Abstract: Embodiments of the present invention relate to implanting arsenic into a wafer to quickly detect if there is metal contamination, such as iron, aluminum, or manganese, on the wafer. In accordance with an aspect of the present invention, a method for detecting metal contamination of a silicon chip comprises implanting arsenic ions into the silicon chip, and etching the silicon chip with a chemical etching solution. The existence of any metal contamination is detected by observing occurrence of silicon pits on the silicon chip caused by reaction between the arsenic ions and the metal contamination and etching with the chemical etching solution.

Abstract: The present invention relates to an auxiliary tool for assembling a scrubber which includes a motor, a shaft rotatably coupled to and extending through the motor, a shaft pin detachably connected to the shaft, and a disk coupled to the shaft and having a notch located relative to the shaft pin at a predetermined angle with respect to a longitudinal axis of the shaft when properly assembled. In specific embodiments, the auxiliary tool comprises a tool body configured to at least partially receive the motor, the shaft pin, the disk, and the notch of the disk. The tool body includes a first recess configured to at least partially receive the shaft pin and a protrusion configured to be at least partially received into the notch of the disk. The first recess and the protrusion are arranged at the predetermined angle to position the notch of the disk and the shaft pin of the scrubber for proper assembly at the predetermined angle with respect to the longitudinal axis of the shaft.

Abstract: Embodiment of the present invention are directed to improving the reclamation rate of the waste water of wet benches in semiconductor fabrication. The invention does so by ascertaining the best reclamation switch time before a given rinse recipe runs. In accordance with an aspect of the invention, a method for improvement of water reclamation rate comprises choosing a rinse recipe for a wet bench. The wet bench is activated, and waste water quality of waste water produced for the rinse recipe from the wet bench is detected to generate water quality data for a plurality of reclamation switch time levels. The waste water is directed to a water reclamation system during a reclamation time period after each of the plurality of reclamation switch time levels. The water quality data of the waste water is analyzed for the plurality of reclamation switch time levels.

Abstract: The present invention provides a method and a set of trimming accessories for trimming rubber plate used in an ion implanter. The rubber plate is suitable for use in an ion implanter, wherein the ion implanter has a platform with multiple primary holes and multiple primary notches. In specific embodiments, the set of trimming accessories includes trimming equipment such as a knife or preferably a laser; a template with secondary holes corresponding to primary holes and secondary notches corresponding to primary notches. The template is used as a guide to form a plurality of tertiary holes in the rubber plate corresponding to the plurality of secondary holes of the template and to form a plurality of tertiary notches in the rubber plate corresponding to the plurality of secondary notches of the template.

Abstract: A read data latch circuit that provides a level shift between internal and external voltages that does not require added circuitry dedicated to equalizing or level shifting the data latch nodes. Data lines are provided having a higher capacitance than the capacitance of the data latch nodes. The data latch nodes are connected to the data lines through a switch. When the switch is open, an equalization charge is shared between the data lines and the latch nodes. The voltage for providing the equalization charge and data signals internal to the chip is lower than the data output signals provided to external circuitry by the data latch.

Abstract: A shutter rotation device is provided. The shutter rotation device is adapted for use with an electric beam evaporator, and it comprises a rotation mechanism and a fixed member. The fixed member connects a frame of the electric beam evaporator to the rotation mechanism. By means of adding the fixed member, the shutter of the shutter rotation device can be prevented from shifting. Therefore, the position of a vacuum seal on the shutter rotation device can be maintained, and the vacuum maintains its integrity.

Abstract: An improved method for reducing the cost of fabricating bottle-shaped deep trench capacitors.

Abstract: A dual-gate cell structure with self-aligned gates. A polysilicon spacer forms a second gate (213) separated from a first gate (201), which is also polysilicon, by a dielectric layer (207). A drain region (219) and a source region (221) are formed next to the gates within a shallower well. The shallower well is positioned above a deep well region. In one embodiment, the second gate (213) acts as a floating gate in a flash cell. The floating gate may be programmed and erased by the application of appropriate voltage levels to the first gate (201), source (221), and/or drain (219). The self-aligned nature of the second gate (213) to the first gate (201) allows a very small dual-gate cell to be formed.

Abstract: According to the present invention, an apparatus for determining various processes of wafer fabrication suitable for a plurality of various processes of wafer fabrication, comprising: a plurality of wafer cassettes, each having a distinct transparency, used in the various processes of wafer fabrication; a sensor-set, used to detect the distinct transparency of each of the wafer cassettes, and output a reflection intensity corresponding to the distinct transparency; and an amplifier, connected to the sensor-set to receive the reflection intensity, thus reading the distinct transparency, so as to determine the type of one of the wafer cassettes.

Abstract: An assembly station for a sputter shield assembly provides a work bench for assembling and disassembling the sputter shield assembly. The shield assembly has a clamp shield facing downwards to hold the shield assembly which is turned over by 180 degrees, and includes at least three bottom rim support arms for supporting the clamp shield and bearing the weight of the shield assembly, and at least three inner rim retaining arms for contacting the inner rim formed by the shield and the clamp shield. The invention provides a changed support means for holding the shield assembly on the assembly station so that one person is enough to do the assembly and disassembly of the shield assembly, and thus save manpower and operation time.

Abstract: A method for protecting a specific region in the sample applied in preparing an ultra-thin specimen is disclosed. The method includes the steps of (a) forming a first concavity on a first side of the specific region by a focus ion beam (FIB) technique, (b) forming a second concavity on a second side of the specific region opposite to the first side by the focus ion beam technique, (c) filling the first concavity and the second concavity with a first metallic packing and a second metallic packing respectively, and (d) forming a third metallic packing on the specific region and extending to connecting with the first metallic packing and the second metallic packing to define a protecting device for protecting the specific region.

Abstract: A method to etch passivation layers and an antireflective layer on a substrate, comprising: forming a metal layer on the substrate; forming the antireflective layer on the metal layer; forming the passivation layers on the antireflective layer, wherein the passivation layer consisting of a silicon oxide layer on the antireflective layer and a silicon nitride layer on the silicon oxide layer; etching the silicon nitride layer in a first etching chamber, wherein the silicon nitride layer is etched in a uniformity of less than 10% in the first etching chamber; etching the silicon oxide layer in a second etching chamber, wherein the silicon oxide layer is etching in a uniformity of less than 5% in the second etching chamber; etching the antireflective layer in the second etching chamber to expose a surface of the metal layer for metal contacts of integrated circuits.

Abstract: The present invention discloses a method for forming a self-aligned contact. In the present invention, a amorphous SiC layer or a HexaChloroDisilane-SiN (HCD-SiN) layer is formed on the surface of a transistor as an etching stopper layer. After removing part of the etching stopper layer, a gate protection film is formed on the surface of the gate electrode of a transistor. Due to the high etching selectivity of the gate protection film to the dielectric layer, the gate protection film effectively prevents the gate electrode of a transistor from being etched in the contact-etching process. In addition, the gate protection film has a low dielectric constant thereby reducing the parasitic capacitance of a bit line formed by the self-aligned contact forming method according to the present invention.

Abstract: A method for manufacturing a capacitor includes the steps of a) forming a sacrificial layer over the etching stop layer, b) partially removing the sacrificial layer, the etching stop layer, and the dielectric layer to form a contact window, c) forming a first conducting layer over the sacrificial layer and in the contact window, d) partially removing the first conducting layer and the sacrificial layer to expose a portion of the sacrificial layer and retain a portion of the first conducting layer, e) forming a second conducting layer over tops and sidewalls of the portion of the first conducting layer and the portion of the sacrificial layer, f) forming an intermediate layer on the second conducting layer, and g) removing the intermediate layer and partially removing the second conducting layer while retaining a portion of the second conducting layer with a rough top surface alongside the portion of the first conducting layer and the portion of the sacrificial layer, and removing the portion of the sacrificia

Abstract: Disclosed is an improved tetraethylorthosilicate (TEOS) deposition apparatus for semiconductor manufacture processes, in which the apparatus comprises a furnace chamber for performing TEOS deposition and an exhaust pipe line connected with the furnace chamber for discharging a gas from the furnace chamber, and the exhaust pipe line is connected with a main valve, an automatic pressure control (APC) valve and a pump in sequence. The improvement is characterized in that the exhaust pipe line further connects a disc trap between the main valve and APC valve for filtering the gas in the exhaust pipe line. With the insertion of the disc trap in the exhaust pipe line to collect and filter TEOS deposition from the gas in the exhaust pipe line, failure and wearing of the APC valve caused by TEOS due to temperature variations are prevented, thereby increasing the lifetime of the APC valve and reducing the failure possibility.

Abstract: The present invention provides a method for controlling dopant density of a plug-shaped doped polysilicon layer formed within a plug-shaped recess to prevent the dopant contained in the plug-shaped doped polysilicon layer from diffusing into a conductive layer under the plug-shaped recess through a bottom side of the plug-shaped recess, the plug-shaped recess being formed within a dielectric layer which is positioned above the conductive layer, the method comprising: (1) forming an undoped silicon layer on the surface of the plug-shaped recess; (2) forming a doped polysilicon layer on top of the undoped silicon layer to fill the plug-shaped recess; and (3) performing a thermal treatment to the semiconductor wafer so as to make the doped poly-silicon layer interact with the undoped silicon layer inside the plug-shaped recess which forms a completely doped polysilicon layer within the plug-shaped recess.

Abstract: A heating lamp bracket for reaction chambers of evaporation coating machines uses paired and insulation means to mount a plurality of heating lamps to a chamber wall of a reaction chamber. The bracket includes a mounting frame that has an insulation outer surface and a mounting outer face opposing to the insulation outer surface. The insulation outer surface has at least one insulation member located thereon for fastening the mounting frame to the chamber wall. The mounting outer surface has at least two independent mounting spots for connecting respectively a connection end of the corresponding heating lamp. The independent mounting spots and non-encased type insulation members of the present invention can effectively resolve the problems of difficult replacement of the heating lamps and defective insulation that happens to the conventional heating lamp brackets.

Abstract: A split gate EPROM cell and a method that includes a gate structure having a sidewall spacer of differential composition disposed about a floating gate which facilitates control of the spacer thickness during fabrication. Controlling the thickness of the spacer allows avoiding a reduction of the distance between the floating gate and the control gate as well as leakage of the charge from the floating gate.

Abstract: A system and method for supporting sequential burst counts of particular utility with respect to double data rate (“DDR”) synchronous dynamic random access memory (“SDRAM”) devices wherein each memory bank is divided into halves, corresponding to Even (AOc=0) and Odd (AOc=1) portions. Separate address busses may be provided for those bits necessary to accommodate the maximum burst length. As the column addresses are loaded, the buffers associated with the Even bus check to determine if the pad address “Y” or “Y+1” should be loaded. Loading “Y+1” is necessary to support sequential counting if the start address is Odd (AOc=1). “Y” selects in the Odd and Even banks are then selected and incremented, concurrently. Nevertheless, the Even field is always “Y+1”, that is, YEven=YOdd+1.

Abstract: A structure of supporting frame for heater lamp in evaporator is disclosed. The supporting frame contains a lower supporting frame and an upper supporting female, respectively, by means of a non-circle section on the male portion and a complementary section on the female portion to conjoin together and to restrain them to rotate. Consequently, the proposed supporting frame provides directly locating during the female joint step of male portion and female portion. The time consuming steps for e-beam evaporator maintain are thus omitted.