operation to consolidate the data within the pages of the refreshed blocks. The host system may reorganize the logical block addresses associated with the blocks and the memory system may perform the refresh operations and the garbage collection operations. The blocks may be refreshed according to an order of access frequency and according to a measure of performance impact on the memory system.

Abstract: Some embodiments include an integrated assembly with a semiconductor channel material having a boundary region where a more-heavily-doped region interfaces with a less-heavily-doped region. The more-heavily-doped region and the less-heavily-doped region have the same majority carriers. The integrated assembly includes a gating structure adjacent the semiconductor channel material and having a gating region and an interconnecting region of a common and continuous material. The gating region has a length extending along a segment of the more-heavily-doped region, a segment of the less-heavily-doped region, and the boundary region. The interconnecting region extends laterally outward from the gating region on a side opposite the semiconductor channel region, and is narrower than the length of the gating region. Some embodiments include methods of forming integrated assemblies.

Abstract: Methods, systems, and devices for improved implicit ordered command handling are described. For instance, a memory device may receive, from a host device, a first command and a second command. The memory device may determine whether a first memory operation associated with the first command and a second memory operation associated with the second command are to be performed in an order relative to each other based on a first time when the first command is received relative to a second time when the second command is received. The memory device may select whether to perform a first memory access procedure or a second memory access procedure based on whether the first memory operation and the second memory operation are a same type of memory operation and on whether the first memory operation and the second memory operation are to be performed in the order relative to each other.

Abstract: Methods, systems, and devices for techniques for improving host write performance during data transferring (e.g., folding) are described. A memory system may determine to transfer first data from one or more source data blocks of the memory system to one or more destination data blocks, where the source data blocks and the destination data blocks are associated with one or more memory dies of a set of memory dies of the memory system. The memory system may also receive, from a host system, a command to write second data to a first memory die of the one or more memory dies, and write, concurrent with transferring the first data, the second data to a second memory die of the set of memory dies different than the one or more memory dies based on the transfer of the first data being associated with the first memory die.

Abstract: Disclosed in some examples, are methods, systems, programmable atomic units, and machine-readable mediums that provide an exception as a response to the calling processor. That is, the programmable atomic unit will send a response to the calling processor. The calling processor will recognize that the exception has been raised and will handle the exception. Because the calling processor knows which process triggered the exception, the calling processor (e.g., the Operating System) can take appropriate action, such as terminating the calling process. The calling processor may be a same processor as that executing the programmable atomic transaction, or a different processor (e.g., on a different chiplet).

Abstract: A memory module includes one or more memory devices and a module logic chip. The module is coupled to a host which operates the memory devices. Certain features of the module may only be accessible once the module has authenticated with the host. For example, the module logic chip may perform asymmetric authentication with the host and the feature may be enabled only after successful authentication. In some embodiments, the module logic may additionally authenticate the memory devices. For example, the module logic chip may perform symmetric authentication on the memory devices after authentication with the host.

Abstract: Memory controller commands to be sent to a memory device may be prioritized based one or more factors. For instance, a memory controller may employ a first-ready, first-come, first-served (FRFCFS) policy in which certain types of commands (e.g., read) are prioritized over other types of commands (e.g., write). The policy may be modified so when deciding which bank to open, the bank with the oldest read command is opened. While continuing to issue commands per this modified FRFCFS policy, the controller may keep track of banks whose pages are ready to receive their respective read commands. Once a number of ready banks meets or exceeds a threshold, issuance of write commands are paused and read commands for the ready banks are issued.

Abstract: A method of transmitting a data packet from a first virtualized server to a second virtualized server includes copying, by the first virtualized server, the data packet into a send queue associated with the first virtualized server, where the send queue is located at a fabric attached memory, where the fabric attached memory is accessible by the first virtualized server and the second virtualized server. The method further includes retrieving, by one or more processors associated with the fabric attached memory, the data packet from the send queue and forwarding, by the one or more processors, the data packet to a receive queue associated with the second virtualized server, where the receive queue is located at the fabric attached memory. The method further includes retrieving, by the second virtualized server, the data packet from the receive queue.

Abstract: Disclosed herein is an apparatus that includes first and second shift register circuits coupled in series, the first and second shift register circuits being configured to perform a shift operation of a trigger signal in synchronization with a clock signal, and a clock control circuit configured to set a frequency of the clock signal to a first frequency when the trigger signal is in the first shift register circuit and set a frequency of the clock signal to a second frequency different from the first frequency when the trigger signal is in the second shift register circuit.

Abstract: A semiconductor device assembly is provided. The assembly includes a substrate having an upper surface on which is disposed a first device contact, a keep-out region extending from a first side surface of the substrate to a second side surface of the substrate opposite the first, and at least one trace coupled to the first device contact and extending across the keep out region towards a third side surface of the substrate. The assembly further includes at least one semiconductor device disposed over the upper surface of the substrate and coupled to the first device contact. The keep-out region of the substrate is free from conductive structures other than the at least one trace.

Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for dynamic column select swapping. A memory may have a number of sets of bit lines organized into column planes. If a set of bit lines associated with a first address in a first column plane is defective, it may be repaired by reassigning the first address to a redundant set of bit lines in a global column redundant (GCR) column plane. If a set of bit lines associated with the first address in a second column plane is also defective, then swap logic of the memory may swap the first address to a second address and assign it to the set of bitlines in the second column plane. The second address may then also be repaired by being reassigned to the GCR column plane.

Abstract: A first host data item and a second host data item are received. The first host data item is stored in a first page of a first logical unit of a memory device, where the first page is one of a plurality of pages associated with redundancy metadata. A second page a second page of a second logical unit of the memory device is identified, where the second page is one of the plurality of pages associated with the redundancy metadata, and the first page and the second page are associated with different wordlines of the memory device. The second host data item is stored in the second page of the second logical unit of the memory device. The first page and the second page can be associated with a fault tolerant stripe that includes the redundancy metadata.

Abstract: Methods, systems, and devices for techniques for enhanced read performance on blocks of memory cells are described. The method may involve selecting a first block of memory cells from a set of blocks of memory cells of a memory system based on a condition of the first block of memory cells being met and setting one or more programming parameters corresponding to the first block of memory cells such that the one or more programming parameters are within a threshold value of one or more programming parameters corresponding to a second block associated with a storage density different from a storage density of the first block of memory cells. Further, the method may involve performing an operation on the block of memory cells according to the one or more programming parameters.

Abstract: A system receives, via a graphical user interface (GUI), a user selection of one or more parameters indicative of a request to segment the memory device into partitions for use by a host system. Responsive to receiving, via the GUI, the user selection of the one or more parameters indicative of the request to segment the memory device into the partitions, the system configures a first partition of the partitions with one or more configuration settings based on the one or more parameters. To configure the first partition, the system determines a memory type from multiple memory types based on the one or more parameters, and configures the first partition of the partitions to operate as the determined memory type.